Patent application number | Description | Published |
20080244339 | Read level control apparatuses and methods - Various read level control apparatuses and methods are provided. In various embodiments, the read level control apparatuses may include an error control code (ECC) decoding unit for ECC decoding data read from a storage unit, and a monitoring unit for monitoring a bit error rate (BER) based on the ECC decoded data and the read data. The apparatus may additionally include an error determination unit for determining an error rate of the read data based on the monitored BER, and a level control unit for controlling a read level of the storage unit based on the error rate. | 10-02-2008 |
20080273405 | Multi-bit programming device and method of multi-bit programming - A multi-bit programming device and method for a non-volatile memory are provided. In one example embodiment, a multi-bit programming device may include a multi-bit programming unit configured to multi-bit program original multi-bit data to a target memory cell in a memory cell array, and a backup programming unit configured to select backup memory cells in the memory cell array with respect to each bit of the original multi-bit data, and program each bit of the original multi-bit data to a respective one of the selected backup memory cells. | 11-06-2008 |
20080276149 | Error control code apparatuses and methods of using the same - An Error Control Code (ECC) apparatus may include a control signal generator that generates an ECC control signal based on channel information. The ECC apparatus also may include: a plurality of ECC encoding controllers that output data respectively inputted via storage elements corresponding to the ECC control signal; and/or an encoding unit that encodes, using a plurality of data outputted from the plurality of ECC encoding controllers, encoding input data into a number of subdata corresponding to the ECC control signal. In addition or in the alternative, the ECC apparatus may include: a plurality of ECC decoding controllers that output data respectively inputted via the storage elements corresponding to the ECC control signal; and/or a decoding unit that decodes, using a plurality of data outputted from the plurality of ECC decoding controllers, a number of decoding input data corresponding to the ECC control signal into one piece of output data. | 11-06-2008 |
20080276150 | ERROR CONTROL CODE APPARATUSES AND METHODS OF USING THE SAME - An Error Control Code (ECC) apparatus applied to a memory of a Multi-Level Cell (MLC) method may include: a bypass control signal generator generating a bypass control signal; and an ECC performing unit that may include at least two ECC decoding blocks, determining whether to bypass a portion of the at least two ECC decoding blocks based on the bypass control signal, and/or performing an ECC decoding. In addition or in the alternative, the ECC performing unit may include at least two ECC encoding blocks, determining whether to bypass a portion of the at least two ECC encoding blocks based on the bypass control signal, and/or performing an ECC encoding. An ECC method applied to a memory of a MLC method and a computer-readable recording medium storing a program for implementing an EEC method applied to a memory of a MLC method are also disclose. | 11-06-2008 |
20080285340 | Apparatus for reading data and method using the same - Disclosed are an apparatus and a method for reading data. The method for reading data according to example embodiments includes comparing a threshold voltage of a memory cell with a first boundary voltage, comparing the threshold voltage with a second boundary voltage having a higher voltage level than that of the first boundary voltage, and determining data of the memory cell based on the threshold voltage, the first boundary voltage, and the second boundary voltage. | 11-20-2008 |
20080285343 | Memory cell programming method and semiconductor device for simultaneously programming a plurality of memory block groups - Provided are a memory cell programming method and a semiconductor device which may be capable of simultaneously writing a bit of data and then another bit of the data to a plurality of memory blocks. The memory programming method, in which M bits of data are written to a plurality of memory blocks, may include a data division operation and a data writing operation where M may be a natural number. In the data division operation, the plurality of memory blocks may be divided into a plurality of memory block groups. In the data writing operation, an i | 11-20-2008 |
20080285352 | Method of writing/reading data into/from memory cell and page buffer using different codes for writing and reading operations - Provided are a method of writing/reading data into/from a memory cell and a page buffer using different codes for the writing and reading operations. The method of writing/reading data into/from a memory cell that has a plurality of threshold voltage distributions includes a data writing operation and a data reading operation. In the data writing operation, data having a plurality of bits is written into the memory cell by using a plurality of writing codes corresponding to threshold voltage distributions. In the data reading operation, the data having a plurality of bits is read from the memory cell by using reading codes corresponding to the threshold voltage distributions from among the threshold voltage distributions. In the method of writing/reading data into/from a memory cell, a part of the writing codes is different from a corresponding part of the reading codes. | 11-20-2008 |
20080288849 | Apparatus for generating soft decision values and method thereof - According to an example embodiment, a method of generating a soft decision value using an Analog-to-Digital Converter (ADC) having a given resolution may include receiving metric values calculated based on levels of a transmission signal and output levels of the ADC. Metric values corresponding to a level of a received signal may be selected from among the received metric values. A first maximum metric value may be detected from among the selected metric values when a transmission bit is a first level, and a second maximum metric value may be detected from among the selected metric values when the transmission bit is a second level. The soft decision value may be generated based on a difference between the first maximum metric value and the second maximum metric value. | 11-20-2008 |
20080288853 | Apparatus and method of puncturing of error control codes - A code puncturing apparatus and method is provided. The apparatus includes: a codeword selection unit selecting continuous n−1-number of mother codewords from mother codewords generated from k-bit effective information, where k denotes a natural number, and one redundancy bit; and a puncturing unit selecting k-number of redundancy bits from redundancy bits included in the n−1-number of mother codewords, deleting remaining redundancy bits, and rearranging the n−1-number of mother codewords into an n·k bit-target codeword. Accordingly, a code rate of an Error Control Code (ECC) can be raised. | 11-20-2008 |
20080304323 | Method and apparatus for programming data of memory cells considering floating poly coupling - A method and an apparatus for programming data of memory cells considering coupling are provided. The method includes: calculating a change of a threshold voltage based on source data of the memory cells; converting source data which will be programmed based on the calculated change of the threshold voltage; and programming the converted source data. | 12-11-2008 |
20080320064 | Method and apparatus for controlling reading level of memory cell - A method and apparatus for controlling a reading level of a memory cell are provided. The method of controlling a reading level of a memory cell may include: receiving metric values calculated based on given voltage levels and reference levels; generating summed values for each of the reference levels by summing metric values corresponding to levels of a received signal from among the received metric values; selecting the reference level having the greatest value of the generated summed values from the reference levels; and controlling the reading level of the memory cell based on the selected reference level. | 12-25-2008 |
20090027238 | Apparatuses and methods for encoding and decoding - A code encoding apparatus includes a delay circuit and a code generator. The delay circuit generates delayed information based on p-bit input information received in parallel. The delayed information is generated according to a clock. The code generator generates n·p-bit code based on at least one of the input information and the delayed information, where n is a rational number. | 01-29-2009 |
20090027971 | Apparatuses, computer program products and methods for reading data from memory cells - In reading data from a memory cell, a determining circuit determines whether a received voltage value is within at least one first voltage range through a one-time read operation using a semiconductor device that senses an output current corresponding to the received voltage value. The at least one first voltage range includes a first upper limit voltage value and a first lower limit voltage value. A data value of the memory cell is set as a first data value when the received voltage value is within the specific voltage range. | 01-29-2009 |
20090046510 | Apparatus and method for multi-bit programming - Multi-bit programming apparatuses and methods are provided. A multi-bit programming apparatus may include: a first programming unit that stores data corresponding to a number of first bits in at least one first memory cell that may be connected to at least one first bit line; and a second programming unit that stores data corresponding to a number of second bits in at least one second memory cell that may be connected to at least one second bit line. Through this, it may be possible to improve data reliability and increase a number of bits to be stored in the entire memory cell. | 02-19-2009 |
