Patent application number | Description | Published |
20090025866 | Method for Attaching Hard Article and Transfer-Type Adhesive Material - A transfer-type adhesive material A is obtained by applying a adhesive | 01-29-2009 |
20090202818 | ADHESIVE PRODUCT AND TRANSFER DEVICE - In order to provide an adhesive product capable of effectively maintaining security, the present invention is a pressure sensitive transfer tape ( | 08-13-2009 |
20100092773 | Method of Affixation, and Pressure-Sensitive Adhesive for Use in Affixation - A pressure-sensitive adhesive is constituted at least by one or two kinds or more of a polymer and a tackifier, the polymer is selected from the polymer obtained by polymerizing olefin unsaturated-group containing polymerizable monomer by an ordinary method, a copolymer obtained by copolymerizing a monomer mixture containing two or more types of olefin unsaturated-group containing polymerizable monomer by an ordinary method, and natural rubber, wherein the pressure-sensitive adhesive for available affixation has substantially no initial tack value and exerts adhesion by pressurization processing. | 04-15-2010 |
20100260979 | Adhesive sheet and transfer tool - The adhesive sheet according to the present invention includes a sheet body, and a geometry adhesive portion forming geometry of a letter or a figure by aggregating and arranging adhesive dots different in dot diameter, which are intermittently applied onto the sheet body. Moreover, the adhesive sheet includes a background adhesive portion made of the adhesive dots intermittently arranged around the geometry adhesive portion. | 10-14-2010 |
20110250408 | ADHESIVE PRODUCT, AND TRANSFER TOOL - A necessary and sufficient adhesive force of an adhesive agent layer is certainly kept while the dot diameter of the adhesive agent is made smaller and the thickness of the adhesive agent layer is made smaller. For the purpose, in an adhesive product, comprising an adhesive agent layer in which dots of a dot-form adhesive agent | 10-13-2011 |
Patent application number | Description | Published |
20130020448 | WIRE HOLDING STRUCTURE - An wire holding structure includes a member and a pair of protrusions. The member includes an arranging surface on which the wire is arranged and at least one pair of standing surfaces respectively opposing both sides of the wire. The protrusions are protruded from the standing surfaces respectively opposing the both sides of the wire. The protrusions are disposed at positions which are shifted each other in the arranging direction, so that a gap between the protrusions is larger than a diameter of the wire and a gap between tips of the protrusions projected in the arranging direction is smaller than the diameter of the wire. A distance between the arranging surface and the protrusions is larger than the diameter of the wire. | 01-24-2013 |
20130020987 | BATTERY PACK CONTROLLER - The assemblability of LA terminals with electric wires is improved. The electric wires of the main wiring lines of a precharge circuit are laid on the front surface of a base plate, LA terminals connected to the electric wires are clamped to the relay terminal portions of a main relay mounted on the rear surface, by screws together with main-circuit bus bars, each of the LA terminals has a wing portion protruded beyond the protuberant height of an electric-wire connection portion, an electric wire is bent and disposed to extend from the front surface side of the base plate toward the relay terminal portion, a terminal accommodation portion in which the LA terminals are accommodated is provided at a part extending from the electric-wire bent portion to the relay terminal portion, and bottomed grooves into which the wing portions are inserted are formed in the terminal accommodation portion. | 01-24-2013 |
20140319291 | WIRE HOLDING STRUCTURE - Provided is a wire holding structure including: a wire; a member, on which the wire is arranged in an arranging direction, and which includes an arranging surface on which the wire is arranged and at least one pair of standing surfaces including a first standing surface and a second surface respectively opposing both sides of the wire; and at least three protrusions including a first protrusion, a second protrusion and a third protrusion, the first and third protrusions protruding from the first standing surface and the second protrusion protruding from the second standing surface. | 10-30-2014 |
20150248980 | RELAY FIXING STRUCTURE - Rib portions ( | 09-03-2015 |
Patent application number | Description | Published |
20100170802 | POWER FEEDING METHOD, CONTINUOUS ELECTROLYTIC PLATING APPARATUS FOR WEB AND METHOD FOR MANUFACTURING PLASTIC FILM WITH PLATED COATING FILM - Two rotating members placed to face each other and nipping a web such that only an end of the web provided with conductivity is pressed are provided, at least one of the rotating members serves as a feeding electrode, and these rotating members are rotated about the same velocity, to a transportation velocity of the web. | 07-08-2010 |
