| Patent application number | Description | Published |
|---|
| 20080199806 | PATTERNING PROCESS AND RESIST COMPOSITION - A pattern is formed by applying a positive resist composition comprising a polymer comprising 7-oxanorbornane ring-bearing recurring units and acid labile group-bearing recurring units and an acid generator onto a substrate to form a resist film, heat treating and exposing the resist film to radiation, heat treating and developing the resist film with a developer, and causing the resist film to crosslink and cure with the aid of acid and/or heat. A second resist pattern is then formed in the space area of the first resist pattern. The double patterning process reduces the pitch between patterns to one half. | 08-21-2008 |
| 20080241736 | RESIST COMPOSITION AND PATTERNING PROCESS - To a resist composition comprising a polymer which changes its alkali solubility under the action of an acid as a base resin, is added a copolymer comprising recurring units containing a carboxylic acid ammonium salt and recurring units containing at least one fluorine atom as an additive. The composition is suited for immersion lithography. | 10-02-2008 |
| 20090011365 | RESIST COMPOSITION AND PATTERNING PROCESS - To a resist composition comprising a polymer which changes its alkali solubility under the action of an acid as a base resin, is added a copolymer comprising recurring units containing amino and recurring units containing α-trifluoromethylhydroxy as an additive. The composition is suited for immersion lithography. | 01-08-2009 |
| 20090053651 | PATTERNING PROCESS - A pattern is formed by applying a first positive resist composition onto a substrate, heat treatment, exposure, heat treatment and development to form a first resist pattern; causing the first resist pattern to crosslink and cure by irradiation of high-energy radiation of up to 180 nm wavelength or EB; further applying a second positive resist composition onto the substrate, heat treatment, exposure, heat treatment and development to form a second resist pattern. The double patterning process reduces the pitch between patterns to one half. | 02-26-2009 |
| 20090053657 | PATTERNING PROCESS AND PATTERN SURFACE COATING COMPOSITION - A pattern is formed by applying a first positive resist composition comprising a polymer comprising recurring units which become alkali soluble under the action of acid onto a substrate to form a first resist coating, heat treating, exposing, heat treating, developing to form a first resist pattern, applying a pattern surface coating composition comprising a hydroxyl-containing crosslinkable polymer onto the first resist pattern and crosslinking, thereby covering the first resist pattern with a crosslinked polymer film, applying a second positive resist composition thereon, heat treating, exposing, heat treating, and developing to form a second resist pattern. | 02-26-2009 |
| 20090081588 | RESIST COMPOSITION AND PATTERNING PROCESS - A resist composition comprises a base polymer which changes its alkali solubility under the action of an acid, and an additive copolymer comprising recurring units (a) and (b). R | 03-26-2009 |
| 20090081595 | PATTERNING PROCESS - A pattern is formed through positive/negative reversal by coating a chemically amplified positive resist composition comprising an acid labile group-bearing resin, a photoacid generator, and an organic solvent onto a substrate, prebaking the resist composition, exposing the resist film to high-energy radiation, post-exposure heating, and developing the exposed resist film with an alkaline developer to form a positive pattern; irradiating or heating the positive pattern to facilitate elimination of acid labile groups and crosslinking for improving alkali solubility and imparting solvent resistance; coating a reversal film-forming composition thereon to form a reversal film; and applying an alkaline wet etchant thereto for dissolving away the positive pattern. | 03-26-2009 |
| 20090087786 | PATTERNING PROCESS AND RESIST COMPOSITION USED THEREIN - A pattern is formed by applying a first positive resist composition onto a substrate, heat treatment, exposure, heat treatment and development to form a first resist pattern, the first positive resist composition comprising a polymer having copolymerized recurring units having naphthol and recurring units with an alkaline solubility that increases under the action of acid; causing the first resist coating to crosslink and cure by irradiation of high-energy radiation of sub-200 nm wavelength; further applying a second positive resist composition onto the substrate, heat treatment, exposure, heat treatment and development to form a second resist pattern. The double patterning process reduces the pitch between patterns to one half. | 04-02-2009 |
| 20090087799 | ANTIREFLECTIVE COATING COMPOSITION, ANTIREFLECTIVE COATING, AND PATTERNING PROCESS - A composition comprising (A) a polymer having an alcohol structure with plural fluorine atoms substituted at α- and α′-positions and having k=0.01-0.4 and (B) an aromatic ring-containing polymer having k=0.3-1.2 is used to form an antireflective coating. The ARC-forming composition can be deposited by the same process as prior art ARCs. The resulting ARC is effective in preventing reflection of exposure light in photolithography and has an acceptable dry etching rate. | 04-02-2009 |
| 20090202943 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A positive resist composition comprises a polymer comprising recurring units having a sulfonium salt incorporated therein as a base resin which becomes soluble in alkaline developer under the action of acid. The polymer generates a strong sulfonic acid upon exposure to high-energy radiation so as to facilitate effective scission of acid labile groups in the resist composition. | 08-13-2009 |
| 20090208867 | Resist Composition, Resist Protective Coating Composition, and Patterning Process - A polymer obtained through copolymerization of a monomer having a hexafluoroalcohol pendant and a monomer having a hexafluoroalcohol pendant whose hydroxyl moiety has been protected is useful as an additive to a photoresist composition and as a protective coating material for immersion lithography. When processed by immersion lithography, the resist composition and protective coating composition exhibit good water repellency and water slip and produce few development defects. | 08-20-2009 |
| 20090208873 | POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS - A polymer obtained through copolymerization of a monomer having a hexafluoroalcohol pendant whose hydroxyl moiety has been protected and a monomer having an acid labile group is useful as an additive to a photoresist composition for immersion lithography. When processed by immersion lithography, the resist composition exhibits good water repellency and water slip and produces few development defects. | 08-20-2009 |
| 20090208886 | DOUBLE PATTERNING PROCESS - Double patterns are formed by coating a first chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a first positive resist pattern, treating the first resist pattern to be alkali soluble and solvent resistant, coating a second resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a second positive resist pattern. The last development step includes dissolving away the reversed first resist pattern and achieving reversal transfer. | 08-20-2009 |
| 20090233223 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS - A polymer comprising recurring units of a sulfonium salt represented by formula (1) is provided as well as a chemically amplified resist composition comprising the same. R | 09-17-2009 |
