Patent application number | Description | Published |
20120241735 | OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE - Provided is an oxide semiconductor film which has more stable electric characteristics and essentially consists of indium zinc oxide. In addition, provided is a highly reliable semiconductor device which has stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film essentially consisting of indium zinc oxide has a hexagonal crystal structure in which the a-b plane is substantially parallel to a surface of the oxide semiconductor film and a rhombohedral crystal structure in which the a-b plane is substantially parallel to the surface of the oxide semiconductor film. | 09-27-2012 |
20130126868 | SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR ELEMENT - In a semiconductor element including an oxide semiconductor film as an active layer, stable electrical characteristics are achieved. A semiconductor element includes a base film which is an oxide film at least a surface of which has crystallinity; an oxide semiconductor film having crystallinity over the base film; a gate insulating film over the oxide semiconductor film; a gate electrode overlapping with at least the oxide semiconductor film, over the gate insulating film; and a source electrode and a drain electrode which are electrically connected to the oxide semiconductor film. The base film is a film containing indium and zinc. With the structure, a state of crystals in the oxide semiconductor film reflects that in the base film; thus, the oxide semiconductor film can have crystallinity in a large region in the thickness direction. Accordingly, the electrical characteristics of the semiconductor element including the film can be made stable. | 05-23-2013 |
20130153889 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - To manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor. An oxide semiconductor film is deposited by a sputtering method with the use of a polycrystalline sputtering target. In that case, partial pressure of water in a deposition chamber before or in the deposition is set to be lower than or equal to 10 | 06-20-2013 |
20140152336 | Semiconductor Device and Method for Evaluating Semiconductor Device - A semiconductor layer with a low density of trap states is provided. A transistor with stable electrical characteristics is provided. A transistor having high field-effect mobility is provided. A semiconductor device including the transistor is provided. A method for evaluating a semiconductor layer is provided. A method for evaluating a transistor is provided. A method for evaluating a semiconductor device is provided. Provided is, for example, a semiconductor layer with a low defect density which can be used for a channel formation region of a transistor, a transistor including a semiconductor layer with a low defect density in a channel formation region, or a semiconductor device including the transistor. | 06-05-2014 |
20140175438 | OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE - Provided is an oxide semiconductor film which has more stable electric characteristics and essentially consists of indium zinc oxide. In addition, provided is a highly reliable semiconductor device which has stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film essentially consisting of indium zinc oxide has a hexagonal crystal structure in which the a-b plane is substantially parallel to a surface of the oxide semiconductor film and a rhombohedral crystal structure in which the a-b plane is substantially parallel to the surface of the oxide semiconductor film. | 06-26-2014 |
20140239183 | IMAGING DEVICE - An imaging device which is highly stable to irradiation with radiations such as X-rays and can inhibit a decrease in electrical characteristics is provided. The imaging device obtains an image using radiations such as X-rays and includes pixel circuits which are arranged in a matrix and which a scintillator overlaps. Each of the pixel circuits includes a switching transistor whose off-state current is extremely low and a light-receiving element. A shielding layer formed using a metal material and the like overlaps the transistor and the light-receiving element. With the structure, an imaging device which is highly stable to irradiation with radiations such as X-rays and can inhibit a decrease in electrical characteristics can be provided. | 08-28-2014 |
20140374755 | OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE - Provided is an oxide semiconductor film which has more stable electric characteristics and essentially consists of indium zinc oxide. In addition, provided is a highly reliable semiconductor device which has stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film essentially consisting of indium zinc oxide has a hexagonal crystal structure in which the a-b plane is substantially parallel to a surface of the oxide semiconductor film and a rhombohedral crystal structure in which the a-b plane is substantially parallel to the surface of the oxide semiconductor film. | 12-25-2014 |
20160027924 | Semiconductor Device and Method for Evaluating Semiconductor Device - A semiconductor layer with a low density of trap states is provided. A transistor with stable electrical characteristics is provided. A transistor having high field-effect mobility is provided. A semiconductor device including the transistor is provided. A method for evaluating a semiconductor layer is provided. A method for evaluating a transistor is provided. A method for evaluating a semiconductor device is provided. Provided is, for example, a semiconductor layer with a low defect density which can be used for a channel formation region of a transistor, a transistor including a semiconductor layer with a low defect density in a channel formation region, or a semiconductor device including the transistor. | 01-28-2016 |
