Patent application number | Description | Published |
20110205410 | IMAGE SENSOR HAVING COLOR FILTERS - Provided is an image sensor having a color filter. The image sensor includes a photoelectric conversion device formed in a semiconductor substrate. Interlayer insulating layers are laminated on an upper portion of the semiconductor substrate. The interlayer insulating layers defines an opening located on an upper portion of the photoelectric conversion device. A color filter is disposed in the opening, and a planarization layer fills the opening on the color filter. The planarization layer has a refractive index which is greater than an average refractive index of the interlayer insulating layers. | 08-25-2011 |
20130307040 | IMAGE SENSORS AND METHODS OF FABRICATING THE SAME - Provided are image sensors and methods of fabricating the same. The image sensor has a transfer gate, which may be configured to include a buried portion having a flat bottom surface and a rounded lower corner. This structure of the buried portion enables to transfer electric charges stored in the photoelectric conversion part effectively. | 11-21-2013 |
20130320407 | IMAGE SENSOR - An image sensor includes a first device isolation layer separating a plurality of pixels from one another, and a second device isolation layer disposed along inner side surfaces of parts of the first device isolation layer that extend around the pixels. The second device isolation layer delimits an active region of the semiconductor substrate. Each pixel includes a photoelectric converter, a floating diffusion region, a ground region, and a gate of a transfer transistor. The gate extends into the active region of the semiconductor substrate. The ground region is electrically connected to a ground voltage terminal. | 12-05-2013 |
20140015025 | IMAGE SENSORS INCLUDING CHANNEL STOP REGIONS SURROUNDING PHOTODIODES AND METHODS OF FABRICATING THE SAME - Image sensors are provided. In the image sensor, an area of a device isolation layer may be reduced and elements may be isolated from each other by a channel stop region extending between the photoelectric conversion region and the device isolation layer, such that a dark current property of the image sensor may be improved. | 01-16-2014 |
20140015026 | IMAGE SENSORS INCLUDING WELL REGIONS OF DIFFERENT CONCENTRATIONS - An image sensor includes a high concentration well region in contact with a device isolation layer extending along a periphery of a photoelectric converting part, which can improve dark current properties of the image sensor. The image sensor also includes a low concentration well region in contact with a sidewall of the device isolation layer overlapped with a transfer gate, which can improve image lag properties of the image sensor. Related fabrication methods are also discussed. | 01-16-2014 |
20140375979 | UNIT PIXEL AND IMAGE SENSOR COMPRISING THE UNIT PIXEL CIRCUIT - An image sensor is provided which includes a plurality of unit pixels, ones of which are configured to convert an input light signal into at least four frame signals. The image sensor also includes a signal processor that is configured to measure a distance from an object based on the at least four frame signals from one of the plurality of unit pixels. | 12-25-2014 |
20150333100 | IMAGE SENSORS INCLUDNG WELL REGIONS OF DIFFERENT CONCENTRATIONS AND METHODS OF FABRICATING THE SAME - An image sensor includes a high concentration well region in contact with a device isolation layer extending along a periphery of a photoelectric converting part, which can improve dark current properties of the image sensor. The image sensor also includes a low concentration well region in contact with a sidewall of the device isolation layer overlapped with a transfer gate, which can improve image lag properties of the image sensor. Related fabrication methods are also discussed. | 11-19-2015 |
20150373255 | AUTO-FOCUS IMAGE SENSOR AND DIGITAL IMAGE PROCESSING DEVICE INCLUDING THE SAME - The inventive concepts provide an auto-focus image sensor and a digital image processing device including the same. The auto-focus image sensor includes a substrate including at least one first pixel used for detecting a phase difference and at least one second pixel used for detecting an image, a deep device isolation portion disposed in the substrate to isolate the first pixel from the second pixel, and a light shielding pattern disposed on the substrate of at least the first pixel. The amount of light incident on the first pixel is smaller than the amount of light incident on the second pixel by the light shielding pattern. | 12-24-2015 |