| 20090253084 | DOUBLE PATTERNING PROCESS - Double patterns are formed by coating a chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a positive resist pattern, treating the positive resist pattern to be alkali soluble and solvent resistant, coating a negative resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a negative resist pattern. The last development step includes the reversal transfer step of dissolving away the positive resist pattern which has been converted to be soluble in developer. | 10-08-2009 |
| 20090269696 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS - A polymer comprising recurring units having formulae (1), (2) and (3) is provided as well as a chemically amplified resist composition comprising the same. R | 10-29-2009 |
| 20090280434 | RESIST COMPOSITION AND PATTERNING PROCESS - A copolymer of an alkali-soluble (α-trifluoromethyl)-acrylate and a norbornene derivative is useful as an additive to a resist composition. When processed by immersion lithography, the resist composition exhibits excellent water repellency and water slip and forms a pattern with few development defects. | 11-12-2009 |
| 20090286182 | RESIST PROTECTIVE COATING COMPOSITION AND PATTERNING PROCESS - A protective coating composition comprising a copolymer of an alkali-soluble (α-trifluoromethyl)acrylate and a norbornene derivative as a base polymer, optionally in admixture with a second polymer containing sulfonic acid and/or sulfonic acid amine salt in repeat units is applied onto a resist film. The protective coating is effective in minimizing development defects and forming a resist pattern of improved profile. | 11-19-2009 |
| 20100055608 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS - A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R | 03-04-2010 |
| 20100062380 | DOUBLE PATTERNING PROCESS - A double pattern is formed by coating a first positive resist composition onto a substrate, patternwise exposure to radiation, and development with alkaline developer to form a first resist pattern; applying heat and/or radiation to render the first resist pattern insoluble in a second solvent and in a second developer; coating a second resist composition on the first resist pattern, patternwise exposure to radiation, and development with second developer to form a second resist pattern. The resin in the first resist composition comprises recurring units of formula (1) wherein R | 03-11-2010 |
| 20100086878 | PATTERNING PROCESS - A pattern is formed by applying a first positive resist material onto a substrate, heat treating, exposing to high-energy radiation, heat treating, then developing with a developer to form a first resist pattern; applying a protective coating solution comprising a hydrolyzable silicon compound having an amino group onto the first resist pattern and the substrate, heating to form a protective coating; and applying a second positive resist material thereon, heat treating, exposing to high-energy radiation, heat treating, and then developing with a developer to form a second resist pattern. By forming the second pattern in a space portion of the first pattern, this double patterning reduces the pattern pitch to one half. | 04-08-2010 |
| 20100099042 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS - A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R | 04-22-2010 |
| 20100104977 | PHOTORESIST UNDERCOAT-FORMING MATERIAL AND PATTERNING PROCESS - A material comprising a novolac resin having a C | 04-29-2010 |
| 20100112482 | FLUORINATED MONOMER OF CYCLIC ACETAL STRUCTURE, POLYMER, RESIST PROTECTIVE COATING COMPOSITION, RESIST COMPOSITION, AND PATTERNING PROCESS - A fluorinated monomer of cyclic acetal structure has formula (1) wherein R is a C | 05-06-2010 |
| 20100136482 | RESIST COMPOSITION AND PATTERNING PROCESS - A resist composition is provided comprising (A) an additive polymer of acyl-protected hexafluoroalcohol structure, (B) a base polymer having a structure derived from lactone ring, hydroxyl group and/or maleic anhydride, the base polymer becoming soluble in alkaline developer under the action of acid, (C) a photoacid generator, and (D) an organic solvent. The additive polymer is transparent to radiation of wavelength up to 200 nm, and its properties can be tailored by a choice of the polymer structure. | 06-03-2010 |
| 20100136486 | RESIST PROTECTIVE COATING COMPOSITON AND PATTERNING PROCESS - A protective coating composition comprising a polymer of acyl-protected hexafluoroalcohol structure as a base polymer, optionally in admixture with a second polymer containing sulfonic acid amine salt in recurring units is applied onto a resist film. The protective coating is transparent to radiation of wavelength up to 200 nm. | 06-03-2010 |
| 20100151381 | ANTIREFLECTIVE COATING COMPOSITION, ANTIREFLECTIVE COATING , AND PATTERNING PROCESS - A composition comprising (A) a fluorinated polymer having k=0.01-0.4 and n=1.4-2.1 and (B) an aromatic ring-bearing polymer having k=0.3-1.2 is used to form an antireflective coating. The ARC-forming composition can be deposited by the same process as prior art ARCs. The resulting ARC is effective in preventing reflection of exposure light in photolithography and has an acceptable dry etching rate. | 06-17-2010 |
| 20100159392 | PATTERNING PROCESS AND RESIST COMPOSITION - A pattern is formed by coating a first positive resist composition comprising a copolymer comprising lactone-containing recurring units and acid labile group-containing recurring units onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, applying an amine or oxazoline compound to the first resist pattern for inactivation, coating a second positive resist composition comprising a C | 06-24-2010 |
| 20100159404 | PATTERNING PROCESS - A pattern is formed by applying a first positive resist composition onto a substrate, heat treatment, exposure, heat treatment and development to form a first resist pattern; causing the first resist pattern to crosslink and cure by irradiation of high-energy radiation of 200-320 nm wavelength; further applying a second positive resist composition onto the substrate, heat treatment, exposure, heat treatment and development to form a second resist pattern. The double patterning process reduces the pitch between patterns to one half. | 06-24-2010 |
| 20100178617 | PATTERNING PROCESS - A pattern is formed by coating a chemically amplified positive resist composition comprising a resin comprising acid labile group-containing recurring units and a photoacid generator onto a substrate, drying to form a resist film, exposing the resist film to high-energy radiation, PEB, developing to form a positive pattern, illuminating or heating the positive pattern to eliminate acid labile groups for increasing alkaline solubility and to induce crosslinking for imparting solvent resistance, coating a reversal film, forming a space pattern, and shrinking the space pattern. | 07-15-2010 |
| 20100178618 | PATTERNING PROCESS - A pattern is formed by coating a chemically amplified positive resist composition comprising a resin comprising acid labile group-containing recurring units and a photoacid generator onto a substrate, drying to form a resist film, exposing the resist film to high-energy radiation through a phase shift mask having a lattice-like array of shifters, PEB, developing to form a positive pattern, illuminating or heating the positive pattern to eliminate acid labile groups for increasing alkaline solubility and to induce crosslinking for imparting solvent resistance, coating a reversal film, and dissolving away the positive pattern in an alkaline wet etchant to form a pattern by way of positive/negative reversal. | 07-15-2010 |
| 20100203457 | PATTERNING PROCESS - A pattern is formed by coating a chemically amplified positive resist composition comprising a resin comprising acid labile group-containing recurring units and a photoacid generator onto a substrate, drying to form a resist film, exposing the resist film to high-energy radiation through a phase shift mask including a lattice-like first shifter and a second shifter arrayed on the first shifter and consisting of lines which are thicker than the line width of the first shifter, PEB, developing to form a positive pattern, illuminating or heating the positive pattern to eliminate acid labile groups for increasing alkaline solubility and to induce crosslinking for imparting solvent resistance, coating a reversal film, and dissolving away the positive pattern in an alkaline wet etchant to form a pattern by way of positive/negative reversal. | 08-12-2010 |
