Patent application number | Description | Published |
20090041095 | METHOD AND APPARATUS FOR FINE FREQUENCY SYNCHRONIZATION IN WIRELESS BROADBAND (WIBRO) SYSTEM WITHOUT USING GLOBAL POSITIONING SYSTEM (GPS) RECEIVER - Provided is a fine frequency synchronization method of a WiBro system, and particularly, a fine frequency synchronization method which measures a spread degree of a received signal of an adjacent subcarrier using orthogonality of PN sequences and thereby estimates a frequency offset, in a base station or a wireless repeater without using a GPS receiver. The fine frequency synchronization method includes: (a) performing despreading on received adjacent subcarrier sequences, using a PN sequence transmitted from a transmitting party; (b) obtaining ratios of correlative values obtained by the despreading; and (c) estimating a frequency offset on the basis of the ratio of correlative values. Accordingly, fine frequency offset estimation with relatively low complexity is possible without using a GPS receiver in a WiBro environment where interference signals of other base stations or repeaters exist. | 02-12-2009 |
20090041097 | APPARATUS AND METHOD FOR NETWORK-CODING - Provided are a network-coding apparatus and method which can increase a data communication capacity in a communication environment to which an error-correction code (ECC) is applied. The network-coding apparatus includes a received signal processing unit receiving at least two signals, and decoding the at least two received signals; and a transmission signal processing unit receiving the at least two decoded signals from the received signal processing unit, merging the at least two decoded signals, and generating a merged transmission signal. | 02-12-2009 |
20100068868 | Wafer temporary bonding method using silicon direct bonding - A wafer temporary bonding method using silicon direct bonding (SDB) may include preparing a carrier wafer and a device wafer, adjusting roughness of a surface of the carrier wafer, and combining the carrier wafer and the device wafer using the SDB. Because the method uses SDB, instead of an adhesive layer, for a temporary bonding process, a module or process to generate and remove an adhesive is unnecessary. Also, a defect in a subsequent process, for example, a back-grinding process, due to irregularity of the adhesive may be prevented. | 03-18-2010 |
20100138055 | Method of controlling a multi-tub washing machine - A method of controlling a washing machine having a first washing tub and a second washing tub, the method having the operations: receiving a first operating command to be performed in the first washing tub; determining whether the operating command can be performed; and when the operating command can be performed, performing the operating command in the first washing tub. | 06-03-2010 |
20100140685 | Nonvolatile Memory Devices - Nonvolatile memory devices and methods of manufacturing nonvolatile memory devices are provided. The method includes patterning a bulk substrate to form an active pillar; forming a charge storage layer on a side surface of active pillar; and forming a plurality of gates connected to the active pillar, the charge storage layer being disposed between the active pillar and the gates. Before depositing a gate, a bulk substrate is etched using a dry etching to form a vertical active pillar which is in a single body with a semiconductor substrate. | 06-10-2010 |
20100224923 | Semiconductor memory device and method of manufacturing the same - Provided are a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device may include a plurality of active pillars projecting from a semiconductor substrate, a gate pattern disposed on at least a portion of each of the active pillars with a gate insulator interposed therebetween, and a conductive line disposed on each of the active pillars and below the corresponding gate pattern, the conductive line may be insulated from the semiconductor substrate and the gate pattern, wherein each of the active pillars may include a drain region above the corresponding gate pattern, a body region adjacent to the corresponding gate pattern, and a source region that is in contact with the conductive line below the gate pattern. | 09-09-2010 |
20100310920 | CENTER PIN FOR SECONDARY BATTERY AND SECONDARY BATTERY INCLUDING THE SAME - A center pin for a secondary battery, and a secondary battery including the same, are disclosed. The center pin is capable of efficiently preventing generation of heat, ignition and explosion of the secondary battery as may be caused by overcharge or exposure to high temperatures. The center pin comprises a body having a predetermined length, a fluid inserted into the body, and sealing members for sealing the body. The secondary battery comprises an electrode assembly including a positive electrode plate, a negative electrode plate and a separator interposed between the positive electrode plate and the negative electrode plate, a center pin comprising a fluid disposed in the electrode assembly, a can accommodating the electrode assembly and the center pin, and a cap assembly sealing the can. | 12-09-2010 |