20120261268 | POWER FEEDING METHOD, CONTINUOUS ELECTROLYTIC PLATING APPARATUS FOR WEB AND METHOD FOR MANUFACTURING PLASTIC FILM WITH PLATED COATING FILM - Two rotating members placed to face each other and nipping a web such that only an end of the web provided with conductivity is pressed are provided, at least one of the rotating members serves as a feeding electrode, and these rotating members are rotated about the same velocity to a transportation velocity of the web. | 10-18-2012 |
20130327635 | MAGNETRON ELECTRODE FOR PLASMA PROCESSING - The invention aims to provide a magnetron electrode for plasma treatment that is free of significant abnormal electrical discharge and able to perform electrical discharge with long-term stability. A second electrode is provided only at a position outside the inner side surface of the outer magnetic pole of a first electrode or at a position where the magnetic flux density is low. | 12-12-2013 |
20150060263 | VACUUM FILM DEPOSITION DEVICE AND VACUUM FILM DEPOSITION METHOD - In order to provide an adhesion preventing plate for a vacuum film formation apparatus, the adhesion preventing plate being capable of suppressing the peel-off of an adhered film to an extremely low level regardless of a protection target member, the adhesion preventing plate is arranged so that the area of contact with the protection target member is reduced and a part other than the contact surface is thermally insulated. | 03-05-2015 |
Patent application number | Description | Published |
20090073490 | COMMUNICATION INFORMATION PROCESSING SYSTEM - A communication information processing device that includes a reception component, an image processing component, a memory component and a control component is provided. The reception component receives communication information through an external communication line. The image processing component performs image processing on image information. The memory component is provided for memorizing image information for image processing by the image processing component, and that memorizes image information and the communication information received by the reception component. The control component, when a pre-specified setting condition is satisfied, controls the memory component so as to delete the communication information memorized in the memory component and to memorize image information to be used by the image processing component as a priority. | 03-19-2009 |
20100128305 | RECEIVER, IMAGE FORMING DEVICE, DATA RECEPTION METHOD AND PROGRAM STORAGE MEDIUM - A receiver includes a first storage unit, plural second storage units, a selector, a storage controller, and a selection controller. The first storage unit stores at least one packet data. The plural second storage units respectively store at least one condition associated with packet data to be stored in the first storage unit. The selector selects at least one storage unit from the second storage units in accordance with a selection signal. The storage controller stores the packet data in the first storage unit if a received packet data corresponds to any condition stored in a selected storage unit, and discards the packet data if it does not correspond to any condition. The selection controller generates a selection signal for selecting at least one second storage unit in accordance with conditions to which the packet data stored by the storage controller corresponds, and transmits the signal to the selector. | 05-27-2010 |
20100241778 | INTERRUPT CONTROL APPARATUS AND IMAGE FORMING APPARATUS - An interrupt control apparatus includes: an interrupt request supply unit that supplies interrupt request information; a processing unit that performs interrupt processing based on the interrupt request information supplied by the interrupt request supply unit; and a time measuring unit that is used to measure an elapse of a predefined time period from a time point when the interrupt request supply unit starts to supply the interrupt request information, wherein: even if new interrupt cause information is stored during the time when the time measuring unit is measuring the elapse of the predefined time period, the interrupt request supply unit does not supply interrupt request information based on the new interrupt cause information to the processing unit; and after the elapsed time measured by the time measuring unit reaches the predefined time period, the interrupt request supply unit supplies the interrupt request information to the processing unit. | 09-23-2010 |
20100245893 | IMAGE FORMING APPARATUS, COMMUNICATION DEVICE, COMPUTER READABLE MEDIUM, AND COMMUNICATION METHOD - An image forming apparatus includes: a communication unit that receives a request that requests a reply and includes a source of the request and a destination of the request; and a controller that returns from a low electric power condition after moving into the low electric power condition of which the power consumption is low, and that controls the communication unit, wherein when the controller is in the low electric power condition, the communication unit returns the reply to the request received and detects a duplication between an identification information that identifies the source and an identification information that identifies the destination based on the request. | 09-30-2010 |
