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| 20100058449 | AUTHENTICATION SYSTEM AND AUTHENTICATION METHOD - An authentication system includes a plurality of personal authentication servers, a client terminal, a replacing portion and a renewing portion. The plurality of personal authentication servers store at least a part of enrolled data different from each other for user personal authentication and perform authentication with stored enrolled data according to authentication request from a client terminal. The client terminal stores identification information for specifying the personal authentication server storing each enrolled data, and requests an authentication to the personal authentication server specified with the identification information. The replacing portion replaces at least a part of the enrolled data between the plurality of personal authentication servers according to the authentication request condition to the plurality of personal authentication servers from the client terminal. The renewing portion renews the identification information according to the replacing result of the replacing portion. | 03-04-2010 |
| 20100275258 | METHOD AND APPARATUS FOR PROCESSING BIOMETRIC INFORMATION - A biometric-information processing apparatus and method including storing sample biometric information of a user each time biometric authentication processing for verifying sample biometric information of a user against enrolled biometric information registered in a first storage unit succeeds, where the user's sample biometric information is stored in a second storage unit, and selecting an update-candidate biometric information for updating the user's enrolled biometric information from the user's sample biometric information stored in the second storage unit, based on a result of verification of multiple pieces of the user's sample biometric information stored in the second storage unit against enrolled biometric information of other users. | 10-28-2010 |
| 20110001607 | BIOMETRIC AUTHENTICATION SYSTEM, BIOMETRIC AUTHENTICATION METHOD, BIOMETRIC AUTHENTICATION APPARATUS, BIOMETRIC INFORMATION PROCESSING APPARATUS - A biometric authentication method includes an enrollment step of generating enrollment-purpose mixed feature point information by extracting enrollment-purpose true feature point information from input enrollment-purpose biometric information, and by combining part of the enrollment-purpose true feature point information, which is selected based on dummy data generated at random, and false feature point information generated based on the dummy data, and an authentication step of executing authentication by extracting authentication-purpose feature point information from input authentication-purpose biometric information, generating authentication-purpose mixed feature point information that includes part of the authentication-purpose feature point information, which is selected based on the false feature point information, and the false feature point information, and by matching the authentication-purpose mixed feature point information with the enrollment-purpose mixed feature point information. | 01-06-2011 |
| 20110202985 | AUTHENTICATION SYSTEM, AUTHENTICATION SERVER, AND SUB-AUTHENTICATION SERVER - An authentication server transmits authentication information used to authenticate the transmission origin of an authentication request, to a sub-authentication server, when receiving the authentication request. The authentication server transmits identification information to identify the sub-authentication server to which the authentication information is transmitted, to a terminal. The terminal includes a transmission destination storage unit that stores identification information to identify the transmission destination of the authentication request and transmits the authentication request to the transmission destination identified with the identification information stored by the transmission destination storage unit. The terminal updates the identification information using the identification information, when receiving the identification information. The sub-authentication server includes an authentication information storage unit that stores the authentication information transmitted from the authentication server to the sub-authentication server, and authenticates the transmission origin of the authentication request using the stored authentication information, when receiving the authentication request. | 08-18-2011 |
| 20120079579 | BIOMETRIC AUTHENTICATION SYSTEM, BIOMETRIC AUTHENTICATION SERVER, METHOD AND PROGRAM THEREOF - An authentication system in which a authentication server and a plurality of clients are coupled through a network and configured to process an authentication from a user of a client, is configured to determine as a cache target user another user who is different from the user who requested the authentication; is configured to generate an identifier that indicates the cache target user; and is configured to transmit biometric data of the cache target user and the identifier to the client from which the authentication of the user was requested. A cache availability determiner can determine whether biometric data of any cache target user are available on a client. | 03-29-2012 |
| 20120291111 | BIOMETRIC AUTHENTICATION SYSTEM AND BIOMETRIC AUTHENTICATION METHOD - A biometric authentication method is executed by a biometric authentication system comprising a server device to store biometric data of a plurality of users in a registering unit; and a client device to retain the biometric data sampled from the user and authenticated by the server device in a retaining unit together with user information. The method comprises verifying the biometric data sampled from the user with the cache biometric data retained in the retaining unit when in authentication; acquiring synthesized information of the cache biometric data of which the verification gets successful and the biometric data sampled from the user; and authenticating the synthesized information by use of the biometric data specified by the user information of the biometric data of which the verification gets successful in plural sets of biometric data registered in the registering unit. | 11-15-2012 |
