Katsuno, JP
Aki Katsuno, Shiga JP
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20110132834 | COMPOSITE SEMIPERMEABLE MEMBRANE AND MANUFACTURING METHOD THEREFOR - In manufacturing a composite semipermeable membrane useful for separating a liquid mixture selectively, it is rendered possible to provide a composite semipermeable membrane that exhibits reduced deterioration of water permeability and solute removing property as a result of drying and that demonstrates reduced economic burden and load for waste liquid treatment without impairing the water permeability or solute removal ratio of the composite semipermeable membrane through change of the membrane manufacturing method, by making a saccharide exist in an aqueous polyfunctional amine solution in performing interfacial polycondensation by bringing the aqueous solution of the polyfunctional amine into contact with an organic solvent solution containing a polyfunctional acid halide on a microporous support membrane. | 06-09-2011 |
Eiji Katsuno, Tokyo JP
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20150044551 | NONAQUEOUS SECONDARY BATTERY - Disclosed is a nonaqueous secondary battery using a positive electrode containing a transition metal and lithium. The battery is prevented from deterioration due to elution of the transition metal from the positive electrode and thereby capable of maintaining small internal resistance and high electrical capacity even after high temperature storage or high-temperature charge and discharge cycles. The battery includes a negative electrode capable of intercalating and deintercalating lithium, a positive electrode containing a transition metal and lithium, and a nonaqueous electrolyte having a lithium salt dissolved in an organic solvent, the nonaqueous electrolyte containing a polycarboxylic ester compound represented by general formula (1) or (2). | 02-12-2015 |
20150206664 | ELECTRICITY STORAGE DEVICE - An electricity storage device maintains low internal resistance and high electric capacity. The nonaqueous-electrolytic-solution hybrid electricity storage device employs an anode into/from which lithium can be intercalated and deintercalated and a cathode including activated carbon, even after high-temperature storage and/or high-temperature charging/discharging. Specifically, this electricity storage device includes an anode into/from which lithium can be intercalated and deintercalated, a cathode that includes activated carbon, and a nonaqueous electrolytic solution, wherein the electricity storage device employs a nonaqueous electrolytic solution that includes at least one type of compound represented by one of general formulas (1) to (5). Details on the general formulas (1) to (5) are as described in the Description. | 07-23-2015 |
Hiroshi Katsuno, Kanagawa JP
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20130135519 | OPTICAL FUNCTION DEVICE AND IMAGE-CAPTURING DEVICE - An optical function device includes a base material layer, a semi-transparent layer formed on a principal plane of the base material layer, the semi-transparent layer reflecting light of incident light at a ratio determined in advance and passing remaining light; and a reflection prevention layer formed on a principal plane opposite to the principal plane of the base material layer with respect to the base material layer, the reflection prevention layer preventing reflection of the light passing through the base material layer. The image-capturing device includes an optical function device, a first light receiving device for receiving transmission light from the optical function device, and a second light receiving device for receiving reflection light from the optical function device. | 05-30-2013 |
Hiroshi Katsuno, Ishikawa-Ken JP
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20140361345 | NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR ELEMENT, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR WAFER - A nitride semiconductor wafer includes a silicon substrate, a first layer, a second layer, a third layer, a fourth layer, a fifth layer, and a sixth layer. The first layer is provided on the silicon substrate. The second layer is provided on the first layer. The third layer is provided on the second layer. The fourth layer is provided on the third layer. The fifth layer is provided on the fourth layer. The sixth layer is provided on the fifth layer. A composition ratio x4 of the fourth layer decreases in a first direction from the third layer toward the fifth layer. A maximum value of the composition ratio x4 is not more than a composition ratio of the third layer. A minimum value of the composition ratio x4 is not less than a composition ratio of the fifth layer. | 12-11-2014 |
20150325428 | NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR ELEMENT, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR WAFER - A nitride semiconductor wafer includes a silicon substrate, a first layer, a second layer, a third layer, a fourth layer, a fifth layer, and a sixth layer. The first layer is provided on the silicon substrate. The second layer is provided on the first layer. The third layer is provided on the second layer. The fourth layer is provided on the third layer. The fifth layer is provided on the fourth layer. The sixth layer is provided on the fifth layer. A composition ratio x4 of the fourth layer decreases in a first direction from the third layer toward the fifth layer. A maximum value of the composition ratio x4 is not more than a composition ratio of the third layer. A minimum value of the composition ratio x4 is not less than a composition ratio of the fifth layer. | 11-12-2015 |
Hiroshi Katsuno, Komatsu Ishikawa JP
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20150325747 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - According to one embodiment, a semiconductor light emitting element includes a stacked body, a first electrode, a second electrode and a first layer. The stacked body includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. The first semiconductor layer has a first conductivity type. The second semiconductor layer has a second conductivity type. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The first electrode is connected to the first semiconductor layer. The first electrode includes a line-shaped portion and a bent portion. The line-shaped portion is linked to the bent portion. The second electrode is connected to the second semiconductor layer. The first layer is provided between part of the first semiconductor layer and the bent portion of the first electrode. | 11-12-2015 |
Hiroshi Katsuno, Osaka JP
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20080278747 | Thermal dye sublimation printer and ink ribbon cassette therefor - A thermal dye sublimation printer to which an ink ribbon cassette having a function of transmitting and receiving data via wireless communication with a printer main body is attached, is disclosed. The thermal dye sublimation printer includes: communication means that transmits and receives data via wireless communication with an ink ribbon cassette; and control means that acquires management information of the ink ribbon cassette stored in the ink ribbon cassette side via the communication means and controls printing processing based on the acquired management information. | 11-13-2008 |
Hiroshi Katsuno, Kanagawa-Ken JP
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20090050916 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING APPARATUS - A semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode provided on the first semiconductor layer, a second electrode including a first metal film provided on the second semiconductor layer and containing at least one of silver and a silver alloy, and a second metal film provided on the first metal film and made of a metal substantially not containing silver, and a dielectric film spaced from the first metal film on the second semiconductor layer. The second metal film covers the first metal film, at least part of the dielectric film, and a surface of the second semiconductor layer exposed between the first metal film and the dielectric film. | 02-26-2009 |
