| Patent application number | Description | Published |
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| 20090025878 | PLASMA REACTOR WITH REDUCED ELECTRICAL SKEW USING ELECTRICAL BYPASS ELEMENTS - RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing bypass current flow paths. One bypass current flow path avoids the pumping port in the chamber floor, and comprises a conductive symmetrical grill extending from the side wall to the grounded pedestal base. Another bypass current flow path avoids the wafer slit valve, and comprises an array of conductive straps bridging the section of the sidewall occupied by the slit valve. | 01-29-2009 |
| 20090025879 | PLASMA REACTOR WITH REDUCED ELECTRICAL SKEW USING A CONDUCTIVE BAFFLE - RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing a bypass current flow path. The bypass current flow path avoids the pumping port in the chamber floor and avoids the wafer slit valve, and is provided by a conductive annular baffle grounded to and extending from the wafer pedestal. Current flow below the level of the annular baffle can be blocked by providing one or more insulating rings in the sidewall or by providing a dielectric sidewall. | 01-29-2009 |
| 20090140828 | METHODS AND APPARATUS FOR CONTROLLING CHARACTERISTICS OF A PLASMA - Methods and apparatus for controlling characteristics of a plasma, such as the spatial distribution of RF power and plasma uniformity, are provided herein. In some embodiments, an apparatus for controlling characteristics of a plasma includes a resonator for use in conjunction with a plasma reactor, the resonator including a source resonator for receiving an RF signal having a first frequency; a return path resonator disposed substantially coaxially with, and at least partially within, the source resonator; and an outer conductor having the source resonator and the return path resonator disposed substantially coaxially with, and at least partially within, the outer conductor, the outer conductor for providing an RF ground connection. | 06-04-2009 |
| 20090162996 | REMOVAL OF SURFACE DOPANTS FROM A SUBSTRATE - A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma, to etch away the capping layer and form volatile compounds by reacting with excess dopant. In another embodiment, a substrate is doped by energetic implantation of dopant. A reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopant adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds. The reactive gas mixture may be provided during thermal treatment, or it may be provided before or after at temperatures different from the thermal treatment temperature. The volatile compounds are removed. Substrates so treated do not form toxic compounds when stored or transported outside process equipment. | 06-25-2009 |
| 20090195777 | DOSIMETRY USING OPTICAL EMISSION SPECTROSCOPY/RESIDUAL GAS ANALYZER IN CONJUNCTION WITH ION CURRENT - The present invention generally provides methods and apparatus for controlling ion dosage in real time during plasma processes. In one embodiment, ion dosages may be controlled using in-situ measurement of the plasma from a mass distribution sensor combined with in-situ measurement from an RF probe. | 08-06-2009 |
| 20090197401 | Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces - Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction. | 08-06-2009 |
| 20090230089 | ELECTRICAL CONTROL OF PLASMA UNIFORMITY USING EXTERNAL CIRCUIT - A method and apparatus for controlling plasma uniformity is disclosed. When etching a substrate, a non-uniform plasma may lead to uneven etching of the substrate. Impedance circuits may alleviate the uneven plasma to permit more uniform etching. The impedance circuits may be disposed between the chamber wall and ground, the showerhead and ground, and the cathode can and ground. The impedance circuits may comprise one or more of an inductor and a capacitor. The inductance of the inductor and the capacitance of the capacitor may be predetermined to ensure the plasma is uniform. Additionally, the inductance and capacitance may be adjusted during processing or between processing steps to suit the needs of the particular process. | 09-17-2009 |
| 20090257927 | FOLDED COAXIAL RESONATORS - A method for constructing a distributed element coaxial resonator includes folding a coaxial resonator to provide a structure having a decreased physical length compared to its electrical length. In various embodiments, the resonator is tuned to affect a standing wave when excited by a signal of a specific wavelength. The coaxial resonator includes inner, middle and outer conductor sections, wherein the characteristic impedance is maintained throughout the resonator. | 10-15-2009 |
| 20090284156 | METHOD AND APPARATUS FOR PULSED PLASMA PROCESSING USING A TIME RESOLVED TUNING SCHEME FOR RF POWER DELIVERY - Embodiments of the present invention generally provide methods and apparatus for pulsed plasma processing over a wide process window. In some embodiments, an apparatus may include an RF power supply having frequency tuning and a matching network coupled to the RF power supply that share a common sensor for reading reflected RF power reflected back to the RF power supply. In some embodiments, an apparatus may include an RF power supply having frequency tuning and a matching network coupled to the RF power supply that share a common sensor for reading reflected RF power reflected back to the RF power supply and a common controller for tuning each of the RF power supply and the matching network. | 11-19-2009 |
| 20090294061 | PLASMA REACTOR WITH PLASMA LOAD IMPEDANCE TUNING FOR ENGINEERED TRANSIENTS BY SYNCHRONIZED MODULATION OF AN UNMATCHED LOW POWER RF GENERATOR - A plasma reactor for processing a workpiece such as a semiconductor wafer using predetermined transients of plasma bias power or plasma source power has unmatched low power RF generators synchronized to the transients to minimize transient-induced changes in plasma characteristics. | 12-03-2009 |