| 20100209849 | PATTERN FORMING PROCESS AND RESIST-MODIFYING COMPOSITION - A patterning process includes (1) coating and baking a first positive resist composition to form a first resist film, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) applying a resist-modifying composition to the first resist pattern and heating to modify the first resist pattern, (3) coating and baking a second positive resist composition to form a second resist film, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The modified first resist film has a contact angle with pure water of 50°-85°. | 08-19-2010 |
| 20100227273 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A positive resist composition comprising as a base resin a polymer having carboxyl groups whose hydrogen is substituted by an acid labile group of acenaphthene structure exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal LER after exposure, a significant effect of suppressing acid diffusion rate, and improved etching resistance. | 09-09-2010 |
| 20100227274 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A positive resist composition comprising as a base resin a polymer having carboxyl groups whose hydrogen is substituted by an acid labile group of fluorene structure exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal LER after exposure, a significant effect of suppressing acid diffusion rate, and improved etching resistance. | 09-09-2010 |
| 20100266957 | RESIST COMPOSITION AND PATTERNING PROCESS - An additive polymer comprising recurring units of formula (1) is added to a resist composition comprising a base resin, a photoacid generator, and an organic solvent. R | 10-21-2010 |
| 20100297554 | RESIST-MODIFYING COMPOSITION AND PATTERN FORMING PROCESS - A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist-modifying composition comprises a carbamate compound and a solvent. | 11-25-2010 |
| 20100297563 | RESIST-MODIFYING COMPOSITION AND PATTERN FORMING PROCESS - A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist modifying composition comprises a base resin comprising recurring units having formula (1) wherein A | 11-25-2010 |
| 20100304297 | PATTERNING PROCESS AND RESIST COMPOSITION - A pattern is formed by coating a first positive resist composition comprising a base resin, a photoacid generator, and a base generator onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for causing the base generator to generate a base for inactivating the pattern to acid, coating a second positive resist composition comprising a C | 12-02-2010 |
| 20110033803 | PATTERNING PROCESS AND RESIST COMPOSITION - A pattern is formed by coating a first positive resist composition comprising a copolymer comprising lactone-containing recurring units, acid labile group-containing recurring units and carbamate-containing recurring units, and a photoacid generator onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for inactivation to acid, coating a second positive resist composition comprising a C | 02-10-2011 |
| 20110091812 | PATTERNING PROCESS AND RESIST COMPOSITION - The process forms a pattern by applying a resist composition onto a substrate to form a resist film, baking, exposure, post-exposure baking, and development. The resist composition comprises a polymer comprising recurring units having an acid labile group and substantially insoluble in alkaline developer, a PAG, a PBG capable of generating an amino group, a quencher for neutralizing the acid from PAG for inactivation, and an organic solvent. A total amount of amino groups from the quencher and PBG is greater than an amount of acid from PAG. An unexposed region and an over-exposed region are not dissolved in developer whereas only an intermediate exposure dose region is dissolved in developer. Resolution is doubled by splitting a single line into two through single exposure and development. | 04-21-2011 |
| 20110129777 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS - A chemically amplified resist composition comprising a base polymer, an acid generator, and a basic compound of thiomorpholine dioxide structure has many advantages including a high contrast of alkaline dissolution rate before and after exposure, a good pattern profile after exposure, minimized roughness, and a wide focus margin. The resist composition which may be positive or negative is useful for the fabrication of VLSI and photomasks. | 06-02-2011 |
| 20110171580 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A positive resist composition comprising a polymer having a tetrahydrobenzocycloheptane-substituted secondary or tertiary carboxyl group ester as an acid labile group exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal edge roughness after exposure, a significant effect of suppressing acid diffusion rate, and improved etching resistance. | 07-14-2011 |
| 20110177462 | PATTERNING PROCESS - A pattern is formed by coating a resist composition comprising a polymer comprising recurring units having an optionally acid labile group-substituted naphthol group, an acid generator, and an organic solvent onto a substrate, baking to form a resist film, exposing the resist film to high-energy radiation, baking, and developing the exposed film with an organic solvent developer to form a negative pattern wherein the unexposed region of film is dissolved and the exposed region of film is not dissolved. In the process of image formation via positive/negative reversal by organic solvent development, the resist film has a high dissolution contrast and controlled acid diffusion. By subjecting the resist film to exposure through a mask having a lattice-like pattern and organic solvent development, a fine hole pattern can be formed at a high precision of dimensional control. | 07-21-2011 |
| 20110212390 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS - A chemically amplified negative resist composition is provided comprising (A) an alkali-soluble base polymer, (B) an acid generator, and (C) a nitrogen-containing compound, the base polymer (A) turning alkali insoluble under the catalysis of acid. A polymer having a fluorinated carboxylic acid onium salt on a side chain is included as the base polymer. Processing the negative resist composition by a lithography process may form a resist pattern with advantages including uniform low diffusion of acid, improved LER, and reduced substrate poisoning. | 09-01-2011 |
| 20110212391 | POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS - A polymer comprising recurring units having a fluorinated carboxylic acid onium salt structure on a side chain is used to formulate a chemically amplified positive resist composition. When the composition is processed by lithography to form a positive pattern, the diffusion of acid in the resist film is uniform and slow, and the pattern is improved in LER. | 09-01-2011 |
| 20110236826 | PATTERNING PROCESS, RESIST COMPOSITION, AND ACETAL COMPOUND - A pattern is formed by applying a resist composition comprising a polymer comprising recurring units having an acid labile group-substituted hydroxyl group, an acid generator, and an organic solvent onto a substrate, prebaking the composition to form a resist film, exposing the resist film to high-energy radiation to define exposed and unexposed regions, baking, and developing the exposed film with an organic solvent developer to form a negative pattern wherein the unexposed region of film is dissolved and the exposed region of film is not dissolved. | 09-29-2011 |
