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| 20150047194 | TUBE EXPANSION METHOD - A tube expansion method of fixing a heat exchanger tube inserted to a tube hole of a tubesheet by tube expansion including: when there is a groove along a circumferential direction with respect to an inner circumferential surface in the middle axis of an axis direction of the tube hole, a first hydraulic tube expansion step of performing hydraulic tube expansion at a pressure of 15% and 70% in a range including the groove, and thereafter, a second hydraulic tube expansion step of performing each liquid tube expansion at a pressure of 100% in each range divided except the groove. | 02-19-2015 |
| 20150082606 | TUBE EXPANSION METHOD - A tube expansion method of mounting a drain tube as tube member by insertion and expansion to a through hole in which opening portions at both ends are obliquely formed, the method including: inserting the drain tube to the through hole so that the end portions protrude from the opening portions at both ends of the through hole; inserting a tube expander into the drain tube to expand the drain tube up to a predetermined inner diameter while moving the tube expander to the other end portion from one end portion of the drain tube; cutting each end portion of the tube member protruding from each opening portion of the through hole along an oblique shape of each opening portion; and welding the cut end portion of the drain tube and the opening portion of the through hole. | 03-26-2015 |
| 20150298235 | WELDING METHOD AND STEAM GENERATOR CHANNEL HEAD - A welding method for making cladding or buttering on an inner surface of a base material, an inner surface of an opening portion formed in the base material, and the cut surface formed in such a manner that the cut surface is continuous from the inner surface of the base material to the inner surface of the opening portion, wherein the welding method includes a step of forming a protruding portion on the base material in advance, the protruding portion including a temporary welding surface extending toward the center of the opening portion in such a manner that the temporary welding surface is uniformly continuous to the inner surface of the base material and including the cut surface buried therein. | 10-22-2015 |
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| 20120224875 | FIXING APPARATUS - The present disclosure is directed to enhance thermal efficiency of a fixing apparatus while a belt of the apparatus is heated, the fixing apparatus including: a belt including a plurality of heaters therein; a nip forming member that contacts with an inner surface of the belt; and a pressure member that forms a nip portion in conjunction with the nip forming member through the belt, wherein a ratio of an amount of heat generation by a heater farther from the nip portion to another heater closer to the nip portion is changed according to a speed at which a recording material is conveyed. | 09-06-2012 |
| 20140321873 | IMAGE FORMING APPARATUS - An image forming apparatus includes a fixing portion, including a heating member and a back-up member forming a nip; and an air feeding portion for feeding air to a non-sheet-passing area of at least one of the heating member and the back-up member, the air feeding portion including a fan for feeding the air, a duct, including an opening, for guiding the air fed from the fan through the opening to the non-sheet-passing area, and an adjusting member for adjusting an opening amount of the opening. The apparatus executes a first air feeding operation with a first opening amount and a first rotational frequency of the fan and a second air feeding operation with a second opening amount and a second rotational frequency, when the fixing portion fixes the images on sheets having the same widths. | 10-30-2014 |
| 20150055968 | IMAGE HEATING APPARATUS - An image heating apparatus includes a rotatable member; a first heater and a second heater, for heating the rotatable member, wherein a ratio of a heat generation amount of the second heater at a end portion thereof to that at a central portion thereof is larger than that of the second heater at a end portion thereof to that at a central portion thereof with respect to the generatrix direction; a back-up member; a sensor, and an electric power supply controller capable of controlling the first heater and the second heater, independently. The controller effects switching to decrease a ratio of the power to the second heater to the power to the first heater, when heating a small width sheet. Immediately after the switching, the power to the second heater is smaller and the power to the first heater is larger than those immediately before the switching. | 02-26-2015 |
