Patent application number | Description | Published |
20090294664 | ELECTRON BEAM APPARATUS - The present invention includes an electron beam device for examining defects on semiconductor devices. The device includes an electron source for generating a primary electron beam, wherein the total acceleration potential is divided and is provided across the ground potential. Also included is at least one condenser lens for pre-focusing the primary electron beam, an aperture for confining the primary electron beam to ameliorate electron-electron interaction, wherein the aperture is positioned right underneath the last condenser lens, and a SORIL objective lens system for forming immersion magnetic field and electrostatic field to focus the primary beam onto the specimen in the electron beam path. A pair of grounding rings for providing virtual ground voltage potential to those components within the electron beam apparatus installed below a source anode and above a last polepiece of the SORIL objective lens. | 12-03-2009 |
20090315444 | THERMAL FIELD EMISSION CATHODE - A thermal field emission cathode which is employed in an electron microscope, a critical dimension examine tool, an electron beam lithograph machine, an electron beam tester and other electron beam related systems as an electron source is disclosed. Embodiments disclose changing coating shape, coating position and shorten emitter length to extend the lifetime of the field emission cathode. | 12-24-2009 |
20100019462 | APPARATUS FOR INCREASING ELECTRIC CONDUCTIVITY TO A SEMICONDUCTOR WAFER SUBSTRATE WHEN EXPOSURE TO ELECTRON BEAM - An apparatus for increasing electric conductivity to a wafer substrate when exposures to electron beam irradiation is disclosed. More specifically, a more free mechanical contact between a wafer and electric contact pins (within an electrostatic chuck) is provided to significantly reduce the scratch and damage on the wafer backside. | 01-28-2010 |
20100102227 | ELECTRON BEAM APPARATUS - The present invention relates to a charged particle beam apparatus which employs a scanning electron microscope for sample inspection and defect review. | 04-29-2010 |
20100103583 | WAFER GROUNDING METHODOLOGY - An apparatus for increasing electric conductivity to a wafer substrate, when exposed to electron beam irradiation, is disclosed. More specifically, a methodology to breakdown the insulating layer on wafer backside is provided to significantly reduce the damage on the wafer backside while proceeding with the grounding process. | 04-29-2010 |
20110051306 | WAFER GROUNDING AND BIASING METHOD, APPARATUS, AND APPLICATION - A wafer grounding apparatus and method adaptable to a charged particle beam apparatus is disclosed. A wafer substrate is supported by a wafer mount. A grounding pin is arranged to be in contact with a backside film formed on a backside of the wafer substrate. A grounding pulse generator provides at least one pulse to drive the grounding pin such that dielectric breakdown occurring at the backside film leads to establishment of a current path through the backside films. Accordingly, a current flows in the wafer substrate through this current path and then flows out of the wafer substrate via at least one current return path formed from capacitive coupling between the wafer substrate and the wafer mount. | 03-03-2011 |
20110084591 | THERMAL FIELD EMISSION CATHODE - A thermal field emission cathode which is employed in an electron microscope, a critical dimension examine tool, an electron beam lithograph machine, an electron beam tester and other electron beam related systems as an electron source is disclosed. Embodiments disclose changing coating shape, coating position and shorten emitter length to extend the lifetime of the field emission cathode. | 04-14-2011 |
20120098409 | Filament for Electron Source - This invention relates to a filament for electron emission cathode which is employed in an electron microscope, a critical dimension examine tool, an electron beam lithograph machine, an electron beam tester and other electron beam related systems as an electron source. Embodiments of the present invention discloses method with which a Re (Rhenium) is used as heat source such that vibration issue of prior tungsten filament can be depressed. | 04-26-2012 |
20150049411 | WAFER GROUNDING AND BIASING METHOD, APPARATUS, ANDAPPLICATION - A wafer grounding apparatus and method adaptable to a charged particle beam apparatus is disclosed. A wafer substrate is supported by a wafer mount. A pulse current pin is arranged to be in contact with a backside film formed on a backside of the wafer substrate. A grounding pulse generator provides at least one pulse to drive the pulse current pin such that dielectric breakdown occurring at the backside film leads to establishment of a current path through the backside films. Accordingly, a current flows in the wafer substrate through this current path and then flows out of the wafer substrate via at least one current return path formed from capacitive coupling between the wafer substrate and the wafer mount. | 02-19-2015 |