20090067237 | MULTI-BIT DATA MEMORY SYSTEM AND READ OPERATION - Provided is a read operation for a N-bit data non-volatile memory system. The method includes determining in relation to data states of adjacent memory cells associated with a selected memory cell in the plurality of memory cells whether read data obtained from the selected memory cell requires compensation, and if the read data requires compensation, replacing the read data with compensated read data. | 03-12-2009 |
20090070656 | MEMORY SYSTEM WITH ERROR CORRECTION DECODER ARCHITECTURE HAVING REDUCED LATENCY AND INCREASED THROUGHPUT - A memory system includes: a memory controller including an error correction decoder. The error correction decoder includes: a demultiplexer adapted to receive data and demultiplex the data into a first set of data and a second set of data; first and second buffer memories for storing the first and second sets of data, respectively; an error detector; an error corrector; and a multiplexer adapted to multiplex the first set of data and the second set of data and to provide the multiplexed data to the error corrector. While the error corrector corrects errors in the first set of data, the error detector detects errors in the second set of data stored in the second buffer memory. | 03-12-2009 |
20090091990 | Apparatus and method of multi-bit programming - Disclosed are a multi-bit programming apparatus and a multi-bit programming method. The multi-bit programming apparatus may include a first control unit that may generates 2 | 04-09-2009 |
20090091991 | Apparatuses and methods for multi-bit programming - Multi-bit programming apparatuses and methods are provided. A multi-bit programming apparatus includes a page buffer configured to store first data of the page programming operation, an input control unit configured to determine whether to invert the first data based on a number of bits having a first value and a number of bits having a second value. The input control unit is further configured to invert the first data to generate second data if the number of bits having a first value is greater than the number of bits having a second value and store the second data in the page buffer. The multi-bit programming apparatus further includes a page programming unit configured to program the second data stored in the page buffer in at least one multi-bit cell. | 04-09-2009 |
20090103359 | Apparatus and method of multi-bit programming - Multi-bit programming apparatuses and/or methods are provided. A multi-bit programming apparatus may comprise: a multi-bit cell array that includes a first multi-bit cell and a second multi-bit cell; a programming unit for programming first data in the first multi-bit cell, and programming second data in the second multi-bit cell; and a verification unit for verifying whether the first data is programmed in the first multi-bit cell using a first verification voltage, and verifying whether the second data is programmed in the second multi-bit cell using a second verification voltage. The multi-bit programming apparatus may generate better threshold voltage distributions in a multi-bit cell memory. | 04-23-2009 |
20090106637 | Concatenated decoder and concatenated decoding method - A concatenated decoder and concatenated decoding method are provided. The concatenated decoder, including: an inner decoder to receive an input bit stream, inner-decode the received input bit stream, and generate a first bit stream; and an outer decoder to generate error information about the received first bit stream, according to the generated error information, transmit an iterative decoding continuation request to the inner decoder or outer-decode the first bit stream to generate a second bit stream. | 04-23-2009 |
20090109748 | Apparatus and method of multi-bit programming - Multi-bit programming apparatuses and/or methods are provided. A multi-bit programming apparatus may include: a first control unit that allocates any one of 2 | 04-30-2009 |
20090175076 | Memory device and method for estimating characteristics of multi-bit cell - Memory devices and/or methods that may estimate characteristics of multi-bit cell are provided. A memory device may include: a multi-bit cell array; a monitoring unit to extract a threshold voltage change over time value for reference threshold voltage states selected from a plurality of threshold voltage states corresponding to data stored in the multi-bit cell array; and an estimation unit to estimate a threshold voltage change over time values for the plurality of threshold voltage states based on the extracted threshold voltage change. Through this, it is possible to monitor a change over time of threshold voltages of a memory cell. | 07-09-2009 |
20090177931 | Memory device and error control codes decoding method - Memory devices and/or error control codes (ECC) decoding methods may be provided. A memory device may include a memory cell array, and a decoder to perform hard decision decoding of first data read from the memory cell array by a first read scheme, and to generate output data and error information of the output data. The memory device may also include and a control unit to determine an error rate of the output data based on the error information, and to determine whether to transmit an additional read command for soft decision decoding to the memory cell array based on the error rate. An ECC decoding time may be reduced through such a memory device. | 07-09-2009 |
20090182934 | Memory device and method of multi-bit programming - Memory devices and multi-bit programming methods are provided. A memory device may include a plurality of memory units; a data separator that separates data into a plurality of groups; a selector that rotates each of the plurality of groups and transmits each of the groups to at least one of the plurality of memory units. The plurality of memory units may include page buffers that may program the transmitted group in a plurality of multi-bit cell arrays using a different order of a page programming operation. Through this, evenly reliable data pages may be generated. | 07-16-2009 |
20090185417 | Apparatus and method of memory programming - A memory programming apparatuses and/or methods are provided. The memory programming apparatus may include a data storage unit, a first counting unit, an index storage unit and/or a programming unit. The data storage unit may be configured to store a data page. The first counting unit may be configured to generate index information by counting a number of cells included in at least one reference threshold voltage state based on the data page. The index storage unit may be configured to store the generated index information. The programming unit may be configured to store the data page in the data storage unit and store the generated index information in the index storage unit. The first counting unit may send the generated index information to the programming unit. The memory programming apparatus can monitor distribution states of threshold voltages in memory cells. | 07-23-2009 |
20090190396 | Memory device and method of reading memory data - A memory device and a method of reading multi-bit data stored in a multi-bit cell array may be provided. The memory device may include a multi-bit cell array including a least one memory page with each memory page having a plurality of multi-bit cells, and a determination unit to divide the plurality of multi-bit cells into a first group and second group. The first group may include multi-bit cells with a threshold voltage higher than a reference voltage. The second group may include multi-bit cells with a threshold voltage lower than the reference voltage. The determination unit may sequentially update the first group and second group while changing the reference voltage. | 07-30-2009 |
20090190397 | Memory device and data reading method - A memory device and a memory data reading method are provided. The memory device may include: a multi-bit cell array; a programming unit that stores N data pages in a memory page in the multi-bit cell array; and a control unit that divides the N data pages into a first group and second group, reads data of the first group from the memory page, and determines a scheme of reading data of the second group from the memory page based on the read data of the first group. | 07-30-2009 |
20090193313 | Method and apparatus for decoding concatenated code - Provided are apparatuses for decoding a concatenated code and methods for the same that may improve the decoding speed of a concatenated code based on a likelihood value with respect to output from a plurality of decoders. | 07-30-2009 |
20090196097 | Device for reading memory data and method using the same - Provided are a device for reading memory data and a method using the same. The device for reading memory data comprises a memory cell which stores multi-bit information, an information detection unit which detects as much bit information as a predetermined number of bits from among multi-bit information, a source-line voltage control unit which controls a source-line voltage of the memory cell based on the detected bit information from the information detection unit, and a remaining bit information read unit which reads remaining bit information stored in the memory cell by using the controlled source-line voltage. | 08-06-2009 |
20090201729 | Memory device and memory device heat treatment method - A memory device and a memory device heat treatment method are provided. The memory device may include: a non-volatile memory device; one or more heating devices configured to contact with the non-volatile memory device and heat the non-volatile memory device; and a controller configured to control an operation of the one or more heating devices based on operational information of the non-volatile memory device. Through this, it may be possible to improve an available period of the non-volatile memory device. | 08-13-2009 |