20090057707 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitting device includes: a laminated body including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; a first electrode provided on a first major surface of the laminated body and connected to the first semiconductor layer; and a second electrode provided on the first major surface of the laminated body and connected to the second semiconductor layer. The first electrode includes: a first region provided on the first semiconductor layer and including a first metal film; and a second region provided on the first semiconductor layer and including a second metal film, the second metal film having a higher reflectivity for light emitted from the light emitting layer than the first metal film and having a higher contact resistance with respect to the first semiconductor layer than the first metal film. | 03-05-2009 |
Hiroshi Katsuno, Komatsu JP
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20150060763 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes an n-type semiconductor layer and a first metal layer. The n-type semiconductor layer includes a nitride semiconductor. The n-type semiconductor layer includes a boron-containing region including boron bonded to oxygen. The first metal layer contacts the boron-containing region. | 03-05-2015 |
20150084069 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT - According to one embodiment, a semiconductor light emitting element includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer including a nitride semiconductor, a light emitting unit, a first layer, a second layer, and a third layer. The light emitting unit is provided between the n-type and p-type semiconductor layers, and includes a first well layer including a nitride semiconductor. The first layer is provided between the first well layer and the p-type semiconductor layer, and includes Al | 03-26-2015 |
Hiroyuki Katsuno, Kodaira-Shi JP
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20150298506 | PNEUMATIC TIRE - A pneumatic tire ( | 10-22-2015 |
20150321518 | PNEUMATIC TIRE - A pneumatic tire ( | 11-12-2015 |
Hiroyuki Katsuno, Setagaya-Ku JP
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20140190608 | TIRE MOLD, TIRE, AND TIRE MANUFACTURING METHOD - The tread surface of a tire according to the present invention is molded with a tire mold having a tread molding surface, and at least a portion of the tread molding surface is formed by projecting spherical projection material having a predetermined sphericity and causing the spherical projection material to collide. | 07-10-2014 |
20150020939 | TIRE MOLD, TIRE, AND TIRE MANUFACTURING METHOD - The tread surface of a tire according to the present invention is molded with a tire mold having a tread molding surface, and at least a portion of the tread molding surface is formed by projecting spherical projection material having a predetermined sphericity and causing the spherical projection material to collide. | 01-22-2015 |
20150021813 | TIRE MOLD, TIRE, AND TIRE MANUFACTURING METHOD - The tread surface of a tire according to the present invention is molded with a tire mold having a tread molding surface, and at least a portion of the tread molding surface is formed by projecting spherical projection material having a predetermined sphericity and causing the spherical projection material to collide. | 01-22-2015 |
Hiroyuki Katsuno, Tokyo JP
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20150290978 | PNEUMATIC TIRE - A pneumatic tire, comprising: a tread surface; a plurality of grooves formed in the tread surface, including a plurality of widthwise grooves each extending from a corresponding tread end on the inner side in the tread width direction and a plurality of circumferential grooves each extending in the tread circumferential direction to intersect the widthwise grooves; blocks demarcated by the plurality of grooves; and a chamfered portion formed at a corner, on the trailing edge side and on the outer side in the tread width direction, of each block. | 10-15-2015 |
Hisashi Katsuno, Chiba JP
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20090075131 | DESULFURIZING AGENT AND METHOD OF DESULFURIZATION WITH THE SAME - The invention provides a desulfurizing agent which attains effective removal of sulfur from a hydrocarbon feedstock and/or an oxygen-containing hydrocarbon feedstock so as to attain a considerably low sulfur level and which has a long service life; a process for producing hydrogen for fuel cells, which process includes steam-reforming, partial-oxidation-reforming, or autothermal-reforming of a hydrocarbon feedstock and/or an oxygen-containing hydrocarbon feedstock which has been desulfurized by use of the desulfurizing agent; a fuel cell system employing hydrogen produced through the process. | 03-19-2009 |
Iwao Katsuno, Chiyoda-Ku JP
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20090206457 | RESIN MOLDING PART AND MANUFACTURING METHOD THEREOF - A primary molding product is formed by integrally forming a first lead frame and a second lead frame with a primary molding resin portion. In addition, in order to prevent separation of the first lead frame and the second lead frame from the primary molding resin portion, a hook-and-hold portion for preventing separation of the first lead frame from the primary molding resin portion and separation of the second lead frame from the primary molding resin portion is provided on an outer surface of each of the first lead frame and the second lead frame. Thus, a resin molding part capable of achieving suppression of increase in a thickness thereof without deformation or displacement of a lead frame and a manufacturing method thereof can be provided. | 08-20-2009 |
Kenji Katsuno, Nagano JP
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20090286751 | PROGRESSION INHIBITOR FOR DISEASE ATTRIBUTED TO ABNORMAL ACCUMULATION OF LIVER FAT - The present invention provides pharmaceutical compositions useful as agents for the inhibition of progression of diseases associated with abnormal accumulation of liver lipids. In particular, the pharmaceutical compositions of the present invention which comprise as an active ingredient a sodium/glucose co-transporter 2 inhibitor are highly suitable as an agent for the inhibition of progression of not only common fatty liver but also non-alcoholic fatty liver disease (NAFL), non-alcoholic steatohepatitis (NASH), hypernutritive fatty liver, diabetic fatty liver, alcoholic fatty liver disease toxic fatty liver or the like. | 11-19-2009 |
Kotaro Katsuno, Shizuoka JP
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20090277710 | DRY CLUTCH, AND MOTORCYCLE EQUIPPED WITH THE SAME - In some preferred embodiments, the dry clutch is capable of suppressing transmission of engine rotational fluctuations from the engine to a rider via a vehicle body. In the dry clutch including a driving member (clutch shoe) | 11-12-2009 |
Manami Katsuno, Tokyo JP
