Patent application number | Description | Published |
20110204478 | INSULATOR LAYER BASED MEMS DEVICES - The present invention relates to using an insulator layer between two metal layers of a semiconductor die to provide a micro-electromechanical systems (MEMS) device, such as an ohmic MEMS switch or a capacitive MEMS switch. In an ohmic MEMS switch, the insulator layer may be used to reduce metal undercutting during fabrication, to prevent electrical shorting of a MEMS actuator to a MEMS cantilever, or both. In a capacitive MEMS switch, the insulator layer may be used as a capacitive dielectric between capacitive plates, which are provided by the two metal layers. A fixed capacitive element may be provided by the insulator layer between the two metal layers. In one embodiment of the present invention, an ohmic MEMS switch, a capacitive MEMS switch, a fixed capacitive element, or any combination thereof may be integrated into a single semiconductor die. | 08-25-2011 |
20110299432 | SUB-BAND DUPLEXER WITH ACTIVE FREQUENCY TUNING - Embodiments disclosed herein relate to programmable duplexers. The frequency pass band of the programmable duplexer is changed according to a selection of a channel-pair selection to control or maximize the transition band between the receiver path and the transmitter path. The programmable duplexer permits selections of desired pass bands without the need for multiple duplexer filters. As an additional advantage, the transmission band requirements become less sensitive to manufacturing tolerances and temperature variations. | 12-08-2011 |
20120175715 | ENCAPSULATED MICRO-ELECTROMECHANICAL SYSTEM SWITCH AND METHOD OF MANUFACTURING THE SAME - Encapsulated MEMS switches are disclosed along with methods of manufacturing the same. A non-polymer based sacrificial layer is used to form the actuation member of the MEMS switch while a polymer based sacrificial layer is used to form the enclosure that encapsulates the MEMS switch. The first non-polymer based sacrificial layer allows for highly reliable MEMS switches to be manufactured while also protecting the MEMS switch from carbon contamination. The polymer based sacrificial layer allows for the manufacture of more spatially efficient encapsulated MEMS switches. | 07-12-2012 |
20120193781 | CUSTOMIZED RF MEMS CAPACITOR ARRAY USING REDISTRIBUTION LAYER - Disclosed is a method for fabricating a customized micro-electromechanical systems (MEMS) integrated circuit using at least one redistribution layer. The method includes steps of providing a substrate on which MEMS components are fabricated and coupling predetermined ones of the MEMS components via the redistribution traces. | 08-02-2012 |
20120218047 | VERTICAL BALLAST TECHNOLOGY FOR POWER HBT DEVICE - Power amplification devices are disclosed having a vertical ballast configuration to prevent thermal runaway in at least one stack of bipolar transistors formed on a semiconductor substrate. To provide a negative feedback to prevent thermal runaway in the bipolar transistors, a conductive layer is formed over and coupled to the stack. A resistivity of the conductive layer provides an effective resistance that prevents thermal runaway in the bipolar transistors. The vertical placement of the conductive layer allows for vertical heat dissipation and thus provides ballasting without concentrating heat. | 08-30-2012 |
20130140678 | INSULATOR LAYER BASED MEMS DEVICES - The present invention relates to using an insulator layer between two metal layers of a semiconductor die to provide a micro-electromechanical systems (MEMS) device, such as an ohmic MEMS switch or a capacitive MEMS switch. In an ohmic MEMS switch, the insulator layer may be used to reduce metal undercutting during fabrication, to prevent electrical shorting of a MEMS actuator to a MEMS cantilever, or both. In a capacitive MEMS switch, the insulator layer may be used as a capacitive dielectric between capacitive plates, which are provided by the two metal layers. A fixed capacitive element may be provided by the insulator layer between the two metal layers. In one embodiment of the present invention, an ohmic MEMS switch, a capacitive MEMS switch, a fixed capacitive element, or any combination thereof may be integrated into a single semiconductor die. | 06-06-2013 |
20130207714 | SHUNT SWITCH AT COMMON PORT TO REDUCE HOT SWITCHING - Pilot switch circuitry grounds a hot node (an injection node) of a microelectromechanical system (MEMS) switch to reduce or eliminate arcing between a cantilever contact and a terminal contact when the MEMS switch is opened or closed. The pilot switch circuitry grounds the hot node prior to, during, and after the cantilever contact and terminal contact of the MEMS come into contact with one another (when the MEMS switch is closed). Additionally, the pilot switch circuitry grounds the hot node prior to, during, and after the cantilever contact and terminal contact of the MEMS disengage from one another (when the MEMS switch is opened). | 08-15-2013 |