20090207659 | Memory device and memory data read method - Provided are memory devices and memory data read methods. A method device may include: a multi-bit cell array; a decision unit that may detect threshold voltages of multi-bit cells of the multi-bit cell array to decide first data from the detected threshold voltages, using a first decision value; an error detector that may detect an error bit of the first data; and a determination unit that may determine whether the decision unit decides second data from the detected threshold voltages using a second decision value, based on a number of detected error bits, the second decision value being different from the first decision value. Through this, it is possible to reduce time spent for reading data stored in the multi-bit cell. | 08-20-2009 |
20090207671 | Memory data detecting apparatus and method for controlling reference voltage based on error in stored data - Example embodiments may relate to a method and an apparatus for reading data stored in a memory, for example, providing a method and an apparatus for controlling a reference voltage based on an error of the stored data. Example embodiments may provide a memory data detecting apparatus including a first voltage comparator to compare a threshold voltage of a memory cell with a first reference voltage, a first data determiner to determine a value of at least one data bit stored in the memory cell according to a result of the comparison, an error verifier to verify whether an error occurs in the determined value, a reference voltage determiner to determine a second reference voltage that is lower than the first reference voltage based on a result of the verification, and a second data determiner to re-determine the value of the data based on the determined second reference voltage. | 08-20-2009 |
20090210776 | Memory device and memory data reading method - Example embodiments may provide a memory device and memory data reading method. The memory device according to example embodiments may include a multi-bit cell array, an error detector which may read a first data page from a memory page in the multi-bit cell array and may detect an error-bit of the first data page, and an estimator which may identify a multi-bit cell where the error-bit is stored and may estimate data stored in the identified multi-bit cell among data of a second data page. Therefore, the memory device and memory data reading method may have an effect of reducing an error when reading data stored in the multi-bit cell and monitoring a state of the multi-bit cell without additional overhead. | 08-20-2009 |
20090222701 | Apparatus for determining number of bits to be stored in memory cell - Example embodiments relate to an apparatus which may determine a length of data to be stored in a memory cell, and may store the data in a memory based on the determined length. A memory data storage apparatus according to example embodiments may, include: a determination unit that may determine a number of bits of data and a number of bits of data detection information to be stored in a memory cell; a data receiving unit that may receive data corresponding to the determined number of bits; an error correction coding unit that may perform an error correction coding with respect to the received data and generate data detection information corresponding to the number of bits of the data detection information; and a data storage unit that may store the received data and generated data detection information in the memory cell. | 09-03-2009 |
20090231914 | Memory devices and methods - Disclosed are a memory device and a memory data reading method. The memory device may include a multi-bit cell array, a threshold voltage detecting unit configured to detect first threshold voltage intervals including threshold voltages of multi-bit cells of the multi-bit cell array from among a plurality of threshold voltage intervals, a determination unit configured to determine data of a first bit layer based on the detected first threshold voltage intervals, and an error detection unit configured to detect an error bit of the data of the first bit layer. In this instance, the determination unit may determine data of a second bit layer using a second threshold voltage interval having a value of the first bit layer different from the detected error bit and being nearest to a threshold voltage of a multi-bit cell corresponding to the detected error bit. | 09-17-2009 |
20090235128 | Data detecting apparatus based on channel information and method thereof - An apparatus and a method for detecting data stored in a memory cell based on channel information of the memory cell are provided. The data detecting apparatus may include a voltage comparison unit that compares a plurality of soft decision reference voltages between neighboring hard decision reference voltages with a threshold voltage of a memory cell to determine a region including the threshold voltage, and a data detection unit that detects data stored in the memory cell based on channel information of the memory cell according to the region. The data detecting apparatus may further include a reference voltage determination unit that determines the plurality of soft decision reference voltages based on the channel information of the memory cell. | 09-17-2009 |
20090235129 | Apparatus and method for hybrid detection of memory data - The data detecting apparatus may provide a voltage comparison unit that compares a reference voltage, associated with a specific data bit from among a plurality of data bits stored in a memory cell, with a threshold voltage in the memory cell, a detection unit that detects a value of the specific data bit based on a result of the voltage comparison unit, and a decision unit that decides whether the specific data bit is successfully detected based on whether an error occurs in the detected data. The detection unit may re-detect a value of the specific data bit based on detection information with respect to at least one of an upper data bit and a lower data bit in relation to the specific data bit, in response to a result of the decision unit. | 09-17-2009 |
20090241008 | Memory devices and encoding and/or decoding methods - Memory devices and/or encoding/decoding methods are provided. A memory device may include: a memory cell array; an internal decoder configured to apply, to a first codeword read from the memory cell array, a first decoding scheme selected based on a characteristic of a first channel in which the first codeword is read to perform error control codes (ECC) decoding of the first codeword, and apply, to a second codeword read from the memory cell array, a second decoding scheme selected based on a characteristic of a second channel in which the second codeword is read to perform the ECC decoding of the second codeword; and an external decoder configured to apply an external decoding scheme to the ECC-decoded first codeword and the ECC-decoded second codeword to perform the ECC decoding of the first codeword and the second codeword. | 09-24-2009 |
20090241009 | Encoding and/or decoding memory devices and methods thereof - Encoding/decoding memory devices and methods thereof may be provided. A memory device according to example embodiments may include a memory cell array and a processor including at least one of a decoder and an encoder. The processor may be configured to adjust a redundant information rate of each channel, where each of the channels is a path of the memory cell array from which data is at least one of stored and read. The redundant information rate may be adjusted by generating at least one codeword based on information from a previous codeword. Therefore, example embodiments may reduce an error rate when data is read from and written to the memory device. | 09-24-2009 |
20090276687 | METHOD OF ENCODING AND DECODING MULTI-BIT LEVEL DATA - A method of encoding multi-bit level data includes: determining a range of an error pattern generated according to a transmission symbol, encoding an M-bit level of a P-bit level corresponding to the transmission symbol based on the range of the error pattern, and excluding encoding of a P-M bit level of the P-bit level. The variable P is a natural number of a value at least two, and the variable M is a natural number less than P. | 11-05-2009 |
20090282319 | HIERARCHICAL DECODING APPARATUS - A decoder includes multiple decoder stages and a controller. The decoder stages perform decoding operations with respect to a received signal using corresponding different decoding algorithms. The controller determines whether the decoding operation performed by one of the decoder stages with respect to the received signal is successful, and controls the decoding operation of each of the other decoder stages in response to a result of the determination. | 11-12-2009 |
20090285022 | Memory programming method - A memory programming method may include identifying at least one of a plurality of memory cells with a threshold voltage to be changed based on a pattern of data to be programmed in the at least one of the plurality of memory cells, applying a program condition voltage to the at least one identified memory cell until the threshold voltage of the at least one identified memory cell is included in a first threshold voltage interval, to thereby adjust the threshold voltage of the at least one identified memory cell, and programming the data in the at least one identified memory cell with the adjusted threshold voltage. | 11-19-2009 |
20090285023 | Memory device and memory programming method - Provided are memory devices and memory programming methods. A memory device may include a multi-bit cell array including a plurality of multi-bit cells, a programming unit configured to program a first data page in the plurality of multi-bit cells and to program a second data page in the multi-bit cells with the programmed first data page, a first controller configured to divide the multi-bit cells with the programmed first data page into a first group and a second group, and a second controller configured to set a target threshold voltage interval of each of the multi-bit cells included in the first group based on first read voltage levels and the second data page, and to set a target threshold voltage interval of each of the multi-bit cells included in the second group based on second read threshold voltage levels and the second data page. | 11-19-2009 |