20110048237 | Air cleaning humidifier - An air cleaning humidifier which minimizes interference or resistance between cleaned air and a disc assembly mounted to the humidifier to perform the humidifying function while the cleaned air is being passed through the disc assembly by a ventilation fan. The air cleaning humidifier includes a body frame having an air discharge port, a water tub disposed in the body frame, a ventilation fan generating an air current in the body frame, and a disc assembly arranged around the ventilation fan and rotated with a part thereof submerged in the water tub. The disc assembly includes a ring portion forming a circumferential body thereof and a cut portion formed by cutting a part of the ring portion and disposed near the air discharge port. | 03-03-2011 |
20110049732 | Humidification apparatus and disc assembly thereof - Disclosed herein are a humidification apparatus having a disc assembly, and a disc assembly thereof. The disc assembly includes at least one disc member assembled by stacking, a first clamp disposed at one side of the at least one disc member, and a second clamp disposed at the other side of the at least one disc member. Each of the at least one disc member includes at least one recess part indented on the edge thereof, and the first clamp includes at least one recess connection part inserted into the at least one recess part so as to prevent movement of the at least one disc member. | 03-03-2011 |
20110084415 | Air cleaning humidifier and disc assembly thereof - Disclosed herein is an air cleaning humidifier having a disc assembly performing a purifying function and a humidifying function of indoor air, and a disc assembly thereof. The air cleaning humidifier includes a main body, a tub provided in the main body, an air blower fan generating an air current in the tub, and a rotatable disc assembly having a part of the disc assembly being disposed in the tub, and including a plurality of stacked discs, each of at least two of the discs including a body, a plurality of assembly parts defined through a surface of the body, first protrusion parts protruded from one surface of the body, and second protrusion parts protruded from the other surface of the body, the body being divided into a plurality of sectors by the plurality of assembly parts, and the first protrusion parts and the second protrusion parts being alternately formed in even-numbered regions, into which each of the plurality of sectors is divided. | 04-14-2011 |
20110207303 | Methods of Fabricating Semiconductor Devices - Methods for fabricating a semiconductor device are provided. In the methods, first material layers and second material layers may be alternatingly and repeatedly stacked on a substrate. An opening penetrating the first material layers and the second material layers may be formed. A semiconductor solution may be formed in the opening by using a spin-on process. | 08-25-2011 |
20110217828 | METHODS OF FABRICATING VERTICAL SEMICONDUCTOR DEVICE UTILIZING PHASE CHANGES IN SEMICONDUCTOR MATERIALS - A method of fabricating a vertical NAND semiconductor device can include changing a phase of a first preliminary semiconductor layer in an opening from solid to liquid to form a first single crystalline semiconductor layer in the opening and then forming a second preliminary semiconductor layer on the first single crystalline semiconductor layer. The phase of the second preliminary semiconductor layer is changed from solid to liquid to form a second single crystalline semiconductor layer that combines with the first single crystalline semiconductor layers to form a single crystalline semiconductor layer in the opening. | 09-08-2011 |
20110248327 | Three-Dimensional Semiconductor Memory Devices and Methods of Forming the Same - Nonvolatile memory devices include a string of nonvolatile memory cells on a substrate. This string of nonvolatile memory cells includes a first vertical stack of nonvolatile memory cells on the substrate and a string selection transistor on the first vertical stack of nonvolatile memory cells. A second vertical stack of nonvolatile memory cells is also provided on the substrate and a ground selection transistor is provided on the second vertical stack of nonvolatile memory cells. This second vertical stack of nonvolatile memory cells is provided adjacent the first vertical stack of nonvolatile memory cells. A conjunction doped semiconductor region is provided in the substrate. This conjunction doped region electrically connects the first vertical stack of nonvolatile memory cells in series with the second vertical stack of nonvolatile memory cells so that these stacks can operate as a single NAND-type string of memory cells. | 10-13-2011 |