| 20110236831 | ACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS - The invention provides an acetal compound containing an adamantane ring having an alcoholic hydroxyl group which is protected with an acetal group having a carbonyl moiety of branched structure. A photoresist film comprising a polymer comprising recurring units derived from the acetal compound and an acid generator is characterized by a high dissolution contrast when it is subjected to exposure and organic solvent development to form an image via positive/negative reversal. | 09-29-2011 |
| 20110294070 | MONOMER, POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS - A polymer is obtained from a hydroxyphenyl methacrylate monomer having an acid labile group substituted thereon. A positive resist composition comprising the polymer as a base resin has a very high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good profile and minimal line edge roughness of a pattern after exposure, a retarded acid diffusion rate, and good etching resistance. | 12-01-2011 |
| 20120009527 | PATTERNING PROCESS - A pattern is formed by coating a resist composition comprising a polymer comprising recurring units having an acid labile group-substituted hydroxyl group and recurring units having an acid labile group-substituted carboxyl group, an acid generator, and an organic solvent onto a substrate, prebaking to form a resist film, exposing the resist film to high-energy radiation, PEB, and developing the exposed film two times with an organic solvent and an alkaline aqueous solution. Due to the two developments, one line is divided into two lines, achieving a resolution doubling the mask pattern. | 01-12-2012 |
| 20120009529 | PATTERNING PROCESS - A pattern is formed by applying a resist composition comprising a (meth)acrylate copolymer comprising both recurring units having an acid labile group-substituted carboxyl group and recurring units having a lactone ring, an acid generator, and an organic solvent onto a substrate, prebaking the composition to form a resist film, exposing the resist film to high-energy radiation, baking, and developing the exposed film with a developer. The developer comprises at least 40 wt % of an organic solvent selected from methyl benzoate, ethyl benzoate, phenyl acetate, benzyl acetate, methyl phenylacetate, benzyl formate, phenylethyl formate, methyl 3-phenylpropionate, benzyl propionate, ethyl phenylacetate, and 2-phenylethyl acetate. | 01-12-2012 |
| 20120058428 | PATTERNING PROCESS AND RESIST COMPOSITION - A pattern is formed by coating a first positive resist composition comprising a base resin, a photoacid generator, and a base generator having both a 9-fluorenylmethyloxycarbonyl-substituted amino group and a carboxyl group onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for causing the base generator to generate a base for inactivating the pattern to acid, coating a second positive resist composition comprising an alcohol and an optional ether onto the first resist pattern-bearing substrate to form a second resist film, patternwise exposure, PEB, and development to form a second resist pattern. | 03-08-2012 |
| 20120108043 | PATTERN FORMING PROCESS - A resist pattern is formed by coating a first positive resist composition comprising a polymer comprising 20-100 mol % of aromatic group-containing recurring units and adapted to turn alkali soluble under the action of an acid onto a substrate to form a first resist film, coating a second positive resist composition comprising a C | 05-03-2012 |
| 20120129103 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, PATTERNING PROCESS, AND SULFONIUM SALT MONOMER AND MAKING METHOD - A sulfonium salt having a 4-fluorophenyl group is introduced as recurring units into a polymer comprising hydroxyphenyl (meth)acrylate units and acid labile group-containing (meth)acrylate units to form a polymer which is useful as a base resin in a resist composition. The resist composition has a high sensitivity, high resolution and minimized LER. | 05-24-2012 |
| 20120135349 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A polymer obtained from copolymerization of a recurring unit having a carboxyl group and/or phenolic hydroxyl group substituted with an acid labile group with a methacrylate having a phenolic hydroxyl-bearing pyridine is useful as a base resin in a positive resist composition. The resist composition comprising the polymer is improved in contrast of alkali dissolution rate before and after exposure, acid diffusion control, resolution, and profile and edge roughness of a pattern after exposure. | 05-31-2012 |
| 20120141938 | BASIC COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS - A chemically amplified resist composition comprising a base polymer, an acid generator, and an amine quencher in the form of a β-alanine, γ-aminobutyric acid or 5-aminovaleric acid derivative having an acid labile group-substituted carboxyl group has a high contrast of alkaline dissolution rate before and after exposure and forms a pattern of good profile at a high resolution, minimal roughness and wide focus margin. | 06-07-2012 |
| 20120183903 | PATTERNING PROCESS AND RESIST COMPOSITION - A pattern is formed by applying a resist composition comprising a polymer comprising recurring units having a nitrogen atom bonded to an acid labile group, an acid generator, and an organic solvent onto a substrate, prebaking to form a resist film, exposing the resist film to high-energy radiation, baking, and developing the exposed film with an organic solvent developer to form a negative pattern wherein the unexposed region of film is dissolved and the exposed region of film is not dissolved. | 07-19-2012 |
| 20120183904 | NITROGEN-CONTAINING MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS - A chemically amplified positive resist composition of better performance can be formulated using a polymer having a quencher incorporated therein, specifically a polymer comprising recurring units having a carbamate structure which is decomposed with an acid to generate an amino group and optionally recurring units having an acid labile group capable of generating a carboxyl and/or hydroxyl group under the action of an acid. The polymer is highly effective for suppressing diffusion of acid and diffuses little itself, and the composition forms a pattern of rectangular profile at a high resolution. | 07-19-2012 |
| 20120196227 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, PATTERNING PROCESS, AND ACID-DECOMPOSABLE KETO ESTER COMPOUND - A chemically amplified positive resist composition comprises an acid-decomposable keto ester compound of steroid skeleton which is insoluble in alkaline developer, but turns soluble in alkaline developer under the action of acid. The composition is exposed to EB, deep-UV or EUV and developed to form a pattern with a high resolution and improved LER. | 08-02-2012 |
| 20120202153 | RESIST COMPOSITION AND PATTERNING PROCESS - A resist composition comprising a polymer having recurring units having an acid labile group and recurring units of a magnesium, copper, zinc or cesium salt of (meth)acrylic acid, styrenecarboxylic acid or vinylnaphthalenecarboxylic acid copolymerized together exhibits a high resolution, high sensitivity, and minimal LER. The resist composition is best suited as the patterning material for VLSIs and photomasks. | 08-09-2012 |
| 20120202158 | PATTERNING PROCESS - A negative pattern is formed by coating a resist composition onto a substrate, exposure, bake, and development in alkaline water. The resist composition comprises a polymer comprising acid labile group-containing recurring units, adapted to turn soluble in alkaline developer under the action of acid, an acid generator and/or an acid, a photobase generator capable of generating an amino-containing compound, a quencher for neutralizing acid for inactivation, and an organic solvent. | 08-09-2012 |
