Patent application number | Description | Published |
20130015530 | METHOD OF FORMING POLYSILICON RESISTOR DURING REPLACEMENT METAL GATE PROCESS AND SEMICONDUCTOR DEVICE HAVING SAMEAANM KIM; JU YOUNAACI Suwon-siAACO KRAAGP KIM; JU YOUN Suwon-si KRAANM Kim; JedonAACI SeoulAACO KRAAGP Kim; Jedon Seoul KR - A method for manufacturing a semiconductor device, comprising forming a first gate stack portion on a substrate, the first gate stack portion including a first gate oxide layer and a first polysilicon layer on the first gate oxide layer, forming a second gate stack portion on the substrate, the second gate stack portion including a second gate oxide layer and a second polysilicon layer on the second gate oxide layer, forming a resistor portion on the substrate, the resistor portion including a third gate oxide layer and a third polysilicon layer on the third gate oxide layer, covering the resistor portion with a photoresist, removing respective first portions of the first and second polysilicon layers from the first and second gate stack portions, removing the photoresist from the resistor portion, and after removing the photoresist from the resistor portion, removing respective remaining portions of the first and second polysilicon layers from the first and second gate stack portions. | 01-17-2013 |
20130015531 | METHOD OF FORMING POLYSILICON RESISTOR DURING REPLACEMENT METAL GATE PROCESS AND SEMICONDUCTOR DEVICE HAVING SAMEAANM Kim; Ju YounAACI Suwon-siAACO KRAAGP Kim; Ju Youn Suwon-si KRAANM Kim; JedonAACI SeoulAACO KRAAGP Kim; Jedon Seoul KR - A method for manufacturing a semiconductor device, comprising forming a first gate stack portion on a surface of a substrate, the first gate stack portion including a first gate oxide layer and a first polysilicon layer on the first gate oxide layer, forming a second gate stack portion on the surface of the substrate, the second gate stack portion including a second gate oxide layer and a second polysilicon layer on the second gate oxide layer, forming a resistor portion in a recessed portion of the substrate below the surface of the substrate, the resistor portion including a third polysilicon layer, and removing the first and second polysilicon layers from the first and second gate stack portions to expose the first and second gate oxide layers, wherein at least one of a dielectric layer and a stress liner cover a top surface of the resistor portion during removal of the first and second polysilicon layers. | 01-17-2013 |
20130015532 | METHODS OF MANUFACTURING GATES FOR PREVENTING SHORTS BETWEEN THE GATES AND SELF-ALIGNED CONTACTS AND SEMICONDUCTOR DEVICES HAVING THE SAMEAANM Kim; Ju YounAACI Suwon-siAACO KRAAGP Kim; Ju Youn Suwon-si KRAANM Kim; JedonAACI SeoulAACO KRAAGP Kim; Jedon Seoul KR - A method for manufacturing a semiconductor device, comprising forming a metal gate of a transistor on a substrate by a replacement metal gate process, wherein an insulating layer is formed on the substrate adjacent the metal gate, forming a hard mask on the substrate including the insulating layer and the metal gate, the hard mask including an opening exposing the metal gate, performing a metal pull back process on the substrate to remove a predetermined depth of a top portion of the metal gate, depositing a protective layer on the substrate, including on the hard mask and on top of a remaining portion of the metal gate, and performing chemical mechanical polishing to remove the hard mask and the protective layer, wherein the protective layer formed on top of the remaining portion of the metal gate remains. | 01-17-2013 |
20130295758 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device comprises forming an interlayer insulating film on a semiconductor substrate, the interlayer insulating film including a trench, forming a work function metal layer in the trench, forming an insulating film on the work function metal layer, forming a sacrificial film on the insulating film and filling the trench, forming a sacrificial film pattern with a top surface disposed in the trench by etching the sacrificial film, forming an insulating film pattern by selectively etching a portion of the insulating film which is formed higher than the sacrificial film pattern, and forming a work function metal pattern with a top surface disposed in the trench by selectively etching a portion of the work function metal layer which is formed higher than the insulating film pattern. | 11-07-2013 |
20130299912 | SEMICONDUCTOR DEVICE HAVING HIGH-K GATE INSULATION FILMS AND FABRICATING METHOD THEREOF - A semiconductor device having high-k gate insulation films and a method of fabricating the semiconductor device are provided. The semiconductor device includes a first gate insulation film on a substrate and the first gate insulation film includes a material selected from the group consisting of HfO | 11-14-2013 |