20090287975 | Memory device and method of managing memory data error - Memory devices and/or methods of managing memory data errors are provided. A memory device detects and corrects an error bit of data read from a plurality of memory cells, and identifies a memory cell storing the detected error bit. The memory device assigns a verification voltage to each of the plurality of first memory cells, the assigned verification voltage corresponding to the corrected bit for the identified memory cell, the assigned verification voltage corresponding to the read data for the remaining memory cells. The memory device readjusts the data stored in the plurality of memory cells using the assigned verification voltage. Through this, it is possible to increase a retention period of the data of the memory device. | 11-19-2009 |
20090307566 | ITERATIVE DECODING METHOD AND APPARATUS - An iterative decoding method is disclosed and includes sequentially executing a number of iterative decoding cycles in relation to a parity check equation until the parity check equation is resolved, or a maximum number N of iterative decoding cycles is reached, during execution of the number of iterative decoding cycles, storing in a data buffer minimum estimated values for a set of variable nodes corresponding to a minimum number of bit errors, and outputting the minimum estimated values stored in the data buffer as a final decoding result when the number of iterative decoding cycles reaches N. | 12-10-2009 |
20100002506 | Memory device and memory programming method - Provided are memory devices and memory programming methods. A memory device may include: a multi-level cell array that includes a plurality of multi-level cells; a programming unit that programs a first data page in the plurality of multi-level cells and programs a second data page in a multi-level cell from among the plurality of multi-level cells in which the first data page is programmed; an error analysis unit that analyzes read error information corresponding to the first data page based on a read voltage level to determine whether to correct a read error based on the analyzed read error information; and a controller that adjusts the read voltage level of the first data page depending on the determination result. Through this, it is possible to reduce an error occurrence when reading and/or programming a data page. | 01-07-2010 |
20100008146 | Memory device and method of programming thereof - The method of programming data in a memory device includes applying a plurality of pulses to a plurality of memory cells, at least one of the plurality of pulses being a positive pulse having a positive voltage and at least one of the plurality of pulses being a negative pulse having a negative voltage, and a temporal interval existing between subsequent pulses of the plurality of pulses, and controlling at least one of a width of at least one of the temporal intervals and a magnitude of at least one of the plurality of pulses. | 01-14-2010 |
20100020620 | Memory device and method of programming thereof - Example embodiments may provide a memory device and memory data programming method. The memory device according to example embodiments may encode a first data page to generate at least one first codeword and encode a second data page to generate a second codeword. The memory device may generate the first codeword with at least one of a maximum value of a number of successive ones and a second maximum value of a number of successive zeros. The memory device may program the at least one first codeword and the at least one second codeword to a plurality of multi-bit cells. | 01-28-2010 |
20100027335 | Memory device and wear leveling method - The memory device selects any one of a first memory cell and a second memory cell based on a number of times that the first memory cell is erased, an elapsed time after the first memory cell is erased, a number of times that the second memory cell is erased, and an elapsed time after the second memory cell is erased, and program data in the selected memory cell. The memory device may improve distribution of threshold voltage of memory cells and endurance of the memory cells. | 02-04-2010 |
20100088574 | DATA STORAGE SYSTEM AND DEVICE WITH RANDOMIZER/DE-RANDOMIZER - A data storage device receives write data and includes a controller configured to determine a characteristic of the write data and provide a first control signal in response to the determined characteristic, a randomizer configured to selectively randomize or not randomize the write data in response to the first control signal to thereby generate randomized write data, and a data storage unit configured to store the randomized write data. | 04-08-2010 |
20100118608 | NON-VOLATILE MEMORY DEVICE, MEMORY CARD AND SYSTEM, AND METHOD DETERMINING READ VOLTAGE IN SAME - A non-volatile semiconductor memory device and related method of determining a read voltage are disclosed. The non-volatile semiconductor memory device includes; a memory cell array including a plurality of memory cells, a read voltage determination unit configured to determine an optimal read voltage by comparing reference data obtained during a program operation with comparative data obtained during a subsequent read operation and changing a current read voltage to a new read voltage based on a result of the comparison, and a read voltage generation unit configured to generate the new read voltage in response to a read voltage control signal provided by the read voltage determination unit. | 05-13-2010 |
20100174959 | DECODING METHOD AND MEMORY SYSTEM DEVICE USING THE SAME - A decoding method includes performing a first decoding method and performing a second decoding method when decoding of the first decoding method fails. The first decoding method includes updating multiple variable nodes and multiple check nodes using probability values of received data. The second decoding method includes selecting at least one variable node from among the multiple variable nodes; correcting probability values of data received in the selected at least one variable node; updating the variable nodes and the check nodes using the corrected probability values; and determining whether decoding of the second decoding method is successful. | 07-08-2010 |
20100174966 | DEVICE AND METHOD PROVIDING 1-BIT ERROR CORRECTION - A 1-bit error correction method is provided. In the method, a variable node at which an error has occurred is detected based on a number of unsatisfied check nodes that do not satisfy a parity condition among check nodes connected to each of variable nodes and an error in a bit corresponding to the detected variable node is corrected. | 07-08-2010 |
20100195389 | FLASH MEMORY DEVICE AND METHODS PROGRAMMING/READING FLASH MEMORY DEVICE - Multilevel flash memory and methods of programming/reading flash memory are disclosed. The multilevel flash memory device comprises a status detector configured to detect whether or not a target memory cell is programmed to an erase state, and a control logic unit controlling a program voltage applied to a neighboring memory cell adjacent to the target memory cell and to be programmed to one of a plurality of standard program states, such that the neighboring memory cell is programmed to a corresponding one of a plurality of correction program states different from the one of the plurality of standard program states. | 08-05-2010 |
20100251077 | STORAGE DEVICE AND DATA STORAGE SYSTEM INCLUDING OF THE SAME - A storage device includes a controller unit and a memory cell array. The controller unit is for outputting data through a first data path or a second data path according to a property of externally supplied input data. The memory cell array includes a first memory and a second memory, and receives and stores the data from the controller unit output through the first and second data paths. The first memory has a different memory cell structure than the second memory. | 09-30-2010 |
20100254189 | Apparatus and method of memory programming - A memory programming apparatuses and/or methods are provided. The memory programming apparatus may include a data storage unit, a first counting unit, an index storage unit and/or a programming unit. The data storage unit may be configured to store a data page. The first counting unit may be configured to generate index information by counting a number of cells included in at least one reference threshold voltage state based on the data page. The index storage unit may be configured to store, the generated index information. The programming unit may be configured to store the data page in the data storage unit and store the generated index information in the index storage unit. The first counting unit may send the generated index information to the programming unit. The memory programming apparatus can monitor distribution states of threshold voltages in memory cells. | 10-07-2010 |
20100254195 | Memory device and method for estimating characteristics of multi-bit programming - Memory devices and/or methods that may estimate characteristics of multi-bit cell are provided. A memory device may include: a multi-bit cell array; a monitoring unit to extract a threshold voltage change over time value for reference threshold voltage states selected from a plurality of threshold voltage states corresponding to data stored in the multi-bit cell array; and an estimation unit to estimate a threshold voltage change over time values for the plurality of threshold voltage states based on the extracted threshold voltage change. Through this, it is possible to monitor a change over time of threshold voltages of a memory cell. | 10-07-2010 |