20130314163 | INTEGRATED STACKED POWER AMPLIFIER AND RF SWITCH ARCHITECTURE - Combination circuitry includes a relatively small preamplifier and includes hybrid circuitry. The hybrid circuitry is configured to perform mode switching while also performing some amplification, thus allowing the relatively small preamplifier to be smaller than a conventional power amplifier. In one embodiment, the hybrid circuitry includes first series portion configured to amplify when ON, a first shunt portion, a second series portion configured to amplify when ON, and a second shunt portion. The first series portion may include: a first transistor; a first variable impedance in communication with a gate of the first transistor, wherein the first variable impedance is configured to receive a first transistor control signal; a second transistor in series with the first transistor; and a second variable impedance in communication with a gate of the second transistor, wherein second variable impedance is configured to receive a second transistor control signal. | 11-28-2013 |
20140242760 | SEMICONDUCTOR RADIO FREQUENCY SWITCH WITH BODY CONTACT - The present disclosure relates to a radio frequency (RF) switch that includes multiple body-contacted field effect transistor (FET) elements coupled in series. The FET elements may be formed using a thin-film semiconductor device layer, which is part of a thin-film semiconductor die. Conduction paths between the FET elements through the thin-film semiconductor device layer and through a substrate of the thin-film semiconductor die may be substantially eliminated by using insulating materials. Elimination of the conduction paths allows an RF signal across the RF switch to be divided across the series coupled FET elements, such that each FET element is subjected to only a portion of the RF signal. Further, each FET element is body-contacted and may receive reverse body biasing when the RF switch is in an OFF state, thereby reducing an OFF state drain-to-source capacitance of each FET element. | 08-28-2014 |
20140252566 | SILICON-ON-DUAL PLASTIC (SODP) TECHNOLOGY AND METHODS OF MANUFACTURING THE SAME - A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure having a first surface and a second surface. A first polymer having a high thermal conductivity and a high electrical resistivity is disposed on the first surface of the semiconductor stack structure. An exemplary method includes providing the semiconductor stack structure with the second surface in direct contact with a wafer handle. A next step involves removing the wafer handle to expose the second surface of the semiconductor stack structure. A following step includes disposing a second polymer having high thermal conductivity and high electrical resistivity directly onto the second surface of the semiconductor stack structure. Additional methods apply silicon nitride layers on the first surface and second surface of the semiconductor stack structure before disposing the first polymer and second polymer to realize the semiconductor device. | 09-11-2014 |
20140252567 | PATTERNED SILICON-ON-PLASTIC (SOP) TECHNOLOGY AND METHODS OF MANUFACTURING THE SAME - A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure attached to a wafer handle having at least one aperture that extends through the wafer handle to an exposed portion of the semiconductor stack structure. A thermally conductive and electrically resistive polymer substantially fills the at least one aperture and contacts the exposed portion of the semiconductor stack structure. One method for manufacturing the semiconductor device includes forming patterned apertures in the wafer handle to expose a portion of the semiconductor stack structure. The patterned apertures may or may not be aligned with sections of RF circuitry making up the semiconductor stack structure. A following step includes contacting the exposed portion of the semiconductor stack structure with a polymer and substantially filling the patterned apertures with the polymer, wherein the polymer is thermally conductive and electrically resistive. | 09-11-2014 |
20140306324 | SEMICONDUCTOR DEVICE WITH A POLYMER SUBSTRATE AND METHODS OF MANUFACTURING THE SAME - A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure having a first surface and a second surface. A polymer substrate having a high thermal conductivity and a high electrical resistivity is disposed onto the first surface of the semiconductor stack structure. One method includes providing the semiconductor stack structure with the first surface in direct contact with a wafer handle. A next step involves removing the wafer handle to expose the first surface of the semiconductor stack structure. A following step includes disposing a polymer substrate having high thermal conductivity and high electrical resistivity directly onto the first surface of the semiconductor stack structure. | 10-16-2014 |