| 20090294062 | PLASMA REACTOR WITH PLASMA LOAD IMPEDANCE TUNING FOR ENGINEERED TRANSIENTS BY SYNCHRONIZED MODULATION OF A SOURCE POWER OR BIAS POWER RF GENERATOR - In a plasma reactor employing source and bias RF power generators, plasma is stabilized against an engineered transient in the output of either the source or bias power generator by a compensating modulation in the other generator. | 12-03-2009 |
| 20090294275 | METHOD OF PLASMA LOAD IMPEDANCE TUNING BY MODULATION OF A SOURCE POWER OR BIAS POWER RF GENERATOR - A method of processing a workpiece in a plasma reactor chamber in which plasma RF source and bias power is delivered into the chamber, by sensing fluctuations in a plasma parameter such as load impedance or reflected power at one of the generators, and modulating the output of the other generator to minimize the fluctuation. | 12-03-2009 |
| 20090294414 | METHOD OF PLASMA LOAD IMPEDANCE TUNING FOR ENGINEERED TRANSIENTS BY SYNCHRONIZED MODULATION OF A SOURCE POWER OR BIAS POWER RF GERERATOR - A method processing a workpiece in a plasma reactor chamber in which a first one of plural applied RF plasma powers is modulated in accordance with a time-varying modulation control signal corresponding to a desired process transient cycle. The method achieves a reduction in reflected power by modulating a second one of the plural plasma powers in response to the time-varying modulation control signal. | 12-03-2009 |
| 20090295295 | PLASMA REACTOR WITH HIGH SPEED PLASMA LOAD IMPEDANCE TUNING BY MODULATION OF DIFFERENT UNMATCHED FREQUENCY SOURCES - Fluctuations in a plasma characteristic such as load impedance are compensated by a controller that modulates a stabilization RF generator coupled to the plasma having a frequency suitable for stabilizing the plasma characteristic, the controller being responsive to the fluctuations in the plasma characteristic. | 12-03-2009 |
| 20090295296 | METHOD OF PLASMA LOAD IMPEDANCE TUNING BY MODULATION OF AN UNMATCHED LOW POWER RF GENERATOR - A workpiece is processed in a plasma reactor chamber using stabilization RF power delivered into the chamber, by determining changes in load impedance from RF parameters sensed at an RF source or bias power generator and resolving the changes in load impedance into first and second components thereof, and changing the power level of the stabilization RF power as a function one of the components of changes in load impedance. | 12-03-2009 |
| 20090297404 | PLASMA REACTOR WITH HIGH SPEED PLASMA IMPEDANCE TUNING BY MODULATION OF SOURCE POWER OR BIAS POWER - A plasma reactor, having source and bias RF power generators of different frequencies, is provided with a controller responsive to fluctuations in plasma load impedance measured at one of the generators to modulate the output of the other generator to compensate for the fluctuations. | 12-03-2009 |
| 20090298287 | METHOD OF PLASMA LOAD IMPEDANCE TUNING FOR ENGINEERED TRANSIENTS BY SYNCHRONIZED MODULATION OF AN UNMATCHED LOW POWER RF GENERATOR - A method is provided in plasma processing of a workpiece for stabilizing the plasma against engineered transients in applied RF power, by modulating an unmatched low power RF generator in synchronism with the transient. | 12-03-2009 |
| 20090302002 | METHOD AND APPARATUS FOR REMOVING POLYMER FROM A SUBSTRATE - A method and an apparatus for removing polymer from a substrate are provided. In one embodiment, an apparatus utilized to remove polymer from a substrate includes a processing chamber having a chamber wall and a chamber lid defining a process volume, a substrate support assembly disposed in the processing chamber, and a remote plasma source coupled to the processing chamber through an outlet port formed within the chamber wall, the outlet port having an opening pointing toward an periphery region of a substrate disposed on the substrate support assembly, wherein the remote plasma source is fabricated from a material resistant to hydrogen species. | 12-10-2009 |
| 20090321019 | RF POWER DELIVERY SYSTEM IN A SEMICONDUCTOR APPARATUS - Embodiments of the invention provide an apparatus which provide good RF uniformity within a processing chamber. In one embodiment, an apparatus includes a substrate support assembly, a terminal, and a dielectric insulator. The substrate support assembly has a center passage formed along a center axis. An RF transmission line is provided. The RF transmission line has a substantially vertical portion and a substantially horizontal portion, wherein the terminal is coupled to the substantially horizontal portion of the RF transmission line. The dielectric insulator circumscribes the substantially horizontal portion of the RF transmission line. The dielectric insulator has a first opening through which the terminal passes. | 12-31-2009 |
| 20100013572 | APPARATUS FOR MULTIPLE FREQUENCY POWER APPLICATION - Apparatus and methods are provided for a power matching apparatus for use with a processing chamber. In one aspect of the invention, a power matching apparatus is provided including a first RF power input coupled to a first adjustable capacitor, a second RF power input coupled to a second adjustable capacitor, a power junction coupled to the first adjustable capacitor and the second adjustable capacitor, a receiver circuit coupled to the power junction, a high voltage filter coupled to the power junction and the high voltage filter has a high voltage output, a voltage/current detector coupled to the power junction and a RF power output connected to the voltage/current detector. | 01-21-2010 |
| 20100018648 | WORKPIECE SUPPORT FOR A PLASMA REACTOR WITH CONTROLLED APPORTIONMENT OF RF POWER TO A PROCESS KIT RING - In an electrostatic chuck, RF bias power is separately applied to a workpiece and to a process kit collar surrounding the workpiece. At least one variable impedance element governed by a system controller adjusts the apportionment of RF bias power between the workpiece and the process kit collar, allowing dynamic adjustment of the plasma sheath electric field at the extreme edge of the workpiece, for optimum electric field uniformity under varying plasma conditions, for example. | 01-28-2010 |