| 20120208125 | RESIST COMPOSITION AND PATTERNING PROCESS - A resist composition comprising a complex of a β-diketone with a metal selected from magnesium, chromium, manganese, iron, cobalt, nickel, copper, zinc, silver, cadmium, indium, tin, antimony, cesium, zirconium, and hafnium, and a solvent is improved in film uniformity when coated, and exhibits a high resolution, high sensitivity, and minimal LER when processed by the EB or EUV lithography. | 08-16-2012 |
| 20120208127 | RESIST COMPOSITION AND PATTERNING PROCESS - A resist composition comprising a salt of a mono- to tetrafunctional carboxylic acid with a metal selected from magnesium, chromium, manganese, iron, cobalt, nickel, copper, zinc, silver, cadmium, indium, tin, antimony, cesium, zirconium, and hafnium, and a solvent is improved in film uniformity when coated, and exhibits a high resolution, high sensitivity, and minimal LER when processed by the EB or EUV lithography. | 08-16-2012 |
| 20120220112 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A positive resist composition based on a polymer comprising recurring units of (meth)acrylate having a cyclic acid labile group and a dihydroxynaphthalene novolak resin, and containing a photoacid generator is improved in resolution, step coverage and adhesion on a highly reflective stepped substrate, has high resolution, and forms a pattern of good profile and minimal edge roughness through exposure and development. | 08-30-2012 |
| 20120249995 | RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD - The invention is a protective film material for immersion lithography that enables desirable immersion lithography, can be removed simultaneously with development of a photoresist layer, and has excellent process adaptability. The invention also includes a method for forming a pattern using the material. More specifically, the invention is a protective film material comprising (i) a blend of a polymer comprising a repeating unit having a fluorine-containing alkyl or alkylene group which contains at least one fluorine atom and an optional alkali soluble repeating unit and a polymer comprising a repeating unit having a fluorine-free alkyl group and an optional alkali soluble repeating unit, or (ii) a polymer comprising a repeating unit having a fluorine-containing alkyl or alkylene group which contains at least one fluorine atom and a repeating unit having a fluorine-free alkyl group and an optional alkali-soluble repeating unit. | 10-04-2012 |
| 20120276485 | PATTERNING PROCESS - A negative pattern is formed by applying a resist composition onto a substrate, baking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to selectively dissolve the unexposed region of resist film. The resist composition comprising a hydrogenated ROMP polymer and a (meth)acrylate resin displays a high dissolution contrast in organic solvent development, and exhibits high dry etch resistance even when the acid labile group is deprotected through exposure and PEB. | 11-01-2012 |
| 20120288796 | RESIST COMPOSITION AND PATTERNING PROCESS - A resist composition is provided comprising a polymer comprising recurring units having a hydroxyl group substituted with an acid labile group, an onium salt PAG capable of generating a sulfonic acid, imide acid or methide acid, and an onium salt PAG capable of generating a carboxylic acid. A resist film of the composition is improved in dissolution contrast during organic solvent development, and from which a hole pattern having minimized nano-edge roughness can be formed via positive/negative reversal. | 11-15-2012 |
| 20120308930 | PATTERNING PROCESS AND RESIST COMPOSITION - A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer comprising recurring units having an acid labile group-substituted carboxyl group and/or hydroxy group and recurring units having an oxirane or oxetane ring, an acid generator, and an organic solvent displays a high dissolution contrast in organic solvent development and controlled acid diffusion. A fine hole pattern featuring good size control can be formed. | 12-06-2012 |
| 20120315581 | PATTERNING PROCESS AND RESIST COMPOSITION - A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer comprising recurring units of (meth)acrylate having two adjacent hydroxyl groups substituted with acid labile groups, an acid generator, and an organic solvent displays a high dissolution contrast between the unexposed region of promoted dissolution and the exposed region of inhibited dissolution. | 12-13-2012 |
| 20120328987 | PATTERNING PROCESS AND RESIST COMPOSITION - A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer comprising recurring units of cycloolefin having a hydroxyl group substituted with an acid labile group, an acid generator, and an organic solvent displays a high dissolution contrast and high etch resistance. | 12-27-2012 |
| 20130017492 | PATTERNING PROCESS AND RESIST COMPOSITIONAANM Hatakeyama; JunAACI Joetsu-shiAACO JPAAGP Hatakeyama; Jun Joetsu-shi JPAANM Hasegawa; KojiAACI Joetsu-shiAACO JPAAGP Hasegawa; Koji Joetsu-shi JPAANM Katayama; KazuhiroAACI Joetsu-shiAACO JPAAGP Katayama; Kazuhiro Joetsu-shi JP - An image is formed via positive/negative reversal on organic solvent development using a photoresist film comprising a polymer comprising recurring units of isosorbide (meth)acrylate in which one hydroxyl group of isosorbide is bonded to form (meth)acrylate and the other hydroxyl group is substituted with an acid labile group and an acid generator. The resist film is characterized by a high dissolution contrast between the unexposed and exposed regions. The photoresist film is exposed to radiation and developed in an organic solvent to form a fine hole pattern with good size control and high sensitivity. | 01-17-2013 |
| 20130029269 | POSITIVE RESIST COMPOSITION AND PATTTERNING PROCESS - A positive resist composition comprising a polymer having carboxyl groups substituted with an acid labile group having formula (1) exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal edge roughness. In formula (1), A is —(CR | 01-31-2013 |
| 20130029270 | RESIST COMPOSITION AND PATTERNING PROCESS - A resist composition is provided comprising a (co)polymer comprising recurring units of acid labile group-substituted (meth)acrylic acid, styrenecarboxylic acid or vinylnaphthalenecarboxylic acid and/or recurring units having an acid labile group-substituted phenolic hydroxyl group, an acid generator, and a metal salt of carboxylic acid or a metal complex of β-diketone. Due to a high contrast of alkaline dissolution rate before and after exposure, high resolution, high sensitivity, and controlled acid diffusion rate, the composition forms a pattern with satisfactory profile and minimal LER. | 01-31-2013 |
| 20130065183 | PATTERNING PROCESS AND RESIST COMPOSITION - A resist composition is provided comprising a polymer comprising recurring units having a protected hydroxyl group, a photoacid generator, an organic solvent, and a hydroxyl-free polymeric additive comprising fluorinated recurring units. A negative pattern is formed by coating the resist composition, prebaking to form a resist film, exposing, baking, and developing the exposed film in an organic solvent-based developer to selectively dissolve the unexposed region of resist film. | 03-14-2013 |
| 20130071788 | PATTERNING PROCESS AND RESIST COMPOSITION - A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units of acid labile group-substituted vinyl alcohol and maleic anhydride and/or maleimide, an acid generator, and an organic solvent onto a substrate, prebaking, exposing to high-energy radiation, and developing in an organic solvent developer such that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. In image formation via positive/negative reversal by organic solvent development, the resist film is characterized by a high dissolution contrast between the unexposed and exposed regions. | 03-21-2013 |
