Patent application number | Description | Published |
20100304047 | Low Temperature Deposition of Silicon-Containing Films - This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition. | 12-02-2010 |
20110065280 | MASK PATTERN FORMING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - The method includes a film-forming process which forms a carbon film, to isotropically coat a surface of a silicon film pattern in which a first line portion formed of a silicon film that is formed on a target etching film on a substrate is arranged, an etchback process which etches back the carbon film such that the carbon film is removed from an upper portion of the first line portion and remains as a side wall portion of the first line portion, and a silicon film removing process which forms a mask pattern in which the side wall portion is arranged, by removing the first line portion. | 03-17-2011 |
20110263105 | AMORPHOUS SILICON FILM FORMATION METHOD AND AMORPHOUS SILICON FILM FORMATION APPARATUS - The amorphous silicon film formation method includes forming a seed layer on the surface of a base by heating the base and flowing aminosilane-based gas onto the heated base; and forming an amorphous silicon film on the seed layer by heating the base, supplying silane-based gas containing no amino group onto the seed layer on the surface of the heated base, and thermally decomposing the silane-based gas containing no amino group. | 10-27-2011 |
20110269315 | THIN FILM FORMATION METHOD AND FILM FORMATION APPARATUS - A thin film formation method to form a silicon film containing an impurity on a surface of an object to be processed in a process chamber that allows vacuum exhaust includes alternately and repeatedly performing a first gas supply process in which a silane-based gas composed of silicon and hydrogen is supplied into the process chamber in a state that the silane-based gas is adsorbed onto the surface of the object to be processed and a second gas supply process in which an impurity-containing gas is supplied into the process chamber, to form an amorphous silicon film containing an impurity. Accordingly, an amorphous silicon film containing an impurity having good filling characteristics can be formed even at a relatively low temperature. | 11-03-2011 |
20110287629 | SILICON FILM FORMATION METHOD AND SILICON FILM FORMATION APPARATUS - A silicon film formation method includes a first film formation operation, an etching operation, and a second film formation operation. In the first film formation operation, a first silicon film is formed to fill the groove of the object to be processed. In the etching operation, an opening of the groove is widened by etching the first silicon film formed in the first film formation operation. In the second film formation operation, a second silicon film is formed on the groove having the opening widened in the etching operation to fill the groove. Accordingly, a silicon film is formed on a groove of an object to be processed having the groove provided thereon. | 11-24-2011 |
20110312192 | FILM FORMATION METHOD AND FILM FORMATION APPARATUS - A film formation method of forming a silicon oxide film on a surface of an object to be processed in a process chamber includes absorbing a seed gas comprising a silane-based gas on the surface of the object to be processed by supplying the seed gas into the process chamber, forming a silicon film having an impurity by supplying a silicon-containing gas as a material gas, and an addition gas including the impurity into the process chamber, and oxidizing the silicon film to convert the silicon film into the silicon oxide film. Accordingly, the silicon oxide film having the high density and the high stress is formed on the surface of the object to be processed. | 12-22-2011 |
20120028437 | TRENCH-FILLING METHOD AND FILM-FORMING SYSTEM - A method of filling a trench comprises heating a semiconductor substrate having a trench formed therein and an oxide film formed at least on the sidewall of the trench and supplying an aminosilane gas to the surface of the substrate so as to form a seed layer on the semiconductor substrate, heating the semiconductor substrate having the seed layer formed thereon and supplying a monosilane gas to the surface of the seed layer so as to form a silicon film on the seed layer, filling the trench of the semiconductor substrate, which has the silicon film formed thereon, with a filling material that shrinks by burning, and burning the semiconductor substrate coated by the filling material filling the trench in an atmosphere containing water and/or a hydroxy group while changing the filling material into a silicon oxide and changing the silicon film and the seed layer into a silicon oxide. | 02-02-2012 |