| 20100025384 | FIELD ENHANCED INDUCTIVELY COUPLED PLASMA (FE-ICP) REACTOR - Embodiments of field enhanced inductively coupled plasma reactors and methods of use of same are provided herein. In some embodiments, a field enhanced inductively coupled plasma processing system may include a process chamber having a dielectric lid and a plasma source assembly disposed above the dielectric lid. The plasma source assembly includes one or more coils configured to inductively couple RF energy into the process chamber to form and maintain a plasma therein, one or more electrodes configured to capacitively couple RF energy into the process chamber to form the plasma therein, wherein the one or more electrodes are electrically coupled to one of the one or more coils, and an RF generator coupled to the one or more inductive coils and the one or more electrodes. In some embodiments, a heater element may be disposed between the dielectric lid and the plasma source assembly. | 02-04-2010 |
| 20100136793 | EFFICIENT AND ACCURATE METHOD FOR REAL-TIME PREDICTION OF THE SELF-BIAS VOLTAGE OF A WAFER AND FEEDBACK CONTROL OF ESC VOLTAGE IN PLASMA PROCESSING CHAMBER - In a plasma reactor having an electrostatic chuck, wafer voltage may be determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage may be used to accurately control the DC wafer clamping voltage. | 06-03-2010 |
| 20100188077 | APPARATUS FOR CHARACTERIZING A MAGNETIC FIELD IN A MAGNETICALLY ENHANCED SUBSTRATE PROCESSING SYSTEM - Embodiments of sensor devices for characterizing magnetic fields formed in substrate processing systems and methods of use thereof are provided herein. In some embodiments, an apparatus for characterizing a magnetic field in a substrate processing system may include a carrier having a form substantially similar to a substrate to be processed in the substrate processing system. One or more magnetic sensors are disposed on the carrier for measuring a magnitude of a magnetic field formed in the processing system in an x-, y-, and z-direction. A microprocessor is coupled to the one or more magnetic sensors to sample data representative of the magnitude of the magnetic field in the x-, y-, and z-directions proximate a position of each sensor. A memory device is coupled to the microprocessor for storing the sampled data. A power source is provided to supply power to each magnetic sensor and the microprocessor. | 07-29-2010 |
| 20100248488 | PULSED PLASMA HIGH ASPECT RATIO DIELECTRIC PROCESS - Radial distribution of etch rate is controlled by controlling the respective duty cycles of pulsed VHF source power applied to the ceiling and pulsed HF or MF bias power on the workpiece. Net average electrical charging of the workpiece is controlled by providing an electronegative process gas and controlling the voltage of a positive DC pulse on the workpiece applied during pulse off times of the pulsed VHF source power. | 09-30-2010 |
| 20100270262 | ETCHING LOW-K DIELECTRIC OR REMOVING RESIST WITH A FILTERED IONIZED GAS - A method of etching a low-k dielectric on, or removing resist from, a substrate. In the method, the substrate is placed in a process zone. An ionized gas is generated in a gas ionization zone above the process zone, by introducing a process gas into a gas ionization zone, maintaining the process gas at a pressure of less than about 0.1 mTorr, and coupling RF energy to the process gas to form an ionized gas. The ionized gas is passed through an ion filter to form a filtered ionized gas. The substrate is exposed to the filtered ionized gas to etch the low-k dielectric layer on the substrate or to remove or clean remnant resist on the substrate. | 10-28-2010 |
| 20100327873 | MULTI-DIAGNOSTIC APPARATUS FOR SUBSTRATE-LEVEL MEASUREMENTS - Described herein is a method and apparatus for diagnosing processing equipment with a multi-diagnostic device. In one embodiment, a multi-diagnostic device is located in a plasma processing environment and includes an electronic circuitry. The device includes a first array of sensors and a second array of sensors. The circuitry is used to simultaneously (or nearly simultaneously) measure the distributions of ion saturation current and the potential at the device using the first array of sensors and to measure resistances of the second array of sensors to determine the distribution of the temperature at the surface of the device. | 12-30-2010 |
| 20110005679 | PLASMA UNIFORMITY CONTROL THROUGH VHF CATHODE GROUND RETURN WITH FEEDBACK STABILIZATION OF VHF CATHODE IMPEDANCE - Plasma process uniformity is controlled by maintaining near an optimum value an impedance of a ground return path for VHF source power from an overhead electrode through a workpiece support. A feedback control loop controls a variable reactance element of a reactive circuit that provides isolation between the VHF source power and a lower frequency bias power match circuit. | 01-13-2011 |
| 20110005685 | PLASMA REACTOR WITH UNIFORM PROCESS RATE DISTRIBUTION BY IMPROVED RF GROUND RETURN PATH - In a plasma reactor having an RF plasma source power applicator at its ceiling, an integrally formed grid liner includes a radially extending plasma confinement ring and an axially extending side wall liner. The plasma confinement ring extends radially outwardly near the plane of a workpiece support surface from a pedestal side wall, and includes an annular array of radial slots, each of the slots having a narrow width corresponding to an ion collision mean free path length of a plasma in the chamber. The side wall liner covers an interior surface of the chamber side wall and extends axially from a height near a height of said workpiece support surface to the chamber ceiling. | 01-13-2011 |
| 20110009999 | PLASMA REACTOR WITH RF GENERATOR AND AUTOMATIC IMPEDANCE MATCH WITH MINIMUM REFLECTED POWER-SEEKING CONTROL - An impedance match at an RF generator output of a plasma reactor includes plural minimum-seeking loop controllers having respective feedback input ports coupled to receive a reflected RF power signal from a reflected power sensing circuit and respective control output ports. The output ports are coupled to variable reactances of an impedance match circuit that is connected between the RF generator and an RF power applicator of the reactor. | 01-13-2011 |