20100246380 | COMMUNICATION CONTROL DEVICE AND INFORMATION PROCESSING APPARATUS - A communication control device includes: a first processing unit that converts an electrical signal received by a communication channel into digital data and outputs the digital data, and in a second operation mode in which an amount of power supplied to the communication control device is lower than in a first operation mode, outputs a notification signal upon receiving an electrical signal indicating an arrival of packet data; a clock controller that, in the second operation mode, initiates supplying a clock signal upon receiving the notification signal; and a second processing unit that (i) has a receiving unit that extracts packet data from the digital data and outputs the extracted packet data, and (ii) in the second operation mode, stops receiving packet data during a time that the clock signal is not supplied, and upon reception of the clock signal, starts receiving packet data using the received clock signal. | 09-30-2010 |
20110228316 | COMMUNICATION CONTROL APPARATUS, IMAGE FORMING APPARATUS AND COMPUTER READABLE MEDIUM - A communication control apparatus including: a count portion that counts the number of received data; and a discard portion that is provided at an upstream side of a control portion on a forwarding route of the received data, and discards received data according to a counted value by the count portion. | 09-22-2011 |
20120327440 | PROGRAM EXECUTING APPARATUS, IMAGE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER READABLE MEDIUM - A program executing apparatus, includes : a nonvolatile memory that stores a program for activating an equipment and a variable used in the program and sustains the stored program and the variable even though power is not supplied, the program and the variable being able to be read out and written into the nonvolatile memory; and an executing unit that transmits the program and the variable to the nonvolatile memory when the activation of the equipment is instructed at an initial status where the program and the variable are not stored in the nonvolatile memory, and successively executes the program using the variable stored in the nonvolatile memory, and, when the activation of the equipment is re-instructed, executes the program using the variable stored in the nonvolatile memory. | 12-27-2012 |
20120331236 | DATA PROCESSING APPARATUS AND IMAGE FORMING APPARATUS - A data processing apparatus includes an operation unit, a writable and readable volatile register, a writable and readable nonvolatile memory, first and second writing units and a write-back unit. The operation unit performs an arithmetic operation and a logical operation. The writable and readable volatile register stores data used in the operations performed by the operation unit. The writable and readable nonvolatile memory stores the data in parallel with the volatile register. The data stored in the nonvolatile memory is the data stored in the volatile register. The first writing unit writes the data in the volatile register. The second writing unit writes the data in the nonvolatile memory in parallel with the first writing unit every time the data is written in the volatile register. The write-back unit writes back the data stored in the nonvolatile memory to the volatile register when a power supply is turned on. | 12-27-2012 |
20130229681 | INFORMATION PROCESSING APPARATUS, IMAGE FORMING APPARATUS, NON-TRANSITORY COMPUTER READABLE MEDIUM STORING PROGRAM, AND INFORMATION PROCESSING METHOD - An information processing apparatus includes an execution unit that executes a program, a main storage unit that includes a first non-volatile memory which is readable and writable and is capable of retaining stored information even when no power is supplied and is provided with a first storage area which stores the program executed by the execution unit and a second storage area which stores data generated by the execution of the program by the execution unit, a connection unit that connects the execution unit and the main storage unit, and a condition storage unit that includes a second non-volatile memory which is readable and writable and is capable of retaining stored information even when no power is supplied and stores conditions which are set by the connection unit to transmit and receive the program and the data between the execution unit and the main storage unit. | 09-05-2013 |
20130235419 | IMAGE FORMING APPARATUS AND INFORMATION PROCESSING APPARATUS - An image forming apparatus includes an image forming unit that forms an image and a controller that controls the image forming unit, wherein the controller includes a first execution unit that executes a first program, a first main memory that includes a first non-volatile memory, is connected to the first execution unit, and stores a first start program, a first transmission and reception controller that is connected to the first bus, controls the transmission and reception of data, and includes a volatile memory, a second execution unit that is connected to the first execution unit and executes a second program, a second main memory that includes a second non-volatile memory, is connected to the second execution unit, and stores a second start program, and a second transmission and reception controller that is connected to the second bus, controls the transmission and reception of data, and includes a third non-volatile memory. | 09-12-2013 |
Patent application number | Description | Published |