Patent application number | Description | Published |
20090083520 | DATA PROCESSING DEVICE - Provided is a data processing device that can prevent data used by a program from being used by another program in an unauthorized manner, regardless of the quality of the programs. The data processing device includes: a CPU | 03-26-2009 |
20090204806 | CERTIFYING DEVICE, VERIFYING DEVICE, VERIFYING SYSTEM, COMPUTER PROGRAM AND INTEGRATED CIRCUIT - An authentication system that can show having an authentic computer program, can certify the authenticity of itself, and can verify the certification. The authentication system is composed of a terminal (requesting device) and a card (verifying device). The card stores secret information to be used by the terminal, and an update program for the terminal. The card verifies authenticity of the terminal using information obtained from the terminal. When it judges that the terminal is authentic, the card outputs the secret information to the terminal. When it judges that the terminal is not authentic, the card outputs the update program. With this structure, the terminal is forced to update the program when it attempts to use the secret information. | 08-13-2009 |
20100063996 | INFORMATION PROCESSING DEVICE, INFORMATION RECORDING DEVICE, INFORMATION PROCESSING SYSTEM, PROGRAM UPDATE METHOD, PROGRAM, AND INTEGRATED CIRCUIT - According to the prior art, it is difficult to ensure an update of a program when a terminal has already been hacked because in that case, there is a possibility that the reliability of the update module has been lost. A card storing secret information to be used by the terminal includes: a function to store an update program for the terminal and confirm whether or not the terminal is authentic by using information obtained from the terminal; and a function to output the secret information when the terminal is judged to be authentic and output an update program when the terminal is judged not to be authentic. With this structure, when the terminal attempts to use the secret information, the terminal is forced to update the program. | 03-11-2010 |
20100189265 | KEY TERMINAL APPARATUS, CRYPTO-PROCESSING LSI, UNIQUE KEY GENERATION METHOD, AND CONTENT SYSTEM - A key terminal apparatus includes a crypto-processing LSI that performs predetermined crypto-processing. Unique information identifying the crypto-processing LSI is embedded in the crypto-processing LSI. A predetermined master key corresponding to a predetermined key is embedded in the crypto-processing LSI. The crypto-processing LSI (a) receives an encrypted manufacturer key from the manufacturer key storage unit, (b) decrypts the encrypted manufacturer key using the predetermined master key to generate a manufacturer key, (c) generates a unique manufacturer key identical to the predetermined unique manufacturer key, based on the unique information embedded in the crypto-processing LSI and the generated manufacturer key, and (d) decrypts the received encrypted device key using the generated identical unique manufacturer key to generate a predetermined device key. | 07-29-2010 |
20110279460 | CHARACTER INPUT DEVICE AND CHARACTER INPUT METHOD - A character input device includes: a terminal control unit that accepts information on a character candidate being a candidate of an input confirmed character, and performs a displaying process of the character candidate, and generates a guide image whose image varies in accordance with a remaining time until an input confirmation of the character candidate; and a display unit that displays the character candidate and the guide image. By displaying the guide image that varies in accordance with the remaining time before the input character is confirmed, how long it takes until the character is confirmed, or whether the character has already been confirmed is reported to the user, so as to avoid an unintended manipulation of the user. | 11-17-2011 |
20110314423 | IMAGE DISPLAY DEVICE AND IMAGE DISPLAY METHOD - An image display device includes an image generator, a controller, and a display unit. The image generator generates a guide image which is to be displayed differently with a lapse of time to change the sequential selection mode to the skip selection mode when a user input indicates a long press on a same key over the period which determines that the user input indicates a long key press and the sequential selection mode is moved into the skip selection mode. The controller controls the image generator to generate the guide image. The display unit displays the guide image. | 12-22-2011 |
Patent application number | Description | Published |
20090003854 | RECORDING APPARATUS AND METHOD FOR CONTROLLING THE RECORDING APPARATUS - A recording apparatus includes a recording unit configured to record an image on a recording medium, a roller configured to convey the recording medium, a first signal generation unit configured to generate a first period signal according to a movement of the recording medium, a second signal generation unit configured to generate a second period signal according to a rotation of the roller, a correction unit configured to correct the first period signal when a period value of the first period signal is outside a predetermined range, an information generation unit configured to generate variation information of a moving speed of the recording medium based on the first period signal, and a control unit configured to control recording on the recording medium based on the variation information and the second period signal. | 01-01-2009 |