| 20110023780 | APPARATUS FOR VHF IMPEDANCE MATCH TUNING - Embodiments of impedance matching networks are provided herein. In some embodiments, an impedance matching network may include a coaxial resonator having an inner and an outer conductor. A tuning capacitor may be provided for variably controlling a resonance frequency of the coaxial resonator. The tuning capacitor may be formed by a first tuning electrode and a second tuning electrode and an intervening dielectric, wherein the first tuning electrode is formed by a portion of the inner conductor. A load capacitor may be provided for variably coupling energy from the inner conductor to a load. The load capacitor may be formed by the inner conductor, an adjustable load electrode, and an intervening dielectric. | 02-03-2011 |
| 20110024047 | SUBSTRATE SUPPORT HAVING FLUID CHANNEL - A support for a substrate processing chamber comprises a chuck having a substrate receiving surface, and a base comprising an upper wall comprising a recessed trench having (i) an attachment face at a first depth, and (ii) a fluid channel at a second depth. A lower wall is seated in the recessed trench and attached to the attachment face of the upper wall, to close the fluid channel. A fluid inlet is provided to supply a heat transfer fluid to the fluid channel and a fluid outlet provided to discharge the heat transfer fluid from the fluid channel. | 02-03-2011 |
| 20110031216 | SYNCHRONIZED RADIO FREQUENCY PULSING FOR PLASMA ETCHING - Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma. | 02-10-2011 |
| 20110162798 | METHODS AND APPARATUS FOR TUNING MATCHING NETWORKS - Methods and apparatus for tuning matching networks are provided herein. A method of tuning a matching network includes providing a matching network coupling an RF source to a load, the matching network having a tunable element disposed at a first set point; increasing a value of the tunable element by a first step above the first set point; sensing a first adjusted value of a reflected RF power; decreasing the value of the tunable element by the first step below the first set point; sensing a second adjusted value of the reflected RF power; comparing the first and the second adjusted values of the reflected RF power; and moving the tunable element to a second set point that corresponds to a position having a lowest adjusted value of the reflected RF power. The method may be repeated until the reflected RF power falls within an acceptable reflected RF power range. | 07-07-2011 |
| 20110186545 | FEEDFORWARD TEMPERATURE CONTROL FOR PLASMA PROCESSING APPARATUS - Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature. | 08-04-2011 |
| 20110207307 | PLASMA IMMERSION ION IMPLANTATION METHOD USING A PURE OR NEARLY PURE SILICON SEASONING LAYER ON THE CHAMBER INTERIOR SURFACES - Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction. | 08-25-2011 |
| 20110256691 | REMOVAL OF SURFACE DOPANTS FROM A SUBSTRATE - A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma, to etch away the capping layer and form volatile compounds by reacting with excess dopant. In another embodiment, a substrate is doped by energetic implantation of dopant. A reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopant adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds. The reactive gas mixture may be provided during thermal treatment, or it may be provided before or after at temperatures different from the thermal treatment temperature. The volatile compounds are removed. Substrates so treated do not form toxic compounds when stored or transported outside process equipment. | 10-20-2011 |
| 20110291771 | APPARATUS FOR MULTIPLE FREQUENCY POWER APPLICATION - Apparatus and methods are provided for a power matching apparatus for use with a processing chamber. In one aspect of the invention, a power matching apparatus is provided including a first RF power input coupled to a first adjustable capacitor, a second RF power input coupled to a second adjustable capacitor, a power junction coupled to the first adjustable capacitor and the second adjustable capacitor, a receiver circuit coupled to the power junction, a high voltage filter coupled to the power junction and the high voltage filter has a high voltage output, a voltage/current detector coupled to the power junction and a RF power output connected to the voltage/current detector. | 12-01-2011 |
| 20120034136 | SYMMETRIC VHF PLASMA POWER COUPLER WITH ACTIVE UNIFORMITY STEERING - A coaxial VHF power coupler includes conductive element inside a hollow cylindrical outer conductor of the power coupler and surrounding an axial section of a hollow cylindrical inner conductor of the power coupler. Respective plural motor drives contacting the hollow cylindrical outer conductor are connected to respective locations of the movable conductive element. | 02-09-2012 |
| 20120043023 | SYMMETRIC VHF SOURCE FOR A PLASMA REACTOR - The disclosure pertains to a capactively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a folded structure and symmetrical power distribution. | 02-23-2012 |
| 20120069174 | APPARATUS AND METHOD FOR ANALYZING THERMAL PROPERTIES OF COMPOSITE STRUCTURES - Embodiments of the present invention provide methods and apparatus for analyzing thermal properties of bonding materials within a composite structure. One embodiment of the present invention provides an apparatus for analyzing thermal property of a bonding material within a structure. The apparatus comprises a structure support having a supporting surface configured to support the structure, a heat source configured to direct a heat flux to the structure supported by the supporting surface of the structure support, and a camera facing the structure supported on the structure support and configured to capture thermal images of the structure supported on the structure support. | 03-22-2012 |
