| Patent application number | Description | Published |
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| 20100059752 | DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME - A method of manufacturing a display substrate and a display substrate manufactured by the same that are capable of improving display quality are presented. The method includes forming a gate wiring, a data wiring, a thin film transistor connected to the gate wiring and the data wiring respectively, and a protective insulating layer covering the gate wiring, the data wiring and the thin film transistor; forming a first black matrix pattern on the protective insulating layer; forming a protective insulating layer pattern by etching a part of the protective insulating layer by using the first black matrix pattern as an etching mask; forming a second black matrix pattern exposing at least one pixel region by removing a part of the first black matrix pattern; forming a color filter on the pixel region; and forming a pixel electrode electrically connected to the thin film transistor on at least a part of the color filter. | 03-11-2010 |
| 20100148182 | THIN FLIM TRANSISTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF - A thin film transistor (TFT) substrate is provided in which a sufficiently large contact area between conductive materials is provided in a contact portion and a method of fabricating the TFT substrate. The TFT substrate includes a gate interconnection line formed on an insulating substrate, a gate insulating layer covering the gate interconnection line, a semiconductor layer arranged on the gate insulating layer, a data interconnection line including a data line, a source electrode and a drain electrode formed on the semiconductor layer, a first passivation layer formed on the data interconnection line and exposing the drain electrode, a second passivation layer formed on the first passivation film and a pixel electrode electrically connected to the drain electrode. An outer sidewall of the second passivation layer is positioned inside an outer sidewall of the first passivation layer. | 06-17-2010 |
| 20100163862 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME - A method of fabricating a thin film transistor array substrate is presented. The method entails forming a gate interconnection line on an insulating substrate, forming a gate insulating layer on the gate interconnection line, forming a semiconductor layer and a data interconnection line on the semiconductor layer, sequentially forming multiple passivation layers, etching the passivation layers down to a drain electrode that is an extension of the data interconnection line. The portion of the drain electrode that is exposed at this stage is a part of the drain electrode-pixel electrode contact portion. A pixel electrode is formed connected to the drain electrode. Two of the passivation layers have the same composition but are processed at different temperatures. A thin film transistor prepared in the above manner is also presented. | 07-01-2010 |
| 20100264417 | THIN-FILM TREANSISTOR ARRAY PANEL AND METHOD OF FABRICATING THE SAME - A thin-film transistor array panel and a manufacturing method thereof are provided for one or more embodiments. The thin-film transistor array panel may include: a substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the gate electrode; a source electrode and a drain electrode formed on the gate insulating layer; and a flatness layer formed on the source electrode and the drain electrode, wherein the drain electrode has a higher height than the flatness layer. | 10-21-2010 |
| 20110012115 | DISPLAY DEVICE WITH IMPROVED SENSING MECHANISM - A display panel that includes: a substrate, a sensing transistor disposed on the substrate, and a readout transistor connected to the sensing transistor and transmitting a detecting signal is presented. The sensing transistor includes a semiconductor layer disposed on the upper substrate, a source electrode and a drain electrode disposed on the semiconductor layer, and a gate electrode overlapping the semiconductor layer on the source electrode and the drain electrode. Accordingly, in a display device and a manufacturing method thereof, an infrared sensing transistor, a visible light sensing transistor, and a readout transistor are simultaneously formed with a top gate structure such that the number of manufacturing processes and the manufacturing cost may be reduced. | 01-20-2011 |
| 20110032461 | VISIBLE-LIGHT BLOCKING MEMBER, INFRARED SENSOR INCLUDING THE VISIBLE-LIGHT BLOCKING MEMBER, AND LIQUID CRYSTAL DISPLAY DEVICE INCLUDING THE INFRARED SENSOR - In a visible-light blocking member, an infrared sensor including the visible-light blocking member, and a liquid crystal display including the infrared sensor, a visible-light blocking member is a structure including amorphous germanium or a compound of amorphous germanium and has higher transmittance for a wavelength of an infrared ray region than for a wavelength of a visible light region. Accordingly, sensitivity to infrared rays may be increased by applying the visible-light blocking member to the infrared sensor. | 02-10-2011 |
| 20110057189 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device includes a lower panel including a lower substrate and a pixel transistor formed on the lower substrate; and an upper panel facing the lower panel, and including an upper substrate, a sensing transistor formed on the upper substrate, and a readout transistor connected to the sensing transistor and transmitting a signal. The readout transistor includes a first lower gate electrode formed on the upper substrate, a first semiconductor layer formed on the first lower gate electrode and overlaps the first gate electrode, and a first source electrode and a first drain electrode disposed on the first semiconductor layer. The sensing transistor includes a light blocking film disposed on the upper substrate, a second lower gate electrode contacting the light blocking film on the light blocking film, a second semiconductor layer overlapping the light blocking film on the second lower gate electrode, a second source electrode and a second drain electrode formed on the second semiconductor layer, and a second upper gate electrode overlapping the second semiconductor layer on the second source electrode and the second drain electrode. | 03-10-2011 |