20090096838 | INK JET RECORDING HEAD - An ink jet recording head is constituted by a plurality of recording element substrates each including at least one nozzle array having a plurality of nozzles for ejecting ink and heat generating resistors for ejecting the ink by thermal energy, a common liquid chamber having an introducing port for supplying the ink to the nozzles and a discharging port for discharging the introduced ink outside the ink jet recording head, and a supporting member on which the recording element substrates are mounted and in which a plurality of individual liquid chambers for supplying the ink to associated ones of the recording element substrates and a plurality of ink inlet ports for supplying the ink from the common liquid chamber to associated ones of the individual liquid chambers are formed. The individual liquid chambers are arranged in a direction of flow of the ink flowing from the ink introducing port toward the discharging port. At least in an upstreammost individual liquid chamber with respect to the direction, a center line of an associated inlet port with respect to the direction is located downstream of a center line of with respect to the direction. | 04-16-2009 |
20090141063 | INKJET PRINTING HEAD AND INKJET PRINTING APPARATUS - A temperature rise of a head due to a printing operation with a higher speed and a higher density is suppressed. To realize this, an inkjet printing head is provided in which a plurality of printing element substrates having an ejection opening array consisting of a plurality of ejection openings for ejecting ink are arranged on a support plate in a direction of the ejection opening array. The support plate includes therein a heat pipe and a flow path through which cooling liquid is flowed. | 06-04-2009 |
20090141064 | INK JET RECORDING HEAD AND INK JET RECORDING APPARATUS - An ink jet recording head includes a flow passage for a liquid for cooling a recording element substrate. The flow passage is provided inside a support plate that supports the recording element substrate along a recording element array of the recording element substrate. The shortest distance between a recording element and the flow passage at the end of the support plate is larger than the shortest distance between a recording element and the flow passage in the middle of the support plate. | 06-04-2009 |
20100295917 | IMAGE FORMING APPARATUS - An image forming apparatus capable of enhancing the accuracy of the scanning position of a laser beam to thereby obtain a more precise image. Optical sensors detect reflected light from a surface of a photosensitive drum. During image formation, the apparatus detects the scanning speed of the laser beam in a main scanning direction based on detection signals from the respective optical sensors in each of divisional sections of an image forming area in the main scanning direction. The apparatus corrects magnification of the image in the main scanning direction, based on results of detection of the scanning speed of the laser beam in the main scanning direction. | 11-25-2010 |
20110199417 | RECORDING APPARATUS AND METHOD FOR CONTROLLING THE RECORDING APPARATUS - A recording apparatus includes a recording unit configured to record images on a recording medium of a roll-type, the recording unit including a plurality of line-type recording heads, a first conveyance roller, located at an upstream side of the plurality of line-type recording heads, a second conveyance roller, located at a downstream side of the plurality of line-type recording heads, a first signal generation unit, including a laser doppler speed meter for detecting a surface of the recording medium being conveyed, a second signal generation unit, including a rotary encoder, a correction unit configured to correct the first signal when a period value of the first signal is outside a predetermined range, an information generation unit, and a control unit configured to control recording on the recording medium based on the variation information and the second signal so as to suppress adverse effects caused by the first conveyance roller. | 08-18-2011 |
20120019608 | OPTICAL SCANNING APPARATUS AND CONTROL METHOD THEREFOR - An optical scanning apparatus capable of properly correcting a main scanning scale factor. Upstream and downstream laser-light detection sensors of the optical scanning apparatus each generate a signal when first or second light beam passes through each of slits formed in the sensors. Based on signals, a scanning time required for each light beam to scan between the sensors is measured. A correction coefficient is decided by a correction value calculation unit based on a difference between wavelengths of the first and second light beams, a scanning time difference is calculated by a comparison unit based on the correction coefficient and scanning times of the light beams, and the downstream laser-light detection sensor is rotated by a sensor rotation drive unit to make the scanning time difference zero, whereby the slits are made parallel to each other. | 01-26-2012 |
20140233988 | IMAGE FORMING APPARATUS - A control portion of an image forming apparatus controls an exposure unit and a developing unit to form misregistration inspecting toner images at both end portions and a center portion of a photoconductive drum and transfers the toner images to an intermediate transfer belt. Then, the control portion detects a misregistration amount of each toner image by misregistration detecting sensors to obtain position information in a main scanning direction per each phase position in which the scanning exposure has been performed on the image carrier. The control portion corrects detection results of the detecting sensors at the both end portions by removing an axial moving amount within a rotation cycle of the photoconductive drum on a basis of a detection result of the misregistration detecting sensor at the center portion. | 08-21-2014 |