| 20120086464 | IN-SITU VHF VOLTAGE/CURRENT SENSORS FOR A PLASMA REACTOR - An RE voltage probe is adapted to have a long coaxial cable to permit a measuring device to be connected remotely from the probe without distorting the voltage measurement. An RF current probe is encapsulated in a conductive housing to permit its placement inside a plasma reactor chamber. | 04-12-2012 |
| 20120193456 | GAS DISTRIBUTION PLATE WITH DISCRETE PROTECTIVE ELEMENTS - Embodiments of the present invention provide a gas distribution plate assembly having protective elements for plasma processing. The gas distribution plate assembly includes a base plate having a front side and a backside, and a plurality of protective elements in direct contact with the base plate. The protective elements cover the front side of the base plate to protect the base plate from a plasma processing environment during use. | 08-02-2012 |
| 20120199071 | PLASMA IMMERSION CHAMBER - Embodiments described herein relate to a plasma chamber and processing system utilizing robust components. In one embodiment, a chamber is provided. The chamber includes a body having an interior volume, a gas distribution assembly disposed in the interior volume opposing a substrate support, the gas distribution assembly having a coolant channel disposed thereon, and a first hollow conduit and a second hollow conduit coupled to the body and in fluid communication with the interior volume. | 08-09-2012 |
| 20120241091 | RF POWER DELIVERY SYSTEM IN A SEMICONDUCTOR APPARATUS - Embodiments of the invention provide an apparatus which provide good RF uniformity within a processing chamber. In one embodiment, an apparatus includes a substrate support assembly, a terminal, and a dielectric insulator. The substrate support assembly has a center passage formed along a center axis. An RF transmission line is provided. The RF transmission line has a substantially vertical portion and a substantially horizontal portion, wherein the terminal is coupled to the substantially horizontal portion of the RF transmission line. The dielectric insulator circumscribes the substantially horizontal portion of the RF transmission line. The dielectric insulator has a first opening through which the terminal passes. | 09-27-2012 |
| 20120318773 | METHODS AND APPARATUS FOR CONTROLLING PHOTORESIST LINE WIDTH ROUGHNESS WITH ENHANCED ELECTRON SPIN CONTROL - The present invention provides methods and an apparatus for controlling and modifying line width roughness (LWR) of a photoresist layer with enhanced electron spinning control. In one embodiment, an apparatus for controlling a line width roughness of a photoresist layer disposed on a substrate includes a processing chamber having a chamber body having a top wall, side wall and a bottom wall defining an interior processing region, a support pedestal disposed in the interior processing region of the processing chamber, and a plasma generator source disposed in the processing chamber operable to provide predominantly an electron beam source to the interior processing region. | 12-20-2012 |
| 20120322011 | METHODS AND APPARATUS FOR PERFORMING MULTIPLE PHOTORESIST LAYER DEVELOPMENT AND ETCHING PROCESSES - The present invention provides methods and an apparatus controlling and minimizing process defects in a development process, and modifying line width roughness (LWR) of a photoresist layer after the development process, and maintaining good profile control during subsequent etching processes. In one embodiment, a method for forming features on a substrate includes developing and removing exposed areas in the photosensitive layer disposed on the substrate in the electron processing chamber by predominantly using electrons, removing contaminants from the substrate by predominantly using electrons, and etching the non-photosensitive polymer layer exposed by the developed photosensitive layer in the electron processing chamber by predominantly using electrons. | 12-20-2012 |
| 20130087286 | SYMMETRIC PLASMA PROCESS CHAMBER - Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems. | 04-11-2013 |
| 20130098551 | ELECTRON BEAM PLASMA SOURCE WITH ARRAYED PLASMA SOURCES FOR UNIFORM PLASMA GENERATION - A plasma reactor that generates plasma in workpiece processing chamber by a electron beam, has an electron beam source chamber and an array of plasma sources facing the electron beam source chamber for affecting plasma electron density in different portions of the processing chamber. In another embodiment, an array of separately controlled electron beam source chambers is provided. | 04-25-2013 |
| 20130098552 | E-BEAM PLASMA SOURCE WITH PROFILED E-BEAM EXTRACTION GRID FOR UNIFORM PLASMA GENERATION - A plasma, reactor that relies on an electron beam as a plasma source employs a profiled electron beam extraction grid in an electron beam source to improve uniformity. | 04-25-2013 |
| 20130098872 | SWITCHED ELECTRON BEAM PLASMA SOURCE ARRAY FOR UNIFORM PLASMA PRODUCTION - An array of electron beam sources surrounding a processing region of a plasma reactor is periodically switched to change electron beam propagation direction and remove or reduce non-uniformities. | 04-25-2013 |
| 20130098873 | OVERHEAD ELECTRON BEAM SOURCE FOR PLASMA ION GENERATION IN A WORKPIECE PROCESSING REGION - A plasma reactor has a main chamber for processing a workpiece in a processing region bounded between an overhead ceiling and a workpiece support surface, the reactor having an overhead electron beam source that produces an electron beam flowing into the processing region through the ceiling of the main chamber. | 04-25-2013 |
| 20130098882 | ELECTRON BEAM PLASMA SOURCE WITH SEGMENTED BEAM DUMP FOR UNIFORM PLASMA GENERATION - A plasma reactor that generates plasma in a workpiece processing chamber by an electron beam, has an electron beam source and segmented beam dump that is profiled to promote uniformity in the electron beam-produced plasma. | 04-25-2013 |
| 20130213935 | SYNCHRONIZED RADIO FREQUENCY PULSING FOR PLASMA ETCHING - Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma. | 08-22-2013 |
