Patent application number | Description | Published |
20090203227 | Film Formation method and apparatus for forming silicon-containing insulating film - A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including di-iso-propylaminosilane gas and a second process gas including an oxidizing gas or nitriding gas. The film is formed by performing a plurality of times a cycle alternately including first and second steps. The first step performs supply of the first process gas, thereby forming an adsorption layer containing silicon on a surface of the target substrate. The second performs supply of the second process gas, thereby oxidizing or nitriding the adsorption layer on the surface of the target substrate. The second step includes an excitation period of supplying the second process gas to the process field while exciting the second process gas by an exciting mechanism. | 08-13-2009 |
20100081094 | MASK PATTERN FORMING METHOD, FINE PATTERN FORMING METHOD, AND FILM DEPOSITION APPARATUS - In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus. | 04-01-2010 |
20100319619 | OXIDATION METHOD AND APPARATUS FOR SEMICONDUCTOR PROCESS - In an oxidation method for a semiconductor process, target substrates are placed at intervals in a vertical direction within a process field of a process container. An oxidizing gas and a deoxidizing gas are supplied to the process field from one side of the process field while gas is exhausted from the other side. One or both of the oxidizing gas and the deoxidizing gas are activated. The oxidizing gas and the deoxidizing gas are caused to react with each other, thereby generating oxygen radicals and hydroxyl group radicals within the process field. An oxidation process is performed on the surfaces of the target substrate by use of the oxygen radicals and the hydroxyl group radicals. | 12-23-2010 |
20110151679 | FILM FORMATION METHOD FOR FORMING SILICON-CONTAINING INSULATING FILM - A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including di-iso-propylaminosilane gas and a second process gas including an oxidizing gas or nitriding gas. The film is formed by performing a plurality of times a cycle alternately including first and second steps. The first step performs supply of the first process gas, thereby forming an adsorption layer containing silicon on a surface of the target substrate. The second performs supply of the second process gas, thereby oxidizing or nitriding the adsorption layer on the surface of the target substrate. The second step includes an excitation period of supplying the second process gas to the process field while exciting the second process gas by an exciting mechanism. | 06-23-2011 |
Patent application number | Description | Published |
20100272989 | ELASTOMER POROUS MATERIAL AND METHOD OF PRODUCING THE SAME - In the elastomer porous material of the invention, when cells in a first observation region of a first cross section are observed at a certain magnification, cells having a shape factor SF1, which indicates the roundness of a circle and is represented by the following formula: | 10-28-2010 |
20100305225 | ELASTOMER POROUS MATERIAL AND METHOD OF PRODUCING THE SAME - In the elastomer porous material of the invention, when cells in a first observation region of a first cross section are observed at a certain magnification, cells having a shape factor SF | 12-02-2010 |
20100311851 | ELASTOMER POROUS MATERIAL AND METHOD OF PRODUCING THE SAME - In the elastomer porous material of the invention, when cells in a first observation region of a first cross section are observed at a certain magnification, cells having an aspect ratio a/b, wherein a represents the maximum diameter of each cell and b represents the length of the minor axis of that cell as measured in a direction orthogonal thereto, of 1.3 or less account for 70% or more of all cells in the first observation region, and, when cells in a second observation region of a second cross section orthogonal to the first cross section are observed at a certain magnification, cells having an aspect ratio a/b, wherein a represents the maximum diameter of each cell and b represents the length of the minor axis of that cell as measured in a direction orthogonal thereto, of 1.3 or less account for 70% or more of all cells in the second observation region. | 12-09-2010 |
20120327375 | ILLUMINATION DEVICE AND PROJECTION DISPLAY DEVICE USING THE SAME - An illumination device includes a light source that is configured to emit diffused light, and a plurality of light guiding bodies configured such that the light emitted by light source is entered from one end surface and the light is exited from other end surface. End surface of each light guiding body is arranged into a concave shape, and end surface is arranged into a planar shape. | 12-27-2012 |
Patent application number | Description | Published |