20090014843 | MANUFACTURING PROCESS AND STRUCTURE OF THROUGH SILICON VIA - A through silicon via reaching a pad from a second surface of a semiconductor substrate is formed. A penetration space in the through silicon via is formed of a first hole and a second hole with a diameter smaller than that of the first hole. The first hole is formed from the second surface of the semiconductor substrate to the middle of the interlayer insulating film. Further, the second hole reaching the pad from the bottom of the first hole is formed. Then, the interlayer insulating film formed on the first surface of the semiconductor substrate has a step shape reflecting a step difference between the bottom surface of the first hole and the first surface of the semiconductor substrate. More specifically, the thickness of the interlayer insulating film between the bottom surface of the first hole and the pad is smaller than that in other portions. | 01-15-2009 |
20090189256 | MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - After forming a ring-shaped trench penetrating through a semiconductor substrate from a rear surface side thereof and forming an insulating film inside the trench and on the rear surface of the semiconductor substrate, a through hole is formed in the insulating film and semiconductor substrate on an inner side of the ring-shaped trench from the rear surface side, thereby exposing a surface protection insulating film formed on a front surface of the semiconductor substrate at a bottom of the through hole. After removing the surface protection insulating film at the bottom of the through hole to form an opening to expose an element surface electrode, a contact electrode connected to the element surface electrode is formed on inner walls of the through hole and opening, and a pad electrode made of the same layer as the contact electrode is formed on the rear surface of the semiconductor substrate. | 07-30-2009 |
20090309218 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - When a through-hole electrode and a rear-surface wire are formed on a rear surface of a chip, a convex portion is formed on the rear surface of the chip due to a rear-surface wiring pad which is a part of the through-hole electrode and the rear-surface wire. This causes the air leakage when the chip is sucked, and therefore, the reduction of the sucking force of the chip occurs. A concave portion is formed in advance in a region where a rear-surface wiring pad and a rear-surface wire are formed. The rear-surface wiring pad and the rear-surface wire are provided inside the concave portion. Thus, a flatness of the rear surface of the chip is ensured by a convex portion caused by thicknesses of the rear-surface wiring pad and the rear-surface wire, so that the reduction of the sucking force does not occur when the chip is handled. | 12-17-2009 |
20100155940 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a semiconductor device in which a plurality of semiconductor chips are stacked, performance is enhanced without deteriorating productivity. The semiconductor device has a plurality of elements, an interlayer insulating film, a pad, and a bump electrode electrically connected with the pad sequentially formed on a main surface of a silicon substrate and has a back-surface electrode formed on a back surface of the silicon substrate and electrically connected with the bump electrode. The bump electrode has a protruding portion penetrating through the pad and protruding toward the silicon substrate side. The back-surface electrode is formed so as to reach the protruding portion of the bump electrode from the back surface side of the silicon substrate toward the main surface side and to cover the inside of a back-surface-electrode hole portion which does not reach the pad, so that the back-surface electrode is electrically connected with the bump electrode. | 06-24-2010 |
20110233773 | MANUFACTURING PROCESS AND STRUCTURE OF THROUGH SILICON VIA - A through silicon via reaching a pad from a second surface of a semiconductor substrate is formed. A penetration space in the through silicon via is formed of a first hole and a second hole with a diameter smaller than that of the first hole. The first hole is formed from the second surface of the semiconductor substrate to the middle of the interlayer insulating film. Further, the second hole reaching the pad from the bottom of the first hole is formed. Then, the interlayer insulating film formed on the first surface of the semiconductor substrate has a step shape reflecting a step difference between the bottom surface of the first hole and the first surface of the semiconductor substrate. More specifically, the thickness of the interlayer insulating film between the bottom surface of the first hole and the pad is smaller than that in other portions. | 09-29-2011 |