20100287447 | MEMORY SYSTEM IDENTIFYING AND CORRECTING ERASURE USING REPEATED APPLICATION OF READ OPERATION - Provided is a read method for a memory system. The read method determines whether a read data error is correctable. The read method applies a plurality of read operations at a set read voltage level to identify erasure candidates, when the error is uncorrectable. The read method performs erasure decoding using an error correction code or an error detection code for the erasure candidates. | 11-11-2010 |
20100296350 | METHOD OF SETTING READ VOLTAGE MINIMIZING READ DATA ERRORS - A method setting a read voltage to minimize data read errors in a semiconductor memory device including multi-bit memory cells. In the method, a read voltage associated with a minimal number of read data error is set based on a statistic value of a voltage distribution corresponding to each one of a plurality of voltage states. | 11-25-2010 |
20100321999 | NONVOLATILE MEMORY DEVICE AND RELATED PROGRAMMING METHOD - A method of programming a nonvolatile memory device comprises programming memory cells connected to a first wordline, programming memory cells connected to a second wordline, programming memory cells connected to a third line between the first wordline and the second wordline, and adjusting a threshold voltage of the memory cells connected to the first wordline to compensate for interference generated by the programming of the memory cells connected to the third wordline. | 12-23-2010 |
20100332737 | FLASH MEMORY PREPROCESSING SYSTEM AND METHOD - A flash memory preprocessing system comprises at least one flash memory device, a memory controller controlling program and read operations of the at least one flash memory device, and a flash preprocessor receiving program data from an external source, generating preprocessed data by converting the received program data, and outputting the preprocessed data to the memory controller. The memory controller controls the at least one flash memory device to perform a program operation on the at least one flash memory device according to the preprocessed data. | 12-30-2010 |
20110007563 | NONVOLATILE MEMORY DEVICE, SYSTEM, AND RELATED METHODS OF OPERATION - A method of reading a nonvolatile memory device comprises measuring threshold voltage distributions of a plurality of memory cells, combining the measured threshold voltage distributions, and determining local minimum points in the combined threshold voltage distributions to determine read voltages for a predetermined group of memory cells. | 01-13-2011 |
20110038207 | FLASH MEMORY DEVICE, PROGRAMMING AND READING METHODS PERFORMED IN THE SAME - The flash memory device includes a control logic circuit and a bit level conversion logic circuit. The control logic circuit programs first through N | 02-17-2011 |
20110040929 | METHOD AND APPARATUS FOR MODIFYING DATA SEQUENCES STORED IN MEMORY DEVICE - A method of modifying data sequences in a memory system comprises receiving program data having a first data sequence, and determining whether the received first data sequence matches one of “m” predefined sequences stored in the memory system. The method further comprises replacing the received first data sequence with a replacement sequence upon determining that the received first data sequence matches one of the “m” predefined sequences, and outputting the replacement sequence from the memory system. The replacement sequence typically comprises pattern bits indicating a pattern of the first data sequence and location bits indicating a start location of the first data sequence. | 02-17-2011 |
20110093765 | FLASH MEMORY DEVICE AND RELATED PROGRAMMING METHOD - A nonvolatile memory device comprises a memory cell array configured to store one or more bits per memory cell, a read and write circuit configured to access the memory cell array, a control logic component configured to control the read and write circuit to sequentially execute read operations of a selected memory cell at least twice to output a read data symbol, and an error correcting unit configured to correct an error in the read data symbol based on a pattern of the read data symbol to output an error-corrected symbol. | 04-21-2011 |
20110145663 | Read level control apparatuses and methods - Various read level control apparatuses and methods are provided. In various embodiments, the read level control apparatuses may include an error control code (ECC) decoding unit for ECC decoding data read from a storage unit, and a monitoring unit for monitoring a bit error rate (BER) based on the ECC decoded data and the read data. The apparatus may additionally include an error determination unit for determining an error rate of the read data based on the monitored BER, and a level control unit for controlling a read level of the storage unit based on the error rate. | 06-16-2011 |
20110185267 | ENCODING DEVICE, CONTROLLER AND SYSTEM INCLUDING THE SAME - An encoding device includes an encoder and a puncturing unit. The encoder generates parity bits based on information bits. The puncturing unit punctures the parity bits based on a puncturing pattern complying with a first criterion determining a period of the puncturing pattern and a second criterion determining positions of remaining parity bits. | 07-28-2011 |
20110208897 | METHOD AND MEMORY SYSTEM USING A PRIORI PROBABILITY INFORMATION TO READ STORED DATA - A memory system comprises a non-volatile memory device that stores user data and state information regarding the user data. In a read operation of the non-volatile memory device, a memory controller calculates a priori probabilities for the user data based on the state information, calculates a posteriori probabilities based on the a priori probabilities, and performs a soft-decision operation to determine values of the user data based on the a posteriori probabilities. | 08-25-2011 |
20110213930 | Multi-level cell memory device and method thereof - A Multi-Level Cell (MLC) memory device and method thereof are provided. The example MLC memory device may be configured to perform data operations, and may include an MLC memory cell, a first coding device performing a first coding function, the first coding function being one of an encoding function and a decoding function, a second coding device performing a second coding function, the second coding function being one of an encoding function and a decoding function and a signal module configured to perform at least one of instructing the MLC memory cell to store data output by the second coding device if the first and second coding functions are encoding functions, and generating a demapped bit stream based on data retrieved from the MLC memory cell if the first and second coding functions are decoding functions. | 09-01-2011 |
20110216589 | FLASH MEMORY DEVICE, MEMORY SYSTEM AND METHOD OF OPERATING THE SAME - A memory system includes a memory device and a data converting device. The memory device includes a memory cell array which includes a plurality of memory cells. The data converting device includes an encoding device. The encoding device converts input data into converted data by changing a bandwidth corresponding to the input data, and provides the converted data to the memory device. Accordingly, the memory system is capable of improving the reliability of programmed data by changing the bandwidth corresponding to data to be programmed. A method of storing data in a memory system is also disclosed. | 09-08-2011 |
20110219288 | METHOD OF OPERATING NONVOLATILE MEMORY DEVICE, METHOD OF OPERATING CONTROLLER, AND METHOD OF OPERATING MEMORY SYSTEM INCLUDING THE SAME - An method of operating a memory system including a nonvolatile memory device and a controller. The method includes receiving a source word, converting the received source word to a codeword, and programming the converted codeword in the nonvolatile memory device. A length of the converted codeword can be greater than a length of the received source word, and a difference between the numbers of first and second digital bits of the converted codeword can be less than a reference value. | 09-08-2011 |
20110246853 | SEMICONDUCTOR DEVICE AND DECODING METHOD THEREOF - An error control coding (ECC) circuit includes a first decoder, a second decoder, and a controller. The first decoder receives encoded data comprising a first parity and a second parity. The first decoder decodes the encoded data to a first code by using the first parity. The second decoder is connected to the first decoder. The second decoder is configured to decode the encoded data when the first decoder is deactivated and decode the first code using the second parity when the first decoder is deactivated. The controller transmits a control signal to the first decoder and the second decoder to control the first decoder and the second decoder. | 10-06-2011 |
20110249495 | NON-VOLATILE MEMORY DEVICE, OPERATION METHOD THEREOF, AND DEVICES HAVING THE NON-VOLATILE MEMORY DEVICE - A non-volatile memory device is provided. The non-volatile memory device includes a memory cell array including a plurality of multi-level cells each storing data corresponding to one of a plurality of states of a first group of states, and a control circuit. The control circuit configured to program data corresponding to one of the plurality of states in a first multi-level cell according to a first verify voltage level of a first group of verify voltage levels, and to control the first multi-level cell to be re-programmed to one of a plurality of states of a second group of states according to a first verify voltage level of a second group of verify voltage levels. Each voltage level of the second group of verify voltage levels has a higher level than the verify voltage levels of the first group of verify voltage levels. One of the plurality of states of the second group of states includes at least one of the plurality of states of the first group of states. | 10-13-2011 |
