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| 20080261398 | Semiconductor device having oxidized metal film and manufacture method of the same - A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film. | 10-23-2008 |
| 20090020883 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A semiconductor device includes a first contact plug arranged above a semiconductor substrate and using aluminum (Al) as a material; a second contact plug arranged on and in contact with the first contact plug and using a refractory metal material; a first dielectric film arranged on a flank side of the first and second contact plugs; a wire arranged above the second contact plug and using copper (Cu) as a material; a second dielectric film arranged on a flank side of the wire; and a barrier film arranged at least between the wire and the first dielectric film and between the wire and the second dielectric film. | 01-22-2009 |
| 20090236746 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A semiconductor device includes a contact plug electrically connected to a semiconductor substrate; a first barrier metal film with a columnar crystal structure arranged in contact with the semiconductor substrate at least on a bottom surface side of the contact plug; an amorphous film made of a material of the first barrier metal film arranged in contact with the first barrier metal film at least on the bottom surface side of the contact plug; a second barrier metal film made of a material identical to that of the first barrier metal film and having a columnar crystal structure, at least a portion of which is arranged in contact with the amorphous film on the bottom surface side and a side surface side of the contact plug; and a dielectric film arranged on the side surface side of the contact plug. | 09-24-2009 |
| 20100216305 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a ruthenium (Ru) film at least on a bottom surface of the opening; and filling in the opening with a tungsten (W) film in which the Ru film is formed, according to a chemical vapor deposition (CVD) method by hydrogen (H | 08-26-2010 |
| 20110031622 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device according to an embodiment includes: forming a nickel (Ni) film containing phosphorus (P) elements on a substrate having at least one of a diffusion layer formed by using silicon (Si) and a gate electrode formed by using Si exposed on a surface thereof; and forming a nickel silicide (NiSi) film containing P elements on the substrate from the Ni film containing the P elements and Si in at least one of the diffusion layer and the gate electrode. | 02-10-2011 |
| 20110037043 | NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a nonvolatile memory device includes a first wire, a second wire and a nonvolatile memory cell. The first wire is formed to extend in a first direction, and the second wire is formed at height different from height of the first wire and to extend in a second direction. The nonvolatile memory cell is arranged to be held between the first wire and the second wire in a poison where the first wire and the second wire cross. The nonvolatile memory cell includes a nonvolatile storage layer and a current limiting resistance layer connected in series to the nonvolatile storage layer and having resistance of 1 kilo-ohm to 1 mega-ohm. | 02-17-2011 |
| 20120152168 | SEMICONDUCTOR DEVICE HAVING OXIDIZED METAL FILM AND MANUFACTURE METHOD OF THE SAME - A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film. | 06-21-2012 |
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| 20100314602 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - A nonvolatile memory device includes: a first conductive layer; a second conductive layer; a first resistance change layer provided between the first conductive layer and the second conductive layer and having an electrical resistance changing with at least one of an applied electric field and a passed current; and a first lateral layer provided on a lateral surface of the first resistance change layer and having an oxygen concentration higher than an oxygen concentration in the first resistance change layer | 12-16-2010 |
| 20120292587 | NONVOLATILE MEMORY DEVICE - According to one embodiment, a nonvolatile memory device includes a memory cell. The memory cell includes a stacked film structure. The stacked film structure is capable of maintaining a first state or a second state. The first state includes a lower electrode film, a first memory element film provided on the lower electrode film and containing a first oxide and an upper electrode film provided on the first memory element film. The second state includes the lower electrode film, the first memory element film provided on the lower electrode film, a second memory element film provided on the first memory element film and containing a second oxide and the upper electrode film provided on the second memory element film. | 11-22-2012 |
| 20130240822 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A nonvolatile memory device includes a first film layer formed on a substrate, and a second film layer formed on the first film layer. The second film layer comprises a first oxide material having a first oxygen content, and a second oxide material disposed laterally of the first oxide material and having a second oxygen content that is greater than the first oxygen content. The memory device also includes a third film layer formed on the second film layer, and the third film layer is disposed on the first oxide material and exposes portions of the second oxide material. | 09-19-2013 |
| 20140021430 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - A nonvolatile memory device includes: a first conductive layer; a second conductive layer; a first resistance change layer provided between the first conductive layer and the second conductive layer and having an electrical resistance changing with at least one of an applied electric field and a passed current; and a first lateral layer provided on a lateral surface of the first resistance change layer and having an oxygen concentration higher than an oxygen concentration in the first resistance change layer | 01-23-2014 |
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| 20100115479 | Method for generating pattern, method for manufacturing semiconductor device, semiconductor device, and computer program - A method for generating a pattern includes reading out an interconnect layout and a hole layout, the interconnect layout prescribing interconnect patterns, the hole layout prescribing hole patterns configured to connect to the interconnect patterns; extracting one of the hole patterns to be connected within the same interconnect layer level to one of the interconnect patterns in a pattern processing area; extracting a first processing area including the extracted hole pattern; calculating a first pattern density of the interconnect patterns included in the first processing area; and generating first additional patterns in the first processing area based on the first pattern density. | 05-06-2010 |