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| 20110176812 | OPTICAL COMMUNICATION CARD AND COMMUNICATION DEVICE - Multiplexing-technology based large-capacity transmission requires the installation of many types of interface card. In addition, supporting a redundant configuration for preventing data communication from being interrupted requires the devices and cards more than double those required for the production system. An optical communication card includes multiple optical signal transmission/reception units, main signal processing units corresponding to the optical signal transmission/reception units and required for a multiplexed system, and a connection selection unit that can switch among multiple optical transmission lines, and each of the main signal processing units includes multiple function units and a function selection unit. | 07-21-2011 |
| 20110182188 | FAILURE DISPLAY METHOD, FAILURE SETTING DEVICE AND MONITOR CONTROL DEVICE - To provide an apparatus capable of receiving the signals different in various services and various signal types to facilitate an isolation of a fault location. To provide a layer integrated device in which a maintenance person can arbitrarily select a maintenance method for a maintenance according to needs for maintenance of an individual layers or needs for maintenance with a result of performing an inter-layer processing. A setting screen on which the maintenance person can select a layer type to manage and a management method is mounted on a setting device. The maintenance person selects and sets a layer integrated setting or a layer individual setting on a display section and a setting section. From a set result of the maintenance person, the setting device or an NE performs a corresponding process and displays a failure indication. | 07-28-2011 |
| 20120099871 | OPTICAL COMMUNICATION CARD AND OPTICAL TRANSMISSION DEVICE - There arises a problem that power consumption increases along with an increasing throughout of an FEC function effective in speeding up of a transmission speed. FEC function information necessary for a system is prepared, and multiple FEC functions are properly used according to a selected transmission line, etc. | 04-26-2012 |
| 20120275473 | SHELF OF A NETWORK SYNCHRONIZATION DEVICE, AND NETWORK SYNCHRONIZATION DEVICE - A shelf of a network synchronization device includes: a clock input reception unit which receives an input of a clock signal; a clock output unit which outputs a clock signal; a clock interruption detection unit which detects a clock interruption if the clock input reception unit does not receive a clock; an AIS signal detection unit which detects an AIS signal if the AIS signal is received through the clock input reception unit; an AIS signal generation unit which generates the AIS signal; an alarm control unit which outputs a predetermined alarm notification when the AIS signal detection unit does not detect the AIS signal if the clock interruption detection unit detects the clock interruption; and an output signal selection unit which outputs the AIS signal generated by the AIS signal generation unit to the clock output unit if the clock interruption detection unit detects the clock interruption. | 11-01-2012 |
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| 20160003320 | SOLENOID VALVE - A solenoid valve includes a main valve having a valve seat and a main valve body configured to open or close a main flow passage, a pilot passage that branches from the main flow passage, an orifice provided in the pilot passage, a back-pressure chamber configured to bias the main valve body to a closing direction by virtue of an internal pressure, a pilot valve configured to control an internal pressure of the back-pressure chamber, and a solenoid configured to control a valve opening pressure of the pilot valve. There is a time difference between a valve opening timing of the main valve and a valve opening timing of the pilot valve such that the valve opening timing of the main valve is delayed from the valve opening timing of the pilot valve. | 01-07-2016 |
| 20160025176 | SOLENOID VALVE - A solenoid valve includes a valve seat provided in a main flow passage, a main valve body configured to open or close the main flow passage, a pilot passage that branches from the main flow passage, an orifice provided in the pilot passage, a back-pressure chamber connected to the pilot passage downstream from the orifice to bias the main valve body to a closing direction by virtue of an internal pressure, a pilot valve disposed in the pilot passage downstream from a connection point to the back-pressure chamber to control an internal pressure of the back-pressure chamber, a solenoid configured to control a valve opening pressure of the pilot valve, and a second orifice provided between the back-pressure chamber and the pilot valve. | 01-28-2016 |
| 20160025177 | DAMPING VALVE - A damping valve includes a valve seat member provided with a port, a valve body that opens or closes the port, a tubular spool that abuts on a side of the valve body opposite to the valve seat member, a spool holding member that has an outer circumference where the spool is mounted movably along an axial direction, a ring mounted to the outer circumference of the spool holding member, the ring contacting slidably with an inner circumference of the spool, and a back-pressure chamber partitioned by the spool and the spool holding member, the back-pressure chamber being configured to bias the spool such that the valve body is pressed toward the valve seat member using an internal pressure, wherein the internal pressure of the back-pressure chamber is applied to an inner circumferential side of the ring. | 01-28-2016 |