20080198766 | NETWORK RECONFIGURATION METHOD AND ROUTER - Disclosed is a method for reconfiguring a network including a plurality of routers each having a redundant function. | 08-21-2008 |
20090201814 | COMMUNICATION CONTROL APPARATUS, COMMUNICATION CONTROL METHOD, RECORDING MEDIUM STORING COMMUNICATION CONTROL PROGRAM - A communication control apparatus has a setting unit for setting a receiving filter for discarding a broadcast frame received continuously not less than a predetermined threshold during a predetermined N number of time slots. | 08-13-2009 |
20100088764 | RELAY DEVICE AND RELAY METHOD - An apparatus relays packets transferred over a network and discards an attack packet detected among the packets. The apparatus includes: an inspection-packet outputting unit that outputs, when detecting the attack packet, an inspection packet in which a transmission-source address contained in the attack packet is set as a destination address and a destination address contained in the attack packet is set as a transmission-source address; a filter table storing unit that stores, when acquiring a response packet for the inspection packet, a transmission-source address, a destination address, and identification information of an interface, which has received the response packet, that are contained in the response packet, in a filter table in an associated manner; and a transfer control unit that determines whether to transfer a packet as a transfer object based on the filter table. | 04-08-2010 |
20100118710 | NETWORK FAILURE DETECTING METHOD AND DEVICE - A network failure detecting method for detecting a failure of a network including a number of transferring devices by tracing data flow rates of the transferring devices based on physical topologies of the transferring devices for the network, composing a group of the transferring devices adjacent to one another, data flow rates of which have failed to be obtained, as one virtual transferring device; and replacing physical topologies of the group of the transferring devices adjacent to one another, data flow rates of which have failed to be obtained, with a physical topology of the composed virtual transferring device. | 05-13-2010 |
Patent application number | Description | Published |
20090275092 | METHOD FOR PRODUCING 4-HYDROXY-L-ISOLEUCINE - A highly active L-isoleucine dioxygenase from | 11-05-2009 |
20120107883 | METHOD FOR PRODUCING 4-HYDROXY-L-ISOLEUCINE - A highly active L-isoleucine dioxygenase from | 05-03-2012 |
20120107884 | METHOD FOR PRODUCING 4-HYDROXY-L-ISOLEUCINE - A highly active L-isoleucine dioxygenase from | 05-03-2012 |
20120115203 | METHOD FOR PRODUCING 4-HYDROXY-L-ISOLEUCINE - A highly active L-isoleucine dioxygenase from | 05-10-2012 |
20120264960 | NOVEL ACETYL-CoA CARBOXYLASE - The present invention provides a novel acetyl-CoA carboxylase. The object of the present invention is attained by the nucleotide sequence of SEQ ID NO: 1 and the amino acid sequence of SEQ ID NO: 2 of the present invention. | 10-18-2012 |
20150125911 | METHOD FOR PRODUCING OXO FATTY ACID AND RARE FATTY ACID - The present invention provides a production method of oxo fatty acid, as well as rare fatty acids such as conjugated fatty acid, hydroxylated fatty acid, partially saturated fatty acid and the like, which uses 4 kinds of enzymes (fatty acid-hydratase, hydroxylated fatty acid-dehydrogenase, oxo fatty acid-isomerase, oxo fatty acid-enone reductase) derived from | 05-07-2015 |
20150344851 | RECOMBINANT MICROORGANISM AND METHOD FOR PRODUCING A SUBSTANCE USING THE SAME - This invention provides a recombinant microorganism into which an acyl-CoA reductase exhibiting excellent activity in a reduction reaction using acyl-CoA as a substrate has been introduced. Such recombinant microorganism comprises a nucleic acid encoding an acyl-CoA reductase comprising any of characteristic Common sequences 1 to 3 introduced into a host microorganism. | 12-03-2015 |
20150344913 | RECOMBINANT MICROORGANISM AND METHOD FOR PRODUCING A SUBSTANCE USING THE SAME - This invention provides a recombinant microorganism into which an acyl-CoA reductase exerting excellent activity in a reduction reaction involving the use of acyl-CoA as a substrate has been introduced. Such recombinant microorganism comprises a nucleic acid encoding a protein (a) or (b) below introduced into a host microorganism: (a) a protein comprising the amino acid sequence of SEQ ID NO: 2; or (b) a protein comprising an amino acid sequence having 70% or higher identity to the amino acid sequence of SEQ ID NO: 2 and having activity for synthesizing an aldehyde compound from acyl-CoA. | 12-03-2015 |
Patent application number | Description | Published |
20080269329 | Process for Production of Microbial Fat/Oil Containing Discretional Amount of Diacylglycerol and Said Fat/Oil - In a process for the production of diacylglycerol-containing fat/oil where the ratio of diacylglycerol to the total neutral lipid is more than 20% by weight and a polyunsaturated fatty acid is a constituting fatty acid, a process which is characterized in that a microbe being able to produce said fat/oil is incubated and, if desired, said fat/oil is collected. | 10-30-2008 |