20110316064 | Semiconductor Memory Devices And Methods Of Forming The Same - Semiconductor devices and methods of forming the same may be provided. The semiconductor devices may include gate patterns and insulation patterns repeatedly and alternatingly stacked on a substrate. The semiconductor devices may also include a through region penetrating the gate patterns and the insulation patterns. The semiconductor devices may further include a channel structure extending from the substrate through the through region. The channel structure may include a first channel pattern having a first shape. The first channel pattern may include a first semiconductor region on a sidewall of a portion of the through region, and a buried pattern dividing the first semiconductor region. The channel structure may also include a second channel pattern having a second shape. The second channel pattern may include a second semiconductor region in the through region. A grain size of the second semiconductor region may be larger than that of the first semiconductor region. | 12-29-2011 |
20120009747 | Methods of Manufacturing Nonvolatile Memory Devices - Nonvolatile memory devices and methods of manufacturing nonvolatile memory devices are provided. The method includes patterning a bulk substrate to form an active pillar; forming a charge storage layer on a side surface of active pillar; and forming a plurality of gates connected to the active pillar, the charge storage layer being disposed between the active pillar and the gates. Before depositing a gate, a bulk substrate is etched using a dry etching to form a vertical active pillar which is in a single body with a semiconductor substrate. | 01-12-2012 |
20130133351 | AIR CONDITIONER - An air conditioner includes a body installed at an outdoor space, and an air discharge tube to guide cold air discharged from the body to an indoor space. An evaporator and a condenser are installed in the body. The evaporator is disposed at a higher level than the condenser. Accordingly, it possible to transfer condensed water generated from the evaporator to the condenser by gravity. | 05-30-2013 |
20130199237 | OUTDOOR UNIT AND AIR CONDITIONER HAVING THE SAME - An outdoor unit allows the position of the service valve to be changed in order to adapt the outdoor unit to various environments in which the outdoor unit is installed. The outdoor unit of an air conditioner includes a body, a compressor disposed inside the body to compress a refrigerant, an outdoor heat exchanger to cause heat exchange between the refrigerant compressed by the compressor and outdoor air, at least one service valve to regulate the refrigerant flowing into the outdoor heat exchanger, and a guide portion provided at the body to guide a positional shift of the service valve. | 08-08-2013 |
20140000852 | INDOOR UNIT OF AIR CONDITIONER AND METHOD OF CONTROLLING THE AIR CONDITIONER | 01-02-2014 |
20140162440 | SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FORMING THE SAME - Methods of forming semiconductor devices may be provided. A method of forming a semiconductor device may include patterning first and second material layers to form a first through region exposing a substrate. The method may include forming a first semiconductor layer in the first through region on the substrate and on sidewalls of the first and second material layers. In some embodiments, the method may include forming a buried layer filling the first through region on the first semiconductor layer. In some embodiments, the method may include removing a portion of the buried layer to form a second through region between the sidewalls of the first and second material layers. Moreover, the method may include forming a second semiconductor layer in the second through region. | 06-12-2014 |
20140352352 | OUTDOOR HEAT EXCHANGER AND AIR CONDITIONER - An outdoor heat exchanger has a total length of refrigerant flow passage in which a refrigerant flows along a refrigerant tube, and exchanges heat with outdoor air, the outdoor heat exchanger including a plurality of refrigerant tubes spaced apart from one another, a first and second header respectively coupled to both end portions of each of the refrigerant tubes, and a plurality of heat exchanging fins coupled to outer surfaces of the refrigerant tubes to widen a surface making contact with an outside, wherein a total length of a refrigerant flow passage in which a refrigerant flows along the refrigerant tube and exchanges heat with outdoor air is equal to or greater than about 1500 mm and equal to or less than about 6000 mm, in which range, the outdoor heat exchange achieves the optimum performance. | 12-04-2014 |