| 20130084527 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A positive resist composition comprising a polymer having carboxyl groups substituted with an acid labile group having formula (1) exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a reduced acid diffusion rate, and forms a pattern with good profile, minimal edge roughness, and etch resistance. In formula (1), R | 04-04-2013 |
| 20130084528 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A positive resist composition comprising a polymer having carboxyl groups substituted with an acid labile group having formula (1) exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a reduced acid diffusion rate, and forms a pattern with good profile, minimal edge roughness, and etch resistance. In formula (1), R | 04-04-2013 |
| 20130084529 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A positive resist composition comprising a polymer having carboxyl groups substituted with an acid labile group having formula (1), (2) or (3) exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a reduced acid diffusion rate, and forms a pattern with good profile, minimal edge roughness, and etch resistance. In formula (1), R | 04-04-2013 |
| 20130101936 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A positive resist composition comprising (A) a polymer comprising recurring units containing an acid labile group, recurring units having a lactone ring, and recurring units having an oxirane ring, the polymer being adapted to increase alkaline dissolution under the action of an acid, (B) a photoacid generator, and (C) a solvent forms a fine pattern with improved LWR, improved MEF, rectangular profile, and collapse resistance. | 04-25-2013 |
| 20130108960 | PATTERNING PROCESS AND RESIST COMPOSITION | 05-02-2013 |
| 20130108964 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS | 05-02-2013 |
| 20130130177 | NEGATIVE PATTERN FORMING PROCESS AND NEGATIVE RESIST COMPOSITION - A negative pattern is formed by applying a resist composition comprising (A) a polymer comprising recurring units (a1) having a hydroxyl group protected with an acid labile group and recurring units (a2) having an amino group, amide bond, carbamate bond or nitrogen-containing heterocycle, (B) a photoacid generator, and (C) an organic solvent onto a substrate, prebaking, exposing, baking, and selectively dissolving an unexposed region of the resist film in an organic solvent-based developer. | 05-23-2013 |
| 20130130183 | NEGATIVE PATTERN FORMING PROCESS - A negative pattern is formed by applying a resist composition comprising (A) a polymer comprising recurring units (a | 05-23-2013 |
| 20130143162 | RESIST-PROTECTIVE FILM-FORMING COMPOSITION AND PATTERNING PROCESS - A pattern is printed by forming a photoresist layer on a wafer, forming a protective film thereon, exposure, and development. The protective film is formed from a protective film-forming composition comprising a novolak resin of a bisphenol compound and a mixture of an alcohol solvent and an ether or aromatic solvent. | 06-06-2013 |
| 20130143163 | RESIST-PROTECTIVE FILM-FORMING COMPOSITION AND PATTERNING PROCESS - A pattern is printed by forming a photoresist layer on a wafer, forming a protective film thereon, exposure, and development. The protective film is formed from a composition comprising a copolymer of hydroxystyrene with acenaphthylene and/or vinylnaphthalene and a mixture of an alcohol solvent and an ether or aromatic solvent. | 06-06-2013 |
| 20130157194 | PATTERNING PROCESS, RESIST COMPOSITION, POLYMER, AND POLYMERIZABLE ESTER COMPOUND - A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer adapted to form a lactone ring under the action of an acid so that the polymer may reduce its solubility in an organic solvent developer, an acid generator, and an organic solvent displays a high dissolution contrast between the unexposed region of promoted dissolution and the exposed region of inhibited dissolution. | 06-20-2013 |
| 20130183621 | PATTERN FORMING PROCESS AND RESIST COMPOSTION - A resist composition is provided comprising a polymer comprising recurring units having a carboxyl group substituted with an acid labile group, an acid generator, a sulfonium or iodonium salt of fluoroalkanesulfonamide and an organic solvent. A positive pattern is formed by applying the resist composition onto a substrate, prebaking to form a resist film, exposing the resist film to high-energy radiation, baking, and immersing in an alkaline developer to dissolve away the exposed region of resist film, but not the unexposed region. | 07-18-2013 |
| 20130209935 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS - A polymer is prepared from an adamantane methacrylate monomer whose alcoholic hydroxyl group is protected with an alicyclic-containing tertiary alkyl group. A photoresist composition comprising the polymer displays a high sensitivity and a high dissolution contrast during both alkaline development and organic solvent development. | 08-15-2013 |
| 20130209936 | PATTERNING PROCESS AND RESIST COMPOSITION - A pattern is formed by coating a first positive resist composition comprising a copolymer comprising lactone-containing recurring units, acid labile group-containing recurring units and carbamate-containing recurring units, and a photoacid generator onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for inactivation to acid, coating a second positive resist composition comprising a C | 08-15-2013 |
| 20130231491 | FLUORINATED MONOMER OF CYCLIC ACETAL STRUCTURE, POLYMER, RESIST PROTECTIVE COATING COMPOSITION, RESIST COMPOSITION, AND PATTERNING PROCESS - A fluorinated monomer of cyclic acetal structure has formula (1) wherein R is a C | 09-05-2013 |
| 20130288180 | MONOMER, POLYMER, POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A polymer for use in resist compositions is obtained from a monomer having formula (1) wherein R | 10-31-2013 |
| 20130309606 | RESIST COMPOSITION, PATTERNING PROCESS, MONOMER, AND COPOLYMER - A polymer is obtained from copolymerization of a recurring unit having a carboxyl and/or phenolic hydroxyl group substituted with an acid labile group and a recurring unit having formula (1) wherein R | 11-21-2013 |
| 20130323646 | RESIST COMPOSITION AND PATTERNING PROCESS - A polymer is obtained from copolymerization of a unit having a carboxyl and/or phenolic hydroxyl group substituted with an acid labile group with a hydroxyphenyl methacrylate unit having one acyl, acyloxy or alkoxycarbonyl group. The polymer is useful as a base resin in a positive resist composition. The resist composition comprising the polymer is improved in contrast of alkali dissolution rate before and after exposure, acid diffusion control, resolution, and profile and edge roughness of a pattern after exposure. | 12-05-2013 |
| 20130323647 | POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS - A photo or heat-sensitive polymer comprising recurring units having polymerizable anion-containing sulfonium salt and phenolic hydroxyl-containing recurring units is useful as a base resin to formulate a resist composition having high sensitivity, high resolution and low LWR. | 12-05-2013 |
| 20130337378 | SULFONIUM SALT, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS - A sulfonium salt comprising (a) a polymerizable substituent, (b) a sulfonium cation, and (c) a sulfonate anion within a common molecule is capable of generating a sulfonic acid in response to high-energy radiation or heat. A resist composition comprising the sulfonium salt as base resin has high resolution and is suited for precise micropatterning by ArF immersion, EB or EUV lithography. | 12-19-2013 |