20110249496 | PROGRAM METHOD OF MULTI-BIT MEMORY DEVICE AND DATA STORAGE SYSTEM USING THE SAME - Provided is a program method of a multi-bit memory device with memory cells arranged in rows and columns. The program method includes a programming each memory cell of the first group of memory cells to a state within a first group of states according to a verify voltage level of a first group of verify voltage levels within a first range of levels, and programming each memory cell of the second group of memory cells to a state within a second group of states according to a verify voltage level of a second group of verify voltage levels within a second range of levels. The lowest verify voltage level in the second range of levels is higher than the highest verify voltage level in the first range of levels. A first voltage difference between adjacent verify voltage levels within the first range of levels is different from a second voltage difference between the highest verify voltage level of the second group of verify voltage levels and the lowest verify voltage level of the third group of verify voltage levels. | 10-13-2011 |
20110276777 | DATA STORAGE DEVICE AND RELATED METHOD OF OPERATION - A method of storing data in a storage medium of a data storage device comprises storing input data in the storage medium, and reading the input data from the storage medium and compressing the read data during a background operation of the data storage device. | 11-10-2011 |
20110320689 | Data Storage Devices and Data Management Methods for Processing Mapping Tables - Methods of operating integrated circuit devices include updating a mapping table with physical address information by reading forward link information from a plurality of spare sectors in a corresponding plurality of pages within a nonvolatile memory device and then writing mapping table information derived from the forward link information into the mapping table. This forward link information may be configured as absolute address information (e.g., next physical address) and/or relative address information (e.g., change in physical address). This updating of the mapping table may include updating a mapping table within a volatile memory, in response to a resumption of power within the integrated circuit device. This resumption of power may follow a power failure during which the contents of the volatile memory are lost. | 12-29-2011 |
20120011416 | ECC CONTROLLER FOR USE IN FLASH MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME - An ECC (error correction code) controller of a flash memory device which stores an M-bit data (M being a positive integer equal to or greater than 2) comprises a first ECC block which generates a first ECC data from a program data to be stored in the flash memory device according to a first error correcting method and a second ECC block which generates a second ECC data from the first ECC data and the program data output from the first ECC block according to a second error correcting method, the program data, the first ECC data, and the second ECC data being stored in the flash memory device. | 01-12-2012 |
20120020156 | METHOD FOR PROGRAMMING NON-VOLATILE MEMORY DEVICE AND APPARATUSES PERFORMING THE METHOD - A method of programming multi-level cells included in a spare region, the method including programming first page data and at least one first dummy data in a first multi-level cell; and programming second page data and at least one second dummy data in a second multi-level cell. | 01-26-2012 |
20120069654 | MEMORY DEVICE AND METHOD FOR ESTIMATING CHARACTERISTICS OF MULTI-BIT PROGRAMMING - Memory devices and/or methods that may estimate characteristics of multi-bit cell are provided. A memory device may include: a multi-bit cell array; a monitoring unit to extract a threshold voltage change over time value for reference threshold voltage states selected from a plurality of threshold voltage states corresponding to data stored in the multi-bit cell array; and an estimation unit to estimate a threshold voltage change over time values for the plurality of threshold voltage states based on the extracted threshold voltage change. Through this, it is possible to monitor a change over time of threshold voltages of a memory cell. | 03-22-2012 |
20120084490 | METHOD FOR CHANGING READ PARAMETER FOR IMPROVING READ PERFORMANCE AND APPARATUSES USING THE SAME - A memory system including a non-volatile memory device and a memory controller is provided. When a read operation on a first data initially output from the non-volatile memory device during a first read operation is successful, the memory controller may change a read voltage for reading a second data stored in the non-volatile memory device during a second read operation. | 04-05-2012 |
20120131266 | MEMORY CONTROLLER, DATA STORAGE SYSTEM INCLUDING THE SAME, METHOD OF PROCESSING DATA - A data storage system includes a controller configured to receive data and data information about the data from a host, analyze the data information, detect whether the data has been compressed, and compress the data according to a detection result; and a nonvolatile memory device configured to store the data compressed by the controller and information about whether the data has been compressed. The controller includes a buffer configured to temporarily store the data and the data information received from the host, an analyzer configured to output, based on an analysis result, a compression control flag that indicates whether the data has been compressed, and a compressor configured to selectively compress or bypass the data based on the compression control flag, and to transmit the data to the nonvolatile memory device. | 05-24-2012 |
20120166708 | FLASH MEMORY DEVICES, DATA RANDOMIZING METHODS OF THE SAME, MEMORY SYSTEMS INCLUDING THE SAME - Disclosed is a flash memory device which includes a memory cell array configured to store data, a randomizer configured to generate a random sequence, to interleave the random sequence using at least one of memory parameters associated with data to be programmed in the memory cell array, and a control logic circuit configured to provide the memory parameters to the randomizer and to control the randomizer. | 06-28-2012 |
20120182163 | DATA COMPRESSION DEVICES, OPERATING METHODS THEREOF, AND DATA PROCESSING APPARATUSES INCLUDING THE SAME - A method of operating a data compression device includes analyzing data using an analyzer and generating a result of the analysis, while the data is buffered by an input buffer, and selectively compressing the buffered data according to the result of the analysis. A data compression device includes a data pattern analyzer configured to analyze data transmitted to an input buffer, and generate an analysis code based on the analysis of the data; and a data compression manager configured to selectively compress the data in the input buffer based on the analysis code. | 07-19-2012 |
20120215963 | Semiconductor Memory Systems that Include Data Randomizers and Related Devices, Controllers and Methods - A semiconductor memory system and a programming method performed by the same. The semiconductor memory system includes: a semiconductor memory device having a storage area; a memory controller for controlling programming and reading of the storage area of the semiconductor memory device; at least one first randomizer for changing program data to be programmed into the storage area to first random data by using a first sequence in a first period; and at least one second randomizer for changing the first random data to second random data by using a second sequence in a second period that is different from the first period. | 08-23-2012 |
20120216096 | Memory Device and Memory System - A memory device and a memory system, the memory system including a data compressor for generating compressed data by compressing program data in a first unit, and an error correction block generator for dividing the compressed data in a second unit to obtain a plurality of pieces of normal data, and generating error correction blocks for correcting errors of the plurality of pieces of normal data, wherein each of the error correction blocks comprises the normal data, invalid data having a size corresponding to the size of the normal data, and parities for the normal data and the invalid data. | 08-23-2012 |
20120221772 | SEMICONDUCTOR MEMORY DEVICES, SYSTEMS INCLUDING NON-VOLATILE MEMORY READ THRESHOLD VOLTAGE DETERMINATION - A semiconductor memory system can include a memory device having a memory cell array that includes a plurality of memory cells. A memory controller can be configured to perform domain transformation on data written to and/or read from the plurality of memory cells to provide domain-transformed data and configured to perform signal processing on the domain-transformed data to output processed data or a control signal. | 08-30-2012 |
20120242517 | METHODS OF COMPRESSING DATA IN STORAGE DEVICE - At least one example embodiment discloses a method of compressing data in a storage device. The method includes determining a codeword length of a symbol using a first table indicating a relationship between a number of occurrences of the symbol in received data and the codeword length, determining a codeword having the codeword length for the symbol, and generating compressed data of the received data, the generating including converting the symbol into the codeword. | 09-27-2012 |
20120290783 | MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME - A memory device including a randomizer and a memory system including the memory device are provided. The memory device includes: a randomizer including a sequence generator which generates a first sequence from a seed and a converter which converts the first sequence into a second sequence in response to a conversion factor, the randomizer randomizing data to be programmed using the second sequence and outputting the randomized data; and a storage area which receives the randomized data from the randomizer and storing the randomized data. | 11-15-2012 |