20080297202 | SEMICONDUCTOR INTEGRATED CIRCUIT AND INFORMATION PROCESSING SYSTEM - In a semiconductor integrated circuit, a counter counts the number of high-speed clock signals that have been generated in a predetermined number of clock cycles of a low-speed clock signal. In synchronization with the low-speed clock signal, the semiconductor integrated circuit compares the counter value and a predetermined value, and judges whether the frequency of the high-speed clock signal has reaches a predetermined frequency. Since variations in the frequency become smaller as the oscillation of a high-speed oscillator stabilizes, the semiconductor integrated circuit detects that the oscillation is stable when the semiconductor integrated circuit has judged affirmatively a plurality of times. | 12-04-2008 |
20110243276 | WIRELESS DEMODULATION CIRCUIT - Positions of a group of points of code shift including a plurality of points of code shift and present in each code-shift site of a multi-valued FSK code are identified, a point of code shift correction amount including an amount of displacement between a center point of code shift centered among the group of points of code shift in a direction of time axis and each of the points of code shift is calculated based on the identified positions of the points of code shift, and the point of code shift is corrected on a time axis based on the calculated point of code shift correction amount. | 10-06-2011 |
Patent application number | Description | Published |
20130164945 | FILM DEPOSITION METHOD - A film deposition method includes an adsorption step of adsorbing a first reaction gas onto a substrate by supplying the first reaction gas from a first gas supplying portion for a predetermined period without supplying a reaction gas from a second gas supplying portion while separating a first process area and a second process area by supplying a separation gas from a separation gas supplying portion and rotating a turntable; and a reaction step of having the first reaction gas adsorbed onto the substrate react with a second reaction gas by supplying the second reaction gas from the second gas supplying portion for a predetermined period without supplying a reaction gas from the first gas supplying portion while separating the first process area and the second process area by supplying the separation gas from the separation gas supplying portion and rotating the turntable. | 06-27-2013 |
20130337658 | FILM DEPOSITION METHOD - A film deposition method includes a first step and a second step. In the first step, a first reaction gas is supplied from a first gas supply part to a first process area, and a second reaction gas capable of reacting with the first reaction gas is supplied from a second gas supply part to a second process area, while rotating a turntable and supplying a separation gas to separate the first process area and the second process area from each other. In the second step, the second reaction gas is supplied from the second gas supply part to the second process area without supplying the first reaction gas from the first gas supply part for a predetermined period, while rotating the turntable and supplying the separation gas to separate the first process area and the second process area from each other. | 12-19-2013 |
20140011353 | FILM DEPOSITION METHOD - A film deposition method is provided. A first metal compound film is deposited by performing a first cycle of exposing a substrate to a first source gas containing a first metal, and of exposing the substrate to a reaction gas reactive with the first source gas. Next, the first source gas is adsorbed on the first metal compound film by exposing the substrate having the first metal compound film deposited thereon to the first source gas. Then, a second metal compound film is deposited on the substrate by performing a second cycle of exposing the substrate having the first source gas adsorbed thereon to a second source gas containing a second metal, and of exposing the substrate to the reaction gas reactive with the second source gas. | 01-09-2014 |
Patent application number | Description | Published |
20130213301 | MASK PATTERN FORMING METHOD, FINE PATTERN FORMING METHOD, AND FILM DEPOSITION APPARATUS - In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus. | 08-22-2013 |
20140147591 | FILM DEPOSITION METHOD, STORAGE MEDIUM, AND FILM DEPOSITION APPARATUS - A film deposition method includes rotating a rotary table by a first angle while supplying a separation gas from a separation gas supplying part and a first reaction gas from a first gas supplying part; supplying a second reaction gas from a second gas supplying part and rotating the rotary table by a second angle while supplying the separation gas from the separation gas supplying part and the first reaction gas from the first gas supplying part; rotating the rotary table by a third angle while supplying the separation gas from the separation gas supplying part and the first reaction gas from the first gas supplying part; and supplying a third reaction gas from the second gas supplying part and rotating the rotary table by a fourth angle while supplying the separation gas and the first reaction gas. | 05-29-2014 |
