Juncheng
Juncheng Peng, Dongguan City CN
Patent application number | Description | Published |
---|---|---|
20150335127 | HAIR DRYER - A hair dryer includes a heater, a fan, a motor for driving the fan, a body case that accommodates the heater, the fan, and the motor, and a thermal barrier tube disposed between the body case and the heater. The diameter of the fan is allowed to be 90 mm or more, and an air quantity formed by the fan is allowed to be 1.0 m | 11-26-2015 |
Juncheng Wang, Shanghai CN
Patent application number | Description | Published |
---|---|---|
20100039151 | Phase Locked Loop, Lock Detector and Lock Detection Method - The present invention discloses a PLL, a lock detector thereof and a lock detection method. The lock detector includes: a first detecting unit, adapted to compare a counting value of a reference clock signal with a counting value of a feedback clock signal every first interval and output a valid first prelock signal when the counting value of the reference clock signal is equal to the counting value of the feedback clock signal; a second detecting unit, adapted to output a valid second prelock signal when the counting value of the reference clock signal is equal to the counting value of the feedback clock signal during a second interval which is at least two times higher than the first interval; a third detecting unit, adapted to output a valid lock signal if the first prelock signal output from the first detecting unit every first interval is valid and the second prelock signal output from the second detecting unit is valid during the second interval. The PLL, lock detector thereof and lock detection method can detect the lock state quickly and correctly. | 02-18-2010 |
Juncheng Xiao, Guangdong CN
Patent application number | Description | Published |
---|---|---|
20150310819 | Gate Driver for Narrow Bezel LCD - The present invention proposes a gate driver which simplifies a circuit structure by effectively compounding the pull-down holding circuit and signals to achieve a design for ultra-narrow bezel gate driver. In addition, It effectively lessens voltage offset at the second node and prolongs GOA circuit operating time to prolongs lifetime of the LCD when the seventh transistor of the first pull-down holding circuit adopts equivalent diode connection. At last, it reduces RC delay to efficiently lower power-consumption to more effectively decrease LCD energy-consumption when amount of transistors and signals of the first and the second pull-down holding circuits decreases. | 10-29-2015 |
Juncheng Xiao, Shenzhen CN
Patent application number | Description | Published |
---|---|---|
20150371599 | GATE DRIVING CIRCUIT - The present invention relates to a gate driving circuit including a multiple of gate driving units. Each of the gate driving units comprises a pull-up control part, a pull-up part, a transfer part, a key pull-down part, a pull-down holding part and a boost part. In this case, the key pull-down part and the transfer part are configured, respectively, to pull potential on a gete signal output end down to and hold potentials on the control ends of the pull-up part and the transfer part at a potential of the first power supply or the second power supply, and also to pull potential on the output end of the transfer part ransfer signal down to and/or hold at a potential of the second power supply, wherein the potential of the second power supply is lower than that of the first power supply. | 12-24-2015 |
20160086558 | DISPLAY PANEL AND DRIVING METHOD THEREOF - A display panel and a driving method thereof are disclosed. A thin film transistor array substrate of the display panel comprises pixel elements, scan lines, data lines, and a driving circuit; a first scan line and a second scan line are both connected to the pixel elements; the data lines are connected the pixel elements of a pixel column; the driving circuit operates to produce a second driving signal in accordance with a first driving signal; the pixel elements connected to the first scan line and the second line are staggered. Thus, uneven charging can be avoided. | 03-24-2016 |
20160126947 | GOA CIRCUIT BASED ON LTPS SEMICONDUCTOR TFT - The present invention provides a GOA circuit based on LTPS semiconductor TFT, comprising a plurality of GOA units which are cascade connected, and N is set to be a positive integer and an Nth GOA unit comprises a pull-up control part ( | 05-05-2016 |
Juncheng Xiao, Shenzhen, Guangdong CN
Patent application number | Description | Published |
---|---|---|
20160125828 | GOA CIRCUIT OF LTPS SEMICONDUCTOR TFT - The present invention provides a GOA circuit of LTPS semiconductor TFT, employed for forward scan transmission, comprising a plurality of GOA units which are cascade connected, and N is set to be a positive integer and an Nth GOA unit utilizes a plurality of N-type transistors and a plurality of P-type transistors and comprises a transmission part ( | 05-05-2016 |
20160125830 | GOA CIRCUIT BASED ON LTPS SEMICONDUCTOR TFT - The present invention provides a GOA circuit based on LTPS semiconductor TFT, comprising a plurality of GOA units which are cascade connected, and N is set to be a positive integer and an Nth GOA unit comprises a pull-up control part ( | 05-05-2016 |
20160125831 | GOA CIRCUIT OF LTPS SEMICONDUCTOR TFT - The present invention provides a GOA circuit of LTPS semiconductor TFT, employed for backward scan transmission, comprising a plurality of GOA units which are cascade connected, and N is set to be a positive integer and an Nth GOA unit utilizes a plurality of N-type transistors and a plurality of P-type transistors and the Nth GOA unit comprises a transmission part ( | 05-05-2016 |
20160126948 | GOA CIRCUIT BASED ON LTPS SEMICONDUCTOR TFT - The present invention provides a GOA circuit based on LTPS semiconductor TFT, comprising a plurality of GOA units which are cascade connected, and N is set to be a positive integer and an Nth GOA unit comprises a pull-up control part ( | 05-05-2016 |
Juncheng Zhu, Sichuan CN
Patent application number | Description | Published |
---|---|---|
20150235775 | Electrode material, preparation method thereof and supercapacitor based thereof - The disclosure discloses electrode material, preparation methods thereof and supercapacitors based thereof. Raw material for preparing the electrode material include PVDF and an additive which can be reacted with the PVDF to generate conductive active substance, the amount of the PVDF is 50 to 99 mass percentage, and the amount of the additive is 1 to 50 mass percentage. A PVDF-based composite film can be prepared from the raw materials; and activating treatment is performed on the film by virtue of a physico-chemical process, so that PVDF can generate a conductive active substance, the contact resistance of the PVDF and the active substance is reduced, and the conductive active substance is distributed in the PVDF-based composite film more uniformly. Button and wound supercapacitor and flexible capacitor, which are prepared from the electrode material, are high in power density and energy density, long in cycle life. | 08-20-2015 |