| 20150309454 | IMAGE FORMING APPARATUS - An image forming apparatus includes a fixing portion, including: a heating member and a back-up member forming a nip; and an air feeding portion for feeding air to a non-sheet-passing area of at least one of the heating member and the back-up member, the air feeding portion including a fan for feeding the air, a duct, including an opening, for guiding the air fed from the fan through the opening to the non-sheet-passing area, and an adjusting member for adjusting an opening amount of the opening. The apparatus executes a first air feeding operation with a first opening amount and a first rotational frequency of the fan and a second air feeding operation with a second opening amount and a second rotational frequency, when the fixing portion fixes the images on sheets having the same widths. | 10-29-2015 |
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| 20140162122 | COLLECTOR AND ELECTRODE STRUCTURE, NON-AQUEOUS ELECTROLYTE CELL, ELECTRICAL DOUBLE LAYER CAPACITOR, LITHIUM ION CAPACITOR, OR ELECTRICITY STORAGE COMPONENT USING SAME - An object of the present invention is to improve an adhesion between the surface of a conductive resin layer and an active material, which are provided to a current collector. Another object of the present invention is to improve a high rate characteristics or electrode lifetime of a non-aqueous electrolyte battery, an electrical double layer capacitor, a lithium ion capacitor and the like which uses the current collector. A current collector prepared by forming a resin layer possessing conductivity on a conductive substrate, is provided. A surface roughness Ra of the resin layer possessing conductivity is 0.1 μm or higher and 1.0 μm or lower. In addition, when a coating thickness of the resin layer possessing conductivity is taken as t [μm] and the average angle of inclination of the resin layer surface is taken as θa [degree], (⅓)t+0.5≦θa≦(⅓)t+10 is met. | 06-12-2014 |
| 20140170488 | COLLECTOR, ELECTRODE STRUCTURE, NON-AQUEOUS ELECTROLYTE CELL, AND ELECTRICITY STORAGE COMPONENT - An object of the present invention is to provide a current collector which can decrease the internal resistance of a non-aqueous electrolyte battery, be used suitably for a non-aqueous electrolyte battery such as a lithium ion secondary battery and the like or for an electrical storage device such as a lithium ion capacitor and the like, and improve high rate characteristics. According to the present invention, a current collector which is structured by forming a resin layer possessing conductivity on at least one side of a conductive substrate is provided. The resin layer contains a chitosan-based resin and a conductive material, and the water contact angle of the surface of the resin layer measured by θ/2 method in a thermostatic chamber at 23° C. is 5 degrees or more and 60 degrees or less. In addition, an electrode structure, a non-aqueous electrolyte battery, and an electrical storage device which use the current collector are provided. | 06-19-2014 |
| 20140178766 | COLLECTOR AND ELECTRODE STRUCTURE, NON-AQUEOUS ELECTROLYTE CELL, ELECTRICAL DOUBLE LAYER CAPACITOR, LITHIUM ION CAPACITOR, OR ELECTRICAL STORAGE DEVICE USING SAME - Provided is a technique to confirm the performance of the conductive resin layer of a current collector without actually preparing an electrode structure, a non-aqueous electrolyte battery, an electrical double layer capacitor, a lithium ion capacitor, or an electrical storage device, and to confirm the performance of the conductive resin layer easily with high accuracy by a non-destructive test. A current collector includes a conductive substrate and a resin layer possessing conductivity, the resin layer being formed on at least one side of the conductive substrate. The resin layer possessing conductivity contains a resin and a conductive material containing carbon as a main component. When the color tone of the surface of the resin layer possessing conductivity is specified with L*a*b* color system, L* is 60 or lower, a* is −1.0 to 1.0, and b* is −1.0 to 3.0. | 06-26-2014 |
| 20140255788 | COLLECTOR, ELECTRODE STRUCTURE, NON-AQUEOUS ELECTROLYTE BATTERY, AND ELECTRICAL STORAGE DEVICE - An object of the present invention is to provide a current collector which includes an aluminum alloy foil for electrode current collector, with high electrical conductivity and high strength after a drying process performed after application of an active material. According to the present invention, provided is a current collector including a conductive substrate and a resin layer provided on one side or both sides of the conductive substrate, wherein: the conductive substrate is an aluminum alloy foil containing 0.03 to 1.0 mass % (hereinafter mass % is referred to as %) of Fe, 0.01 to 0.3% of Si, 0.0001 to 0.2% of Cu, with the rest being Al and unavoidable impurities, an aluminum alloy foil after a final cold rolling having a tensile strength of 180 MPa or higher, a 0.2% yield strength of 160 MPa or higher, and an electrical conductivity of 58% IACS or higher; an aluminum alloy foil after performing a heat treatment