| 20160025178 | DAMPING VALVE - A damping valve includes a valve seat member having a port and a first valve seat surrounding the port, a main valve body seated on or unseated from the first valve seat, the main valve body having a second valve seat oppositely to the valve seat member, a subsidiary valve body seated on or unseated from the second valve seat, a valve-body intermediate chamber provided between the main valve body and the subsidiary valve body in an inner circumferential side of the second valve seat, a restrictive passage that causes the port and the valve-body intermediate chamber to communicate with each other, the restrictive passage being configured to apply resistance to a flow of fluid passing therethrough, and a subsidiary valve body biasing means configured to bias the subsidiary valve body toward the main valve body. | 01-28-2016 |
| 20160025237 | DAMPING VALVE - A damping valve includes a valve seat member, a valve body, a back-pressure chamber, a pilot passage, and a pilot valve, wherein the pilot valve has a pilot valve seat member and a pilot valve body, the pilot valve seat member having an cylindrical valve container provided with a penetrating hole connecting the inside and the outside, the penetrating hole communicating with the port, and an annular pilot valve seat provided in an end of the valve container, and the pilot valve body having a large diameter portion, a small diameter portion slidably inserted into the valve container, and a concave portion provided between the large diameter portion and the small diameter portion to face the penetrating hole, and an end of the large diameter portion is seated on or unseated from the pilot valve seat to open or close the pilot passage. | 01-28-2016 |
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| 20120056155 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes a structural body, a first electrode layer, and a second electrode layer. The structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer between the first semiconductor layer and the second semiconductor layer. The first electrode layer includes a metal portion, a plurality of first opening portions, and at least one second opening portion. The metal portion has a thickness of not less than 10 nanometers and not more than 200 nanometers along a direction from the first semiconductor layer toward the second semiconductor layer. The plurality of first opening portions each have a circle equivalent diameter of not less than 10 nanometers and not more than 1 micrometer. The at least one second opening portion has a circle equivalent diameter of more than 1 micrometer and not more than 30 micrometers. | 03-08-2012 |
| 20120056222 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting layer, a first electrode layer, and a second electrode layer. The light emitting layer is between the first semiconductor layer and the second semiconductor layer. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer. The first electrode layer includes a metal portion and a plurality of opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer. The metal portion contacts the second semiconductor layer. An equivalent circular diameter of a configuration of the opening portions as viewed along the direction is not less than 10 nanometers and not more than 5 micrometers. | 03-08-2012 |
| 20120056232 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitting device includes a structural body, a first electrode layer, an intermediate layer and a second electrode layer. The structural body includes a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type, and a light emitting layer between the first and second semiconductor layers. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer; the first electrode layer includes a metal portion and plural opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer, having an equivalent circular diameter not less than 10 nanometers and not more than 5 micrometers. The intermediate layer is between the first and second semiconductor layers in ohmic contact with the second semiconductor layer. The second electrode layer is electrically connected to the first semiconductor layer. | 03-08-2012 |
| 20120061640 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a second semiconductor layer of a second conductivity type, a light emitting layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions. The opening portions have an equivalent circle diameter being not less than 10 nanometers and not more than 50 micrometers. The second semiconductor layer is provided between the first semiconductor layer and the first electrode layer and includes a first portion in contact with the first electrode layer. The first portion has an impurity concentration of not less than 1×10 | 03-15-2012 |
| 20120061712 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a light emitting layer, a second semiconductor layer, a third semiconductor layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions. The opening portions penetrate the metal portion and have an equivalent circle diameter of a shape of the opening portions. The light emitting layer is between the first semiconductor layer and the first electrode layer. The second semiconductor layer of a second conductivity type is between the light emitting layer and the first electrode layer. The third semiconductor layer of a second conductivity type is between the second semiconductor layer and the first electrode layer. The second electrode layer is connected to the first semiconductor layer. | 03-15-2012 |
