Patent application number | Description | Published |
20100164525 | TEST SOCKET, TEST APPARATUS WITH TEST SOCKET - A test socket is provided that includes a socket body to receive an object to be tested, a lid disposed on the socket body, one or more pushers coupled to a first surface of lid to apply force to a first surface of the object toward the socket body, and a temperature controlling member to provide a temperature to the object. A semiconductor package may be tested in a test apparatus that includes the test socket, the methods of testing including receiving a semiconductor package in a socket in a test chamber, applying a first temperature to the test chamber to test the semiconductor package at a first test temperature, and applying a second temperature to the semiconductor package to test the semiconductor package at a second test temperature by controlling the application of the second temperature with the socket. | 07-01-2010 |
20100178714 | Method of forming magnetic memory device - There are provided a magnetic memory device and a method of forming the magnetic memory device. The method of forming the magnetic memory device includes sequentially forming a first magnetic conductor, a tunnel barrier layer, and a second magnetic conductor on a substrate, forming a mask pattern on the second magnetic conductor, performing a primary etching of the second magnetic conductor by using the mask pattern as an etching mask, forming at least one spacer on sidewalls of the second magnetic conductor formed by the primary etching, and performing a secondary etching of the first magnetic conductor by using the mask pattern and the at least one spacers as an etching mask. | 07-15-2010 |
20100227479 | Semiconductor device and associated methods of manufacture - Provided are a semiconductor device and a method of fabricating the same. The method includes forming a metal nitride layer and a metal oxide layer on a semiconductor substrate to be in contact with each other, and annealing the substrate including the metal nitride layer and the metal oxide layer to form a metal oxynitride layer. | 09-09-2010 |