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20100189286 | AUDIO CONFERENCE SYSTEM - An audio conference system including a controller, a plurality of microphones, and an antenna that makes the controller and the microphones communicate via radio communication, in which the controller includes: an utterance permitting unit that, in response to utterance request instruction information received from any of the microphones, transmits utterance permission instruction information to the microphone; and an utterance inhibiting unit that, in response to utterance inhibition request instruction information received from any of the microphones, transmits utterance inhibition instruction information to the other microphones, and the microphones each include: an utterance requesting unit that transmits utterance request instruction information to the controller and transmits, to the controller, a speech signal input after receiving the utterance permission instruction information from the controller; and an utterance stopping unit that stops transmission of the speech signal to the controller upon receiving the utterance inhibition instruction information from the controller. According to the audio conference system, an audio conference system which allows the chair of a conference to collectively inhibit all utterances of the other participants can be obtained. | 07-29-2010 |
Masakasu Katsuno, Tokyo JP
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20110278596 | Epitaxial silicon carbide monocrystalline substrate and method of production of same - The present invention provides an epitaxial SiC monocrystalline substrate having a high quality epitaxial film suppressed in occurrence of step bunching in epitaxial growth using a substrate with an off angle of 6° or less and a method of production of the same, that is, an epitaxial silicon carbide monocrystalline substrate comprised of a silicon carbide monocrystalline substrate with an off angle of 6° or less on which a silicon carbide monocrystalline thin film is formed, the epitaxial silicon carbide monocrystalline substrate characterized in that the silicon carbide monocrystalline thin film has a surface with a surface roughness (Ra value) of 0.5 nm or less and a method of production of the same. | 11-17-2011 |
20150075422 | EPITAXIAL SILICON CARBIDE MONOCRYSTALLINE SUBSTRATE AND METHOD OF PRODUCTION OF SAME - The present invention provides an epitaxial SiC monocrystalline substrate having a high quality epitaxial film suppressed in occurrence of step bunching in epitaxial growth using a substrate with an off angle of 6° or less and a method of production of the same, that is, an epitaxial silicon carbide monocrystalline substrate comprised of a silicon carbide monocrystalline substrate with an off angle of 6° or less on which a silicon carbide monocrystalline thin film is formed, the epitaxial silicon carbide monocrystalline substrate characterized in that the silicon carbide monocrystalline thin film has a surface with a surface roughness (Ra value) of 0.5 nm or less and a method of production of the same. | 03-19-2015 |
Masakazu Katsuno, Chiba JP
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20100083897 | Seed crystal consisting of silicon carbide single crysatal and method for producing ingot using the same - The present invention relates to a seed crystal consisting of a silicon carbide single crystal suitable for producing a substrate (wafer) for an electric power device, a high-frequency device or the like, and a method for producing an ingot using the same. A single crystal growing face of a seed crystal consisting of a silicon carbide single crystal is inclined at an angle ranging from 3 degrees or more to 60 degrees or less with respect to the (11-20) face to a direction inclined at an angle ranging from −45 degrees or more to 45 degrees or less from a <0001> direction to the [1-100] direction. By performing crystal growth using such a seed crystal, a high quality silicon carbide single crystal ingot can be obtained. According to the present invention, it is possible to obtain material consisting of a silicon carbide single crystal of favorable quality, which has few crystal defects such as micropipe defects and stacking faults, and the diameter is suitable for practical application. | 04-08-2010 |
20100089311 | Seed crystal consisting of silicon carbide single crystal and method for producing ingot using the same - The present invention relates to a seed crystal consisting of a silicon carbide single crystal suitable for producing a substrate (wafer) for an electric power device, a high-frequency device or the like, and a method for producing an ingot using the same. A single crystal growing face of a seed crystal consisting of a silicon carbide single crystal is inclined at an angle ranging from 3 degrees or more to 60 degrees or less with respect to the (11-20) face to a direction inclined at an angle ranging from −45 degrees or more to 45 degrees or less from a <0001> direction to the [1-100] direction. By performing crystal growth using such a seed crystal, a high quality silicon carbide single crystal ingot can be obtained. According to the present invention, it is possible to obtain material consisting of a silicon carbide single crystal of favorable quality, which has few crystal defects such as micropipe defects and stacking faults, and the diameter is suitable for practical application. | 04-15-2010 |
Masakazu Katsuno, Chiyoda-Ku JP
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20150267319 | SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND PROCESS FOR PRODUCING SAME - Provided are: a silicon carbide single crystal substrate which is cut out from a silicon carbide bulk single crystal grown by the Physical Vapor Transport method; and a process for producing the same. The number of screw dislocations in one of the semicircle areas of the substrate is smaller than that in the other thereof, namely, the number of screw dislocations in a given area of the substrate is reduced. The semicircle areas of the substrate correspond respectively to the halves of the substrate. The present invention pertains to: a silicon carbide single crystal substrate which is cut out from a silicon carbide bulk single crystal grown by the Physical Vapor Transport method and which is characterized in that the average value of the screw-dislocation densities observed at multiple measurement points in one of the semicircle areas, which correspond respectively to the halves of the substrate, is 80% or less of the average value of screw-dislocation densities observed at multiple measurement points in the other of the semicircle areas; and a process for producing the same. | 09-24-2015 |
Masakazu Katsuno, Tokyo JP
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20090205565 | APPARATUS FOR MANUFACTURING SINGLE-CRYSTAL SILICON CARBIDE - The invention provides an apparatus for manufacturing good quality single-crystal silicon carbide stably without formation of cracks and the like, which apparatus comprises: at least a crucible for accommodating silicon carbide feedstock powder and seed crystal; heat insulation material installed around the crucible; and a heating device for heating the crucible, wherein the outer profile of the crucible includes at least one region of narrower diameter than a vertically adjacent region, insulation material is also installed in the space left by the diameter difference, and thickness of the insulation material at the narrower diameter region is greater than that of the insulation material at the vertically adjacent region. The apparatus for manufacturing single-crystal silicon carbide enables precise control of the temperature gradient inside the crucible, thereby enabling manufacture of good quality single-crystal silicon carbide. | 08-20-2009 |
20100080956 | Low resistivity single crystal silicon carbide wafer - The invention provides a low resistivity silicon carbide single crystal wafer for fabricating semiconductor devices having excellent characteristics. The low resistivity silicon carbide single crystal wafer has a specific volume resistance of 0.001 Ωcm to 0.012 Ωcm and 90% or greater of the entire wafer surface area is covered by an SiC single crystal surface of a roughness (Ra) of 1.0 nm or less. | 04-01-2010 |