20130007081 | DEVICE AND METHOD FOR PROCESSING DATA - A data processing which includes a conversion circuit and a pseudo random number generator including a series connection of plural shift registers. The conversion circuit receives a pseudo random number sequence from an output of one of the plural shift registers excluding a last shift register of the series connection, and converts first data to second data using the received pseudo random number sequence. | 01-03-2013 |
20130018934 | METHODS FOR OPERATING CONTROLLERSAANM Kim; Yong JuneAACI SeoulAACO KRAAGP Kim; Yong June Seoul KRAANM Chung; Jung SooAACI SeoulAACO KRAAGP Chung; Jung Soo Seoul KRAANM Kong; Jun JinAACI Yongin-siAACO KRAAGP Kong; Jun Jin Yongin-si KRAANM Son; HongrakAACI Anyang-siAACO KRAAGP Son; Hongrak Anyang-si KR - A method for operating a controller may include storing a pseudo noise (PN) sequence provided from a PN sequence generator in an i-th area of a seed table and cyclically shifting the PN sequence from the i-th area to an (i+1)-th area in the table to form the table. The table may include row and column areas. A method for operating a controller may include receiving a sequence from a sequence generator, splitting the sequence into seed units, storing split sequences in a j-th area of the seed table, and forming the table including the seed units corresponding to the split sequences stored in the j-th area. A method for operating a controller may include storing a sequence provided from a sequence generator in a seed table that includes a plurality of areas and cyclically shifting the sequence in the table until a seed is formed in each area. | 01-17-2013 |
20130060985 | DEVICE CAPABLE OF ADOPTING AN EXTERNAL MEMORY - A device includes a memory controller, a memory bus coupled to the memory controller, an internal memory and an external memory connection unit. The internal memory may be directly connected to the memory controller through the memory bus. The external memory connection unit may connect an external memory directly to the memory controller through a portion of signal lines in the memory bus, and may generate a flag signal indicating whether the external memory is connected to the external memory connection unit. | 03-07-2013 |
20130060992 | DATA COMPRESSION METHOD - A data compression method includes; generating compressed data from raw data having a normal size, defining a super page for a memory having a super size greater than the normal size, selecting a compressed data set from among the compressed data having a compression ratio less than a reference compression ratio ranging between 0.5 and 1.0, and storing the compressed data set in the memory using the super page. | 03-07-2013 |
20130094293 | MEMORY DEVICE AND METHOD OF READING DATA FROM MEMORY DEVICE - A method is provided for reading data from memory cells, including at least one victim cell and at least one aggressor cell, using an element graph. The method includes defining function nodes corresponding to probability density functions with respect to a first physical characteristic of the at least one victim cell and a second physical characteristic of the at least one aggressor cell, defining variable nodes corresponding to at least one first data value stored in the at least one victim cell and at least one second data value stored in the at least one aggressor cell, and defining edges connecting the function nodes and the variable nodes. | 04-18-2013 |
20130097364 | NONVOLATILE MEMORY DEVICE AND RELATED METHOD OF OPERATION - A method of operating a nonvolatile memory device comprises defining a bit ordering for a plurality of n-bit (n>2) multi-level cells such that bit-reading numbers associated with different pages of the n-bit multi-level cells are substantially equalized, wherein the bit ordering assigns at least one bit “0” to an erased state of the n-bit multi-level cells, and programming n-bit data into each of the n-bit multi-level cells according to the bit ordering. | 04-18-2013 |
20130103913 | SEMICONDUCTOR STORAGE DEVICE, SYSTEM, AND METHOD - A semiconductor storage system includes: a difference determining circuit configured to determine a difference between the number of first state values of sample data written to a memory and the number of first state values of read data read from the memory; and a compensation value determining circuit configured to determine a read voltage level compensation value corresponding to a difference between the number of the first state values of the sample data written to the memory and the number of the first state values of the read data read from the memory. | 04-25-2013 |
20130132644 | METHOD OF PROGRAMMING A NONVOLATILE MEMORY DEVICE - A method of programming a nonvolatile memory device including a page buffer is provided. The method includes loading first page data and second page data into the page buffer; performing, by the page buffer, a first selective dump operation on the first page data and the second page data to generate first interleaved page data; performing, by the page buffer, a second selective dump operation on the first page data and the second page data to generate second interleaved page data; and programming the first interleaved page data and the second interleaved page data into a multi-level cell block. | 05-23-2013 |
20130198589 | METHOD OF OPERATING MEMORY CONTROLLER AND MEMORY SYSTEM INCLUDING THE MEMORY CONTROLLER - According to example embodiments, a method of controlling a memory controller includes executing an error correction code (ECC) on first page data that has been read from a non-volatile memory device using a first read voltage level, estimating a second read voltage level for reading the first page data using metadata of second page data when an uncorrectable error is detected in the first page data according to a result of executing the ECC. | 08-01-2013 |
20130227213 | MEMORY CONTROLLER AND OPERATION METHOD THEREOF - A memory controller and an operation method thereof are provided. The operation method includes storing a plurality of random sequences, selecting at least one random sequence among the plurality of random sequences according to a data pattern of a data block, and performing conversion by at least one of randomizing the data block using the selected at least one random sequence and derandomizing the randomized data block using the selected at least one random sequence. | 08-29-2013 |
20130268724 | SSD WITH RAID CONTROLLER AND PROGRAMMING METHOD - A solid state drive (SSD) includes non-volatile memory devices and a RAID controller. Each of the non-volatile memory devices includes a memory cell array having a plurality of physical pages. The RAID controller performs a parity operation on 1st through (N−1)th physical page data to generate Nth physical page data, determines a physical page group including 1st through Nth physical pages that are selected from the 1st through Nth non-volatile memory devices, respectively, such that at least two of the 1st through Nth physical pages have different bit error rates from each other, and stores the 1st through Nth physical page data in the 1st through Nth physical pages, respectively. | 10-10-2013 |
20130294158 | MULTI-LEVEL CELL MEMORY DEVICES AND METHODS OF STORING DATA IN AND READING DATA FROM THE MEMORY DEVICES - A multi-level cell (MLC) memory device may include ‘a’ number of m-bit MLC memory cells; an encoder that encodes ‘k’ bits of data at a code rate of k/n to generate an encoded bit stream; and a signal mapping module that applies pulses to the MLC memory cells in order to write the encoded bit stream in the MLC memory cells. In the device, ‘a’ and ‘m’ may be integers greater than or equal to 2, ‘k’ and ‘n’ may be integers greater than or equal to 1, and ‘n’ may be greater than ‘k’. A method of storing data in the device may include encoding ‘k’ bits of data at a code rate of k/n to generate an encoded bit stream. A method of reading data from the device may include decoding ‘n’ bits of data at a code rate of n/k to generate a decoded bit stream. | 11-07-2013 |
20130322175 | METHOD OF REPROGRAMMING NONVOLATILE MEMORY COMPRISING MARKING SOME CELLS AS BLANKS - A method of operating a memory device comprises programming a first data signal to a first memory cell, attempting to program a second data signal to the first memory cell in a state where the first memory cell is not erased, and marking the first memory cell as blank upon failing to program the second data signal to the first memory cell. | 12-05-2013 |
20140032935 | MEMORY SYSTEM AND ENCRYPTION METHOD IN MEMORY SYSTEM - An encryption method used in the memory system includes; generating a private key using physical unique identification (PUID) information of a nonvolatile memory device, encrypting data using the private key, and then programming the encrypted data in the nonvolatile memory device. | 01-30-2014 |
20140068160 | MEMORY CONTROLLER, METHOD OF OPERATING MEMORY CONTROLLER, AND SYSTEM COMPRISING MEMORY CONTROLLER - A memory controller controls operation of a nonvolatile memory device comprising a memory area comprising a plurality of multi-level cells (MLCs). The memory controller receives an address of the memory area and data to be programmed to the memory area, analyzes access history information regarding the memory area based on the address, generates first mapping data corresponding to the data or second mapping data based on the data and previous mapping data that has been programmed to the MLCs according to a result of the analysis, and transmits a program command comprising one of the first mapping data and the second mapping data to the nonvolatile memory device. | 03-06-2014 |
20140101513 | METHOD OF OPERATING CYCLIC REDUNDANCY CHECK IN MEMORY SYSTEM AND MEMORY CONTROLLER USING THE SAME - A method of performing a cyclic redundancy check (CRC) operation in a memory system, and a memory controller that uses the same. The method includes initializing a linear feed-back shift register (LFSR) circuit in a CRC polynomial, generating CRC parity information with respect to input data to be stored in a memory device by using the LFSR circuit, and generating a CRC code with respect to the input data based on the CRC parity information, such that the initialization of the LFSR circuit is set such that a register initial value of the LFSR circuit is determined to satisfy a condition that, when data input to the LFSR circuit is first state information, the CRC parity information generated from the LFSR circuit is second state information. | 04-10-2014 |