at 120° C. for 24 hours, at 140° C. for 3 hours, or at 160° C. for 15 minutes after the final cold rolling having a tensile strength of 170 MPa or higher, and a 0.2% yield strength of 150 MPa or higher; the resin layer includes a resin containing an acryl-based resin, a soluble nitrocellulose-based resin or a chitosan-based resin, and a conductive material; and a water contact angle of the resin layer surface measured by θ/2 method in a thermostatic chamber at 23° C. is 30 degrees or more and 105 degrees or less when the resin is the acryl-based resin, 100 degrees of more and 110 degrees or less when the resin is the soluble nitrocellulose-based resin, and 20 degrees or more and 50 degrees or less when the resin is the chitosan-based resin. | 09-11-2014 |
| 20140315094 | CURRENT COLLECTOR, ELECTRODE STRUCTURE, NONAQUEOUS ELECTROLYTE BATTERY, ELECTRICAL STORAGE DEVICE, AND NITROCELLULOSE RESIN MATERIAL - A current collector which is suitable for discharging and charging at a large current density is provided. The present invention provides a current collector including a conductive substrate and a conductive resin layer provided on one side or both sides of the conductive substrate. The conductive resin layer contains a soluble nitrocellulose-based resin and a conductive material. | 10-23-2014 |
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| 20160058588 | ARTIFICIAL BLOOD VESSEL - An artificial blood vessel includes a tubular woven fabric composed of a multifilament yarn A including a first polyester and a multifilament yarn B including a second polyester, and has an inner diameter of 8 mm or less and a layer thickness of 50 μm or more and 250 μm or less, wherein the multifilament yarn A has a single fiber fineness of 1.0 dtex or more and a total fineness of 33 dtex or less, the multifilament yarn B has a single fiber fineness of 0.08 dtex or less and a total fineness of 66 dtex or less, and the multifilament yarn B forms loops on an inner wall surface of the tubular woven fabric. | 03-03-2016 |
| 20160067065 | ANTITHROMBOTIC ARTIFICIAL BLOOD VESSEL - An artificial blood vessel is a tubular fabric including a fiber layer containing an ultrafine fiber(s) and an ultrafine fiber layer in the inside of the fiber layer, the ultrafine fiber layer being composed of an ultrafine fiber(s) having a fiber diameter(s) of not less than 10 nm and not more than 3 μm, wherein a quaternary ammonium group-containing polymer having alkyl groups each of a carbon number 10 or less is covalently bound to the ultrafine fiber(s); heparin is ionically bound to the quaternary ammonium group-containing polymer; and the residual heparin activity after washing with physiological saline at 37° C. for 30 minutes is 20 mIU/cm2 or more. | 03-10-2016 |
| 20160067066 | ANTITHROMBOTIC ARTIFICIAL BLOOD VESSEL - An artificial blood vessel promotes intimal formation after indwelling, and is capable of maintaining antithrombogenicity during the intimal formation and maintaining its patency for a long time. The artificial blood vessel is a tubular fabric including a fiber layer containing an ultrafine fiber(s) and an ultrafine fiber layer in the inside of the fiber layer, the ultrafine fiber layer being composed of an ultrafine fiber(s) having a fiber diameter(s) of 10 nm to 3 μm, wherein an antithrombin agent having a polymer chain other than heparin is covalently bound to the ultrafine fiber via the polymer chain, and the thrombin activity inhibition rate on the fiber surface at 37° C. is not less than 60%. | 03-10-2016 |
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| 20120013654 | DISPLAY PANEL AND DISPLAY DEVICE - A liquid crystal display panel ( | 01-19-2012 |
| 20120019740 | DISPLAY PANEL AND DISPLAY DEVICE - Disclosed is a liquid crystal display panel wherein the utilization efficiency of light can be improved, while suppressing deterioration of the contrast. Specifically, a color filter ( | 01-26-2012 |
| 20120087107 | DISPLAY PANEL AND DISPLAY DEVICE - A red color filter ( | 04-12-2012 |
| 20130002986 | DISPLAY DEVICE - A display device includes: a light source unit configured to emit light from a light emitting surface; and a phosphor layer ( | 01-03-2013 |
| 20140321101 | COLOR CONVERSION SUBSTRATE, DISPLAY DEVICE, AND COLOR CONVERSION SUBSTRATE FABRICATING METHOD - A color conversion substrate includes a main plate having a first main surface and including a transparent substrate, and a fluorescent material layer including a light scattering layer formed at the first main surface for scattering incident light and emitting the light outside, and having a hole formed, and a fluorescent material body formed in said hole, exhibiting luminescence emission when light of an incident wavelength region is incident. The inner surface of the light scattering layer defining the hole reflects the light from the fluorescent material body output from the fluorescent material body towards the main plate. | 10-30-2014 |