20120103256 | VERTICAL HEAT TREATMENT APPARATUS - Provided is a vertical heat treatment apparatus which performs a film-forming process for substrates by supplying a film-forming gas to a plurality of substrates loaded onto a substrate supporter. The substrate supporter is rotated around an inclination axis, and the apparatus includes: a plurality of main holders which are provided at every reception position of the substrates in the substrate supporter and respectively supports the peripheries of the substrates at positions separated from each other in the circumferential direction; and first and second auxiliary holders which are located to be separated from the main holders in the circumferential direction and whose tops are lower than those of the main holders. Each substrate alternates between a position supported by the first auxiliary holder and the main holders and a position supported by the second auxiliary holder and the main holders every rotation of the substrate supporter. | 05-03-2012 |
20120103518 | FILM FORMATION APPARATUS - A film formation apparatus includes a gas supply mechanism for supplying an aminosilane-based gas, and a silane-based gas that does not include an amino group. Processes of forming a seed layer on a surface of the insulation film having the opening reaching the conductive substance and on a bottom surface of the opening by supplying the aminosilane-based gas into the process chamber, and forming a silicon film on the seed layer by supplying the silane-based gas that does not include the amino group into the process chamber, are sequentially performed in the process chamber. | 05-03-2012 |
20120178264 | METHOD AND APPARATUS FOR FORMING SILICON NITRIDE FILM - A method of forming a silicon nitride film on the surface of an object to be processed, the method including forming a seed layer functioning as a seed of the silicon nitride film on the surface of the object to be processed by using at least an aminosilane-based gas, prior to forming the silicon nitride film on the surface of the object to be processed. | 07-12-2012 |
20130005142 | METHOD AND APPARATUS FOR FORMING SILICON FILM - Provided is a method and apparatus for forming a silicon film, which are capable of suppressing generation of a void or seam. The method includes performing a first film-forming process, performing an etching process, performing a doping process, and performing a second film-forming process. In the first film-forming process, a non-doped silicon film that is not doped with an impurity is formed so as to embed a groove of an object. In the etching process, the non-doped silicon film formed via the first film-forming process is etched. In the doping process, the non-doped silicon film etched via the etching process is doped with an impurity. In the second film-forming process, an impurity-doped silicon film is formed so as to embed the silicon film doped via the doping process. | 01-03-2013 |
20130109155 | METHOD OF FORMING SEED LAYER AND METHOD OF FORMING SILICON-CONTAINING THIN FILM | 05-02-2013 |
20130109197 | METHOD OF FORMING SILICON OXIDE FILM | 05-02-2013 |
20130189853 | Low Temperature Deposition of Silicon-Containing Films - This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition. | 07-25-2013 |
20130230975 | METHOD OF FORMING A GERMANIUM THIN FILM - A method of forming a germanium thin film on an underlying film includes forming a germanium seed layer by absorbing a germanium on a surface of the underlying film using an aminogermane-based gas, and forming a germanium thin film on the germanium seed layer using a germane-based gas. | 09-05-2013 |
20130292700 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes forming a gate insulating film, in which at least one film selected from the group of a SiO | 11-07-2013 |
20140206180 | THIN FILM FORMATION METHOD - A thin film formation method to form an amorphous silicon film containing an impurity on a surface of an object to be processed in a process chamber that allows vacuum exhaust includes supplying a silane-based gas composed of silicon and hydrogen into the process chamber in a state that the silane-based gas is adsorbed onto the surface of the object without supplying an impurity-containing gas, supplying the impurity-containing gas into the process chamber to form the amorphous silicon film containing the impurity without supplying the silane-based gas, and performing the supplying of the silane-based gas and the supplying of the impurity-containing gas alternately and repeatedly such that the impurity reacts with the silane-based gas. | 07-24-2014 |
20140283750 | BATCH-TYPE VERTICAL SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE HOLDER - A batch-type vertical substrate processing apparatus includes a processing chamber into which a substrate holder configured to stack and hold a plurality of target substrates in a height direction is inserted; and a plurality of flanges formed to protrude from an inner wall of the processing chamber toward an internal space of the processing chamber along a planar direction and configured to divide the interior of the processing chamber into a plurality of processing subspaces along the height direction, wherein the flanges include insertion holes through which the substrate holder is inserted, and diameters of the insertion holes are small at an upper side of the processing chamber and become gradually larger toward a lower side of the processing chamber. | 09-25-2014 |
