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Kayes

Brendan Kayes, Santa Clara, CA US

Patent application numberDescriptionPublished
20110083722TEXTURED METALLIC BACK REFLECTOR - Embodiments of the invention generally relate to device fabrication of thin films used as solar devices or other electronic devices, and include textured back reflectors utilized in solar applications. In one embodiment, a method for forming a textured metallic back reflector which includes depositing a metallic layer on a gallium arsenide material within a thin film stack, forming an array of metallic islands from the metallic layer during an annealing process, removing or etching material from the gallium arsenide material to form apertures between the metallic islands, and depositing a metallic reflector layer to fill the apertures and cover the metallic islands. In another embodiment, a textured metallic back reflector includes an array of metallic islands disposed on a gallium arsenide material, a plurality of apertures disposed between the metallic islands and extending into the gallium arsenide material, a metallic reflector layer disposed over the metallic islands, and a plurality of reflector protrusions formed between the metallic islands and extending from the metallic reflector layer and into the apertures formed in the gallium arsenide material.04-14-2011

Brendan M. Kayes, Los Angeles, CA US

Patent application numberDescriptionPublished
20090020150STRUCTURES OF ORDERED ARRAYS OF SEMICONDUCTORS - A device having arrays of semiconductor structures with dimensions, ordering and orientations to provide for light absorption and charge carrier separation. The semiconductor structures are formed with relatively high aspect ratios, that is, the structures are long in the direction of received light, but have relatively small radii to facilitate efficient radial collection of carriers.01-22-2009
20090020853STRUCTURES OF AND METHODS FOR FORMING VERTICALLY ALIGNED Si WIRE ARRAYS - A structure consisting of vertically aligned wire arrays on a Si substrate and a method for producing such wire arrays. The wire arrays are fabricated and positioned on a substrate with an orientation and density particularly adapted for conversion of received light to energy. A patterned oxide layer is used to provide for wire arrays that exhibit narrow diameter and length distribution and provide for controlled wire position.01-22-2009

Brendan M. Kayes, San Francisco, CA US

Patent application numberDescriptionPublished
20120103406METALLIC CONTACTS FOR PHOTOVOLTAIC DEVICES AND LOW TEMPERATURE FABRICATION PROCESSES THEREOF - Embodiments of the invention generally relate to photovoltaic devices and more specifically, to the metallic contacts disposed on photovoltaic devices, such as photovoltaic cells, and to the fabrication processes for forming such metallic contacts. The metallic contacts contain a palladium germanium alloy formed at low temperatures during an anneal process. In some embodiments, the photovoltaic cell may be heated to a temperature within a range from about 20° C. to about 275° C. during the anneal process, for example, at about 150° C. for about 30 minutes. In other embodiments, the photovoltaic cell may be heated to a temperature within a range from about 150° C. to about 275° C. for a time period of at least about 0.5 minutes during the anneal process.05-03-2012
20120104460OPTOELECTRONIC DEVICES INCLUDING HETEROJUNCTION - Embodiments of the invention generally relate to optoelectronic semiconductor devices such as photovoltaic devices including solar cells. In one aspect, an optoelectronic semiconductor device includes an absorber layer made of gallium arsenide (GaAs) and having only one type of doping. An emitter layer is located closer than the absorber layer to a back side of the device, the emitter layer made of a different material than the absorber layer and having a higher bandgap than the absorber layer. A heterojunction formed between the emitter layer and the absorber layer, and a p-n junction is formed between the emitter layer and the absorber layer and at least partially within the different material at a location offset from the heterojunction. The p-n junction causes a voltage to be generated in the device in response to the device being exposed to light at a front side of the device.05-03-2012
20120199184SELF-BYPASS DIODE FUNCTION FOR GALLIUM ARSENIDE PHOTOVOLTAIC DEVICES - Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect.08-09-2012
20120199188METAL CONTACT FORMATION AND WINDOW ETCH STOP FOR PHOTOVOLTAIC DEVICES - Embodiments of the invention generally relate to photovoltaic devices and more specifically, to metallic contacts disposed on photovoltaic devices and to the fabrication processes for forming such metallic contacts. In one aspect, a method for contact patterning on a photovoltaic device includes providing a semiconductor structure that includes a front contact layer and a window layer underneath the front contact layer, where the window layer also acts as an etch stop layer. At least one metal layer is deposited on the front contact layer, and a resist is applied on portions of the at least one metal layer. The at least one metal layer and the front contact layer are etched through to achieve the desired metallization.08-09-2012
20120204942OPTOELECTRONIC DEVICES INCLUDING HETEROJUNCTION AND INTERMEDIATE LAYER - Embodiments generally relate to optoelectronic semiconductor devices such as solar cells. In one aspect, a device includes an absorber layer made of gallium arsenide (GaAs) and having only one type of doping. An emitter layer is located closer than the absorber layer to a back side of the device and is made of a different material and having a higher bandgap than the absorber layer. A heterojunction is formed between the emitter layer and the absorber layer, and a p-n junction is formed between the emitter layer and the absorber layer and at least partially within the different material at a location offset from the heterojunction. An intermediate layer is located between the absorber layer and the emitter layer and provides the offset of the p-n junction from the heterojunction, and includes a graded layer and an ungraded back window layer.08-16-2012
20120252159METHODS FOR FORMING OPTOELECTRONIC DEVICES INCLUDING HETEROJUNCTION - Embodiments generally relate to optoelectronic semiconductor devices such as photovoltaic cells. In one aspect, a method for forming a device includes forming an absorber layer made of gallium arsenide (GaAs) and having one type of doping, and forming an emitter layer made of a different material and having a higher bandgap than the absorber layer. An intermediate layer can be formed between emitter and absorber layers. A heterojunction and p-n junction are formed between the emitter layer and the absorber layer, where the p-n junction is formed at least partially within the different material at a location offset from the heterojunction. A majority of the absorber layer can be outside of a depletion region formed by the p-n junction. The p-n junction causes a voltage to be generated in the cell in response to the cell being exposed to light at a front side.10-04-2012
20120305059PHOTON RECYCLING IN AN OPTOELECTRONIC DEVICE - An optoelectronic semiconductor device includes an absorber layer made of a direct bandgap semiconductor and having only one type of doping. An emitter layer is located closer than the absorber layer to a back side of the device, the emitter layer made of a different material than the absorber layer and having a higher bandgap than the absorber layer. A heterojunction is formed between the emitter layer and the absorber layer, and a p-n junction is formed between the emitter layer and the absorber layer at a location offset from the heterojunction. The p-n junction causes a voltage to be generated in the device in response to the device being exposed to light at a front side of the device. The device also includes an n-metal contact disposed on a front side of the device and a p-metal contact disposed on the back side of the device.12-06-2012
20130270589OPTOELECTRONIC DEVICE WITH NON-CONTINUOUS BACK CONTACTS - An optoelectronic device is disclosed. The optoelectronic device comprises a semiconductor structure; a plurality of contacts on the front side of the semiconductor structure; and a plurality of non-continuous metal contacts on a back side of the semiconductor structure. In an embodiment, a plurality of non-continuous back contacts on an optoelectronic device improve the reflectivity and reduce the losses associated with the back surface of the device.10-17-2013