| 20150062870 | DISPLAY DEVICE - The purpose of the present invention is to provide a display device in which light emitted from a phosphor is used with enhanced efficiency. A display device is provided with a light source unit for emitting light, a plurality of phosphors for emitting light upon incidence thereon of light from the light source unit, a transparent substrate disposed on the phosphors, a color conversion substrate formed between the phosphors and the transparent substrate and including a reflective member and a low refractive index layer having a refractive index lower than that of the phosphors, and an air layer between the phosphors and the light source unit. | 03-05-2015 |
| 20150124188 | COLOR-CONVERTING SUBSTRATE AND LIQUID CRYSTAL DISPLAY DEVICE - A color conversion substrate and liquid crystal display device of the present invention simplify the manufacturing process thereof and reduce deviations in intensity distribution of emitted light. The color conversion substrate includes a transparent substrate having a first main surface, a phosphor layer having a plurality of phosphors arranged along the first main surface and a plurality of transparent first boundary parts formed so as to surround the respective phosphors, and a plurality of first reflective parts formed on the outer peripheral surface of the respective plurality of first boundary parts. The portions of the first boundary parts where the respective first reflective parts are formed are curved, and the curvature thereof is 0.50/d | 05-07-2015 |
| 20150131029 | COLOR CONVERSION SUBSTRATE, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE - A color conversion substrate that can improve light use efficiency is provided. A color conversion substrate includes a transparent substrate having a main surface, a plurality of phosphor patterns arranged on the main surface and each of the phosphor patterns having side faces, and a reflective film that reflects light and is formed on at least the side faces of the phosphor patterns. An air layer is defined between the main surface and the phosphor patterns. | 05-14-2015 |
| 20160077382 | LIGHTING DEVICE - An illumination device includes a light source that emits primary light and a wavelength conversion element that converts at least a portion of the primary light from the light source. The wavelength conversion element includes a phosphor layer having phosphors that absorb at least a portion of the primary light from the light source to emit secondary light, which is polarized, and polymers having birefringence. The phosphors have an anisotropic structure and are aligned generally along a first direction, and the polymers have polymer molecules that are aligned generally along the first direction. An angle formed by a direction of a transition dipole moment of each of the phosphors to a delayed phase axis of each of the polymer molecules with respect to the secondary light emitted from the phosphors towards the polymer molecules is 0° to 45°. | 03-17-2016 |
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| 20120271848 | Dynamic Highlighting of Geographic Entities on Electronic Maps - Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, can be used to dynamically generate electronic maps with highlighted entity boundaries. In one aspect, a method includes receiving a request for an electronic map segment for a geographic region, with the request identifying a geographic entity to be highlighted in the requested electronic map segment. A plurality of layers of map data associated with the geographic region and data defining a boundary of the identified geographic entity are retrieved in response to the request. The electronic map segment is rendered based on the retrieved plurality of layers of map data and the data defining the boundary of the geographic entity, with one or more of the retrieved layers are rendered over a rendering of a highlighted boundary of the geographic entity. The rendered electronic map segment is transmitted in response to the request. | 10-25-2012 |
| 20150377630 | Dynamic Highlighting of Geographic Entities on Electronic Maps - Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, can be used to dynamically generate electronic maps with highlighted entity boundaries. In one aspect, a method includes receiving a request for an electronic map segment for a geographic region, with the request identifying a geographic entity to be highlighted in the requested electronic map segment. A plurality of layers of map data associated with the geographic region and data defining a boundary of the identified geographic entity are retrieved in response to the request. The electronic map segment is rendered based on the retrieved plurality of layers of map data and the data defining the boundary of the geographic entity, with one or more of the retrieved layers are rendered over a rendering of a highlighted boundary of the geographic entity. The rendered electronic map segment is transmitted in response to the request. | 12-31-2015 |
