Patent application number | Description | Published |
20130260497 | METHOD FOR MANUFACTURING A THIN FILM TRANSISTOR ARRAY PANEL - A method for manufacturing a thin film transistor array panel according to an exemplary embodiment of the present invention includes, forming a gate electrode, a gate insulating layer, and an oxide semiconductor layer on a substrate, first heat treating the substrate comprising the oxide semiconductor layer, forming a source electrode and a drain electrode on the oxide semiconductor layer, the source and drain electrodes facing each other, and forming a passivation layer on the source electrode and the drain electrode. The first heat treating is performed at more than 1 atmosphere and at most 50 or less atmospheres. | 10-03-2013 |
20130306965 | THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME - A thin film transistor includes: a gate electrode on a substrate; a source electrode; a drain electrode positioned in a same layer as the source electrode and facing the source electrode; an oxide semiconductor layer positioned between the gate electrode and the source electrode or drain electrode; and a gate insulating layer positioned between the gate electrode and the source electrode or drain electrode. The oxide semiconductor layer includes titanium oxide (TiOx) doped with niobium (Nb). | 11-21-2013 |
20140103332 | THIN FILM TRANSISTOR DISPLAY PANEL - A thin film transistor display panel a includes a transparent substrate; a gate electrode positioned on the substrate; a gate insulating layer positioned on the gate electrode; a semiconductor layer positioned on the gate insulating layer and including a channel region; a source electrode and a drain electrode positioned on the semiconductor layer and facing each other; and a passivation layer configured to cover the source electrode, the drain electrode, and the semiconductor layer, wherein the semiconductor layer includes a relatively thick first portion between the source electrode and the gate electrode and a relatively thinner second portion between the drain electrode and the gate electrode overlap, the relatively thick first portion being sufficiently thick to substantially reduce a charge trapping phenomenon that may otherwise occur at a gate electrode to gate dielectric interface if the first portion were as thin as the second portion. | 04-17-2014 |
20140291665 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel includes: a gate electrode disposed on a substrate, an insulating layer disposed on the gate electrode, an oxide semiconductor disposed on the gate insulating layer, source electrode overlapping a portion of the oxide semiconductor, a drain electrode overlapping another portion of the oxide semiconductor; and a buffer layer disposed between the oxide semiconductor and the source electrode and between the oxide semiconductor and the drain electrode. The buffer layer comprises tin as a doping material. A weight percent of the doping material is greater than approximately 0% and less than or equal to approximately 20%. | 10-02-2014 |
20140328083 | LIGHT EMITTING DEVICE PACKAGE AND BACKLIGHT UNIT COMPRISING THE SAME - Disclosed is a light emitting element package having excellent heat radiation performance and high luminance, and a backlight unit including the same. The light emitting element package includes a package including a lead frame, a light emitting element provided on the lead frame, and a molded material combined with the lead frame and having an opening for emitting light generated by the light emitting element, and a reflection structure having an opening corresponding to the opening of the molded material, and contacting the molded material. | 11-06-2014 |
20140346498 | THIN FILM TRANSISTOR, DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING A THIN FILM TRANSISTOR - A thin film transistor includes a gate electrode, a channel overlapped with the gate electrode, a source electrode contacting the channel, and a drain electrode spaced apart from the source electrode and contacting the channel. The channel includes indium-zinc-tin oxide sourced from a source including a single phase indium-zinc-tin oxide. | 11-27-2014 |
20150144941 | DISPLAY SUBSTRATE COMPRISING PIXEL TFT AND DRIVING TFT AND PREPARATION METHOD THEREOF - Disclosed is a display substrate including a driving unit on a substrate comprising a first thin film transistor and a display unit on the substrate being adjacent to the driving unit and comprising a second thin film transistor. | 05-28-2015 |
20160133754 | THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND LIQUID CRYSTAL DISPLAY PANEL HAVING THE SAME - A thin film transistor substrate includes a substrate, a bottom gate on the substrate, a first insulating layer on the substrate and on the bottom gate, a drain on the first insulating layer, a source on the first insulating layer, the source including a first source at a first side of the drain and a second source at a second side of the drain, an active layer on the first insulating layer, the active layer including a first active layer contacting the drain and the first source and a second active layer contacting the drain and the second source, a second insulating layer on the drain, the source, and the active layer, and a top gate on the second insulating layer. | 05-12-2016 |