| 20120132948 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a light emitter, a first and a second electrode layer, a pad electrode and an auxiliary electrode portion. The emitter includes a first semiconductor layer provided on one side of the emitter, a second semiconductor layer provided on one other side of the emitter, and a light emitting layer provided between the first and second semiconductor layers. The first electrode layer is provided on opposite side of the second semiconductor layer from the first semiconductor layer and includes a metal layer and a plurality of apertures penetrating through the metal layer. The second electrode layer is electrically continuous with the first semiconductor layer. The pad electrode is electrically continuous with the first electrode layer. The auxiliary electrode portion is electrically continuous with the first electrode layer and extends in a second direction orthogonal to the first direction. | 05-31-2012 |
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| 20110233599 | LIGHT-EMITTING DEVICE - According to one embodiment, a light-emitting device includes a semiconductor stacked body and a pad electrode. The semiconductor stacked body has a surface and includes a light-emitting layer. The surface has protruding portions. The pad electrode is provided on one of a top surface of the protruding portions and a bottom surface around the protruding portions. | 09-29-2011 |
| 20120223348 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer. A plurality of apertures penetrates the metal portion along the direction, each of the apertures viewed along the direction having equivalent circle diameters of not less than 10 nanometers and not more than 5 micrometers, and a Schottky barrier is provided between the second semiconductor layer and the metal portion. | 09-06-2012 |
| 20120223355 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a structure, a first electrode layer, and a second electrode layer. The structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode layer is provided on the first semiconductor layer side of the structure. The first electrode layer is made of metal and contains a portion contacting the first semiconductor layer. The second electrode layer is provided on the second semiconductor layer side of the structure. The second electrode layer has a metal portion with a thickness of not less than 10 nanometers and not more than 50 nanometers, and a plurality of openings piercing the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. | 09-06-2012 |
| 20120228654 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes an electrode layer provided on the second semiconductor layer side of the structure. The electrode layer includes a metal portion with a thickness of not less than 10 nanometers and not more than 100 nanometers. A plurality of openings pierces the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. The device includes an inorganic film providing on the metal portion and inner surfaces of the openings, the inorganic film having transmittivity with respect to light emitted from the light emitting layer. | 09-13-2012 |
| 20130075762 | OPTICALLY TRANSMISSIVE METAL ELECTRODE, ELECTRONIC DEVICE, AND OPTICAL DEVICE - According to one embodiment, an optically transmissive metal electrode includes a plurality of first and second metal wires. The first metal wires are disposed along a first direction, and extend along a second direction intersecting the first direction. The second metal wires are disposed along a third direction parallel with a plane including the first and second directions and intersecting the first direction, contact the first metal wires, and extend along a fourth direction parallel with the plane and intersecting the third direction. A first pitch between centers of the first metal wires is not more than a shortest wavelength in a waveband including visible light. A second pitch between centers of the second metal wires exceeds a longest wavelength in the waveband. A thickness of the first and second metal wires along a direction vertical to the plane is not more than the shortest wavelength. | 03-28-2013 |
| 20130075771 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes first and second electrode layers, a and second semiconductor layers, a light emitting layer and a first intermediate layer. The first electrode layer has a metal portion having through-holes. The second electrode layer is stacked with the first electrode layer along a stacked direction, and light-reflective. The first semiconductor layer is provided between the first and second electrode layers, and has a first conductivity type. The second semiconductor layer is provided between the first semiconductor layer and the second electrode layer, and has a second conductivity type. The light emitting layer is provided between the first and second semiconductor layers. The first intermediate layer is provided between the second semiconductor layer and the second electrode layer, transmissive to light emitted from the light emitting layer, and includes first contact portions and a first non-contact portion. | 03-28-2013 |
| 20130075778 | LIGHT-TRANSMITTING METAL ELECTRODE, ELECTRONIC APPARATUS AND LIGHT EMITTING DEVICE - According to one embodiment, a light-transmitting metal electrode includes a metal layer. The metal layer is provided on a major surface of a member and includes a metal nanowire and a plurality of openings formed with the metal nanowire. The thin layer includes a plurality of first straight line parts along a first direction and a plurality of second straight line parts along a direction different from the first direction. A maximum length of the first line parts along the first direction and a maximum length of the second line parts along the direction different from the first direction are not more than a wave length of visible light. A ratio of an area of the metal layer viewed in a normal direction of the surface to an area of the metal layer viewed in the normal direction is more than 20% and not more than 80%. | 03-28-2013 |