Brendan M. Kayes, Los Gatos, CA US

Patent application numberDescriptionPublished
20150228835OPTOELECTRONIC DEVICES INCLUDING HETEROJUNCTION AND INTERMEDIATE LAYER - Embodiments generally relate to optoelectronic semiconductor devices such as solar cells. In one aspect, a device includes an absorber layer made of gallium arsenide (GaAs) and having only one type of doping. An emitter layer is located closer than the absorber layer to a back side of the device and is made of a different material and having a higher bandgap than the absorber layer. A heterojunction is formed between the emitter layer and the absorber layer, and a p-n junction is formed between the emitter layer and the absorber layer and at least partially within the different material at a location offset from the heterojunction. An intermediate layer is located between the absorber layer and the emitter layer and provides the offset of the p-n junction from the heterojunction, and includes a graded layer and an ungraded back window layer.08-13-2015

Kevin Kayes, Colorado Springs, CO US

Patent application numberDescriptionPublished
20110087991Methods and Apparatus for Reliable Entry and Enhanced Presentation of IPv6 Addresses - A technique for establishing an IPv6 address for a network device involves displaying a prefix field for accessing a list of IPv6 address prefixes, an interface identifier field for accessing a list of interface identifiers, and a fillable address field for entering an IPv6 address. An IPv6 address is constructed in the address field from an IPv6 address prefix selected from the prefix field and an interface identifier selected from the interface identifier field. The IPv6 address can be modified by manually entering characters via a user interface. A technique for displaying IPv6 addresses involves combining a mnemonic, which replaces the digits of the IPv6 address prefix portion of the address, together with the digits of the interface identifier of the IPv6 address. IPv6 addresses not associated with a mnemonic are readily identifiable.04-14-2011

Scott Kayes, Concord CA

Patent application numberDescriptionPublished
20090198816DIGITAL SIGNAGE NETWORK - A digital signage network employs a common data model and a subscription system to disseminate data gathered from a plurality of data sources to a number of displays. The network nodes interact with each other as content sources, content consumers, or both, with some systems acting as consumers to upstream sources and acting as sources to downstream consumers. The presentation of the data on a digital signage display allows for real-time binding of live data to provide a rich display effect.08-06-2009
20090198823DIGITAL SIGNAGE DISPLAY - A digital signage network employs a common data model and a subscription system to disseminate data gathered from a plurality of data sources to a number of displays. The network nodes interact with each other as content sources, content consumers, or both, with some systems acting as consumers to upstream sources and acting as sources to downstream consumers. The presentation of the data on a digital signage display allows for real-time binding of live data to provide a rich display effect.08-06-2009
20090199108SUBSCRIPTION BASED CONTENT DELIVERY FOR A DIGITAL SIGNAGE NETWORK - A digital signage network employs a common data model and a subscription system to disseminate data gathered from a plurality of data sources to a number of displays. The network nodes interact with each other as content sources, content consumers, or both, with some systems acting as consumers to upstream sources and acting as sources to downstream consumers. The presentation of the data on a digital signage display allows for real-time binding of live data to provide a rich display effect.08-06-2009
20110208832SUBSCRIPTION BASED CONTENT DELIVERY FOR A DIGITAL SIGNAGE NETWORK - A digital signage network employs a common data model and a subscription system to disseminate data gathered from a plurality of data sources to a number of displays. The network nodes interact with each other as content sources, content consumers, or both, with some systems acting as consumers to upstream sources and acting as sources to downstream consumers. The presentation of the data on a digital signage display allows for real-time binding of live data to provide a rich display effect.08-25-2011
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