20100289033 | SINGLE-CRYSTAL SILICON CARBIDE INGOT, AND SUBSTRATE AND EPITAXIAL WAFER OBTAINED THEREFROM - The present invention provides a single-crystal silicon carbide ingot capable of providing a good-quality substrate low in dislocation defects, and a substrate and epitaxial wafer obtained therefrom. | 11-18-2010 |
20100295059 | SIC SINGLE-CRYSTAL SUBSTRATE AND METHOD OF PRODUCING SIC SINGLE-CRYSTAL SUBSTRATE - The invention provides a high-quality SiC single-crystal substrate, a seed crystal for producing the high-quality SiC single-crystal substrate, and a method of producing the high-quality SiC single-crystal substrate, which enable improvement of device yield and stability. Provided is an SiC single-crystal substrate wherein, when the SiC single-crystal substrate is divided into 5-mm square regions, such regions in which dislocation pairs or dislocation rows having intervals between their dislocation end positions of 5 μm or less are present among the dislocations that have ends at the substrate surface account for 50% or less of all such regions within the substrate surface and the dislocation density in the substrate of dislocations other than the dislocation pairs or dislocation is 8,000/cm | 11-25-2010 |
20110206929 | SINGLE-CRYSTAL SILICON CARBIDE AND SINGLE-CRYSTAL SILICON CARBIDE WAFER - The present invention provides single-crystal silicon carbide and a single-crystal silicon carbide wafer of good-quality that are low in dislocations, micropipes and other crystal defects and enable high yield and high performance when applied to a device, wherein the ratio of doping element concentrations on opposite sides in the direction of crystal growth of the interface between the seed crystal and the grown crystal is 5 or less and the doping element concentration of the grown crystal in the vicinity of the seed crystal is 2×10 | 08-25-2011 |
20110308449 | CRUCIBLE FOR PRODUCING SINGLE-CRYSTAL SILICON CARBIDE, AND PRODUCTION APPARATUS AND PRODUCTION METHOD FOR PRODUCING SINGLE-CRYSTAL SILICON CARBIDE - The present invention, which provides a crucible for producing single-crystal silicon carbide, and a production apparatus and a production method for single-crystal silicon carbide, which are capable of stably growing a single-crystal silicon carbide ingot good in crystallinity at high yield, is a crucible for producing single-crystal silicon carbide having a crucible vessel for holding silicon carbide raw material and a crucible cover for attaching a seed crystal and is adapted to sublimate a silicon carbide raw material in the crucible vessel to supply silicon carbide sublimation gas onto a seed crystal attached to the crucible cover and grow single-crystal silicon carbide on the seed crystal, which crucible for producing single-crystal silicon carbide is provided in the crucible vessel and the crucible cover with threaded portions to be screwed together and is provided with a sublimation gas discharge groove or grooves capable of regulating flow rate by relative rotation of the threaded portions; and is a production apparatus for single-crystal silicon carbide equipped with such a crucible and a production method for single-crystal silicon carbide utilizing this apparatus. | 12-22-2011 |
20130029158 | PROCESS FOR PRODUCING EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE OBTAINED BY THE SAME - Disclosed is a process for producing an epitaxial single-crystal silicon carbide substrate by epitaxially growing a silicon carbide film on a single-crystal silicon carbide substrate by chemical vapor deposition. The step of crystal growth in the process comprises a main crystal growth step, which mainly occupies the period of epitaxial growth, and a secondary crystal growth step, in which the growth temperature is switched between a set growth temperature (T | 01-31-2013 |
20130217213 | PRODUCTION PROCESS OF EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE - An object of the present invention is to provide a production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with a small off-angle. | 08-22-2013 |
20130320357 | EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING SAME - Provided are an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film with less stacking faults on a silicon carbide single crystal substrate and a production method therefor. The epitaxial silicon carbide single crystal substrate is produced by growing a silicon carbide epitaxial layer on a silicon carbide single crystal substrate having an off-angle of 4° or less so that the number of stacking faults emitting light at wavelengths ranging from 400 to 600 nm by photoluminescence on the substrate is less than 10/cm | 12-05-2013 |
20140363607 | SILICON CARBIDE SINGLE CRYSTAL WAFER AND MANUFACTURING METHOD FOR SAME - Provided are a method for manufacturing a SiC single crystal having high crystal quality and, in particular, extremely low screw dislocation density and a SiC single crystal ingot obtained by the method. In particular, provided is a silicon carbide single crystal substrate that is a substrate cut from a bulk silicon carbide single crystal grown by the Physical Vapior Transport (PVT) method, in which the screw dislocation density is smaller in the peripheral region than in the center region, so that screw dislocations are partially reduced. | 12-11-2014 |
Masato Katsuno, Anjo-Shi JP
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20150211405 | FILTER FAULT DETECTION APPARATUS - A filter fault detection apparatus for a filter mounted on an exhaust passage of an internal combustion engine for collecting particulate matter includes a sensor mounted on the exhaust passage downstream of the filter. The sensor includes an insulative sensor element formed with a pair of electrodes on which particulate matter is collected, the sensor generating a sensor output corresponding to an amount of particulate matter collected on the sensor element when the electrodes become electrically conductive therebetween, causing the sensor output to rise. The apparatus further includes an acquiring unit that acquires, as an output variation, a temporal variation of the sensor output after rise of the sensor output, and a fault determination unit that performs a fault detection process for detecting presence of a fault in the filter based on the output variation of the sensor output to determine whether the filter is normal or faulty. | 07-30-2015 |
Masayuki Katsuno, Wako JP
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20120270136 | FUEL CELL - A fuel cell includes an electrolyte electrode assembly, an inner seal member, an outer seal member, a metal separator, and a cell voltage monitor terminal. The electrolyte electrode assembly includes an electrolyte, a pair of electrodes, and a resin frame member. The inner seal member extends around an electrode surface. The outer seal member extends around an outer periphery of the inner seal member. The inner seal member and the outer seal member are disposed on the resin frame member. The cell voltage monitor terminal is embedded in the resin frame member. The cell voltage monitor terminal includes an exposed portion provided between the inner seal member and the outer seal member. The exposed portion is in contact with the metal separator adjacent to the exposed portion. | 10-25-2012 |
Masayuki Katsuno, Yaita-Shi JP