| 20130248912 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - According to one embodiment, a semiconductor light emitting element includes a stacked body and an optical layer. The stacked body has a major surface and includes a light emitting layer. The optical layer is in contact with the surface and includes a dielectric body, first particles, and second particles. The optical layer includes a first region including the dielectric body and the first particles and does not include the second particles and a second region including the dielectric body and the second particles. A sphere-equivalent diameter of the first particle is not less than 1 nanometer and not more than 100 nanometers. A sphere-equivalent diameter of the second particle is more than 300 nanometers and less than 1000 nanometers. An average refractive index of the first region is larger than a refractive index of the stacked body and smaller than a refractive index of the second particle. | 09-26-2013 |
| 20140049165 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHTING APPARATUS - A semiconductor light emitting device includes a substrate, a first semiconductor light emitting element and a second semiconductor light emitting element. A first semiconductor light emitting element is provided on the substrate and includes a first layer having a first conductivity type, a first light emitting layer, and a second layer having a second conductivity type. A second semiconductor light emitting element is provided on the substrate and includes a third layer having a second conductivity type, a second light emitting layer, and a fourth layer having a first conductivity type. The first layer and the third layer are electrically connected. A peak emission wavelength of light emitted from the first light emitting layer and a peak emission wavelength of light emitted from the second light emitting layer are substantially same. | 02-20-2014 |
| 20140349421 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes an electrode layer provided on the second semiconductor layer side of the structure. The electrode layer includes a metal portion with a thickness of not less than 10 nanometers and not more than 100 nanometers. A plurality of openings pierces the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. The device includes an inorganic film providing on the metal portion and inner surfaces of the openings, the inorganic film having transmittivity with respect to light emitted from the light emitting layer. | 11-27-2014 |
| 20150072456 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer. A plurality of apertures penetrates the metal portion along the direction, each of the apertures viewed along the direction having equivalent circle diameters of not less than 10 nanometers and not more than 5 micrometers, and a Schottky barrier is provided between the second semiconductor layer and the metal portion. | 03-12-2015 |
| 20150311393 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a structure, a first electrode layer, and a second electrode layer. The structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode layer is provided on the first semiconductor layer side of the structure. The first electrode layer is made of metal and contains a portion contacting the first semiconductor layer. The second electrode layer is provided on the second semiconductor layer side of the structure. The second electrode layer has a metal portion with a thickness of not less than 10 nanometers and not more than 50 nanometers, and a plurality of openings piercing the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. | 10-29-2015 |
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| 20120207814 | AQUEOUS PATCHES CONTAINING DICLOFENAC SODIUM - An aqueous patch containing diclofenac sodium, wherein the patch contains a homogeneous mixed solution of diclofenac sodium, wherein the solution is obtained by mixing crotamiton, diclofenac sodium and water in the mixture ratio of crotamiton/diclofenac sodium of 8.0 or less and the mixture ratio of (water+crotamiton)/diclofenac sodium of 3.0-20.0. | 08-16-2012 |
| 20120283671 | ANTI-INFLAMMATORY ANALGESIC ADHESIVE PATCH FOR EXTERNAL USE - An external patch containing diclofenac hydroxyethylpyrrolidine prepared by laminating an adhesive layer on a backing, wherein said adhesive layer is characterized by comprising 5-50% by weight of styrene•isoprene•styrene block copolymer, 20-50% by weight of a tackifier resin, 5-70% by weight of a softening agent, and 0.5-20% by weight of one or more solubilizers selected from N-methyl-2-pyrrolidone, propylene glycol and dimethyl sulfoxide as essential ingredients, and 0.5-20% by weight of diclofenac hydroxyethylpyrrolidine as an active ingredient. The patch has excellent transdermal absorption, less skin-irritation and excellent stability of the drug. | 11-08-2012 |
| 20130211309 | METHOD FOR USING HYDROGEL SHEET FOR TREATING WOUND - Wound bed preparation in a skin wound area can be carried out by using a hydrogel sheet, wherein the hydrogel sheet is prepared by spreading a hydrogel containing a water-soluble polymer, glycerin, and water on a two-layered laminated film consisting of a polyurethane film and a hydrophobic fiber and the moisture permeability of the hydrogel sheet is 200-2000 (g/m | 08-15-2013 |
| 20140171555 | Water-Based Plaster - Provided is a water-based plaster in which the gel strength is maintained to an appropriate level in a step of producing the water-based plaster, and particularly in a spreading step and an aging step, and a final preparation can exhibit an optimal adhesiveness for adhering to the skin. In the water-based plaster, a water-based adhesive base containing a water-soluble polymer as a main ingredient contains a higher fatty acid which is a liquid at room temperature and a viscosity of 1,000 (mPa·s, 20° C.) or more as a crosslinking modifier. The higher fatty acid is isostearic acid, and the contained amount thereof is 1 to 10% by weight. | 06-19-2014 |
| 20140179734 | ADHESIVE SKIN PATCH CONTAINING SEROTONIN RECEPTOR ANTAGONIST DRUG - Provided is a transdermal absorption-type patch containing a serotonin receptor antagonist, which has a short transdermal absorption delay time (lag time), and in which the maximum transdermal permeation rate of the drug can be reached within a short time and the drug can disappear from circulating blood rapidly. That is, provided is a patch containing a serotonin receptor antagonist, wherein the patch contains an adhesive layer comprising a non-functional acrylic adhesive, a water-soluble organic amine, a fatty acid ester, and a serotonin receptor antagonist such as granisetron as an active ingredient. | 06-26-2014 |