| 20130240144 | FAST RESPONSE FLUID TEMPERATURE CONTROL SYSTEM - A plasma processing apparatus and method to control a temperature of a chamber component therein. A process chamber may include a temperature controlled chamber component and at least one remote heat transfer fluid loop comprising a first heat exchanger having a primary side in fluid communication with a heat sink or heat source, and a local heat transfer fluid loop placing the chamber component in fluid communication with a secondary side of the first heat exchanger. The local loop may be of significantly smaller fluid volume than the remote loop(s) and circulated to provide thermal load of uniform temperature. Temperature control of heat transfer fluid in the local loop and temperature control of the chamber component may be implemented with a cascaded control algorithm. | 09-19-2013 |
| 20130277333 | PLASMA PROCESSING USING RF RETURN PATH VARIABLE IMPEDANCE CONTROLLER WITH TWO-DIMENSIONAL TUNING SPACE - In a plasma reactor having a driven electrode and a counter electrode, an impedance controller connected between the counter electrode and ground includes both series sand parallel variable impedance elements that facilitate two-dimensional movement of a ground path input impedance in a complex impedance space to control spatial distribution of a plasma process parameter. | 10-24-2013 |
| 20130278141 | THREE-COIL INDUCTIVELY COUPLED PLASMA SOURCE WITH INDIVIDUALLY CONTROLLED COIL CURRENTS FROM A SINGLE RF POWER GENERATOR - An inductively coupled plasma reactor has three concentric RF coil antennas and a current divider circuit individually controlling currents in each of the three coil antennas by varying only two reactive elements in the current divider circuit. | 10-24-2013 |
| 20130278142 | THREE-COIL INDUCTIVELY COUPLED PLASMA SOURCE WITH INDIVIDUALLY CONTROLLED COIL CURRENTS FROM A SINGLE RF POWER GENERATOR - An inductively coupled plasma reactor has three concentric coil antennas and a current divider circuit individually controlling currents in each of the three coil antennas by varying two variable impedance elements in the current divider circuit in response to a desired current apportionment among the coil antennas received from a user interface. | 10-24-2013 |
| 20130284369 | TWO-PHASE OPERATION OF PLASMA CHAMBER BY PHASE LOCKED LOOP - Plasma distribution is controlled in a plasma reactor by controlling the phase difference between opposing RF electrodes, in accordance with a desired or user-selected phase difference, by a phase-lock feedback control loop. | 10-31-2013 |
| 20130284370 | INDEPENDENT CONTROL OF RF PHASES OF SEPARATE COILS OF AN INDUCTIVELY COUPLED PLASMA REACTOR - Plasma distribution is controlled in a plasma reactor by controlling the phase differences between different RF coil antennas, in accordance with a desired or user-selected phase difference, by a phase-lock feedback control loop. | 10-31-2013 |
| 20130292057 | CAPACITIVELY COUPLED PLASMA SOURCE WITH RF COUPLED GROUNDED ELECTRODE - An overhead RF coupling chamber couples RF power to a ceiling electrode of a plasma reactor chamber, the RF coupling chamber having a resonant annular volume defined by coaxial cylindrical conductors, one of which is coupled to an RF power source, the chamber ceiling having an annular gap around the electrode, and the resonant annular volume being aligned with the annular gap so that the resonant annular volume opens into the interior of the main chamber, thereby enhancing the electrical length of the RF coupling chamber. | 11-07-2013 |
| 20130320998 | IN-SITU VHF CURRENT SENSOR FOR A PLASMA REACTOR - An RF current probe is encapsulated in a conductive housing to permit its placement inside a plasma reactor chamber. An RF voltage probe is adapted to have a long coaxial cable to permit a measuring device to be connected remotely from the probe without distorting the voltage measurement. | 12-05-2013 |
| 20140020835 | SYMMETRICAL INDUCTIVELY COUPLED PLASMA SOURCE WITH SYMMETRICAL FLOW CHAMBER - A plasma reactor has an overhead multiple coil inductive plasma source with symmetric RF feeds and a symmetrical chamber exhaust with plural struts through the exhaust region providing access to a confined workplace support. A grid may be included for masking spatial effects of the struts from the processing region. | 01-23-2014 |
| 20140020836 | INDUCTIVELY COUPLED PLASMA SOURCE WITH PLURAL TOP COILS OVER A CEILING AND AN INDEPENDENT SIDE COIL - A plasma reactor for processing a workplace includes a reactor chamber having a ceiling and a sidewali and a workplace support facing the ceiling and defining a processing region, and a pair of concentric independently excited RF coil antennas overlying the ceiling and a side RF coil concentric with the side wall and facing the side wall below the ceiling, and being excited independently. | 01-23-2014 |
| 20140020837 | INDUCTIVELY COUPLED PLASMA SOURCE WITH MULTIPLE DIELECTRIC WINDOWS AND WINDOW-SUPPORTING STRUCTURE - A plasma reactor enclosure has a metallic portion and a dielectric portion of plural dielectric windows supported on the metallic portion, each of the dielectric windows extending around an axis of symmetry. Plural concentric coil antennas are disposed on an external side of the enclosure, respective ones of the coil antennas facing respective ones of the dielectric windows. | 01-23-2014 |
| 20140020838 | SYMMETRICAL INDUCTIVELY COUPLED PLASMA SOURCE WITH COAXIAL RF FEED AND COAXIAL SHIELDING - A plasma reactor has an overhead multiple coil inductive plasma source with symmetric RF feeds and symmetrical RF shielding around the symmetric RF feeds. | 01-23-2014 |
| 20140020839 | INDUCTIVELY COUPLED PLASMA SOURCE WITH SYMMETRICAL RF FEED - A plasma reactor has an overhead multiple coil inductive plasma source with RF feeds arranged in equilateral symmetry. | 01-23-2014 |