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20150064600 | FUEL CELL ASSEMBLY AND METHOD OF MANUFACTURING SAME, AND BONDING PART MANUFACTURING METHOD AND DEVICE - The present invention relates to a fuel cell assembly and method of manufacturing same, and a bonding part manufacturing method and device. For instance, in a resin frame, a depression part is subsidence formed from a lower-end face toward an upper-end face, and a housing hole is pass-through formed from a top surface of the depression part toward the upper-end face. For instance, the depression part, a cathode-side electrode and an electrolyte film are housed, and in such a circumstance, an anode-side electrode is housed in the housing hole. A portion of the resin frame permeates a gas diffusion layer which configures the anode-side electrode and is a porous body. Via the permeated site, the resin frame and the gas diffusion layer (anode-side electrode) are integrally bonded. | 03-05-2015 |
Motonari Katsuno, Toyama JP
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20140152878 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes a plurality of color filters, which are composed of a plurality of first color filters and a plurality of second color filters. In plan view: the first color filters and the second color filters are arranged alternatively in each of an X direction and a Y direction, and thus form a checkerboard pattern; and each of the first color filters, at a corner portion thereof, (i) has an oblique side that extends diagonally with respect to the X and Y directions, and (ii) is adjacent to another one of the first color filters that is located diagonally therefrom. Each one of the first color filters is partitioned from another one of the first color filters located diagonally therefrom and adjacent thereto at a corner portion by a shift portion of the barrier wall that extends in parallel with the oblique side. | 06-05-2014 |
20140210033 | SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - In a pixel unit of a solid-state imaging device, a semiconductor substrate is provided with a plurality of photodiodes, a first insulating film includes a recess in a portion above each of the photodiodes, a second insulating film embeds the recess, a plurality of color filters is formed on the second insulating film, the color filters each corresponding to one of the photodiodes, a partition is provided between adjacent ones of the color filters, the partition being a part of a third insulating film, and in an area outside of the pixel unit, (i) a conductive film at least partially covered by the third insulating film is formed on the second insulating film, and (ii) the third insulating film formed on the conductive film and on the second insulating film near the conductive film has a film thickness smaller than a film thickness of the partition. | 07-31-2014 |
Ryota Katsuno, Tajimi-Shi JP
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20150320967 | MOUNTING CARD - A mounting card has a sufficient holding force for holding an elongated flexible medical component and prevents deformation and breakage of the flexible medical component when the flexible medical component is pulled out from the proximal end side of the mounting card. The mounting card has a flat surface for holding the elongated flexible medical component. The flat surface comprises a U-shaped distal-side tab and a proximal-side tab that are formed in a pair. Furthermore, a distal-side of the proximal-side tab is parallel with a proximal-side of the distal-side tab, and a distance between the distal side of the proximal-side tab and the proximal side of the distal-side tab is larger than the diameter of the flexible medical component. | 11-12-2015 |
Satoshi Katsuno, Mie JP
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20150322250 | PROPYLENE-ETHYLENE COPOLYMER RESIN COMPOSITION AND MOULDED ARTICLE, FILM AND SHEET THEREOF - A propylene-ethylene copolymer resin composition including: 97 to 65 parts by weight of a propylene polymer (A) produced with a metallocene catalyst and 3 to 35 parts by weight of a propylene-ethylene copolymer (B). The copolymer (B) includes: 65 to 95% by weight of a propylene polymer component (B1) and 5 to 35% by weight of a propylene-ethylene copolymer component (B2). | 11-12-2015 |
Takafumi Katsuno, Kyoto JP
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20130215200 | FINE WIRING PATTERN, MANUFACTURING METHOD THEREOF, AND THERMAL PRINT HEAD - According to the present disclosure, a manufacturing method of a fine wiring pattern is disclosed. The manufacturing method includes preparing a support member, forming a first layer on the support member by thick-film printing, and forming a second layer including Ag on the first layer by the thick-film printing. The method also includes forming a predetermined fine wiring pattern by performing an etching process upon the first layer and the second layer. | 08-22-2013 |
20150138298 | FINE WIRING PATTERN, MANUFACTURING METHOD THEREOF, AND THERMAL PRINT HEAD - According to the present disclosure, a manufacturing method of a fine wiring pattern is disclosed. The manufacturing method includes preparing a support member, forming a first layer on the support member by thick-film printing, and forming a second layer including Ag on the first layer by the thick-film printing. The method also includes forming a predetermined fine wiring pattern by performing an etching process upon the first layer and the second layer. | 05-21-2015 |
Takashi Katsuno, Ichinomiya-City JP
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20090230405 | Diode having Schottky junction and PN junction and method for manufacturing the same - A manufacturing method of a diode includes: forming a P type semiconductor film on a N type semiconductor layer with a crystal growth method; forming a first metallic film on the P type semiconductor film so that the first metallic film contacts the P type semiconductor film with an ohmic contact; forming a mask having an opening on the first metallic film; etching a part of the first metallic film and a part of the P type semiconductor film via the opening so that a part of the N type semiconductor layer is exposed; and forming a second metallic film on the part of the N type semiconductor layer so that the second metallic film contacts the N type semiconductor layer with a Schottky contact. | 09-17-2009 |
Takashi Katsuno, Ichinomiya-Shi JP
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20090269908 | Manufacturing method of a semiconductor device - A manufacturing method of a semiconductor device comprises a process of doping conductive impurities in a silicon carbide substrate, a process of forming a cap layer on a surface of the silicon carbide substrate, a process of activating the conductive impurities doped in the silicon carbide substrate, a process of oxidizing the cap layer after a first annealing process, and a process of removing the oxidized cap layer. It is preferred that the cap layer is formed from material that includes metal carbide. Since the oxidation onset temperature of metal carbide is comparatively low, the oxidization of the cap layer becomes easy if metal carbide is included in the cap layer. Specifically, it is preferred that the cap layer is formed from metal carbide that has an oxidation onset temperature of 1000 degrees Celsius or below, such as tantalum carbide. | 10-29-2009 |
Takashi Katsuno, Nisshin-City JP
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20100032730 | Semiconductor device and method of making the same - A method of making a semiconductor device includes forming a p-type semiconductor region to an n-type semiconductor substrate in such a manner that the p-type semiconductor region is partially exposed to a top surface of the semiconductor substrate, forming a Schottky electrode of a first material in such a manner that the Schottky electrode is in Schottky contact with an n-type semiconductor region exposed to the top surface of the semiconductor substrate, and forming an ohmic electrode of a second material different from the first material in such a manner that the ohmic electrode is in ohmic contact with the exposed p-type semiconductor region. The Schottky electrode is formed earlier than the ohmic electrode. | 02-11-2010 |
