Patent application number | Description | Published |
20110303960 | LOW RESISTIVITY TUNGSTEN PVD WITH ENHANCED IONIZATION AND RF POWER COUPLING - Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal nitride film layer on the conductive film layer, a silicon-containing film layer on the refractory metal nitride film layer, and a tungsten film layer on the silicon-containing film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer. | 12-15-2011 |
20130256126 | SUBSTRATE SUPPORT WITH RADIO FREQUENCY (RF) RETURN PATH - Apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate includes a substrate support that may include a dielectric member having a surface to support a substrate thereon; one or more first conductive members disposed below the dielectric member and having a dielectric member facing surface adjacent to the dielectric member; and a second conductive member disposed about and contacting the one or more first conductive members such that RF energy provided to the substrate by an RF source returns to the RF source by traveling radially outward from the substrate support along the dielectric member facing surface of the one or more first conductive members and along a first surface of the second conductive member disposed substantially parallel to a peripheral edge surface of the one or more first conductive members after travelling along the dielectric layer facing surface. | 10-03-2013 |
20140020629 | TWO PIECE SHUTTER DISK ASSEMBLY FOR A SUBSTRATE PROCESS CHAMBER - Shutter disk assemblies for use in process chambers to protect a substrate support disposed below the shutter disk assembly from undesired material deposition are provided herein. In some embodiments, a shutter disk assembly for use in a process chamber to protect a substrate support disposed below the shutter disk assembly may include an upper disk member having a top surface and a bottom surface; and a lower carrier member having at least a portion of the lower carrier member disposed below a portion of the upper disk member to support the upper disk member and to create a protective overlap region that prevents exposure of the substrate support upon deformation of the upper disk member. | 01-23-2014 |
20140042016 | LOW RESISTIVITY TUNGSTEN PVD WITH ENHANCED IONIZATION AND RF POWER COUPLING - Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer. | 02-13-2014 |
20150056819 | VARIABLE FREQUENCY MICROWAVE (VFM) PROCESSES AND APPLICATIONS IN SEMICONDUCTOR THIN FILM FABRICATIONS - Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components. | 02-26-2015 |
Patent application number | Description | Published |
20100146856 | MULTIZONE CO-GASIFICATION - A gasifier is provided gasify multiple fuels. The gasifier is configured to include a first gasification zone for gasifying a high-calorific-value feedstock with an oxidant. The gasifier is configured to substantially consume the oxidant within the first gasification zone. The gasifier further includes a second gasification zone for gasifying a low-calorific-value, high-oxygen-content feedstock. The high-calorific-value fuel may be coal and the low-calorific-value fuel may be biomass. | 06-17-2010 |
20100146857 | METHOD OF OPERATING A GASIFIER - A method of operating a gasifier is provided that envisions dividing the gasifier into multiple zones. A high-calorific-value feedstock with an oxidant is injected in the first zone. The gasifier is operated to substantially consume the oxidant within the first gasification zone. The method of operating the gasifier further includes injecting a low-calorific-value, high-oxygen-content feedstock in a second gasification zone. The low-calorific-value, high-oxygen-content feedstock is devolatilized and gasified in second zone. A method of operation provides for a synergistic co-gasification of the high-calorific-value feedstock and the low-calorific-value, high oxidant content feedstock. The method provides for specific control actions that enable operation of multi-fuel, multizone gasifier. | 06-17-2010 |
20100146858 | METHOD OF RETROFITTING A COAL GASIFIER - A coal gasifier is retrofitted to achieve multiple advantages such as reduced oxygen consumption, reduced CO2 and NOx emissions, better H:C ratio, better carbon conversion etc. This is achieved by dividing the coal into at least two zones and modifying the gasifier and operating it as described. The coal is injected into a first zone, configured to devolatilize a substantial portion of the injected coal to produce coal char and volatiles. The operation is tuned to substantially consume the oxidant injected in the first zone. A low-calorific-value, high oxidant feedstock is injected in second zone of the gasifier. The devolatilization of the low-calorific-value, high oxidant content feedstock provides the oxygen containing compounds which gasify at least a portion of the coal char generated in the first zone. | 06-17-2010 |
20140059930 | METHOD OF OPERATING A GASIFIER - A coal gasifier is retrofitted to achieve multiple advantages such as reduced oxygen consumption, reduced CO2 and NOx emissions, better H:C ratio, better carbon conversion etc. This is achieved by dividing the coal into at least two zones and modifying the gasifier and operating it as described. The coal is injected into a first zone, configured to devolatilize a substantial portion of the injected coal to produce coal char and volatiles. The operation is tuned to substantially consume the oxidant injected in the first zone. A low-calorific-value, high oxidant feedstock is injected in second zone of the gasifier. The devolatilization of the low-calorific-value, high oxidant content feedstock provides the oxygen containing compounds which gasify at least a portion of the coal char generated in the first zone. | 03-06-2014 |