Katsuhiko Yamamoto
Katsuhiko Yamamoto, Tachikawa-Shi JP
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20100156876 | LIQUID CRYSTAL DISPLAY CONTROLLER AND LIQUID CRYSTAL DISPLAY DEVICE - In conventional liquid crystal display controllers such as for portable telephone sets, the display is reduced in the stand-by state but the liquid crystal display duty is not changed, i.e., even the common electrodes of the rows that are not producing display are scanned, and the consumption of electric power is not decreased to a sufficient degree in the stand-by state. A liquid crystal display controller ( | 06-24-2010 |
Katsuhiko Yamamoto, Himi-Shi JP
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20100123183 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A technique capable of improving the memory retention characteristics of a non-volatile memory is provided. In particular, a technique of fabricating a non-volatile semiconductor memory device is provided capable of enhancing the film quality of a silicon oxide film even when a silicon oxide film as a first potential barrier film is formed with a plasma oxidation method to improve the memory retention characteristics of the non-volatile memory. After a silicon oxide film, which is a main component of a first potential barrier film, is formed with a plasma oxidation method, plasma nitridation at a high temperature and a heat treatment in an atmosphere containing nitric oxide are performed in combination, thereby forming a silicon oxynitride film on the surface of the silicon oxide film, and segregating nitrogen to an interface between the silicon oxide film and a semiconductor substrate. | 05-20-2010 |
20120280369 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND SEMICONDUCTOR DEVICE - There is provided a method for manufacturing a semiconductor device, comprising simultaneously or alternately exposing a substrate, which has two or more kinds of thin films having different elemental components laminated or exposed; and performing different modification treatments to the thin films respectively. | 11-08-2012 |
Katsuhiko Yamamoto, Toyama JP
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20080245303 | MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS - The manufacturing method of a semiconductor apparatus has a step for carrying in the substrate into the processing chamber; a step for heating the processing chamber and the substrate to the predetermined temperature; and a gas supply and exhaust step for supplying and exhausting desired gas into and from the processing chamber, wherein the gas supply and exhaust step repeats by the predetermined times a first supply step for supplying silicon-type gas and hydrogen gas into the processing chamber; a first exhaust step for exhausting at least said silicon-type gas from the processing chamber; a second supply step for supplying chlorine gas and hydrogen gas into the processing chamber; and a second exhaust step for exhausting at least the chlorine gas from the processing chamber. | 10-09-2008 |
20090050056 | SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR MANUFACTURING METHOD THEREOF - A substrate processing apparatus and a substrate manufacturing method using the substrate processing apparatus which manufactures, with a high production efficiency, a semiconductor having superior electric characteristics in the nitridation process of a gate insulating film are disclosed. The substrate processing apparatus for the substrate manufacturing method includes a processing chamber which processes the substrate, a processing chamber which generates the plasma, a heating unit which heats the substrate, a gas supply source, and a control unit which executes a first process which converts a nitrogen-containing gas supplied to the processing chamber into the plasma by the processing chamber and heats the substrate by the heating unit, and a second process which stops the plasma generation and heating the substrate further at the temperature of not lower than 450° C. by the heating unit. | 02-26-2009 |
20120312235 | MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS - The manufacturing method of a semiconductor apparatus has a step for carrying in the substrate into the processing chamber; a step for heating the processing chamber and the substrate to the predetermined temperature; and a gas supply and exhaust step for supplying and exhausting desired gas into and from the processing chamber, wherein the gas supply and exhaust step repeats by the predetermined times a first supply step for supplying silicon-type gas and hydrogen gas into the processing chamber; a first exhaust step for exhausting at least said silicon-type gas from the processing chamber; a second supply step for supplying chlorine gas and hydrogen gas into the processing chamber; and a second exhaust step for exhausting at least the chlorine gas from the processing chamber. | 12-13-2012 |
Katsuhiko Yamamoto, Otsu-Shi JP