20100244049 | Silicon carbide semiconductor device with schottky barrier diode and method of manufacturing the same - A silicon carbide semiconductor device with a Schottky barrier diode includes a first conductivity type silicon carbide substrate, a first conductivity type silicon carbide drift layer on a first surface of the substrate, a Schottky electrode forming a Schottky contact with the drift layer, and an ohmic electrode on a second surface of the substrate. The Schottky electrode includes an oxide layer in direct contact with the drift layer. The oxide layer is made of an oxide of molybdenum, titanium, nickel, or an alloy of at least two of these elements. | 09-30-2010 |
20110204383 | SIC SEMICONDUCTOR DEVICE HAVING SCHOTTKY BARRIER DIODE AND METHOD FOR MANUFACTURING THE SAME - A SiC semiconductor device having a Schottky barrier diode includes: a substrate made of SiC and having a first conductive type, wherein the substrate includes a main surface and a rear surface; a drift layer made of SiC and having the first conductive type, wherein the drift layer is disposed on the main surface of the substrate and has an impurity concentration lower than the substrate; a Schottky electrode disposed on the drift layer and has a Schottky contact with a surface of the drift layer; and an ohmic electrode disposed on the rear surface of the substrate. The Schottky electrode directly contacts the drift layer in such a manner that a lattice of the Schottky electrode is matched with a lattice of the drift layer. | 08-25-2011 |
Takashi Katsuno, Nisshin-Shi JP
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20110207321 | SEMICONDUCTOR DEVICE MANUFACTURIING METHOD - A method for manufacturing a semiconductor device including a semiconductor substrate composed of silicon carbide, an upper surface electrode which contacts an upper surface of the substrate, and a lower surface electrode which contacts a lower surface of the substrate, the method including steps of: (a) forming an upper surface structure on the upper surface side of the substrate, and (b) forming a lower surface structure on the lower surface side of the substrate. The step (a) comprises steps of: (a1) depositing an upper surface electrode material layer on the upper surface of the substrate, the upper surface electrode material layer being a raw material layer of the upper surface electrode, and (a2) annealing the upper surface electrode material layer. The step (b) comprises steps of: (b1) depositing a lower surface electrode material layer on the lower surface of the substrate, the lower surface electrode material layer being a raw material layer of the lower surface electrode, and (b2) annealing the lower surface electrode material layer with a laser to make an ohmic contact between the lower surface electrode and the substrate. | 08-25-2011 |
Takashi Katsuno, Aichi-Gun JP
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20110151654 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - First, a first layer made of Ni or an alloy including Ni may be formed on an upper surface of a semiconductor layer. Next, a second layer made of silicon oxide may be formed on an upper surface of the first layer. Next, a part, which corresponds to a semiconductor region, of the second layer may be removed. Next, second conductive type ion impurities may be injected from upper sides of the first and second layers to the semiconductor layer after the removing step. | 06-23-2011 |
Takuya Katsuno, Nagoya-City JP
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20110012049 | METHOD FOR PRODUCING CRYSTALLOGRAPHICALLY ORIENTED CERAMIC - A method for producing a crystallographically oriented ceramic according to the present invention includes a preparation step of preparing a template layer having uniform crystal orientation in a predetermined direction, a formation step of forming a shaped body including a matrix layer arranged on the template layer, the matrix layer being composed of a mixed material that contains a lead-containing material and an additional material containing lithium and boron, and a firing step of firing the shaped body formed in the formation step at a predetermined firing temperature. Furthermore, after the firing step, a post-annealing step of heating the shaped body to remove lithium and boron may be included. | 01-20-2011 |
20110014362 | METHOD FOR PRODUCING CRYSTALLINE PARTICLES AND METHOD FOR PRODUCING CRYSTALLOGRAPHICALLY ORIENTED CERAMIC - A method for producing crystalline particles according to the present invention includes a mixing step of producing a mixed material containing a lead-containing material and an additional material containing lithium and boron and a first firing step of firing the mixed material at a predetermined firing temperature to form polyhedral crystalline particles. It is possible to produce a crystallographically oriented ceramic by preparing a template layer having uniform crystal orientation in a predetermined direction by fixing the crystalline particles on a substrate, forming a shaped body including a matrix layer arranged on the template layer, the matrix layer being composed of a mixed material that contains a lead-containing material and an additional material containing lithium and boron, and firing the shaped body. | 01-20-2011 |
20110241479 | CERAMIC, AND PIEZOELECTRIC/ELECTROSTRICTION ELEMENT - A ceramic having a plurality of crystal grains that contain lithium and boron, the crystal grains are arranged in a planar direction, and the crystal grains have a mutually same crystal orientation with respect to the thickness direction, | 10-06-2011 |
20110241493 | CERAMIC, AND PIEZOELECTRIC/ELECTROSTRICTION ELEMENT - A ceramic having a plurality of crystal grains that contain lead, lithium, and boron, are arranged in a planar direction, and have a mutually same crystal orientation with respect to the thickness direction. | 10-06-2011 |
20110291530 | CRYSTAL ORIENTED CERAMIC COMPOSITE BODY, AND PIEZOELECTRIC/ELECTROSTRICTIVE ELEMENT - A crystal oriented ceramic composite body including a substrate that has a first surface and a second surface, and a {100} oriented ceramic film that is disposed to face the first surface. The {100} oriented ceramic film includes a first sectional surface. The first sectional surface is perpendicular to the first surface, and a 90 degree domain includes a domain wall within a range of ±20 degrees of a normal to the first surface and occupies a surface area of at least ⅓ of the first sectional surface. | 12-01-2011 |
Tomoaki Katsuno, Toyota-Shi JP
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20140231552 | COATING NOZZLE FOR HIGH-VISCOSITY PAINT - A coating nozzle for high-viscosity paint includes a nozzle slit. The nozzle slit exhibits a specific reduced slit angle, and includes a nozzle-slit outlet, and a nozzle-slit inlet. The nozzle-slit outlet is formed as a distinct substantially-arced shape elongating lopsidedly from the nozzle-slit inlet to the nozzle-slit outlet. The coating nozzle including the nozzle slit can optimize a shear velocity of high-viscosity paint for a discharge rate of the high-viscosity paint in a setting of the actual employment. | 08-21-2014 |
Toshiyasu Katsuno, Nagoya-Shi JP