| 20130337383 | PATTERNING PROCESS AND RESIST COMPOSITION - A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units having a carboxyl group substituted with an acid labile group of tertiary ester and an optional acid generator onto a substrate, prebaking, exposing to high-energy radiation, baking, and developing in an organic solvent developer so that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. The resist composition exhibits a high dissolution contrast during organic solvent development and forms a fine hole or trench pattern at a high sensitivity and dimensional control. | 12-19-2013 |
| 20130344442 | POLYMER, POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A polymer comprising recurring units of butyrolactone (meth)acrylate, recurring units having a carboxyl or phenolic group which is substituted with an acid labile group, and recurring units having a phenol group or an adhesive group in the form of 2,2,2-trifluoro-1-hydroxyethyl is quite effective as a base resin for resist. A positive resist composition comprising the polymer is improved in such properties as a contrast of alkali dissolution rate before and after exposure, acid diffusion suppressing effect, resolution, and profile and edge roughness of a pattern after exposure. | 12-26-2013 |
| 20140011136 | PATTERNING PROCESS AND RESIST COMPOSITION - A negative pattern is formed by coating a resist composition comprising a branched polymer having chains extending in at least three directions and an optional acid generator onto a substrate, prebaking, exposing to high-energy radiation, baking, and developing in an organic solvent developer so that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. The resist composition exhibits a high dissolution contrast and no swell during organic solvent development, and forms a pattern without collapse and bridging defects. | 01-09-2014 |
| 20140045122 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A positive resist composition comprises a polymer having a carboxyl group substituted with an acid labile group having formula (1) wherein R | 02-13-2014 |
| 20140045123 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS - A polymer comprising recurring units derived from a (meth)acrylate monomer of tertiary ester type having branched alkyl on alicycle is used to form a resist composition. When subjected to exposure, PEB and organic solvent development, the resist composition is improved in dissolution contrast. | 02-13-2014 |
| 20140051026 | PATTERNING PROCESS AND RESIST COMPOSITION - A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units having a tertiary ester type acid labile group having a plurality of methyl or ethyl groups on alicycle and an acid generator onto a substrate, prebaking, exposing to high-energy radiation, baking, and developing in an organic solvent developer so that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. The resist composition exhibits a high dissolution contrast during organic solvent development and forms a fine hole or trench pattern of dimensional uniformity. | 02-20-2014 |
| 20140065544 | RESIST COMPOSITION AND PATTERNING PROCESS - A polymer capable of increasing alkali solubility under the action of acid, as a base resin is blended with a copolymer comprising recurring units derived from acenaphthylene, indene, benzofuran or benzothiophene and fluorine-containing recurring units, as a polymeric additive to formulate a resist composition. The photoresist film formed using the resist composition is effective for minimizing outgassing therefrom during the EUV lithography. The resist film has a hydrophilic surface and is effective for suppressing formation of blob defects after development. | 03-06-2014 |
| 20140065545 | RESIST COMPOSITION AND PATTERNING PROCESS - A polymer capable of increasing alkali solubility under the action of acid, as a base resin is blended with a copolymer comprising recurring units derived from (meth)acrylate, vinyl ether, vinylfluorene, vinylanthracene, vinylpyrene, vinylbiphenyl, stilbene, styrylnaphthalene or dinaphthylethylene, and fluorine-containing recurring units, as a polymeric additive to formulate a resist composition. The photoresist film formed using the resist composition is effective for minimizing outgassing therefrom during the EUV lithography. The resist film has a hydrophilic surface and is effective for suppressing formation of blob defects after development. | 03-06-2014 |
| 20140065546 | RESIST COMPOSITION AND PATTERNING PROCESS - A polymer capable of increasing alkali solubility under the action of acid, as a base resin is blended with a polymer comprising recurring units derived from a styrene having 1,1,1,3,3,3-hexafluoro-2-propanol as a polymeric additive to formulate a resist composition. The photoresist film formed using the resist composition is effective for minimizing outgassing therefrom during the EUV lithography, reducing LWR after development, and suppressing formation of blob defects after development because of its hydrophilic surface. | 03-06-2014 |
| 20140080055 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS - A chemically amplified resist composition comprising a base polymer and an amine quencher in the form of a β-alanine, γ-aminobutyric acid, 5-aminovaleric acid, 6-aminocaproic acid, 7-aminoheptanoic acid. 8-aminooctanoic acid or 9-aminononanoic acid derivative having an unsubstituted carboxyl group has a high contrast of alkaline dissolution in rate before and after exposure and forms a pattern of good profile at a high resolution, minimal roughness and wide DOF. | 03-20-2014 |
| 20140080064 | RESIST PROTECTIVE FILM-FORMING COMPOSITION AND PATTERNING PROCESS - A pattern is printed by forming a photoresist layer on a wafer, forming a protective film thereon, exposure, and development. The protective film is formed from a composition comprising a copolymer comprising recurring units derived from a styrene, indene, benzofuran or benzothiophene monomer having 1,1,1,3,3,3-hexafluoro-2-propanol, and recurring units derived from a styrene, vinylnaphthalene, indene, benzofuran, benzothiophene, stilbene, styrylnaphthalene or dinaphthylethylene monomer and an ether solvent. | 03-20-2014 |
| 20140141377 | DEVELOPER AND PATTERNING PROCESS - An aqueous solution containing 0.1-10 wt % of a guanidine is a useful developer for photosensitive resist materials. A resist pattern is formed by applying a chemically amplified positive resist composition onto a substrate to form a coating, baking, exposing the coating to high-energy radiation, and developing the exposed coating in a guanidine-containing aqueous solution. | 05-22-2014 |
| 20140162188 | POSITIVE RESIST COMPOSITION, MONOMER, POLYMER, AND PATTERNING PROCESS - A positive resist composition is provided comprising a polymer comprising recurring styrene units having an ester group bonded to a CF | 06-12-2014 |
| 20140162189 | SULFONIUM SALT, POLYMER, POLYMER MAKING METHOD, RESIST COMPOSITION, AND PATTERNING PROCESS - A sulfonium salt having formula (1a) is provided wherein R | 06-12-2014 |
| 20140178818 | RESIST COMPOSITION AND PATTERNING PROCESS - An additive polymer comprising recurring units derived from a fluorosulfonamide-substituted styrene and recurring units derived from a stilbene, styrylnaphthalene, dinaphthylethylene, acenaphthylene, indene, benzofuran, or benzothiophene derivative is added to a polymer capable of increasing alkali solubility under the action of acid to formulate a resist composition. The resist composition can minimize outgassing from a resist film during the EUV lithography and form a resist film having a hydrophilic surface sufficient to prevent formation of blob defects on the film after development. | 06-26-2014 |
| 20140178820 | RESIST COMPOSITION, PATTERNING PROCESS AND POLYMER - An additive polymer comprising recurring styrene units having an ester group bonded to a CF | 06-26-2014 |