| 20110090420 | SENSOR ARRAY SUBSTRATE, DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A sensor array substrate, a display device including the sensor array substrate, and a method of manufacturing the sensor array substrate are provided. The sensor array substrate includes a substrate, a first sensor formed on a first pixel area of the substrate and configured to detect light, an overcoat layer formed on the first sensor, and a shield layer formed over the overcoat layer, wherein the shield layer overlaps the first sensor. | 04-21-2011 |
| 20110102385 | ANISOTROPIC CONDUCTIVE FILM, METHOD OF MANUFACTURING THE SAME AND DISPLAY APPARATUS HAVING THE SAME - An anisotropic conductive film includes a first thin film layer including concave portions, conductive balls arranged in the concave portions, insulating balls disposed on and between the conductive balls and each having a diameter smaller than the conductive balls, and a second thin film layer disposed covering the insulating balls. A display apparatus includes a pad part and a driving chip, which are electrically connected by the anisotropic conductive film. | 05-05-2011 |
| 20110147746 | TOUCH SCREEN SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY PANEL INCLUDING THE TOUCH SCREEN SUBSTRATE - A touch screen substrate includes a base substrate, a first switching element and a first sensing element which senses infrared light. The first switching element includes a first switching gate electrode, a first active pattern disposed on the first switching gate electrode, a first switching source electrode disposed on the first active pattern and a first switching drain electrode disposed apart from the first switching source electrode. The first sensing element includes a first sensing drain electrode connected to the first switching source electrode, a first sensing source electrode disposed apart from the first sensing drain electrode, a second active pattern disposed below the first sensing drain electrode and the first sensing source electrode and including a first amorphous layer, a doped amorphous layer and a second amorphous layer, and a first sensing gate electrode disposed on the first sensing drain electrode and the first sensing source electrode. | 06-23-2011 |
| 20110169000 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a first light blocking pattern formed on a base substrate, a first switching element, a second light blocking pattern formed on the base substrate, and a first sensing element. The first light blocking pattern is configured to block visible light and transmit infrared light. The first switching element includes a first semiconductor pattern, a first source electrode, a first drain electrode, and a first gate electrode. The second light blocking pattern is configured to block the visible light and transmit the infrared light. The first sensing element is configured to detect the infrared light, and includes a second semiconductor pattern, a second source electrode, a second drain electrode, and a second gate electrode. | 07-14-2011 |
| 20110261040 | INFORMATION DETECTION DISPLAY - An information detection device includes: a plurality of light sensing units each configured to detect light; a plurality of sensor scanning drivers each configured to apply sensor scanning signals to the light sensing units; a sensing signal processor configured to receive position information detected by the light sensing units; a plurality of bias applying units each configured to apply bias voltages to the light sensing units; wherein each bias applying unit applies a different polarity of bias voltage. | 10-27-2011 |
| 20110297931 | METHOD OF FABRICATING A THIN FILM TRANSISTOR ARRAY SUBSTRATE - A method of fabricating a thin film transistor array substrate is presented. The method entails forming a gate interconnection line on an insulating substrate, forming a gate insulating layer on the gate interconnection line, forming a semiconductor layer and a data interconnection line on the semiconductor layer, sequentially forming multiple passivation layers, etching the passivation layers down to a drain electrode that is an extension of the data interconnection line. The portion of the drain electrode that is exposed at this stage is a part of the drain electrode-pixel electrode contact portion. A pixel electrode is formed connected to the drain electrode. Two of the passivation layers have the same composition but are processed at different temperatures. A thin film transistor prepared in the above manner is also presented. | 12-08-2011 |
| 20120003768 | THIN FLIM TRANSISTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF - A thin film transistor (TFT) substrate is provided in which a sufficiently large contact area between conductive materials is provided in a contact portion and a method of fabricating the TFT substrate. The TFT substrate includes a gate interconnection line formed on an insulating substrate, a gate insulating layer covering the gate interconnection line, a semiconductor layer arranged on the gate insulating layer, a data interconnection line including a data line, a source electrode and a drain electrode formed on the semiconductor layer, a first passivation layer formed on the data interconnection line and exposing the drain electrode, a second passivation layer formed on the first passivation film and a pixel electrode electrically connected to the drain electrode. An outer sidewall of the second passivation layer is positioned inside an outer sidewall of the first passivation layer. | 01-05-2012 |