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| 20130181798 | POWER SUPPLY APPARATUS AND ITS MANUFACTURING METHOD - A power supply apparatus is configured to supply power to a load mounted on a vehicle. The power supply apparatus includes a case and a transformer disposed inside the case in a fixed manner. The transformer includes a base made of a resin and fixed to the case, a core attached to the base, a winding wound on the core, and a metal terminal attached to the base. The metal terminal has a solder connection portion to which an end portion of the winding is soldered. The base has a resin melted portion adhered, after being melted, to a portion of the metal terminal. | 07-18-2013 |
| 20150070923 | VEHICULAR LAMP - A vehicular lamp includes: a circuit board having three or more light source mounting portions provided along a vehicle-width direction; a plurality of light sources mounted on the respective light source mounting portions; and a reflector unit having three or more reflectors each reflecting light from each of the light sources. The reflector unit has a first positioning pin and a second positioning pin. The circuit board has a first positioning hole to receive the first positioning pin and a second positioning hole to receive the second positioning pin. The first positioning hole is provided at a location inward of a first end light source mounting portion positioned on one end side in the vehicle-width direction, and the second positioning hole is provided at a position inward of a second end light source mounting portion positioned on the other end side in the vehicle-width direction. | 03-12-2015 |
| 20150070924 | PRINTED CIRCUIT BOARD AND VEHICULAR LAMP - A printed circuit board on which a surface mount device is mounted includes a plurality of lands respectively soldered to a plurality of electrodes of the surface mount device. The plurality of lands includes at least a pair of adjacent lands each of which has a side surface not covered with a solder resist, and the side surfaces not covered with the solder resists are opposite to each other. | 03-12-2015 |
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| 20120121914 | CURABLE RESIN COMPOSITION, TRANSPARENT LAMINATE, AND PROCESS FOR PRODUCING TRANSPARENT LAMINATE - A transparent laminate having good transparency and good adhesion to transparent substrates, and containing a cured resin layer having excellent tear resistance. A process of producing a transparent laminate by interposing a curable resin composition containing an unsaturated urethane oligomer (A) which is a reaction product of a polyol component (A1) containing a polyol (a1) having from 2 to 3 hydroxy groups, a hydroxy value of 15 to 30 mgKOH/g and an oxyethylene group content of 8 to 50 mass %, a polyisocyanate (A2) and an unsaturated hydroxy compound (A3) or a reaction product of a polyol component (A1) and an unsaturated isocyanate (A4), and a monomer (B) represented by CH | 05-17-2012 |
| 20120211080 | CURABLE RESIN COMPOSITION FOR FORMING SEAL PART, LAMINATE AND PROCESS FOR ITS PRODUCTION - To provide a curable resin composition for forming a seal part, which is capable of easily forming a continuous seal part and which is capable of maintaining the shape of the seal part during a period of from immediately after the formation of an uncured seal part until a liquid material is supplied to a region enclosed by the seal part and the seal part is cured, and a laminate which has minimal defects and whereby a resin layer interposed between first and second plates can be made thick. One having a viscosity of from 500 to 3,000 Pa·s at 25° C. is used as the curable resin composition for forming a seal part to form an uncured seal part 12 enclosing the periphery of a liquid material (curable resin composition | 08-23-2012 |
| 20130306236 | CURABLE RESIN COMPOSITION FOR FORMING SEAL PART, LAMINATE AND PROCESS FOR ITS PRODUCTION - To provide a curable resin composition for forming a seal part, which is capable of easily forming a continuous seal part and which is capable of maintaining the shape of the seal part during a period of from immediately after the formation of an uncured seal part until a liquid material is supplied to a region enclosed by the seal part and the seal part is cured, and a laminate which has minimal defects and whereby a resin layer interposed between first and second plates can be made thick. One having a viscosity of from 500 to 3,000 Pa·s at 25° C. is used as the curable resin composition for forming a seal part to form an uncured seal part | 11-21-2013 |