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20090029416 | HYPERTHERMOSTABLE PROTEASE GENE - There are provided hyperthermostable proteases having an amino acid sequences represented by SEQ ID Nos. 1, 3 and 5 of the Sequence Listing or functional equivalents thereof and hyperthermostable protease genes encoding those hyperthermostable protease. There is also disclosed a process for preparation of a hyperthermostable protease by culturing a transformant containing the gene. | 01-29-2009 |
Katsuhiko Yamamoto, Toyama-Shi JP
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20080199610 | Substrate processing apparatus, and substrate processing method - To move a substrate mounting part, on which substrates are stacked and mounted, when processing gas is supplied into a processing chamber and processing is applied to a surface of each substrate. | 08-21-2008 |
20110212623 | Substrate treatment device - It is intended to provide a substrate treatment device capable of adjusting both of a growth speed and an etching speed in a selective epitaxial growth, avoiding particle generation from nozzles, and achieving good etching characteristics. A substrate treatment device for selectively growing an epitaxial film on a surface of a substrate by alternately supplying a raw material gas containing silicon and an etching gas to a treatment chamber, the substrate treatment device being provided with a substrate support member for supporting the substrate in the treatment chamber, a heating member provided outside the treatment chamber for heating the substrate and an atmosphere of the treatment chamber, a gas supply system provided inside the treatment chamber, and a discharge port opened on the treatment chamber, wherein the gas supply system comprises first gas supply nozzles for supplying the raw material gas and second gas supply nozzles for supplying the etching gas. | 09-01-2011 |
20120086107 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE - A semiconductor device manufacturing method includes loading a substrate, on which a high-k film is formed, into a processing chamber, performing a reforming process by heating the high-k film through irradiation of a microwave on the substrate, and unloading the substrate from the processing chamber. | 04-12-2012 |
20130078823 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - A method of manufacturing a semiconductor device including: mounting a substrate on a substrate mounting member that is disposed in a reaction container; heating the substrate at a predetermined processing temperature and supplying a first gas and a second gas to the substrate to process the substrate; stopping supply of the first gas and the second gas, and supplying an inert gas into the reaction container; and unloading the substrate to outside the reaction container. | 03-28-2013 |
Katsuhiko Yamamoto, Kanagawa JP
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20120256816 | LIQUID CRYSTAL DISPLAY CONTROLLER AND LIQUID CRYSTAL DISPLAY DEVICE - In conventional liquid crystal display controllers, the display is reduced in the stand-by state but the liquid crystal display duty is not changed, i.e., even the common electrodes of the rows that are not producing display are scanned, and the consumption of electric power is not decreased to a sufficient degree in the stand-by state. A liquid crystal display controller includes a drive duty selection register capable of being rewritten by a microprocessor, and a drive bias selection register. When the display is changed from the whole display on a liquid crystal display panel to a partial display on part of the rows only, the preset values of the drive duty selection register and of the drive bias selection register are changed, so that the display is selectively produced on a portion of the liquid crystal display panel at a low voltage with a low-duty drive. | 10-11-2012 |
20140113932 | CRYSTAL OF FUSED HETEROCYCLIC COMPOUND - The present invention relates to a crystal of 1-ethyl-7-methyl-3-{4-[(3-methyl-3H-imidazo[4,5-b]pyridin-2-yl)oxy]phenyl}-1,3-dihydro-2H-imidazo[4,5-b]pyridin-2-one useful as a prophylactic or therapeutic agent for schizophrenia and the like, which shows an X-ray powder diffraction pattern having characteristic peaks at interplaner spacings (d) of 13.59 plus or minus 0.2 and 6.76 plus or minus 0.2 Angstroms in powder X-ray diffraction. | 04-24-2014 |
Katsuhiko Yamamoto, Tokyo JP
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20130293796 | LIQUID CRYSTAL DISPLAY CONTROLLER AND LIQUID CRYSTAL DISPLAY DEVICE - In conventional liquid crystal display controllers, the display is reduced in the stand-by state but the liquid crystal display duty is not changed, i.e., even the common electrodes of the rows that are not producing display are scanned, and the consumption of electric power is not decreased to a sufficient degree in the stand-by state. A liquid crystal display controller includes a drive duty selection register capable of being rewritten by a microprocessor, and a drive bias selection register. When the display is changed from the whole display on a liquid crystal display panel to a partial display on part of the rows only, the preset values of the drive duty selection register and of the drive bias selection register are changed, so that the display is selectively produced on a portion of the liquid crystal display panel at a low voltage with a low-duty drive. | 11-07-2013 |