| 20120032911 | DISPLAY APPARATUS AND METHOD OF DRIVING THE SAME - A display apparatus includes a display panel, sensor circuits, and a detection circuit. Each sensor circuit senses at least two external signals different from each other and outputs a sensing signal. The detection circuit receives the sensing signal to detect a position to which the external signals are applied. Each sensor circuit includes sensors commonly connected to an output terminal, a scan line which receives a scan signal, a capacitor disposed between the scan line and the output terminal, charged with a first voltage in response to the scan signal, and charged with a second voltage greater than the first voltage in response to the current signal after the scan line is floated, a switching device which outputs the sensing signal in response to the second voltage, and a readout line which applies the sensing signal output from the switching device to the detection circuit. | 02-09-2012 |
| 20120113344 | DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - A display apparatus includes a light generating part and a display panel. The display panel includes a first substrate, and a second substrate facing the first substrate. The second substrate includes a plurality of pixel units including a sensor sensing the light generated from the light generating part and reflected from an object disposed on the display panel, and a pixel. The display panel further includes a light blocking member which is positioned at a position corresponding to an area in which the sensor is disposed and prevents the light generated from the light generating part from being directly incident to the sensor. The light blocking member is disposed on the first substrate. | 05-10-2012 |
| 20120138929 | IR SENSING TRANSISTOR AND MANUFACTURING METHOD OF DISPLAY DEVICE INCLUDING THE SAME - An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer. | 06-07-2012 |
| 20120138960 | LIGHT SENSOR AND DISPLAY APPARATUS HAVING THE SAME - In a display apparatus, a light sensor of a display includes a light sensing layer, a source electrode, a drain electrode, an insulating layer, and a gate electrode to sense light from an external source. The light sensing layer is disposed on the substrate to sense light, and the source and drain electrodes are disposed on the light sensing layer and are covered by the insulating layer. The gate electrode is disposed on the insulating layer. An edge of the gate electrode is disposed on the light sensing layer at least in an area where the light sensing layer is overlapped with the source and drain electrodes. | 06-07-2012 |
| 20120182277 | DISPLAY PANEL HAVING EMBEDDED LIGHT SENSORS - A display panel includes a plurality of pixels disposed on a first panel substrate of first and second panel substrates that face each other and cooperate to display an image. The second panel substrate includes a base substrate, a read-out line, a first insulating layer, a scan line, a switching device, and a light sensor. The read-out line is disposed on the base substrate and extended in a direction. The first insulating layer is disposed on the read-out line. The scan line is extended to cross the read-out line and disposed on the first insulating layer. The switching device includes a first electrode connected to the scan line, a second electrode connected to a read-out line, and a third electrode spaced apart from the second electrode. The light sensor is structured to selectively detect lights of predetermined wavelengths and connected to the third electrode of the switching device. | 07-19-2012 |
| 20120188204 | TOUCH SENSING SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A touch sensing substrate includes a substrate, a first light sensing element, a second light sensing element and a first bias line. The first light sensing element includes a first gate electrode, a first active pattern overlapping with the first gate electrode, a first source electrode partially overlapping with the first active pattern and a first drain electrode partially overlapping with the first active pattern. The second light sensing element includes a second gate electrode, a second active pattern overlapping with the second gate electrode, a second source electrode partially overlapping with the second active pattern and a second drain electrode partially overlapping with the second active pattern. The first bias line is connected to the first and second gate electrodes. | 07-26-2012 |
| 20120228505 | OPTICAL SENSOR - An optical sensor includes a visible light sensor includes a visible light sensing transistor and an infrared light sensor includes an infrared light sensing transistor, wherein the visible light sensing transistor receives a first driving voltage through a first driving voltage line, the infrared light sensing transistor receives a second driving voltage through a second driving voltage line, and the visible light sensing transistor and the infrared light sensing transistor receive a reference voltage through a reference voltage line. | 09-13-2012 |
| 20120248452 | OPTICAL SENSOR - An optical sensor preventing damage to a semiconductor layer, and preventing a disconnection and a short circuit of a source electrode and a drain electrode, and a manufacturing method of the optical sensor is provided. The optical sensor includes: a substrate; an infrared ray sensing thin film transistor including a first semiconductor layer disposed on the substrate; a visible ray sensing thin film transistor including a second semiconductor layer disposed on the substrate; a switching thin film transistor including a third semiconductor layer disposed on the substrate; and a semiconductor passivation layer enclosing an upper surface and a side surface of an end portion of at least one of the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer. | 10-04-2012 |
| 20120268356 | DISPLAY APPARATUS - In a display apparatus, a first substrate includes a plurality of pixels and a plurality of first signal lines connected to the pixels. A second substrate includes a plurality of sensors and a plurality of second signal lines connected to the sensors and extended in a direction in which the first signal lines are extended. Each of the second signal lines is disposed between two first signal lines adjacent to each other and disposed closer to a center line, which divides an area between the two first signal lines into two portions, than the two first signal lines. Thus, signal interference between the first and second signal lines may be reduced, thereby preventing mis-operation or malfunction of the display apparatus. | 10-25-2012 |
