Patent application number | Description | Published |
20120235722 | SEMICONDUCTOR INTEGRATED CIRCUIT - A semiconductor integrated circuit according to an embodiment includes a clock signal generation section, a clock waveform shaping section and a plurality of function blocks. The clock signal generation section generates a clock signal of a predetermined frequency. The clock waveform shaping section generates a plurality of clock signals having the same phase as a phase of the clock signal generated by the clock signal generation section at rising edges and different phases at falling edges. Each of the plurality of function blocks has a plurality of flip flops that operate with any one of the plurality of clock signals generated by the clock waveform shaping section. | 09-20-2012 |
20130014268 | STORAGE DEVICE AND STORAGE METHOD - According to one embodiment, a storage device includes a connector configured to be connected to an equipment; a wireless communication unit configured to transmit and receive data through wireless communication; an identification unit configured to identify the equipment connected to the connector; a storage unit configured to include, for each identified equipment, a restricted area accessible only by the identified equipment; and a controller configured to control the storage unit such that the data, which is received by the wireless communication unit when the equipment is connected to the connector, is written in the restricted area for the connected equipment. | 01-10-2013 |
20130015913 | ELECTRONIC APPARATUSAANM HORIKAWA; SeiichiroAACI KanagawaAACO JPAAGP HORIKAWA; Seiichiro Kanagawa JPAANM Akita; KojiAACI KanagawaAACO JPAAGP Akita; Koji Kanagawa JPAANM Kasami; HideoAACI KanagawaAACO JPAAGP Kasami; Hideo Kanagawa JP - In an embodiment, an electronic apparatus is mounted with a card unit including first and second devices driven with different driving voltages. The electronic apparatus includes: first and second voltage generating units, first and second control units. The first voltage generating unit generates a first driving voltage for driving the first device and a second driving voltage for driving the second device using electric power from the battery. The second voltage generating unit generates the first driving voltage and second driving voltage using electric power transmitted from the external device. The first control unit controls the first selection unit such that any one of the first driving voltage generated by the first voltage generating unit and the first driving voltage generated by the second voltage generating unit is selected depending on the electric power supply capability of the battery. | 01-17-2013 |
20130015948 | CARD DEVICEAANM AKITA; KojiAACI KanagawaAACO JPAAGP AKITA; Koji Kanagawa JPAANM HORIKAWA; SeiichiroAACI KanagawaAACO JPAAGP HORIKAWA; Seiichiro Kanagawa JPAANM KASAMI; HideoAACI KanagawaAACO JPAAGP KASAMI; Hideo Kanagawa JP - According to one embodiment, a card device includes an authentication unit, a wireless communication unit, and a control unit. The authentication unit performs an authentication process with an external device via wired communication. The wireless communication unit performs wireless communication with the external device. The control unit controls the wireless communication unit to reduce radio waves radiated from the wireless communication unit when the control unit detects that the authentication process is being performed. | 01-17-2013 |
20130016017 | CARD DEVICEAANM AKITA; KojiAACI KanagawaAACO JPAAGP AKITA; Koji Kanagawa JPAANM Horikawa; SeiichiroAACI KanagawaAACO JPAAGP Horikawa; Seiichiro Kanagawa JPAANM Kasami; HideoAACI KanagawaAACO JPAAGP Kasami; Hideo Kanagawa JP - According to an embodiment, a card device connected to a device includes a wireless communication unit configured to make wireless communication. The wireless communication unit includes an antenna configured to be arranged therein as being apart from at least one of side faces of the card device by a distance corresponding to not less than a wavelength of a wireless signal that is emitted from the wireless communication unit. | 01-17-2013 |
20150350909 | CARD DEVICE - A card devices includes an authentication unit, a wireless communication unit, and a control unit. The authentication unit performs and authentication process with an external device via wired communication. The wireless communication unit performs wireless communication with the external device. The control unit controls the wireless communication unit to reduce radio waves radiated from the wireless communication unit when the control unit detects that the authentication process is being performed. | 12-03-2015 |
Patent application number | Description | Published |