20140108362 | DATA COMPRESSION APPARATUS, DATA COMPRESSION METHOD, AND MEMORY SYSTEM INCLUDING THE DATA COMPRESSION APPARATUS - Provided are data compression method, data compression apparatus, and memory system. The data compression method includes receiving input data and generating a hash key for the input data, searching a hash table with the generated hash key, and if it is determined that the input data is a hash hit, compressing the input data using the hash table; and searching a cache memory with the input data, and if it is determined that the input data is a cache hit, compressing the input data using the cache memory. | 04-17-2014 |
20140108747 | METHOD OF DETERMINING DETERIORATION STATE OF MEMORY DEVICE AND MEMORY SYSTEM USING THE SAME - A method is provided for determining a deterioration condition of a memory device. The method includes calculating first information corresponding to a number of bits having a first logic value from data obtained by performing a first read operation on target storage region of the memory device using a first reference voltage as a read voltage, and calculating second information corresponding to a number of bits having a second logic value from data obtained by performing a second read operation on the target storage region using a second reference voltage as the read voltage. A deterioration condition of the target storage region is determined based on the first and second information. The first reference voltage is less than a first read voltage by which an erase state of the memory device is distinguished from an adjacent program state, and the second reference voltage is higher than the first read voltage. | 04-17-2014 |
20140115424 | MEMORY SYSTEM AND METHOD OF OPERATING MEMORY SYSTEM USING RECONSTRUCTED DATA - Provided is a method of operating a memory system. The method includes programming first bit data into multiple memory cells; identifying target memory cells that are in a first state and have threshold voltages equal to or greater than a first voltage from the memory cells programmed with the first bit data; receiving second bit data which is to be programmed into the memory cells; calculating multiple third bit data by performing a first process on the second bit data; and selecting third bit data of the calculated multiple third bit data that changes a largest number of target memory cells from the first state to a second state when the memory cells are programmed with each of the multiple third bit data, respectively. The selected third bit data is programmed into the memory cells. | 04-24-2014 |
20140152475 | DATA COMPRESSION DEVICES, OPERATING METHODS THEREOF, AND DATA PROCESSING APPARATUSES INCLUDING THE SAME - A method of operating a data compression device includes analyzing data using an analyzer and generating a result of the analysis, while the data is buffered by an input buffer, and selectively compressing the buffered data according to the result of the analysis. A data compression device includes a data pattern analyzer configured to analyze data transmitted to an input buffer, and generate an analysis code based on the analysis of the data; and a data compression manager configured to selectively compress the data in the input buffer based on the analysis code. | 06-05-2014 |
20140164875 | MEMORY CONTROLLER AND METHOD OF OPERATING THE SAME - A memory controller includes a register configured to store a parity check matrix, and an error correcting code (ECC) decoder configured to perform error bit correction on data supplied from a non-volatile memory device using the parity check matrix. The parity check matrix includes N column matrices, where N is a natural number. Each of the N column matrices includes multiple sub-matrices, and a last sub-matrix of the multiple sub-matrices of each column matrix, which is a non-zero valued matrix that comes last in an decoding sequence of the ECC decoder, is an identity matrix. | 06-12-2014 |
20140189279 | METHOD OF COMPRESSING DATA AND DEVICE FOR PERFORMING THE SAME - A data compression method includes receiving an input data stream including a previous data block and a current data block, and executing a first comparison of a part of the previous data block with part of a previous reference data block, and a second comparison of the current data block with a current reference data block, where the first and second comparisons are executed in parallel. The method further includes selectively, based on results of the first and second comparisons, outputting the current data block or compressing an extended data block, where the extended data block includes the part of the previous data block and the current data block. | 07-03-2014 |
20140195702 | METHOD OF OPERATING DATA COMPRESSION CIRCUIT AND DEVICES TO PERFORM THE SAME - A method of operating a data compression circuit includes receiving and storing a plurality of data blocks until a cache is full and writing the data blocks that have been stored in the cache to a buffer memory when the cache is full. The method also includes performing forced literal/literal encoding on each of the data blocks regardless of repetitiveness of each data block when the cache is full. | 07-10-2014 |
20140269057 | NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD - A method of programming a non-volatile memory device includes; defining a set of verification voltages, setting a maximum verification voltage among verification voltages that are less than or equal to a first target programming voltage to be a target verification voltage, calculating a number of extra pulses based on the target verification voltage and the first target programming voltage, verifying whether a threshold voltage of the memory cell is equal to or greater than the target verification voltage by applying an incremental step pulse program (ISPP) pulse to the memory cell and then applying at least one verification voltage in the set of verification voltages to the memory cell, and further applying the ISPP pulse to the memory cell a number of times equal to the number of extra pulses when the threshold voltage is verified to be equal to or greater than the target verification voltage. | 09-18-2014 |
20140281293 | METHOD OF OPERATING MEMORY CONTROLLER AND DEVICES INCLUDING MEMORY CONTROLLER - A method of operating a memory controller includes receiving a first data sequence and generating a coset representative sequence that can be divided into m-bit strings, where “m” is a natural number of at least 2; performing a first XOR operation on each of the m-bit strings in the coset representative sequence and binary bits; calculating all possible branch metrics according to a result of the first XOR operation; determining a survivor path sequence based on the all possible branch metrics; and performing a second XOR operation on the coset representative sequence and the survivor path sequence and generating an output sequence. | 09-18-2014 |
20140281816 | MEMORY CONTROLLER AND METHOD OF OPERATING THE SAME - A method of operating a memory controller is provided. The method includes determining a data state based on an input stream including multiple alphabet letters, converting a part of the input stream, which corresponds to a conversion size, into alphabet letters in a lower numeral system when the data state is determined to be a first state among multiple predetermined data states, inserting one of the converted alphabet letters into the input stream, and outputting each of the alphabet letters in the input stream as is when the data state is determined to be a second state among the predetermined data states. | 09-18-2014 |
20140281827 | MEMORY CONTROLLER, METHOD OF OPERATING THE SAME, AND SYSTEM INCLUDING THE SAME - A method of processing data using a memory controller includes determining at least one cell state to which each of a plurality of multi-level cells can be changed to based on a current cell state of each multi-level cell, where each multi-level cell includes a plurality of data pages; determining one of the data pages as having a stuck bit when a value of the data page has a single mapping value based on mapping values mapped to the at least one cell state and generating stuck bit data regarding the stuck bit; and encoding write data to be stored in the multi-level cells based on the stuck bit data. | 09-18-2014 |
20150043282 | METHOD OF ESTIMATING DETERIORATION STATE OF MEMORY DEVICE AND RELATED METHOD OF WEAR LEVELING - A method of estimating a deterioration state of a memory device comprises reading data from selected memory cells connected to a selected wordline of a memory cell array by applying to the selected wordline a plurality of distinct read voltages having values corresponding to at least one valley of threshold voltage distributions of the selected memory cells, generating quality estimation information indicating states of the threshold voltage distributions using the data read from the selected memory cells, and determining a deterioration state of a storage area including the selected memory cells based on the generated quality estimation information. | 02-12-2015 |
20150058692 | LOW-DENSITY PARITY-CHECK DECODING METHOD AND LOW-DENSITY PARITY-CHECK DECODER USING THE SAME - A low-density parity-check (LDPC) decoding method includes exchanging messages between check nodes and variable nodes based on scheduling information representing an order of exchanging messages between the check nodes and the variable nodes for an LDPC decoding, and performing the LDPC decoding based on the exchanged messages, wherein the scheduling information is determined by manipulating at least one of an order of the check nodes and an order of the variable nodes in an LDPC bipartite graph. | 02-26-2015 |