| 20130033455 | LIGHT SENSING PANEL AND DISPLAY APPARATUS HAVING THE SAME - A light sensing panel includes sensors arranged in rows and columns, where the sensors receive a first bias voltage and a second bias voltage and output light sensing signals based on light incident thereto; first and second bias lines which transfers the first and second bias voltages, respectively, to the sensors, where each of the first and second bias lines includes a main line and sub lines diverged from the main line and arranged in a second direction corresponding to the columns;, where the sub lines of the first and second bias lines are alternately arranged, and where when two adjacent sub lines are shorted, the shorted sub line of the first bias line is separated from the main line of the first bias line. | 02-07-2013 |
| 20130075763 | DISPLAY APPARATUS AND METHOD OF MANUFACTURING TOUCH SUBSTRATE - A display apparatus includes a first substrate including a plurality of pixels, and a second substrate facing the first substrate, the second substrate comprising a sensor area and a peripheral area, the sensor area comprising a plurality of sensors. The second substrate includes an insulating layer, and a plurality of lines disposed on the insulating layer corresponding to the peripheral area and connected to the sensors. A void is formed in the insulating layer between two adjacent lines of the plurality of lines at a boundary of the sensor area and the peripheral area. | 03-28-2013 |
| 20130229401 | DISPLAY APPARATUS - A display apparatus includes pixels, a driver for providing a driving voltage, and conductive lines including a first line, a second line, and a third line. The display apparatus further includes a first circuit electrically connected to the driver for receiving the driving voltage and electrically connected to the pixels for controlling the pixels. The first circuit includes a first chip, a first inner line, a first pad, a second pad, a third pad, a fourth pad, and a fifth pad. The first chip is electrically connected to the driver through the third pad, the fourth pad, the fifth pad, the third line, the second line, the second pad, the first inner line, the first pad, and the first line. The fourth and fifth pads may contribute to consistent resistance for paths that transmit the driving voltage, for enabling desirable display quality of the display apparatus. | 09-05-2013 |
| 20130271424 | DISPLAY APPARATUS AND METHOD OF DRIVING THE SAME - A display apparatus includes a display panel, sensor circuits, and a detection circuit. Each sensor circuit senses at least two external signals different from each other and outputs a sensing signal. The detection circuit receives the sensing signal to detect a position to which the external signals are applied. Each sensor circuit includes sensors commonly connected to an output terminal, a scan line which receives a scan signal, a capacitor disposed between the scan line and the output terminal, charged with a first voltage in response to the scan signal, and charged with a second voltage greater than the first voltage in response to the current signal after the scan line is floated, a switching device which outputs the sensing signal in response to the second voltage, and a readout line which applies the sensing signal output from the switching device to the detection circuit. | 10-17-2013 |
| 20140175441 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel includes a substrate, an insulation layer, a first semiconductor, and a second semiconductor. The insulation layer is disposed on the substrate and includes a stepped portion. The first semiconductor is disposed on the insulation layer. The second semiconductor is disposed on the insulation layer and includes a semiconductor material different than the first semiconductor. The stepped portion is spaced apart from an edge of the first semiconductor. | 06-26-2014 |
| 20140184942 | DISPLAY HAVING TOUCH SENSING FUNCTION - A panel for a display device is provided. The panel includes a first substrate, a touch sensing circuit formed on the first substrate, the touch sensing circuit including at least one sensing thin film transistor and a connection wire, and a shielding electrode formed covering at least a portion of the sensing thin film transistor and the connection wire. | 07-03-2014 |
| 20140211103 | DISPLAY DEVICE - Touch-related information which cannot be acquired by the naked eye (dubbed here as sub-optical pattern information) has its corresponding sub-optical patterns respectively positioned within the aperture areas of respective domains such that the displayed image, as viewed from different viewing angles is not adversely affected by the embedded sub-optical patterns. One type of touch-related information which can be conveyed is that of touch location of a sub-optical pattern sensing pen positioned over one or more of the sub-optical patterns. | 07-31-2014 |
| 20140247403 | TOUCH DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - A touch display apparatus includes a base substrate, a light blocking semiconductor pattern disposed on the base substrate and configured to block a visible light and transmit an infrared light, a sensing element disposed on the light blocking semiconductor pattern and configured to detect a touch position using an incident infrared light, a driving element configured to drive the sensing element, a signal line electrically connected with the sensing element or the driving element and extending in a direction, and a wiring connecting part disposed under the signal line and including a same material as the light blocking semiconductor pattern. | 09-04-2014 |
| 20140287542 | IR SENSING TRANSISTOR AND MANUFACTURING METHOD OF DISPLAY DEVICE INCLUDING THE SAME - An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer. | 09-25-2014 |