20100117649 | MAGNETIC RESONANCE IMAGING APPARATUS - An apparatus including a probe unit and a control/imaging unit, the probe unit including a converter converting a sampled magnetic-resonance signal into a digital signal, a first transmitter converting the digital signal into a first-radio signal, a first receiver receiving a second-radio signal, and performing detection on the second-radio signal to obtain a first-received signal, and a clock-regeneration unit regenerating a clock component from the first-received signal to generate a regenerated-clock signal, the control/imaging unit including a second-receiver receiving the first-radio signal to obtain a second-received signal, a data processor performing data processing on the second-received signal in synchronism with a reference-clock signal to obtain a video signal, and a second transmitter including a modulator modulating a carrier wave using the reference-clock signal, the second transmitter converting the reference-clock signal into the second-radio signal and transmitting the second-radio signal through the second-wireless channel. | 05-13-2010 |
20120195296 | WIRELESS COMMUNICATION APPARATUS - According to embodiments, a wireless communication apparatus supports at least a second wireless communication scheme between a first, wireless communication scheme and the second wireless communication scheme. The first wireless communication scheme requires that a wireless medium is determined to be busy when a reception level is equal to or greater than a minimum reception sensitivity level of physical scheme. The apparatus includes a first processing unit and a second processing unit. The first processing unit is configured to set a value lower than a maximum transmission power of the first wireless communication scheme, for a maximum transmission power of the second wireless communication scheme and set a value greater than the minimum reception sensitivity level, of the physical scheme, for a carrier sense level, when the second wireless communication scheme is used. The second processing unit is configured to carry out carrier sense using the carrier sense level. | 08-02-2012 |
20120235878 | RADIO DEVICE - There is provided a radio device including an antenna, a first impedance converting circuit, a second impedance converting circuit and a differential output unit. The antenna has a first terminal and a second terminal to receive a signal. The first impedance converting circuit and the second impedance converting circuit have a first impedance and a second impedance, respectively. The first impedance and the second impedance each are controllable. One end of the first impedance converting circuit and one end of the second impedance converting circuit are connected to the first terminal and the second terminal of the antenna, respectively. The differential output unit is connected to the other end of the first impedance converting circuit and the other end of the second impedance converting circuit through which the signal received by the antenna is input to the differential output unit, and transform the signal into a differential signal. | 09-20-2012 |
20120258666 | WIRELESS COMMUNICATION APPARATUS AND METHOD - According to one embodiment, a wireless communication apparatus includes a determination unit, a first setting unit, a second setting unit and a wireless unit. The determination unit determines whether a signal degradation degree is higher than a threshold value. The first setting unit sets first parameters relating to a first data rate and a first communication robustness. The second setting unit sets second parameters relating to a second data rate and a second communication robustness if an instruction signal is received and if the signal degradation degree is higher than the threshold value. The wireless unit communicates with a communication partner using one of the first parameters and the second parameters. | 10-11-2012 |
20130203360 | WIRELESS COMMUNICATION DEVICE AND WIRELESS COMMUNICATION METHOD - A wireless communication device has a plurality of wireless units each configured to cover a different wireless communication range and be capable of receiving data in the corresponding wireless communication range, a status information generator provided corresponding to the wireless unit utilized to receive data among the plurality of wireless units, in order to generate status information concerning the wireless communication range of the wireless unit utilized to receive the data, and a storage configured to store the status information in association with the data. | 08-08-2013 |
20130243129 | QUADRATURE ERROR COMPENSATING CIRCUIT - According to one embodiment, a quadrature error compensating circuit for acquiring an in-phase component signal and a quadrature component signal, includes a first filter, a first multiplier, a first subtractor, a second filter, a correlation calculating circuit. The first multiplier multiplies the in-phase component signal by a control value. The correlation calculating circuit calculates a cross-correlation value between an output of the first filter and an output of the second filter, and uses the cross-correlation value as the control value. | 09-19-2013 |