Patent application number | Description | Published |
20090101959 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory device including: a semiconductor substrate; memory cell transistors that are series-connected; and a select transistor that includes: a first diffusion region that is formed in the semiconductor substrate at one end of the memory cell transistors; a first insulating film that is formed on the semiconductor substrate at a side of the first diffusion region; a select gate electrode that is formed on the first insulating film; a semiconductor pillar that is formed to extend upward from the semiconductor substrate and to be separated from the select gate electrode; a second insulating film that is formed between the select gate electrode and the semiconductor pillar; and a second diffusion region that is formed on the semiconductor pillar. | 04-23-2009 |
20090289293 | SEMICONDUCTOR DEVICE HAVING TRI-GATE STRUCTURE AND MANUFACTURING METHOD THEREOF - A semiconductor device of an example of the invention comprises a memory cell and a select gate transistor provided for the memory cell. A gate electrode of the select gate transistor has a Tri-gate structure in which an upper surface of a gate insulating film formed above a channel of the select gate transistor is set higher than a portion of an upper surface of an element isolation region of the select gate transistor. | 11-26-2009 |
20100055886 | SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming a mask layer on a first-conductivity-type semiconductor substrate, etching the semiconductor substrate using the mask layer as a mask, thereby forming a projecting semiconductor layer, forming a first insulating layer on the semiconductor substrate to cover a lower portion of the projecting semiconductor layer, doping a first-conductivity-type impurity into the first insulating layer, thereby forming a high-impurity-concentration layer in the lower portion of the projecting semiconductor layer, forming gate insulating films on side surfaces of the projecting semiconductor layer which upwardly extend from an upper surface of the first insulating layer, and forming a gate electrode on the gate insulating films and on the first insulating film. | 03-04-2010 |
20100295112 | SEMICONDUCTOR STORAGE DEVICE - A semiconductor storage device has a semiconductor substrate, a plurality of first insulating films formed on the semiconductor substrate with predetermined spacing therebetween, an element isolation region formed between the first insulating films in a first direction, a floating gate electrode comprising a first charge accumulation film formed on the first insulating film, a second charge accumulation film formed on the first charge accumulation film and having a width in a second direction orthogonal to the first direction smaller than the width of the first charge accumulation film, and a third charge accumulation film formed on the second charge accumulation film and having the width in the second direction larger than the width of the second charge accumulation film, a second insulating film formed on the second charge accumulation film and between the second charge accumulation film and the element isolation region, a third insulating film formed on the charge accumulation film and the element isolation region along the second direction, and a control gate electrode formed on the third insulating film. | 11-25-2010 |
20110121381 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device according to an embodiment of the present invention includes a substrate, a first gate insulator formed on the substrate and serving as an F-N (Fowler-Nordheim) tunneling film, a first floating gate formed on the first gate insulator, a second gate insulator formed on the first floating gate and serving as an F-N tunneling film, a second floating gate formed on the second gate insulator, an intergate insulator formed on the second floating gate and serving as a charge blocking film, and a control gate formed on the intergate insulator, at least one of the first and second floating gates including a metal layer. | 05-26-2011 |
20110207309 | SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming a mask layer on a first-conductivity-type semiconductor substrate, etching the semiconductor substrate using the mask layer as a mask, thereby forming a projecting semiconductor layer, forming a first insulating layer on the semiconductor substrate to cover a lower portion of the projecting semiconductor layer, doping a first-conductivity-type impurity into the first insulating layer, thereby forming a high-impurity-concentration layer in the lower portion of the projecting semiconductor layer, forming gate insulating films on side surfaces of the projecting semiconductor layer which upwardly extend from an upper surface of the first insulating layer, and forming a gate electrode on the gate insulating films and on the first insulating film. | 08-25-2011 |