| 20140199637 | PATTERN FORMING PROCESS - A pattern is formed by coating a first chemically amplified positive resist composition comprising a resin comprising recurring units having an acid labile group so that it may turn soluble in alkaline developer upon elimination of the acid labile group, a photoacid generator, and a first organic solvent, onto a processable substrate, prebaking, exposing, PEB, and developing in an alkaline developer to form a positive pattern; heating the positive pattern to render it resistant to a second organic solvent used in a second resist composition; coating the second resist composition, prebaking, exposing, PEB, and developing in a third organic solvent to form a negative pattern. The positive pattern and the negative pattern are simultaneously formed. | 07-17-2014 |
| 20140212810 | NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS - A polymer comprising recurring units (a) of styrene having an HFA group and an ester group adjacent thereto and recurring units (b) having a hydroxyl group is used as base resin to formulate a negative resist composition. The negative resist composition has a high dissolution contrast in alkaline developer, high sensitivity, high resolution, good pattern profile after exposure, and a suppressed acid diffusion rate. | 07-31-2014 |
| 20140234781 | PATTERN FORMING PROCESS - A pattern is formed by coating a resist composition comprising a resin comprising recurring units having an acid labile group, a photoacid generator, and a first organic solvent onto a processable substrate, prebaking, exposing, PEB, and developing in an organic solvent developer to form a negative pattern; heating the negative pattern to render it resistant to a second organic solvent; coating a solution containing Si, Ti, Zr, Hf, and/or Al and the second organic solvent thereon, prebaking, and dry etching to effect image reversal for converting the negative pattern into a positive pattern. | 08-21-2014 |
| 20140234785 | PATTERN FORMING PROCESS - A pattern is formed by coating a chemically amplified resist composition comprising a resin having a dissolution rate in an organic solvent developer that lowers under the action of acid onto a processable substrate, prebaking, exposing the resist film, PEB, developing in an organic solvent developer to form a negative pattern, coating a solution comprising Si, Ti, Zr, Hf or Al, prebaking, and dry etching to effect image reversal for converting the negative pattern into a positive pattern. | 08-21-2014 |
| 20140235057 | PATTERN FORMING PROCESS - A pattern is formed by coating a resist composition comprising a resin comprising recurring units having an acid labile group, a photoacid generator, and a first organic solvent onto a processable substrate, prebaking, exposing, PEB, and developing in an organic solvent developer to form a negative pattern; heating the negative pattern to render it resistant to a second organic solvent; coating a solution of a resin having a carbon content of at least 75 wt % in the second organic solvent thereon, prebaking, and dry etching to effect image reversal for converting the negative pattern into a positive pattern. | 08-21-2014 |
| 20140242518 | PATTERNING PROCESS AND RESIST COMPOSITION - A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer comprising recurring units of cycloolefin having a hydroxyl group substituted with an acid labile group, an acid generator, and an organic solvent displays a high dissolution contrast and high etch resistance. | 08-28-2014 |
| 20140272707 | SULFONIUM SALT, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS - A sulfonium salt having formula (1a) is provided wherein R | 09-18-2014 |
| 20140296561 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, PATTERNING PROCESS, AND SULFONIUM SALT MONOMER AND MAKING METHOD - A sulfonium salt having a 4-fluorophenyl group is introduced as recurring units into a polymer comprising hydroxyphenyl(meth)acrylate units and acid labile group-containing (meth)acrylate units to form a polymer which is useful as a base resin in a resist composition. The resist composition has a high sensitivity, high resolution and minimized LER. | 10-02-2014 |
| 20140315131 | DEVELOPER AND PATTERNING PROCESS - An aqueous solution containing 0.1-20 wt % of a benzyltrialkylammonium hydroxide is a useful developer for photosensitive resist materials. When an exposed resist film is developed in the developer, any swell of the resist film during development is suppressed. A resist pattern with minimal edge roughness can be formed while preventing pattern collapse or bridge defect formation. | 10-23-2014 |
| 20140363956 | UNDERLAYER FILM-FORMING COMPOSITION AND PATTERN FORMING PROCESS - In lithography, a composition comprising a novolak resin comprising recurring units of hydroxycoumarin is used to form a photoresist underlayer film. The underlayer film is strippable in alkaline water, without causing damage to ion-implanted Si substrates or SiO | 12-11-2014 |
| 20140363957 | UNDERLAYER FILM-FORMING COMPOSITION AND PATTERN FORMING PROCESS - In lithography, a composition comprising a novolak resin comprising recurring units of fluorescein is used to form a photoresist underlayer film. The underlayer film is strippable in alkaline water, without causing damage to ion-implanted Si substrates or SiO | 12-11-2014 |
| 20140363958 | UNDERLAYER FILM-FORMING COMPOSITION AND PATTERN FORMING PROCESS - In lithography, a composition comprising a novolak resin comprising recurring units derived from a naphtholphthalein is used to form a photoresist underlayer film. The underlayer film is strippable in alkaline water, without causing damage to ion-implanted Si substrates or SiO | 12-11-2014 |
| 20140370441 | DEVELOPER FOR PHOTOSENSITIVE RESIST MATERIAL AND PATTERNING PROCESS - An aqueous solution containing 0.1-20 wt % of a cyclic ammonium hydroxide is a useful developer for photosensitive resist materials. A resist pattern is formed by applying a chemically amplified positive resist composition onto a substrate to form a resist film, exposing the resist film to high-energy radiation, and developing the exposed resist film in a cyclic ammonium hydroxide-containing aqueous solution. | 12-18-2014 |
| 20140377706 | DEVELOPER FOR PHOTOSENSITIVE RESIST MATERIAL AND PATTERNING PROCESS - An aqueous solution containing 0.1-20 wt % of a substituted choline or thiocholine hydroxide is a useful developer for photosensitive resist materials. A resist pattern is formed by applying a chemically amplified positive resist composition onto a substrate to form a resist film, exposing the resist film to high-energy radiation, and developing the exposed resist film in an ammonium hydroxide-containing aqueous solution. | 12-25-2014 |
| 20150017586 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A positive resist composition is provided comprising a polymer comprising recurring units having a carboxyl or phenolic hydroxyl group substituted with an acid labile group and recurring units of hydroxyanthraquinone or hydroxy-2,3-dihydro-1,4-anthracenedione methacrylate, and having a Mw of 1,000-500,000. The resist composition has a satisfactory effect of suppressing acid diffusion and a high resolution, and forms a pattern of good profile and minimal edge roughness after exposure. | 01-15-2015 |
| 20150064626 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A positive resist composition is provided comprising a polymer comprising recurring units having a carboxyl and/or phenolic hydroxyl group substituted with an acid labile group and recurring units of tert-butyl or tert-amyl-substituted hydroxyphenyl methacrylate and having a weight average molecular weight of 1,000-500,000. The resist composition has a satisfactory effect of suppressing acid diffusion and a high resolution, and forms a pattern of good profile and minimal edge roughness after exposure. | 03-05-2015 |
| 20150086929 | PATTERN FORMING PROCESS AND SHRINK AGENT - A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a copolymer comprising recurring units having an α-trifluoromethylhydroxy or fluoroalkylsulfonamide group and recurring units having an acid labile group-substituted amino group in a C | 03-26-2015 |