20140172626 | RECOMMENDATION-INFORMATION PROVIDING APPARATUS AND RECOMMENDATION-INFORMATION PROVIDING METHOD - A recommendation-information providing apparatus has an activity-history collecting part to collect activity histories of at least one of a first user and or a second user associated with the first user, a recommendation-information extracting part to extract recommendation information to be recommended to the first user, a recommendation-information providing part to provide the second user with the extracted recommendation information, a reservation accepting part to accept recommendation information for which the second user has performed a purchase reservation among the provided recommendation information, a purchase-intention confirming part to confirm a purchase intention of the first user by providing the first user with the accepted recommendation information, and a settlement processing part to perform a settlement process with the first user. | 06-19-2014 |
20150063341 | WIRELESS COMMUNICATION APPARATUS - A wireless communication apparatus supports at least a second wireless communication scheme between a first wireless communication scheme and the second wireless communication scheme. The first wireless communication scheme requires that a wireless medium is determined to be busy when a reception level is equal to or greater than a minimum reception sensitivity level of a physical scheme. The apparatus includes a first processing unit and a second processing unit. The first processing unit is configured to set a value lower than a maximum transmission power of the first wireless communication scheme, for a maximum transmission power of the second wireless communication scheme and set a value greater than the minimum reception sensitivity level of the physical scheme, for a carrier sense level, when the second wireless communication scheme is used. The second processing unit is configured to carry out carrier sense using the carrier sense level. | 03-05-2015 |
20160128002 | WIRELESS COMMUNICATION APPARATUS - A wireless communication apparatus supports at least a second wireless communication scheme between a first wireless communication scheme and the second wireless communication scheme. The first wireless communication scheme requires that a wireless medium is determined to be busy when a reception level is equal to or greater than a minimum reception sensitivity level of a physical scheme. The apparatus includes a first processing unit and a second processing unit. The first processing unit is configured to set a value lower than a maximum transmission power of the first wireless communication scheme, for a maximum transmission power of the second wireless communication scheme and set a value greater than the minimum reception sensitivity level of the physical scheme, for a carrier sense level, when the second wireless communication scheme is used. The second processing unit is configured to carry out carrier sense using the carrier sense level. | 05-05-2016 |
Patent application number | Description | Published |
20100117071 | FIELD-EFFECT TRANSISTOR, AND PROCESS FOR PRODUCING FIELD-EFFECT TRANSISTOR - To provide a field-effect transistor improved in transparency, electrical properties, stability, uniformity, reproducibility, heat resistance and durability, and as a reduced overlap capacity between electrodes. | 05-13-2010 |
20100276688 | OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3): | 11-04-2010 |
20110006297 | PATTERNED CRYSTALLINE SEMICONDUCTOR THIN FILM, METHOD FOR PRODUCING THIN FILM TRANSISTOR AND FIELD EFFECT TRANSISTOR - A patterned crystalline semiconductor thin film which is obtained by a method including: forming an amorphous thin film comprising indium oxide as a main component, crystallizing part of the amorphous thin film to allow the part to be semiconductive, and removing an amorphous part of the partially crystallized thin film by etching. | 01-13-2011 |
20110050733 | THIN FILM TRANSISTOR MANUFACTURING METHOD, THIN FILM TRANSISTOR, THIN FILM TRANSISTOR SUBSTRATE AND IMAGE DISPLAY APPARATUS, IMAGE DISPLAY APPARATUS AND SEMICONDUCTOR DEVICE - To provide a method for producing a thin film transistor improved in stability, uniformity, reproducibility, heat resistance, durability or the like, a thin film transistor, a thin film transistor substrate, an image display apparatus, an image display apparatus and a semiconductor device. | 03-03-2011 |
20110180763 | OXIDE SINTERED BODY AND SPUTTERING TARGET - An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In | 07-28-2011 |
