Patent application number | Description | Published |
20100140570 | Sintered Compact of Composite Oxide, Amorphous Film of Composite Oxide, Process for Producing said Film, Crystalline Film of Composite Oxide and Process for Producing said Film - Provided is an amorphous film substantially comprised of indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen. The film can be further crystallized by annealing at a temperature of 260° C. or lower in which resistivity of the film will be 0.4 mΩcm or less. An ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film is characterized in that it will crystallize by annealing at a temperature of 260° C. or less, which is not such a high temperature, and have low resistivity after being crystallized. Thus, the present invention aims to provide a method of producing such a film and a sintered compact for producing such a film. | 06-10-2010 |
20120103804 | Oxide Sintered Compact, Its Production Method, and Raw Material Powder for Producing Oxide Sintered Compact - An oxide sintered compact made of indium (In), gallium (Ga), zinc (Zn) and oxygen (O) and represented by a formula of InxGayZnzOa [wherein x/(x+y) is 0.2 to 0.8, z/(x+y+z) is 0.1 to 0.5, and a=(3/2)x+(3/2)y+z], wherein the concentration of volatile impurities contained in the oxide sintered compact is 20 ppm or less. Provided is technology for application to the production of an IGZO target capable of achieving high densification and low bulk resistance of the sputtering target, preventing swelling and cracks of the target during the production process, minimizing the generation of nodules, inhibiting abnormal discharge, and enabling DC sputtering. | 05-03-2012 |
20120319057 | Sintered Compact, Amorphous Film and Crystalline Film of Composite Oxide, and Process for Producing the Films - An amorphous film comprising indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen, is provided. The film can be crystallized by annealing at 260° C. or lower in which resistivity of the film will be 0.4 mΩcm or less. In this manner, an ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film can be crystallized by annealing at a low temperature and will have low resistivity. Methods of producing such films and sintered compacts are provided. | 12-20-2012 |