| 20120069625 | RESISTANCE CHANGE ELEMENT AND RESISTANCE CHANGE MEMORY - According to one embodiment, a resistance change element includes a first film provided on a first electrode side, a second film provided on a second electrode side, a barrier film sandwiched between the first film and the second film, and metal impurities added in the first or second film, the metal impurities migrating between the first and second films bi-directionally according to a direction of a first electric field generated between the first and second electrodes. The resistance change element has a first resistance state when the metal impurities are present in the first film, and the resistance change element has a second resistance state different from the first resistance state when the metal impurities are present in the second film. | 03-22-2012 |
| 20120306081 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - According to one embodiment, a semiconductor device includes an interconnect provided on a first interlayer insulating film covering a semiconductor substrate in which an element is formed, a cap layer provided on the upper surface of the interconnect, and a barrier film provided between the interconnect and a second interlayer insulating film covering the interconnect. The interconnect includes a high-melting-point conductive layer, and the width of the interconnect is smaller than the width of the cap layer. The barrier film includes a compound of a contained element in the high-melting-point conductive layer. | 12-06-2012 |
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| 20130243680 | GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CRYSTAL SUBSTRATE - A group 13 nitride crystal has a hexagonal crystal structure containing a nitrogen atom and at least one type of metal atom selected from the group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal has a basal plane dislocation in a plurality of directions. Dislocation density of the basal plane dislocation is higher than dislocation density of a threading dislocation of a c-plane. | 09-19-2013 |
| 20140077218 | GROUP 13 NITRIDE CRYSTAL, GROUP 13 NITRIDE CRYSTAL SUBSTRATE, AND METHOD OF MANUFACTURING GROUP 13 NITRIDE CRYSTAL - A group 13 nitride crystal having a hexagonal crystal structure contains at least a nitrogen atom and at least one metal atom selected from a group consisting of B, Al, Ga, In and Tl. Dislocation density of basal plane dislocations in a cross section parallel to a c-axis is 10 | 03-20-2014 |
| 20140271439 | GROUP 13 NITRIDE CRYSTAL AND METHOD FOR PRODUCTION OF GROUP 13 NITRIDE CRYSTAL - A group 13 nitride crystal of hexagonal crystal including at least one or more metal atom selected from the group consisting of B, Al, Ga, In, and Tl, and a nitrogen atom, the group 13 nitride crystal comprises: a first region provided on the inner side of a cross section crossing a c-axis; a third region provided on an outermost side of the cross section; a second region provided between the first region and the third region at the cross section and having characteristics different from characteristics of the first region and the third region, wherein a shape formed by a boundary between the first region and the second region at the cross section is non-hexagonal. | 09-18-2014 |
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| 20140070289 | FERROELECTRIC MEMORY AND MANUFACTURING METHOD THEREOF - According to one embodiment, a ferroelectric memory includes a gate insulation film formed on a semiconductor substrate, a ferroelectric film formed on the gate insulation film, and a control electrode formed on the ferroelectric film. The ferroelectric film is a film containing a metal, which is hafnium or zirconium, and oxygen, and contains an element other than the metal at a concentration lower than a concentration of the metal. | 03-13-2014 |
| 20140070290 | FERROELECTRIC MEMORY AND MANUFACTURING METHOD OF THE SAME - According to one embodiment, a ferroelectric memory includes a semiconductor layer, an interfacial insulating film formed on the semiconductor layer, a ferroelectric film formed on the interfacial insulating film, and a gate electrode formed on the ferroelectric film, wherein the ferroelectric film is a film which includes a metal that is hafnium (Hf) or zirconium (Zr) and oxygen as the main components and to which an element selected from the group consisting of silicon (Si), magnesium (Mg), aluminum (Al). | 03-13-2014 |
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| 20130248808 | RESISTANCE CHANGE ELEMENT AND NONVOLATILE MEMORY DEVICE - A resistance change element includes a first conductive layer, a second conductive layer, and a memory layer. The memory layer is provided between the first conductive layer and the second conductive layer. The memory layer is capable of reversibly transitioning between a first state and a second state due to at least one of a voltage and a current supplied via the first conductive layer and the second conductive layer. A resistance of the second state is higher than a resistance of the first state. The memory layer includes niobium oxide. One of a (100) plane, a (010) plane, and a (110) plane of the memory layer is oriented in a stacking direction from the first conductive layer toward the second conductive layer. | 09-26-2013 |
| 20140284537 | MEMORY ELEMENT - According one embodiment, a memory element includes: a first electrode layer; a second electrode layer including a metal element; and a memory layer provided between the first electrode layer and the second electrode layer, the memory layer including an oxide layer, and a platinum group metal being dispersed in at least part of the oxide layer, an absolute value of a standard Gibbs free energy of formation of an oxide of an element included in the oxide layer being larger than an absolute value of a standard Gibbs free energy of formation when the metal element changes to an oxide. | 09-25-2014 |
| 20140284546 | MEMORY ELEMENT - According to one embodiment, a memory element includes: a first electrode layer; a second electrode layer; and a memory layer provided between the first electrode layer and the second electrode layer, and the memory layer including a plurality of first oxide layers in a second oxide layer, a resistivity of each of the plurality of first oxide layers being higher than a resistivity of the second oxide layer. | 09-25-2014 |