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| 20090023583 | PHOTOCATALYST MATERIAL, PHOTOCATALYST COMPOSITION USING THE SAME AND PHOTOCATALYST PRODUCT - An object of the invention is to provide a photocatalyst material having a higher catalyst effect than conventional photocatalyst materials. The photocatalyst material of the invention contains, as its major component, a tungsten oxide powder excited by a light source which emits light having a wavelength of 430 to 500 nm, the photocatalyst material having a decomposition ability of 50% or more wherein the decomposition ability is given by the following equation based on the following test: | 01-22-2009 |
| 20100270470 | INFRARED RAY DETECTOR AND ELECTRICAL APPARATUS - The present invention provides an infrared ray detector capable of facilitating design of a compound lens and capable of reliably detecting a heat source in a stabilized state, which is provided with a light receiving portion for detecting infrared ray energies, and a compound lens having a plurality of lens portions to condense an infrared ray in a predetermined detection area to the light receiving portion, wherein individual detection areas which condense infrared rays to the light receiving portion through the respective lens portions of the compound lens exist in the entire range of a predetermined detection area, and at least a part of the individual detection areas overlap each other. | 10-28-2010 |
| 20150062923 | Light-Emitting Module and Lighting System - A light-emitting module according to an embodiment includes a light-emitting element which emits light and a substrate on which the light-emitting element is mounted. Further, the light-emitting module according to the embodiment includes a lens, which is formed from a material containing an aliphatic hydrocarbon organic compound having a cyclic structure in the main backbone, and is disposed on the substrate so as to cover the light-emitting element, and in which on a portion irradiated with light emitted by the light-emitting element, the maximum illuminance of the light is 100,000 lx or more and 300,000 lx or less or the maximum energy per unit area of the light is 30,000 μW/cm | 03-05-2015 |
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| 20110159207 | METHOD FOR PRODUCING BUILD-UP SUBSTRATE - A method for producing a build-up substrate containing two layers of wiring patterns that are separated from each other with an insulating film intervening therebetween and are electrically connected to each other at a contact part penetrating through the insulating film, includes: ejecting a liquid repelling agent having repellency to an ink for forming the insulating film from a liquid droplet ejecting head onto one of the wiring patterns, thereby forming a liquid repelling part; then ejecting the ink for forming the insulating film from a liquid droplet ejecting head onto portions on the wiring pattern except for the liquid repelling part provided, thereby forming the insulating film; then removing the liquid repelling part; and then forming the contact part and the other of the wiring patterns by electroless plating. | 06-30-2011 |
| 20110174528 | METHOD OF FORMING CIRCUIT INTERCONNECTION, CIRCUIT BOARD, AND CIRCUIT INTERCONNECTION FILM HAVING FILM THICKNESS LARGER THAN WIDTH THEREOF - A method of forming a circuit interconnection on a circuit board includes: forming a trench that corresponds to a shape of the circuit interconnection on an interconnection base material that forms the circuit interconnection; distributing a catalyst for forming a conductive layer on the trench; and forming a conductive circuit interconnection film that forms the circuit interconnection by distributing a plating solution in a range that includes the trench and depositing a conductive material from the plating solution through the catalyst for forming the conductive layer. | 07-21-2011 |
| 20110180313 | METHOD OF FORMING CIRCUIT INTERCONNECTION, CIRCUIT BOARD, AND CIRCUIT INTERCONNECTION FILM HAVING FILM THICKNESS LARGER THAN WIDTH THEREOF - A method of forming a circuit interconnection on a circuit board includes: forming a trench that corresponds to a shape of the circuit interconnection on an interconnection base material that forms the circuit interconnection; performing a liquid repellent process of at least the base material surface of the interconnection base material and a side wall surface of the trench with respect to a liquid body that includes a catalyst for forming a conductive layer; distributing the liquid body that includes the catalyst for forming a conductive layer on the trench; and forming a conductive circuit interconnection film that forms the circuit interconnection by distributing a plating solution in a range that includes the trench and depositing a conductive material from the plating solution through the catalyst for forming the conductive layer. | 07-28-2011 |
| 20130264109 | ELECTRONIC DEVICE, ELECTRONIC APPARATUS, AND METHOD OF MANUFACTURING ELECTRONIC DEVICE - An electronic device has a vibrating element and a package accommodating the vibrating element. Moreover, the package has through-electrodes formed to penetrate a base substrate in its thickness direction and electrically connected with connection terminals, and electrically conductive adhesives (covering members) formed above the connection terminals so as to contain the through-electrodes. | 10-10-2013 |
| 20140003004 | METHOD FOR PRODUCING BASE SUBSTRATE, METHOD FOR PRODUCING ELECTRONIC DEVICE, BASE SUBSTRATE, AND ELECTRONIC APPARATUS | 01-02-2014 |