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20100208075 | SURROUNDINGS MONITORING DEVICE FOR VEHICLE - A surroundings monitoring device for a vehicle, including: an image acquisition unit that acquires an image of vehicle surroundings; an obstacle recognition unit that recognizes an obstacle in the image acquired by the image acquisition unit, calculates a position of the obstacle, and calculates a detection reliability indicating accuracy of recognition of the obstacle; a risk degree calculation unit that calculates a risk degree that indicates a degree of risk of a collision between the obstacle and the vehicle; and an attention drawing unit that outputs an attention drawing signal for drawing a driver's attention on the basis of the detection reliability and the risk degree. | 08-19-2010 |
20130175926 | ON-VEHICLE LIGHT DISTRIBUTION CONTROL SYSTEM - An on-vehicle light distribution control system ( | 07-11-2013 |
Yasuharu Katsuno, Chigasaki JP
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20130185413 | Integrated Metering of Service Usage for Hybrid Clouds - An embodiment is directed to a hybrid cloud environment wherein a user of cloud computing services is disposed to consume cloud provided services delivered by each of a plurality of cloud computing service providers. Specified event data is received at an MCS component, wherein the event data pertains to metering events related to consumed services delivered by one or more cloud service providers. Event data includes event data furnished by one or more entities that actively monitor metering events at one or more local or remote cloud service provider locations. Event data is sent from the MCS component to a metering system, and the metering system generates reports from the event data that contains usage information on services provided by one or more cloud service providers, wherein information for a provider specifies amounts and quality of each type of service delivered to users by the provider. | 07-18-2013 |
Yasuharu Katsuno, Kanagawa-Ken JP
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20150200841 | METHOD AND APPARATUS FOR CONNECTING AN INFORMATION PROCESSOR TO MULTIPLE NETWORKS - A method and apparatus for connecting an information processor to any network to perform communications are disclosed. A setting information indicating network settings to be set for an information processor when performing communications via a network is stored. A route setting packet, which is sent by a network device connected to the network to which the information processor is connected, is acquired to set a route to be used by the network device to communicate with another device. A device identification information for identifying a network device from which the route setting packet was sent is extracted from the route setting packet. The information processor is allowed to perform communications by acquiring the setting information associated with the extracted device identification information, and the information is specifically set for the information processor. | 07-16-2015 |
Yasuharu Katsuno, Tokyo JP
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20140074453 | COMPUTER IMPLEMENTED METHOD, PROGRAM, AND SYSTEM FOR IDENTIFYING NON-TEXT ELEMENT SUITABLE FOR COMMUNICATION IN MULTI-LANGUAGE ENVIRONMENT - A computer implemented method, a program, and a system for effectively providing versatile non-text information suitable for use in a multi-language environment. The method includes the steps of: receiving search results of a database using a search criterion in a certain language and a search criterion in another language corresponding to the search criterion in which specific language attributes are associated with non-text elements that are included in the search results; scoring the non-text elements included in the search results depending on a similarity to another element with which a different language attribute is associated; and identifying at least one of the non-text elements included in the search results on the basis of the scores. | 03-13-2014 |
20140129297 | DETERMINING CALCULATION EXPRESSION FOR FINDING KPI RELATING TO BUSINESS PROCESS - A computer-implemented method is disclosed for determining a calculation expression for finding a KPI relating to a business process (process KPI) on the basis of a KPI obtained in each task (task KPI), the business process being representable as a graph structure including a plurality of tasks and edges representing how processing of the tasks proceeds. The method includes preparing a table defining a group of composite operation expressions for the task KPIs of the plurality of tasks, the composite operation expressions being associated with a predetermined relation of the plurality of tasks for each task KPI type; determining composite operation expressions for the task KPIs over the business process for each task KPI type by referring to the table; and creating a calculation expression for finding the process KPI of the business process using the composite operation expressions for the task KPIs over the business process. | 05-08-2014 |
Yasuharu Katsuno, Kawasaki-Shi JP
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20130332609 | NETWORK COMPUTING OVER MULTIPLE RESOURCE CENTERS - A system for network computing includes a plurality of resource centers, each of the plurality of resource centers comprising one or more resource instances. The system also includes a resource manager that accesses a resource instance based on a user request, and a resource broker that facilitates communication between the resource manager and a respective resource center of the resource instance. | 12-12-2013 |
20130332611 | NETWORK COMPUTING OVER MULTIPLE RESOURCE CENTERS - A system for network computing includes a plurality of resource centers, each of the plurality of resource centers comprising one or more resource instances. The system also includes a resource manager that accesses a resource instance based on a user request, and a resource broker that facilitates communication between the resource manager and a respective resource center of the resource instance. | 12-12-2013 |
Yoshiaki Katsuno, Fujisawa-Shi JP
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20140193111 | CAGE AND ROLLING BEARING | 07-10-2014 |
20140363112 | ROLLING BEARING - Retained austenite amounts of surface layer parts of an inner ring and an outer ring are set at more than 0% by volume. A ball (rolling element) is obtained by processing a raw material including alloy steel in which an Si content is 0.3 to 2.2% by weight and an Mn content is 0.3 to 2.0% by weight and Si/Mn is 5 or less (by mass) and then performing thermal treatment including carbonitriding or nitriding. Si.Mn nitride including nitride of silicon (Si) and nitride of manganese (Mn) is present in a rolling surface of the ball in a range of 1.0 to 20.0% by area. An N content of a surface layer part of the ball is 0.2 to 2.0% by weight, and a retained austenite amount is 0 (exclusive) to 50% (inclusive) by volume and the following formula (1) is satisfied. | 12-11-2014 |
Yoshiaki Katsuno, Kanagawa JP
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20090131235 | Ball Bearing for Spindle Turning Device of Machine Tool and Spindle Turning Device of Machine Tool Using the Same - A ball bearing for spindle turning device for use in the spindle turning device of a machine tool, and a spindle turning device for a machine tool using the same, which is compatible with machine tools whose recent trend is for more composite configurations while maintaining and achieving higher accuracy (higher rotational accuracy), greater stiffness and reductions in torque and heat generation is to be provided. In a ball bearing for spindle turning device for use in the spindle turning device of a machine tool, the sectional size ratio (B/H) between the axially cut sectional width B and the radially cut sectional height H is set to be (B/H)<0.63 where it is a single row ball bearing or the sectional size ratio (B | 05-21-2009 |
20130004107 | MULTIPLE ROW COMBINATION BALL BEARING - A multiple row combination ball bearing 10 includes at least two rows of ball bearings 11A and 11B. A counterbore 12 | 01-03-2013 |