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| 20140284770 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The method of manufacturing a semiconductor device according to the present invention includes: a step of forming a semiconductor laminate on a growth substrate with a lift-off layer therebetween; a step of providing grooves in a grid pattern in the semiconductor laminate, thereby forming a plurality of semiconductor structures each having a nearly quadrangular transverse cross-sectional shape; a step of forming a conductive support body; and a step of removing the lift-off layer using a chemical lift-off process, in which step, in supplying an etchant to the grooves via through-holes provided in a portion above the grooves, the lift-off layer is etched from only one side surface of each semiconductor structure. | 09-25-2014 |
| 20140319557 | VERTICALLY STRUCTURED GROUP III NITRIDE SEMICONDUCTOR LED CHIP AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a vertically structured Group III nitride semiconductor LED chip includes a first step of forming a light emitting structure laminate; a second step of forming a plurality of separate light emitting structures by partially removing the light emitting structure laminate to partially expose the growth substrate; a third step of forming a conductive support, which conductive support integrally supporting the light emitting structures; a fourth step of separating the growth substrate by removing the lift-off layer; and a fifth step of dividing the conductive support between the light emitting structures thereby singulating a plurality of LED chips each having the light emitting structure. A first through-hole is formed to open in a central region of each of the light emitting structures such that at least the lift-off layer is exposed, and an etchant is supplied from the first through-hole in the fourth step. | 10-30-2014 |
| 20150187887 | III NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a III nitride semiconductor device higher heat dissipation performance, and a method of manufacturing a III nitride semiconductor device which makes it possible to fabricate such a III nitride semiconductor device at higher yield. In a method of a III nitride semiconductor device, a semiconductor structure obtained by sequentially stacking an n-layer, an active layer, and a p-layer is formed on a growth substrate; a support body including a first support electrically connected to an n-layer to serve as an n-side electrode, a second support electrically connected to a p-layer to serve as a p-side electrode, and structures made of an insulator for insulation between first and second supports is formed on the p-layer side of the semiconductor structure; and the growth substrate is separated using a lift-off process. The first support and the second support are grown by plating. | 07-02-2015 |
| 20150228845 | III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A III nitride semiconductor light emitting device achieves improved light output power while reducing forward voltage. A III nitride semiconductor light emitting device according to the present invention includes, in the following order, a p-side electrode, a p-type III nitride semiconductor layer, a light emitting layer, an n-type III nitride semiconductor layer, and a buffer layer including an undoped III nitride semiconductor layer. An exposed portion is provided on the buffer layer. An n-side electrode is provided continuously on the n-type III nitride semiconductor layer, exposed in the exposed portion, and the buffer layer. The n-side electrode includes a plurality of contact portions in contact with the n-type III nitride semiconductor layer, and the contact portions are electrically interconnected on the buffer layer. | 08-13-2015 |
| 20150263234 | III NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a high quality III nitride semiconductor device in which, not only X-shaped cracks extending from the vicinity of the corners of semiconductor structures to the center portion thereof, but also crack spots at the center portion can be prevented from being formed and can provide a method of efficiently manufacturing the III nitride semiconductor device. The III nitride semiconductor device of the present invention includes a support and two semiconductor structures having a nearly quadrangular transverse cross-sectional shape that are provided on the support. The two semiconductor structures are situated such that one side surface of one of the two semiconductor structures is placed to face one side surface of the other of them. The support covers the other three side surfaces and of the four sides of the semiconductor structures. | 09-17-2015 |
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| 20120061683 | GROUP III NITRIDE SEMICONDUCTOR GROWTH SUBSTRATE, GROUP III NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, GROUP III NITRIDE SEMICONDUCTOR ELEMENT AND GROUP III NITRIDE SEMICONDUCTOR FREE-STANDING SUBSTRATE, AND METHOD OF PRODUCING THE SAME - An object of the present invention is to provide a Group III nitride semiconductor epitaxial substrate, a Group III nitride semiconductor element, and a Group III nitride semiconductor free-standing substrate, which have good crystallinity, with not only AlGaN, GaN, and GaInN the growth temperature of which is 1050° C. or less, but also with Al | 03-15-2012 |