| 20140049927 | METHOD FOR PRODUCING PACKAGE, METHOD FOR PRODUCING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE - A method for producing a package includes preparing a base substrate provided with a low-melting glass and a lid, defoaming the low-melting glass by heating the low-melting glass to a temperature equal to or higher than the pour point in a reduced pressure atmosphere, and joining the base substrate and the lid to each other by superimposing the base substrate and the lid on each other through the low-melting glass, and then heating the low-melting glass to a temperature equal to or higher than the pour point in a reduced pressure atmosphere. | 02-20-2014 |
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| 20140256156 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device, includes treating a surface of an insulating film formed on a substrate by supplying a first precursor including a predetermined element and a halogen group to the substrate; and forming a thin film including the predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times, the cycle comprising: supplying a second precursor including the predetermined element and the halogen group to the substrate; and supplying a third precursor to the substrate. | 09-11-2014 |
| 20140287599 | SUBSTRATE PROCESSING APPARATUS, PROCESS CONTAINER, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided are a substrate processing apparatus, a process container and a method of manufacturing a semiconductor device capable of improving the quality of a thin film by stabilizing conditions of heating a substrate when the thin film is formed on the substrate heated using a heating unit installed outside the process container. The substrate processing apparatus includes a process container in which processing to a substrate is performed; a heating unit disposed outside the process container and configured to emit a radiant heat so as to heat the substrate in the process container; and a source gas supply system configured to supply a source gas into the process container, wherein the process container includes a heat absorbing layer disposed on at least a portion of an outer wall of the process container and configured to absorb the radiant heat and cause a saturation of absorption of the radiant heat. | 09-25-2014 |
| 20140349492 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM - A semiconductor device manufacturing method includes forming a thin film containing silicon, oxygen, carbon and a specified Group III or Group V element on a substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor gas containing silicon, carbon and a halogen element and having an Si—C bonding and a first catalytic gas to the substrate; supplying an oxidizing gas and a second catalytic gas to the substrate; and supplying a modifying gas containing the specified Group III or Group V element to the substrate. | 11-27-2014 |
| 20140370692 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - Provided is a method of manufacturing a semiconductor device, which is capable of increasing the controllability of the concentration of carbon in a film by increasing the yield when a boron carbonitride film or a boron nitride film is formed. The method includes forming a film containing boron, carbon and nitrogen or a film containing boron and nitrogen on the substrate by performing, a predetermined number of times, a cycle including supplying a source gas consisting of boron and a halogen element to a substrate and supplying a reactive gas consisting of carbon, nitrogen and hydrogen to the substrate. | 12-18-2014 |
| 20150255269 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device is provided. The method includes treating a surface of an insulating film formed on a substrate by supplying a first gas containing a halogen group to the substrate, and forming a thin film containing a predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times. The cycle includes supplying a second gas containing the predetermined element and a halogen group to the substrate, and supplying a third gas to the substrate. | 09-10-2015 |
| 20150275357 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a method of manufacturing a semiconductor device wherein a cleaning process on the inside of an exhaust buffer chamber may be performed sufficiently and satisfactorily even if gases are exhausted using the exhaust buffer chamber. The method includes: (a) processing a substrate placed on a substrate placing surface in a processing space by supplying gases onto the substrate in the processing space through a side facing the substrate placing surface while exhausting the gases from the processing space using an exhaust buffer chamber including a space surrounding an outer circumference of a side portion of the processing space; and (b) cleaning and inside of the exhaust buffer chamber by supplying a cleaning gas into the exhaust buffer chamber through a cleaning gas supply pipe communicating with the space of the exhaust buffer chamber. | 10-01-2015 |
| 20160060755 | SUBSTRATE PROCESSING APPARATUS - There is provided a substrate processing apparatus. The substrate processing apparatus includes a processing space configured to process a substrate placed on a substrate receiving surface on a substrate support, a gas supply system configured to supply gases into the processing space from the opposite side of the substrate receiving surface, an exhaust buffer chamber including a communication hole communicating with the processing space at least at a side portion of the processing space and a gas flow blocking wall extending in a blocking direction of the gases flowing through the communication hole, and a first heating element configured to heat the exhaust buffer chamber. | 03-03-2016 |