20140284808 | STACKED SEMICONDUCTOR DEVICE, AND METHOD AND APPARATUS OF MANUFACTURING THE SAME - Provided is a method of manufacturing a stacked semiconductor device, which includes forming a stacked film on a semiconductor substrate, the stacked film including a plurality of silicon oxide films and a plurality of silicon nitride films, which are alternately arranged on top of each other, and the stacked film being obtained by repeatedly performing a series of operations of forming the silicon oxide film on the semiconductor substrate using one of triethoxysilane, octamethylcyclotetrasiloxane, hexamethyldisilazane and diethylsilane gases, and forming the silicon nitride film on the formed silicon oxide film; etching the silicon nitride films in the stacked film; removing carbons contained in the silicon oxide films, which are not removed in the etching, to reduce a concentration of the carbons; and forming electrodes in regions where the silicon nitride films are etched in the etching. | 09-25-2014 |
20140331928 | METHOD OF FORMING A GERMANIUM THIN FILM - A method of forming a germanium thin film on an underlying film includes forming a germanium seed layer by absorbing a germanium on a surface of the underlying film using an aminogermane-based gas, and forming a germanium thin film on the germanium seed layer using a germane-based gas. | 11-13-2014 |
20140367699 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE - The method for fabricating a semiconductor device is to fabricate a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes a step of forming a gate insulating film. In the step, at least one film selected from the group consisting of a SiO | 12-18-2014 |
20150037970 | Silicon Film Forming Method, Thin Film Forming Method and Cross-Sectional Shape Control Method - The present disclosure provides a silicon film forming method for forming a silicon film on a workpiece having a processed surface, including: forming a seed layer by supplying a high-order aminosilane-based gas containing two or more silicon atoms in a molecular formula onto the processed surface and by having silicon adsorbed onto the processed surface; and forming a silicon film by supplying a silane-based gas not containing an amino group onto the seed layer and by depositing silicon onto the seed layer, wherein, when forming a seed layer, a process temperature is set within a range of 350 degrees C. or lower and a room temperature or higher. | 02-05-2015 |
Patent application number | Description | Published |
20080299728 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device manufacturing method includes: forming a sidewall spacer on a sidewall surface of a gate electrode; forming a pair of second conductive type source and drain regions in an active region; covering top surfaces of a semiconductor layer, a device isolation region, the sidewall spacer and the gate electrode with a metal film; reducing resistance of the source and drain regions and the gate electrode partially by making the metal film react with the semiconductor layer and the gate electrode; and removing an unreacted portion of the metal film and the sidewall spacer simultaneously by using an etchant which readily etches the unreacted portion of the metal film and the sidewall spacer while hardly etching the device isolation region, resistance-reduced portions of the gate electrode and resistance-reduced portions of the source and drain regions. | 12-04-2008 |
20090181550 | Film formation method and apparatus for semiconductor process - A film formation process is performed to form a silicon nitride film on a target substrate within a process field configured to be selectively supplied with a first process gas containing a silane family gas and a second process gas containing a nitriding gas. The method is preset to compose the film formation process of a main stage with an auxiliary stage set at one or both of beginning and ending of the film formation process. The main stage includes an excitation period of supplying the second process gas to the process field while exciting the second process gas by an exciting mechanism. The auxiliary stage includes no excitation period of supplying the second process gas to the process field while exciting the second process gas by the exciting mechanism. | 07-16-2009 |
20090191722 | Film formation method and apparatus for semiconductor process - A film formation method is used for forming a silicon nitride film on a target substrate by repeating a plasma cycle and a non-plasma cycle a plurality of times, in a process field configured to be selectively supplied with a first process gas containing a silane family gas and a second process gas containing a nitriding gas and communicating with an exciting mechanism for exciting the second process gas to be supplied. The method includes obtaining a relation formula or relation table that represents relationship of a cycle mixture manner of the plasma cycle and the non-plasma cycle relative to a film quality factor of the silicon nitride film; determining a specific manner of the cycle mixture manner based on a target value of the film quality factor with reference to the relation formula or relation table; and arranging the film formation process in accordance with the specific manner. | 07-30-2009 |