| 20120248458 | VERTICALLY STRUCTURED GROUP III NITRIDE SEMICONDUCTOR LED CHIP AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing vertically structured Group III nitride semiconductor LED chips includes a step of forming a light emitting laminate on a growth substrate; a step of forming a plurality of separate light emitting structures by partially removing the light emitting laminate to partially expose the growth substrate; a step of forming a conductive support on the plurality of light emitting structures; a step of lifting off the growth substrate from the plurality of light emitting structures; and a step of cutting the conductive support thereby singulating a plurality of LED chips each having the light emitting structure. The step of partially removing the light emitting laminate is performed such that each of the plurality of light emitting structures has a top view shape of a circle or a 4n-gon en” is a positive integer) having rounded corners. | 10-04-2012 |
| 20120256327 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - A semiconductor device and a manufacturing method therefor, wherein, during lift-off, no cracks due to internal stresses occur in the compound semiconductor layer. A method for manufacturing a semiconductor device having a structure in which a semiconductor layer is bonded on a supporting substrate, including: a device region formation step of forming a device region including the semiconductor layer on a growth substrate through a lift-off layer; a columnar member formation step of forming a columnar member on the growth substrate; a bonding step of bonding the tops of the semiconductor layer and the columnar member to a supporting substrate; a lift-off step of separating the bottom face of the semiconductor layer from the growth substrate by removing the lift-off layer, and not separating the columnar member from the growth substrate; and a step of separating the columnar member from the supporting substrate. | 10-11-2012 |
| 20130137246 | METHOD OF PRODUCING GROUP III NITRIDE SEMICONDUCTOR GROWTH SUBSTRATE - An object of the present invention is to provide a method for producing a Group III nitride semiconductor epitaxial substrate, a Group III nitride semiconductor element, and a Group III nitride semiconductor free-standing substrate, which have good crystallinity, with not only AlGaN, GaN, and GaInN the growth temperature of which is 1050° C. or less, but also with Al | 05-30-2013 |
| 20140001511 | VERTICALLY STRUCTURED GROUP III NITRIDE SEMICONDUCTOR LED CHIP AND METHOD FOR MANUFACTURING THE SAME | 01-02-2014 |
| 20140015105 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - The purpose of the present invention is to provide a good ohmic contact for an n-type Group-III nitride semiconductor. An n-type GaN layer and a p-type GaN layer are aequentially formed on a lift-off layer (growth step). A p-side electrode is formed on the top face of the p-type GaN layer. A copper block is formed over the entire area of the top face through a cap metal. Then, the lift-off layer is removed by making a chemical treatment (lift-off step). Then, a laminate structure constituted by the n-type GaN layer, with which the surface of the N polar plane has been exposed, and the p-type GaN layer is subjected to anisotropic wet etching (surface etching step). The N-polar surface after the etching has irregularities constituted by {10-1-1} planes. Then, an n-side electrode is formed on the bottom face of the n-type GaN layer (electrode formation step). | 01-16-2014 |
| 20150069583 | III NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME - Provided are a III nitride semiconductor device which can be operated at a lower voltage can be provided, in which device a good ohmic contact is achieved between the (000-1) plane side of the III nitride semiconductor layer and the electrode and a method of producing the III nitride semiconductor device. A III nitride semiconductor device of the present invention includes a plurality of protrusions rounded like domes in a predetermined region on the (000-1) plane side of the III nitride semiconductor layer; and an electrode on the upper surface of the predetermined region. | 03-12-2015 |
| 20150295129 | LUMINESCENT DEVICE AND MANUFACTURING METHOD FOR LUMINESCENT DEVICE AND SEMICONDUCTOR DEVICE - A luminescent device and a manufacturing method for the luminescent device and a semiconductor device which are free from occurrence of cracks in a compound semiconductor layer due to the internal stress in the compound semiconductor layer at the time of chemical lift-off. The luminescent device manufacturing method includes forming a device region on part of an epitaxial substrate through a lift-off layer; forming a sacrificing portion, being not removed in a chemical lift-off step, around device region on epitaxial substrate; covering epitaxial substrate and semiconductor layer and forming a covering layer such that level of surface thereof in the region away from device region is lower than luminescent layer surface; removing covering layer on semiconductor layer, and that on sacrificing portion surface; forming a reflection layer on covering layer surface and semiconductor layer surface; and forming a supporting substrate by providing plating on reflection layer. | 10-15-2015 |