20120046924 | ION IMPLANTING SIMULATING METHOD AND A COMPUTER-READABLE MEDIUM - In one embodiment, there is provided an ion implanting simulating method of implanting incident particles into a substrate, and gaining stationary position coordinates of each of the incident particles in the substrate, thereby calculating the distribution of the incident particles in the substrate. In the method, the followings are repeated desired times by a computer: implanting one of the incident particles into the substrate; calculating the trace of the incident particle traveling in the substrate while undergoing collision with an atom contained in the substrate repeatedly, and the energy lost from the incident particle by the collision, based on a beforehand-inputted composition of the substrate, thereby calculating stationary position coordinates of the incident particle; and renewing the composition of the substrate in accordance with a matter that the substrate contains the implanted incident particle. | 02-23-2012 |
20130037823 | SEMICONDUCTOR DEVICE - In one embodiment, a semiconductor device includes a semiconductor substrate, a gate electrode provided on the semiconductor substrate via an insulating layer, and a gate insulator provided on a side surface of the gate electrode. The device includes a stacked layer including a lower main terminal layer of a first conductivity type, an intermediate layer, and an upper main terminal layer of a second conductivity type which are successively stacked on the semiconductor substrate, the stacked layer being provided on the side surface of the gate electrode via the gate insulator. The upper or lower main terminal layer is provided on the side surface of the gate electrode via the gate insulator and the semiconductor layer. | 02-14-2013 |
20140061777 | SEMICONDUCTOR DEVICE - In one embodiment, a semiconductor device includes a substrate, and a source region of a first conductivity type disposed on a surface of the substrate. The device further includes a tunnel insulator disposed on the source region, and an impurity semiconductor layer of a second conductivity type disposed on the tunnel insulator, the second conductivity type being different from the first conductivity type. The device further includes a gate insulator disposed on the impurity semiconductor layer, and a gate electrode disposed on the gate insulator. The device further includes a drain region of the second conductivity type disposed on the substrate so as to be separated from the impurity semiconductor layer, or disposed on the substrate as a portion of the impurity semiconductor layer. | 03-06-2014 |
20150263117 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device according to an embodiment comprises: a gate insulating film formed on a semiconductor substrate; a semiconductor layer formed on the gate insulating film; and a first metal layer formed to be electrically connected to the semiconductor layer. 1×10 | 09-17-2015 |
Patent application number | Description | Published |
20120108756 | PROCESS FOR PRODUCTION OF FLUORINE-CONTAINING BLOCK COPOLYMER - Provided is a process for the production of a fluorine-containing block copolymer, which suppresses the formation of a homopolymer as a by-product and which, regardless of whether the chain transfer constant of the iodine end is large or small, achieves nearly 100% conversion into a block copolymer. The process is characterized by reacting (A) a fluorine-containing polymer which has an iodine atom or a bromine atom at either or both terminals of the backbone chain and/or at a side-chain terminal with (M) a radical-polymerizable monomer in the presence of (C) a sulfur compound represented by general formula (2): (Y | 05-03-2012 |
20130027339 | TRANSPARENT PIEZOELECTRIC SHEET-WITH-A-FRAME, TOUCH PANEL, AND ELECTRONIC DEVICE EACH HAVING THE TRANSPARENT PIEZOELECTRIC SHEET - A transparent piezoelectric sheet-with-a-frame includes a transparent piezoelectric sheet and a frame covering a peripheral edge portion of the transparent piezoelectric sheet. The transparent piezoelectric sheet includes one transparent piezoelectric film including an organic polymer, one first transparent plate electrode placed on a first main surface of the transparent piezoelectric film and having a first transparent plate electrode portion, and one second transparent plate electrode placed on a second main surface of the transparent piezoelectric film and having a second transparent plate electrode portion. An outline of the second transparent plate electrode portion is positioned inside an outline of the first transparent plate electrode portion as seen in a plan view. The outline of the first transparent plate electrode portion completely coincides with the frame, and the outline of the second transparent plate electrode portion does not at all coincide with the frame as seen in the plan view. | 01-31-2013 |
20130027340 | TRANSPARENT PIEZOELECTRIC SHEET, AND TRANSPARENT PIEZOELECTRIC SHEET-WITH-A-FRAME, TOUCH PANEL, AND ELECTRONIC DEVICE EACH HAVING THE TRANSPARENT PIEZOELECTRIC SHEET - A transparent piezoelectric sheet includes a quadrilateral-shaped transparent piezoelectric film and a first transparent plate electrode. The quadrilateral-shaped transparent piezoelectric film includes an organic polymer. The quadrilateral-shaped transparent piezoelectric film has entire main surfaces that are piezoelectric. The first transparent plate electrode is layered on part of a first main surface of the main surfaces of the transparent piezoelectric film. One to three sides of the four sides of the quadrilateral shape of the transparent piezoelectric film and area(s) of the first main surface adjacent thereto are not covered by the first transparent plate electrode. | 01-31-2013 |
20140016176 | HYDROPHOBIC DIELECTRIC FILM FOR ELECTROWETTING - A hydrophobic dielectric film for electrowetting, which can drive a conductive liquid by using a low voltage and containing a vinylidene fluoride based polymer. | 01-16-2014 |