| 20160064219 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A technique includes loading a substrate into a process chamber, supporting the substrate by a mounting table having a heater therein in the process chamber, forming a film on the substrate by supplying a processing gas into the process chamber in a state where the mounting table having the substrate supported thereon is disposed in a first position and the heater is turned on, unloading the substrate on which the film is formed, and supplying a reactive gas into the process chamber in a state where the mounting table is disposed in a second position and the heater is turned on. The second position is closer to a ceiling portion in the process chamber than the first position. | 03-03-2016 |
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| 20100136773 | Semiconductor Device Manufacturing Method and Substrate Processing Apparatus - A semiconductor device manufacturing method comprises the steps of loading a substrate into a processing chamber, mounting the substrate on a support tool in the processing chamber, processing the substrate mounted on the support tool by supplying process gas into the processing chamber, purging the interior of the processing chamber after the substrate processing step, and unloading the processed substrate from the processing chamber after the step of purging the interior of the processing chamber, wherein in the step of purging the interior of the processing chamber, exhaust is performed toward above the substrate and toward below the substrate in the processing chamber, and the exhaust rate toward above the substrate is set larger than the exhaust rate toward below the substrate. | 06-03-2010 |
| 20110230057 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, AND SUBSTRATE PROCESSING APPARATUS - An excellent type of a film is realized by modifying conventional types of films. A carbonitride film of a predetermined thickness is formed on a substrate by performing, a predetermined number of times, a cycle including the steps of: supplying a source gas into a process vessel accommodating the substrate under a condition where a CVD reaction is caused, and forming a first layer including an element on the substrate; supplying a carbon-containing gas into the process vessel to form a layer including carbon on the first layer, and forming a second layer including the element and the carbon; supplying the source gas into the process vessel under a condition where a CVD reaction is caused to additionally form a layer including the element on the second layer, and forming a third layer including the element and the carbon; and supplying a nitrogen-containing gas into the process vessel to nitride the third layer, and forming a carbonitride layer serving as a fourth layer including the element, the carbon, and nitrogen. | 09-22-2011 |
| 20110256733 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS - An insulating film having features such as a low dielectric constant, a low etching rate and a high insulating property is formed. An oxycarbonitride film having a predetermined thickness is formed on a substrate in a process vessel by performing a cycle a predetermined number of times, wherein the cycle includes steps of: (a) performing a set of steps a predetermined number of times to form a carbonitride layer having a predetermined thickness on the substrate; and (b) supplying an oxygen-containing gas into the process vessel to oxidize the carbonitride layer having the predetermined thickness, thereby forming an oxycarbonitride layer, wherein the set of steps includes: (a-1) supplying a gas containing an element into the process vessel accommodating the substrate under a condition where a CVD reaction is caused to form a layer containing the element on the substrate; (a-2) supplying a carbon-containing gas into the process vessel to form a carbon-containing layer on the layer containing the element, thereby forming a layer including the element and a carbon; and (a-3) supplying a nitrogen-containing gas into the process vessel to nitride the layer including the element and the carbon, thereby forming the carbonitride layer. | 10-20-2011 |
| 20120184110 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS - An insulating film including characteristics such as low permittivity, a low etching rate and a high insulation property is formed. Supplying a gas containing an element, a carbon-containing gas and a nitrogen-containing gas to a heated substrate in a processing vessel to form a carbonitride layer including the element, and supplying the gas containing the element and an oxygen-containing gas to the heated substrate in the processing vessel to form an oxide layer including the element are alternately repeated to form on the substrate an oxycarbonitride film having the carbonitride layer and the oxide layer alternately stacked therein. | 07-19-2012 |
| 20140024225 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS - An insulating film having features such as a low dielectric constant, a low etching rate and a high insulating property is formed. An oxycarbonitride film is formed on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a gas containing an element to the substrate; (b) supplying a carbon-containing gas to the substrate; (c) supplying a nitrogen-containing gas to the substrate; and (d) supplying an oxygen-containing gas to the substrate. | 01-23-2014 |
| 20140287595 | Method of Manufacturing Semiconductor Device, Substrate Processing Apparatus, Substrate Processing System and Non-Transitory Computer-Readable Recording Medium - A thin film having excellent etching resistance and a low dielectric constant is described. A method of manufacturing a semiconductor device includes forming a thin film on a substrate, removing first impurities containing H | 09-25-2014 |
| 20150101755 | SUBSTRATE PROCESSING APPARATUS - An insulating film having features such as a low dielectric constant, a low etching rate and a high insulating property is formed. An oxycarbonitride film is formed on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a gas containing an element to the substrate; (b) supplying a carbon-containing gas to the substrate; (c) supplying a nitrogen-containing gas to the substrate; and (d) supplying an oxygen-containing gas to the substrate. | 04-16-2015 |