20140179120 | METHOD OF DEPOSITING A FILM - A method of depositing a film of forming an oxide film containing a predetermined element on substrates using an apparatus including a turntable mounting substrates, first and second process areas above the upper surface of the turntable provided with gas supplying portions, a separation gas supplying portion between the first and second process areas, and a separation area including depositing the oxide film by rotating the turntable while supplying a reaction gas containing the predetermined element, the oxidation gas from the second gas supplying portion, and the separation gas; and rotating at least one turn while supplying the separation gas from the first gas supplying portion and the separation gas supplying portion, and the oxidation gas from the second gas supplying portion. | 06-26-2014 |
20140179121 | METHOD OF DEPOSITING A FILM - A method of depositing a film on substrates using an apparatus including a turntable mounting substrates, first and second process areas above the upper surface of the turntable provided with gas supplying portions, a separation gas supplying portion between the first and second process areas, and a separation area including depositing a first oxide film by rotating the turntable first turns while supplying a first reaction gas, the oxidation gas from the second gas supplying portion, and the separation gas; rotating at least one turn while supplying the separation gas from the first gas supplying portion and the separation gas supplying portion, and the oxidation gas from the second gas supplying portion; and rotating at least second turns to deposit a second oxide film while supplying a second reaction gas from the first gas supplying portion, the oxidation gas from the second gas supplying portion, and the separation gas. | 06-26-2014 |
20140179122 | METHOD OF DEPOSITING A FILM - A method of depositing a film of forming a doped oxide film including a first oxide film containing a first element and doped with a second element on substrates mounted on a turntable including depositing the first oxide film onto the substrates by rotating the turntable predetermined turns while a first reaction gas containing the first element is supplied from a first gas supplying portion, an oxidation gas is supplied from a second gas supplying portion, and a separation gas is supplied from a separation gas supplying portion, and doping the first oxide film with the second element by rotating the turntable predetermined turns while a second reaction gas containing the second element is supplied from one of the first and second gas supplying portions, an inert gas is supplied from another one, and the separation gas is supplied from the separation gas supplying portion. | 06-26-2014 |
Patent application number | Description | Published |
20150107517 | Plasma Processing Apparatus - A plasma processing apparatus includes a plasma generation chamber in which plasma active species are generated, a process chamber configured to accommodate processing target objects stacked in a vertical direction, the plasma active species generated in the plasma generation chamber being supplied into the process chamber, a plasma source gas supply pipe disposed inside the plasma generation chamber and extending in the vertical direction, a plasma source gas being introduced from one end of the plasma source gas supply pipe and discharged through gas discharge holes formed in the plasma source gas supply pipe in the vertical direction, and a pair of plasma electrodes, arranged to face each other, configured to apply an electric field to the plasma source gas discharged into the plasma generation chamber. A size of a discharge area interposed between the pair of plasma electrodes is varied in the vertical direction. | 04-23-2015 |
20150228473 | Method and Apparatus for Forming Metal Oxide Film - A metal oxide film forming method includes: repeating a cycle a first predetermined number of times, the cycle including supplying a gas containing an organic metal precursor into a processing chamber where an object to be processed is accommodated, and supplying oxygen gas into the processing chamber after the gas containing the organic metal precursor is supplied into the processing chamber; and supplying ozone gas into the processing chamber, wherein repeating the cycle and supplying the ozone gas are repeated a second predetermined number of times, so that a metal oxide film is formed on a surface of the object to be processed. | 08-13-2015 |