20110198586 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME - A thin film transistor including a gate electrode, a gate-insulating film, an oxide semiconductor film in contact with the gate-insulating film, and source and drain electrodes which connect to the oxide semiconductor film and are separated with a channel part therebetween, wherein the oxide semiconductor film comprises a crystalline indium oxide which includes hydrogen element, and the content of the hydrogen element contained in the oxide semiconductor film is 0.1 at % to 5 at % relative to all elements which form the oxide semiconductor film. | 08-18-2011 |
20110243835 | INDIUM OXIDE SINTERED COMPACT AND SPUTTERING TARGET - A sintered body includes an indium oxide crystal, and an oxide solid-dissolved in the indium oxide crystal, the oxide being oxide of one or more metals selected from the group consisting of aluminum and scandium, the sintered body having an atomic ratio “(total of the one or more metals)/(total of the one or more metals and indium)×100)” of 0.001% or more and less than 45%. | 10-06-2011 |
20110260157 | SEMICONDUCTOR DEVICE, THIN FILM TRANSISTOR AND A METHOD FOR PRODUCING THE SAME - A semiconductor device, a thin film transistor, and a method for producing the same capable of decreasing the management cost, and capable of decreasing the production steps to reduce the production cost are proposed. A method for producing a thin film transistor | 10-27-2011 |
20120273777 | SPUTTERING TARGET, OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE - A sputtering target including an oxide sintered body, the oxide sintered body containing indium (In) and at least one element selected from gadolinium (Gd), dysprosium (Dy), holmium (Ho), erbium (Er) and ytterbium (Yb), and the oxide sintered body substantially being of a bixbyite structure. | 11-01-2012 |
20130140175 | OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3): | 06-06-2013 |
20130146452 | FIELD EFFECT TRANSISTOR USING OXIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING THE SAME - A field effect transistor which includes, on a substrate, at least a semiconductor layer, a passivation layer for the semiconductor layer, a source electrode, a drain electrode, a gate insulating film and a gate electrode, the source electrode and the drain electrode being connected through the semiconductor layer, the gate insulating film being present between the gate electrode and the semiconductor layer, the passivation layer being at least on one surface side of the semiconductor layer, and the semiconductor layer including a composite oxide which comprises In (indium), Zn (zinc) and Ga (gallium) in the following atomic ratios (1) to (3): | 06-13-2013 |
20130313548 | OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3): | 11-28-2013 |
20140167033 | OXIDE SINTERED BODY AND SPUTTERING TARGET - An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In | 06-19-2014 |
Patent application number | Description | Published |
20100065835 | THIN FILM TRANSISTOR HAVING CRYSTALLINE INDIUM OXIDE SEMICONDUCTOR FILM - To provide a thin film transistor having an indium oxide-based semiconductor film which allows only a thin metal film on the semiconductor film to be selectively etched. A thin film transistor having a crystalline indium oxide semiconductor film which is composed mainly of indium oxide and contains a positive trivalent metal oxide. | 03-18-2010 |
20110315936 | SPUTTERING TARGET, OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE - A sputtering target including an oxide sintered body, the oxide sintered body containing indium (In) and at least one element selected from gadolinium (Gd), dysprosium (Dy), holmium (Ho), erbium (Er) and ytterbium (Yb), and the oxide sintered body substantially being of a bixbyite structure. | 12-29-2011 |
20120313057 | In-Ga-Sn OXIDE SINTER, TARGET, OXIDE SEMICONDUCTOR FILM, AND SEMICONDUCTOR ELEMENT - An oxide sintered body including indium element (In), gallium element (Ga) and tin element (Sn) in atomic ratios represented by the following formulas (1) to (3): | 12-13-2012 |
20130264565 | SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR AND PRODUCTION METHOD THEREFOR - A semiconductor thin film includes one or more amorphous metal oxides, an OH group being bonded to at least some of the metal atoms of the amorphous metal oxides. | 10-10-2013 |
20140084289 | THIN-FILM TRANSISTOR - A thin film transistor including an active layer, and has a field-effect mobility of 25 cm | 03-27-2014 |
20140102892 | IN2O3-ZNO SPUTTERING TARGET - A sputtering target including indium (In) and zinc (Zn) and an oxide including one or more elements X selected from the following group X,
| 04-17-2014 |
20140103268 | IN2O3-SNO2-ZNO SPUTTERING TARGET - A sputtering target including indium (In), tin (Sn) and zinc (Zn) and an oxide including one or more elements X selected from the following group X,
| 04-17-2014 |
20140145124 | IN-GA-ZN OXIDE SPUTTERING TARGET AND METHOD FOR PRODUCING SAME - A sputtering target including an oxide A and InGaZnO | 05-29-2014 |