Yoshiyuki Katsuno, Tokyo JP
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20110045330 | METHOD FOR PREVENTING ERRONEOUS LOADING OF COMPONENT-TO-BE-LOADED ON MAIN BODY SIDE APPARATUS, COMPONENT-TO-BE-LOADED AND BATTERY PACK - In case a similar component-to-be-loaded is erroneously loaded on a main body side apparatus, contact of terminals are avoided. To this end, a video camera (main body side apparatus) | 02-24-2011 |
20110244288 | METHOD FOR PREVENTING ERRONEOUS LOADING OF COMPONENT-TO-BE-LOADED ON MAIN BODY SIDE APPARATUS, COMPONENT-TO-BE-LOADED AND BATTERY PACK - In case a similar component-to-be-loaded is erroneously loaded on a main body side apparatus, contact of terminals are avoided. To this end, a video camera (main body side apparatus) | 10-06-2011 |
20120040220 | METHOD FOR PREVENTING ERRONEOUS LOADING OF COMPONENT-TO-BE-LOADED ON MAIN BODY SIDE APPARATUS, COMPONENT-TO-BE-LOADED AND BATTERY PACK - A battery device to be loaded on an electronic apparatus comprises a casing configured to house at least one battery cell therein and having upper and lower surfaces, first and second longitudinal side surfaces disposed between the upper and lower surfaces, and an end wall disposed between the upper and lower surfaces and also disposed between the first and second longitudinal side surfaces. A step is disposed in the end wall and a storage element is disposed in the step to receive an electric contact portion, the step extending to the first longitudinal side surface, and the end wall extends from the second longitudinal side surface to the step and projects beyond the step. | 02-16-2012 |
20120270086 | METHOD FOR PREVENTING ERRONEOUS LOADING OF COMPONENT-TO-BE-LOADED ON MAIN BODY SIDE APPARATUS, COMPONENT-TO-BE-LOADED AND BATTERY PACK - A battery apparatus of the type having a length, a width and a height, top and bottom surfaces substantially perpendicular to the height direction. First and second side surfaces, that include curved surfaces, are disposed between the top and bottom surfaces, and front and rear end portions are disposed between the top and bottom surfaces and also disposed between the first and second side surfaces. A plurality of electric contact portions are exposed through terminal windows; and a battery cell is electrically connected to at least one of the electric contact portions. The front end portion includes first and second level surfaces, with the second level surface being lower than the first level surface; and wherein the terminal windows are disposed in the second level surface. | 10-25-2012 |
20120295152 | METHOD FOR PREVENTING ERRONEOUS LOADING OF COMPONENT-TO-BE-LOADED ON MAIN BODY SIDE APPARATUS, COMPONENT-TO-BE-LOADED AND BATTERY PACK - A battery apparatus of the type having a length, a width and a height, top and bottom surfaces substantially perpendicular to the height direction. First and second side surfaces, that include curved surfaces, are disposed between the top and bottom surfaces, and front and rear end portions are disposed between the top and bottom surfaces and also disposed between the first and second side surfaces. A plurality of electric contact portions are exposed through terminal windows; and a battery cell is electrically connected to at least one of the electric contact portions. The front end portion includes first and second level surfaces, with the second level surface being lower than the first level surface; and wherein the terminal windows are disposed in the second level surface. | 11-22-2012 |
20130183567 | METHOD FOR PREVENTING ERRONEOUS LOADING OF COMPONENT-TO-BE-LOADED ON MAIN BODY SIDE APPARATUS, COMPONENT-TO-BE-LOADED AND BATTERY PACK - In case a similar component-to-be-loaded is erroneously loaded on a main body side apparatus, contact of terminals are avoided. To this end, a video camera (main body side apparatus) | 07-18-2013 |
20140322592 | METHOD FOR PREVENTING ERRONEOUS LOADING OF COMPONENT-TO-BE-LOADED ON MAIN BODY SIDE APPARATUS, COMPONENT-TO-BE-LOADED AND BATTERY PACK - In case a similar component-to-be-loaded is erroneously loaded on a main body side apparatus, contact of terminals are avoided. To this end, a video camera (main body side apparatus) | 10-30-2014 |
20150243959 | METHOD FOR PREVENTING ERRONEOUS LOADING OF COMPONENT-TO-BE-LOADED ON MAIN BODY SIDE APPARATUS, COMPONENT-TO-BE-LOADED AND BATTERY PACK - A battery of the type having a length, a width, a thickness, a top and bottom and sides. Three electric terminals are separated by ribs, with a third rib spaced from the other two, and with the first rib being wider than the third rib. The top has concave portions separated from each other, disposed at respective sides of the battery and each opening to outside the battery. | 08-27-2015 |
Yusuke Katsuno, Kariya-Shi JP
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20150328959 | AIR-CONDITIONING REGISTER - First and second upstream fins and first and second downstream fins are arranged in the air passage of air-conditioning air to pivot. The first upstream fin includes an upstream body with a cutout extending upstream from the downstream edge. A transmission shaft, which extends along upstream fin shafts, is arranged in the cutout. The first downstream fin includes a downstream body with a slidable operation knob. The operation knob includes a fork that is rotationally supported with a support shaft. The fork includes a pair of transmission pieces, which extends upstream from the operation knob and sandwiches the transmission shaft. The transmission shaft includes a pair of stoppers, which is located at positions that are spaced from each other in the extending direction of the transmission shaft and that sandwich the transmission pieces. The stoppers are caused to contact the transmission pieces by operation of the operation knob. | 11-19-2015 |
Yutaka Katsuno, Hiroshima JP
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20090045131 | Blood Filter Device and Method of Manufacturing the Same - A blood filter device includes: a housing that includes a dome | 02-19-2009 |
20100179465 | Blood Filter Device and Method of Producing the Same - A blood filter device has a housing that includes: a head portion ( | 07-15-2010 |
20110098626 | BLOOD RESERVOIR - A cardiotomy section ( | 04-28-2011 |
20110118648 | BLOOD RESERVOIR - A conduit tube ( | 05-19-2011 |
Yutaka Katsuno, Aki-Gun JP
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20100163163 | BLOOD FILTER DEVICE AND METHOD OF PRODUCING THE SAME - A blood filter device includes: a housing ( | 07-01-2010 |
Zentaro Katsuno, Wako JP
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20140291960 | SADDLE-RIDE VEHICLE - A saddle-ride vehicle includes a steering shaft, a head pipe, a main frame, a top bridge and a bottom bridge, an upper end bearing and a lower end bearing, a potentiometer, a bracket, and a thread nut. The steering shaft has a shaft axis. The head pipe supports the steering shaft to be rotatable around the shaft axis. The main frame extends from the head pipe toward a rear side of a vehicle body. The top bridge and the bottom bridge are fixed to upper and lower ends of the steering shaft, respectively. The upper end bearing and the lower end bearing are provided inside the head pipe at upper and lower ends of the head pipe, respectively to support the steering shaft rotatably. The potentiometer includes a cable and is configured to output an electric signal in accordance with a pullout amount of the cable. | 10-02-2014 |
Zentaro Katsuno, Saitama JP
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20120061159 | VEHICLE, AND HARNESS WIRING STRUCTURE THEREFOR - In a harness wiring structure, a covering member which covers electric wires has a mesh-like portion | 03-15-2012 |