20120091583 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a semiconductor device in which a plurality of semiconductor chips are stacked, performance is enhanced without deteriorating productivity. The semiconductor device has a plurality of elements, an interlayer insulating film, a pad, and a bump electrode electrically connected with the pad sequentially formed on a main surface of a silicon substrate and has a back-surface electrode formed on a back surface of the silicon substrate and electrically connected with the bump electrode. The bump electrode has a protruding portion penetrating through the pad and protruding toward the silicon substrate side. The back-surface electrode is formed so as to reach the protruding portion of the bump electrode from the back surface side of the silicon substrate toward the main surface side and to cover the inside of a back-surface electrode hole portion which does not reach the pad, so that the back-surface electrode is electrically connected with the bump electrode. | 04-19-2012 |
20120108055 | MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - After forming a ring-shaped trench penetrating through a semiconductor substrate from a rear surface side thereof and forming an insulating film inside the trench and on the rear surface of the semiconductor substrate, a through hole is formed in the insulating film and semiconductor substrate on an inner side of the ring-shaped trench from the rear surface side, thereby exposing a surface protection insulating film formed on a front surface of the semiconductor substrate at a bottom of the through hole. After removing the surface protection insulating film at the bottom of the through hole to form an opening to expose an element surface electrode, a contact electrode connected to the element surface electrode is formed on inner walls of the through hole and opening, and a pad electrode made of the same layer as the contact electrode is formed on the rear surface of the semiconductor substrate. | 05-03-2012 |
20150255374 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - In a semiconductor device in which a plurality of semiconductor chips are stacked, performance is enhanced without deteriorating productivity. The semiconductor device has a first semiconductor substrate having a first surface and a second surface opposite the first surface, a first insulating film formed on the first surface, a first hole formed in the first insulating film and partially extending into the first semiconductor substrate, a second hole formed in the second surface, a first electrode entirely filling the first hole, and a conductive film conformally formed in the second hole. The conductive film is electrically connected to a bottom surface of the first electrode and leaves a third hole in the first semiconductor substrate open. The third hole is configured to receive a second electrode of a second semiconductor substrate. | 09-10-2015 |
Patent application number | Description | Published |
20120108564 | 1,3,4,8-Tetrahydro-2H-Pyrido[1,2-a]Pyradine Derivatives and Use Thereof as HIV Integrase Inhibitor - [Problem] Provided is a novel 1,3,4,8-tetrahydro-2H-pyrido[1,2-a]pyrazine derivative or a pharmaceutically acceptable salt thereof, or a solvate thereof, which is useful as an anti-HIV agent. | 05-03-2012 |
20140221378 | SUBSTITUTED SPIROPYRIDO[1,2-a]PYRAZINE DERIVATIVE AND PHARMACEUTICAL USE OF SAME AS HIV INTEGRASE INHIBITOR - Provided is a substituted spiropyrido[1,2-a]pyrazine derivative or a pharmaceutically acceptable salt thereof, which is useful as an anti-HIV agent. The present invention relates to a compound represented by the following formula [I] or [II] or a pharmaceutically acceptable salt thereof: | 08-07-2014 |
20140221380 | SUBSTITUTED SPIROPYRIDO[1,2-a]PYRAZINE DERIVATIVE AND PHARMACEUTICAL USE OF SAME AS HIV INTEGRASE INHIBITOR | 08-07-2014 |
20160046641 | SUBSTITUTED SPIROPYRIDO[1,2-a]PYRAZINE DERIVATIVE AND PHARMACEUTICAL USE OF SAME AS HIV INTEGRASE INHIBITOR - [Problem] Provided is a substituted spiropyrido[1,2-a]pyrazine derivative or a pharmaceutically acceptable salt thereof, which is useful as an anti-HIV agent. | 02-18-2016 |
Patent application number | Description | Published |
20120153759 | RARE EARTH MAGNET MOLDING AND METHOD FOR MANUFACTURING THE SAME - A rare earth magnet molding ( | 06-21-2012 |
20140312523 | THICK RARE EARTH MAGNET FILM AND LOW-TEMPERATURE SOLIDIFYING AND MOLDING METHOD - A thick magnet film contains a rare earth magnet phase represented by formula R-M-X, where R contains at least one of Nd and Sm, M contains at least one of Fe and Co, and X contains at least one of N and B. The thick magnet film has a density of equal to or more than 80% but less than 95% of the theoretical density when R contains Nd as a main component and has the density of equal to or more than 80% but less than 97% of the theoretical density when R contains Sm as a main component. The magnet can achieve an increase in thickness when formed into a film, an increase in density and an improvement in magnetic properties such as residual magnetic flux density. | 10-23-2014 |
20140349099 | MOLDED RARE-EARTHRARE-EARTH MAGNET AND LOW TEMPERATURE SOLIDIFICATION MOLDING METHOD - A molded rare-earth magnet which simultaneously satisfies increased film thickness, high density, and improved magnetic properties (in particular, coercive force, residual magnetic flux density, and tight adhesion) has a rare-earth magnet phase that contains as a main component a nitride which contains Sm and Fe, in which the molded rare-earth magnet has a density of 80% or higher of the theoretical density of a molded magnet constituted of the rare-earth magnet phase, and has a structure in which particles of Zn and/or Mn have been dispersed in the molded magnet. | 11-27-2014 |