| 20140021861 | SYMMETRICAL INDUCTIVELY COUPLED PLASMA SOURCE WITH SIDE RF FEEDS AND RF DISTRIBUTION PLATES - A plasma reactor has an overhead multiple coil inductive plasma source with symmetric and radial RF feeds and cylindrical RF shielding around the symmetric and radial RF feeds. The radial RF feeds are symmetrically fed to the plasma source. | 01-23-2014 |
| 20140034239 | DIFFERENTIAL COUNTER ELECTRODE TUNING IN A PLASMA REACTOR WITH AN RF-DRIVEN WORKPIECE SUPPORT ELECTRODE - A plasma reactor includes an RF-driven wafer support electrode underlying a process zone and two (or more) counter electrodes overlying the process zone and facing different portions of the process zones, two (or more) variable reactances connected between respective ones of the counter electrodes and ground, and a controller governing the variable reactances to control distribution of a plasma parameter such as plasma ion density or ion energy. | 02-06-2014 |
| 20140034612 | METHOD OF DIFFERENTIAL COUNTER ELECTRODE TUNING IN AN RF PLASMA REACTOR - A method of controlling distribution of a plasma parameter in a plasma reactor having an RF-driven electrode and two (or more) counter electrodes opposite the RF driven electrode and facing different portions of the process zones. The method includes providing two (or more) variable reactances connected between respective ones of the counter electrodes and ground, and governing the variable reactances to change distribution of a plasma parameter such as plasma ion density or ion energy. | 02-06-2014 |
| 20140069584 | DIFFERENTIAL COUNTER ELECTRODE TUNING IN A PLASMA REACTOR WITH AN RF-DRIVEN CEILING ELECTRODE - A plasma reactor includes an RF-driven ceiling electrode overlying a process zone and two (or more) counter electrodes underlying the process zone and facing different portions of the process zones, two (or more) variable reactances connected between respective ones of the counter electrodes and ground, and a controller governing the variable reactances to control distribution of a plasma parameter such as plasma ion density or ion energy. | 03-13-2014 |
| 20140170856 | METHOD AND SYSTEM FOR ETCHING PLURAL LAYERS ON A WORKPIECE INCLUDING A LOWER LAYER CONTAINING AN ADVANCED MEMORY MATERIAL - Etching of a thin film stack including a lower thin film layer containing an advanced memory material is carried out in an inductively coupled plasma reactor having a dielectric RF window without exposing the lower thin film layer, and then the etch process is completed in a toroidal source plasma reactor. | 06-19-2014 |
| 20140196849 | INDUCTIVELY COUPLED PLASMA SOURCE - Embodiments of methods and apparatus for plasma processing are provided herein. In some embodiments, an inductively coupled plasma apparatus may include a bottom wall comprising a hub and a ring coupled to the hub by a capacitor, wherein the hub and the ring are each electrically conductive, and where the hub has a central opening aligned with a central axis of the inductively coupled plasma apparatus; a top wall spaced apart from and above the bottom wall, wherein the top wall has a central opening aligned with the central axis, and wherein the tope wall is electrically conductive; a sidewall electrically connecting the ring to the top wall; and a tube electrically connecting the hub to the top wall, the tube having a central opening aligned with the central axis. | 07-17-2014 |
| 20140202634 | RADIAL TRANSMISSION LINE BASED PLASMA SOURCE - Radial transmission line based plasma sources for etch chambers are described. In an example, a radial transmission line based plasma source includes a gas delivery channel having a first end coupled to a gas inlet and having a second end coupled to a plasma showerhead. A folded or co-axial stub surrounds at least a portion of the gas delivery channel. An RF input is coupled to the folded or co-axial stub. | 07-24-2014 |
| 20140232263 | SYMMETRICAL INDUCTIVELY COUPLED PLASMA SOURCE WITH SIDE RF FEEDS AND SPIRAL COIL ANTENNA - A plasma reactor has an overhead multiple coil antennas including a parallel spiral coil antenna and symmetric and radial RF feeds and cylindrical RF shielding around the symmetric and radial RF feeds. The radial RF feeds are symmetrically fed to the plasma source. | 08-21-2014 |
| 20140262031 | MULTI-MODE ETCH CHAMBER SOURCE ASSEMBLY - A multi-chambered processing platform includes one or more multi-mode plasma processing systems. In embodiments, a multi-mode plasma processing system includes a multi-mode source assembly having a primary source to drive an RF signal on a showerhead electrode within the process chamber and a secondary source to generate a plasma with by driving an RF signal on an electrode downstream of the process chamber. In embodiments, the primary | 09-18-2014 |
| 20140262032 | METHOD AND APPARATUS FOR GENERATING A VARIABLE CLOCK USED TO CONTROL A COMPONENT OF A SUBSTRATE PROCESSING SYSTEM - Methods and apparatus for generating a variable clock used to control a component of a substrate processing system are provided herein. In some embodiments, an apparatus for controlling a substrate processing system includes: a phase locked loop circuit for generating a relative clock that is phase locked to a variable frequency signal being used by a substrate processing chamber; and a controller, coupled to the phase locked loop circuit, for producing a control signal for a component of the substrate processing system, wherein the control signal is based upon the relative clock and an operating indicia of the substrate processing system. | 09-18-2014 |
| 20140265832 | MULTIPLE COIL INDUCTIVELY COUPLED PLASMA SOURCE WITH OFFSET FREQUENCIES AND DOUBLE-WALLED SHIELDING - A plasma reactor has an overhead multiple coil antennas including a parallel spiral coil antenna and symmetric and radial RF feeds and cylindrical RF shielding around the symmetric and radial RF feeds. The radial RF feeds are symmetrically fed to the plasma source. | 09-18-2014 |
| 20140265855 | ELECTRON BEAM PLASMA SOURCE WITH SEGMENTED SUPPRESSION ELECTRODE FOR UNIFORM PLASMA GENERATION - A plasma reactor that generates plasma in a workpiece processing chamber by an electron beam, has an electron beam source and segmented suppression electrode with individually biased segments to control electron beam density distribution. | 09-18-2014 |