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| 20130171389 | PROPYLENE RESIN MULTI-LAYER SHEET, AND PACKAGING BODY FOR HEAT TREATMENT USING SAME - The invention discloses a multilayer propylene resin sheet and a heat-treatable packaging material which have an excellent transparency, flexibility and very-low-temperature impact resistance, and which reduce the thickness variation during lamination, suppress appearance defects such as interfacial roughness and mitigate thinning during fabrication. The multilayer propylene resin sheet is composed of at least two layers, which are (1) an inner layer and (2) an outer layer. The inner layer (1) is made of a resin composition containing 40 to 89 wt % of a specific propylene resin composition (A), 10 to 40 wt % of a specific ethylene-α-olefin copolymer (B), and 1 to 20 wt % of a specific propylene resin (C). The outer layer (2) is made of a specific propylene resin composition. | 07-04-2013 |
| 20130177721 | PROPYLENE RESIN SHEET AND HEAT PROCESSING PACKAGING BODY USING SAME - The invention discloses a propylene resin sheet and a heat-treatable packaging material which have an excellent transparency, flexibility and very-low-temperature impact resistance, and which reduce the thickness variation during lamination, suppress appearance defects such as interfacial roughness. A propylene resin sheet composed of at least one layer, the main layer being made up of a resin composition containing: (1) 50 to 90 wt % of a propylene resin composition (A) which includes from 30 to 70 wt % of a propylene-α-olefin random copolymer component (A1) having a melting peak temperature of 120 to 150° C., and from 70 to 30 wt % of a propylene-α-olefin random copolymer component (A2) having a C | 07-11-2013 |
| Patent application number | Description | Published |
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| 20140288226 | FLUORORUBBER COMPOSITION AND METHOD FOR PRODUCING SAME - The invention provides a method for producing a fluororubber composition that is able to give a crosslinked article that exhibits not only heat resistance, but also excellent mechanical properties at high temperatures. A method for producing a fluororubber composition includes: a step (1-1) of mixing a fluororubber (A) and a carbon black (B) by means of an internal mixer until the maximum temperature reaches 80 to 220° C. so as to obtain an intermediate composition; a step (1-2) of cooling the intermediate composition to a temperature of less than 50° C.; and a step (2-1) of mixing the cooled intermediate composition until the maximum temperature reaches not lower than 10° C. but lower than 80° C. so as to obtain a fluororubber composition. | 09-25-2014 |
| 20150017364 | FLUORORUBBER COMPOSITION - A fluororubber composition including a fluororubber having an iodine content of 10 to 90 mol % for the total mole of the polymer end groups and a carbon black (B), wherein a difference (δG′), represented by G′(1%)-G′(100%), is not lower than 120 kPa and not higher than 3,000 kPa, where G′(1%) denotes a shear modulus at a dynamic strain of 1% under an uncrosslinked state and G′(100%) denotes a shear modulus at a dynamic strain of 100% under an uncrosslinked state, and G′(1%) and G′(100%) are determined by a dynamic viscoelasticity test with a rubber process analyzer (RPA) in a condition that the measurement frequency is 1 Hz and the measurement temperature is 100° C. | 01-15-2015 |
| 20150031822 | FLUORORUBBER COMPOSITION - A fluororubber composition which includes a fluororubber (A) and a carbon black (B). The fluororubber (A) is a vinylidene fluoride-based fluororubber including a structural unit (VdF unit) derived from vinylidene fluoride and a structural unit derived from at least one monomer selected from the group consisting of hexafluoropropylene (HFP), 2,3,3,3-tetrafluoro propylene, and perfluoro(alkyl vinyl ether) (PAVE). The molar ratio of the VdF unit to the structural unit derived from at least one monomer selected from the group consisting of HFP, 2,3,3,3-tetrafluoro propylene, and PAVE is 50/50 to 78/22. The fluororubber composition has a difference δG′ (G′ (1%)-G′ (100%)) of not lower than 120 kPa and not higher than 3,000 kPa, where G′ (1%) denotes a modulus of shearing elasticity at a dynamic strain of 1%, G′ (100%) denotes a modulus of shearing elasticity at a dynamic strain of 100%, and G′ (1%) and G′ (100%) are determined by a dynamic viscoelasticity test. | 01-29-2015 |