20100112496 | PATTERNING METHOD - A patterning method comprises a step for forming a first film on a substrate, a step for forming a multilayer film including a resist film on the first film, a step for patterning the resist film by photolithography to form a patterned resist film having a predetermined pattern, a step for forming an silicon oxide film different from the first film on the patterned resist film and the first film by supplying a first gas containing an organic silicon and a second gas containing an activated oxygen species alternately to the substrate, a step for etching the silicon oxide film to form a sidewall spacer on the sidewall of the patterned resist film, a step for removing the patterned resist film, and a step for processing the first film by using the sidewall spacer as a mask. | 05-06-2010 |
20100112796 | PATTERNING METHOD - Disclosed is a patterning method including: forming, on a thin film, a sacrificial film made of a material different from that of the thin film and made of SiBN; processing the sacrificial film into a pattern having a preset interval by using a photolithography technique; forming, on sidewalls of the processed sacrificial film, sidewall spacers made of a material different from those of the sacrificial film and the thin film; removing the processed sacrificial film; and processing the thin film by using the sidewall spacers as a mask. | 05-06-2010 |
20100130015 | PATTERNING METHOD - Disclosed is a patterning method including: forming a first film on a substrate; forming a first resist film on the first film; processing the first resist film into a first resist pattern having a preset pitch by photolithography; forming a silicon oxide film on the first resist pattern and the first film by alternately supplying a first gas containing organic silicon and a second gas containing an activated oxygen species to the substrate; forming a second resist film on the silicon oxide film; processing the second resist film into a second resist pattern having a preset pitch by the photolithography; and processing the first film by using the first resist pattern and the second resist pattern as a mask. | 05-27-2010 |
20110237082 | MICRO PATTERN FORMING METHOD - There is provided a micro pattern forming method including forming a thin film on a substrate; forming a film serving as a mask when processing the thin film; processing the film serving as a mask into a pattern including lines having a preset pitch; trimming the pattern including the lines; and forming an oxide film on the pattern including the lines and on the thin film by alternately supplying a source gas and an activated oxygen species. Here, the process of trimming the pattern and the process of forming an oxide film are consecutively performed in a film forming apparatus configured to form the oxide film. | 09-29-2011 |
20120267340 | FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS - A disclosed film deposition method includes steps of loading plural substrates each of which includes a pattern including a concave part in a reaction chamber in the form of shelves; depositing a silicon oxide film on the plural substrates by supplying a silicon-containing gas and an oxygen-containing gas to the reaction chamber; etching the silicon oxide film deposited on the plural substrates in the step of depositing by supplying a fluorine-containing gas and an ammonia gas to the reaction chamber; and alternately repeating the step of depositing and the step of etching. | 10-25-2012 |
20130213301 | MASK PATTERN FORMING METHOD, FINE PATTERN FORMING METHOD, AND FILM DEPOSITION APPARATUS - In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus. | 08-22-2013 |
20140020626 | FILM CRACK DETECTING APPARATUS AND FILM FORMING APPARATUS - Provided is a film crack detecting apparatus capable of recognizing a possibility of occurrence of particles in real time by detecting film cracks of an unnecessary film adhered to a probe unit provided in a processing container. The film crack detecting apparatus is provided in a film forming apparatus, which includes a processing container configured to accommodate an object to be processed and forms a thin film on a surface of the object, to perform a film crack detection operation. The film crack detecting apparatus includes a probe unit installed within the processing container, an elastic wave detecting unit attached to an end of the probe unit to detect an elastic wave, and a determination unit configured to determine whether the maintenance of the processing container is necessary based on a detection result of the elastic wave detecting unit. | 01-23-2014 |