| 20140265910 | DIGITAL PHASE CONTROLLER FOR TWO-PHASE OPERATION OF A PLASMA REACTOR - Phase angle between opposing electrodes in a plasma reactor is controlled in accordance with a user selected phase angle. Direct digital synthesis of RF waveforms of different phases for the different electrodes is employed. The synthesis is synchronized with a reference clock. The address generator employed for direct digital synthesis is synchronized with an output clock signal that is generated in phase with the reference clock using a phase lock loop. The phase lock loop operates only during a limited initialization period. | 09-18-2014 |
| 20140312766 | SYMMETRICAL PLURAL-COIL PLASMA SOURCE WITH SIDE RF FEEDS AND RF DISTRIBUTION PLATES - A plasma reactor has an overhead inductively coupled plasma source with two coil antennas and symmetric and radial RF feeds and cylindrical RF shielding around the symmetric and radial RF feeds. The radial RF feeds are symmetrically fed to the plasma source. | 10-23-2014 |
| 20140338835 | ELECTRON BEAM PLASMA SOURCE WITH REDUCED METAL CONTAMINATION - In a plasma reactor for processing a workpiece, an electron beam is employed as the plasma source, and sputtered metal atoms are removed from the electron beam to reduce contamination. | 11-20-2014 |
| 20140339980 | ELECTRON BEAM PLASMA SOURCE WITH REMOTE RADICAL SOURCE - In a plasma reactor for processing a workpiece, an electron beam is employed as the plasma source, and a remote radical source is incorporated with the process chamber. | 11-20-2014 |
| 20140342570 | ETCH PROCESS HAVING ADAPTIVE CONTROL WITH ETCH DEPTH OF PRESSURE AND POWER - The disclosure concerns a plasma-enhanced etch process in which chamber pressure and/or RF power level is ramped throughout the etch process. | 11-20-2014 |
| 20140356768 | CHARGED BEAM PLASMA APPARATUS FOR PHOTOMASK MANUFACTURE APPLICATIONS - Embodiments of the present invention generally provide an apparatus and methods for etching photomasks using charged beam plasma. In one embodiment, an apparatus for performing a charged beam plasma process on a photomask includes a processing chamber having a chamber bottom, a chamber ceiling and chamber sidewalls defining an interior volume, a substrate support pedestal disposed in the interior volume, a charged beam generation system disposed adjacent to the chamber sidewall, and a RF bias electrode disposed in the substrate support. | 12-04-2014 |
| 20140370708 | PHOTORESIST TREATMENT METHOD BY LOW BOMBARDMENT PLASMA - Methods for reducing the line width roughness on a photoresist pattern are provided herein. In some embodiments, a method of processing a patterned photoresist layer disposed atop a substrate includes flowing a process gas into a processing volume of a process chamber having the substrate disposed therein; forming a plasma within the process chamber from the process gas, wherein the plasma has a ion energy of about 1 eV to about 10 eV; and etching the patterned photoresist layer with species from the plasma to at least one of smooth a line width roughness of a sidewall of the patterned photoresist layer or remove debris. | 12-18-2014 |
| 20140374024 | APPARATUS FOR REMOVING PARTICLES FROM A TWIN CHAMBER PROCESSING SYSTEM - Embodiments of an apparatus for removing particles from a twin chamber processing system are provided herein. In some embodiments, an apparatus for removing particles from a twin chamber processing system includes a remote plasma system; and a plurality of conduits fluidly coupling the remote plasma system to each process chamber of a twin chamber processing system to provide a plasma to an exhaust volume of each process chamber, wherein each conduit of the plurality of conduits has an outlet disposed along a boundary of the respective exhaust volumes. | 12-25-2014 |
| 20150040829 | MULTIZONE HOLLOW CATHODE DISCHARGE SYSTEM WITH COAXIAL AND AZIMUTHAL SYMMETRY AND WITH CONSISTENT CENTRAL TRIGGER - Embodiments of the present invention relate to hollow cathode plasma sources with improved uniformity. One embodiment of the present invention provides a hollow cathode assembly having a conductive rod disposed in an inner volume along a central axis of a hollow cathode. The conductive rod being closest to the ground electrode and having the sharpest features of the hollow cathode becomes the point of plasma ignition. Since the conductive rod is positioned along the central axis, the plasma is ignited at symmetrically about the central axis thus improving plasma uniformity and reducing skews. | 02-12-2015 |
| 20150042017 | THREE-DIMENSIONAL (3D) PROCESSING AND PRINTING WITH PLASMA SOURCES - Embodiments include systems, apparatuses, and methods of three-dimensional plasma printing or processing. In one embodiment, a method includes introducing chemical precursors into one or more point plasma sources, generating plasma in the one or more point plasma sources from the chemical precursors with one or more power sources, and locally patterning a substrate disposed over a stage with the generated plasma by moving the stage with respect to the one or more point plasma sources. | 02-12-2015 |
| 20150075716 | SPATIALLY DISCRETE MULTI-LOOP RF-DRIVEN PLASMA SOURCE HAVING PLURAL INDEPENDENT ZONES - An RF plasma source has a resonator with its shorted end joined to the processing chamber ceiling and inductively coupled to two arrays of radial toroidal channels in the ceiling, the resonator having two radial zones and the two arrays of toroidal channels lying in respective ones of the radial zones. | 03-19-2015 |
| 20150075717 | INDUCTIVELY COUPLED SPATIALLY DISCRETE MULTI-LOOP RF-DRIVEN PLASMA SOURCE - An RF plasma source has a resonator with its shorted end joined to the processing chamber ceiling and inductively coupled to an array of radial toroidal channels in the ceiling. | 03-19-2015 |
| 20150075719 | SYMMETRIC VHF SOURCE FOR A PLASMA REACTOR - The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution. | 03-19-2015 |