20130299918 | Semiconductor Device and Fabricating Method Thereof - A semiconductor device includes an interlayer insulating film formed on a substrate and including a trench, a gate insulating film formed in the trench, a work function adjusting film formed on the gate insulating film in the trench along sidewalls and a bottom surface of the trench, and including an inclined surface having an acute angle with respect to the sidewalls of the trench, and a metal gate pattern formed on the work function adjusting film in the trench to fill up the trench. | 11-14-2013 |
20140001543 | Integrated circuit device with metal gates including diffusion barrier layers and fabricating methods thereof | 01-02-2014 |
20140061809 | SEMICONDUCTOR DEVICE - There is provided a semiconductor device comprising, at least one SRAM cell, wherein the SRAM cell includes a pull-up transistor, a pull-down transistor, and a pass-gate transistor, and an inversion-layer thickness (Tinv) of a gate stack of the pass-gate transistor is different from Tinv of a gate stack of the pull-up transistor and Tinv of a gate stack of the pull-down transistor. | 03-06-2014 |
20140061813 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a semiconductor substrate including a first region and a second region, a first high-k dielectric film pattern on the first region, a second high-k dielectric film pattern on the second region and having the same thickness as the first high-k dielectric film pattern. First and second work function control film patterns are positioned on the high-k dielectric film patterns of the first region. Third and fourth work function control patterns are positioned on the high-k dielectric film pattern of the second region, the first work function control pattern being thicker than the third work function control pattern and the fourth work function control pattern being thicker than the second. | 03-06-2014 |
20140061814 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device comprises: a semiconductor substrate comprising a first region and a second region; and first and second transistors on the first and second regions, respectively, wherein the first transistor comprises a first gate insulating layer pattern, the second transistor comprises a second gate insulating layer pattern, the first and second transistors both comprise a work function adjustment film pattern and a gate metal pattern, wherein the work function adjustment film pattern of the first transistor comprises the same material as the work function adjustment film pattern of the second transistor and the gate metal pattern of the first transistor comprises the same material as gate metal pattern of the second transistor, and a concentration of a metal contained in the first gate insulating layer pattern to adjust a threshold voltage of the first transistor is different from a concentration of the metal contained in the second gate insulating layer pattern to adjust a threshold voltage of the second transistor. | 03-06-2014 |
20140065809 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A method of fabricating a semiconductor device includes forming a first gate pattern and a dummy gate pattern on a first active area and a second active area of a substrate, respectively, the first gate pattern including a first gate insulating layer and a silicon gate electrode, removing the dummy gate pattern to expose a surface of the substrate in the second active area, forming a second gate pattern including a second gate insulating layer and a metal gate electrode on the exposed surface of the substrate, the first gate insulating layer having a thickness larger than a thickness of the second gate insulating layer, and forming a gate silicide on the silicon gate electrode after forming the second gate pattern. | 03-06-2014 |
20140103403 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device is provided. The method includes forming an insulation film including a trench on a substrate, forming a first metal gate film pattern along side and bottom surfaces of the trench, forming a second metal gate film on the first metal gate film pattern and the insulation film, and forming a second metal gate film pattern positioned on the first metal gate film pattern by removing the second metal gate film to expose at least a portion of the insulation film and forming a blocking layer pattern on the second metal gate film pattern by oxidizing an exposed surface of the second metal gate film pattern. | 04-17-2014 |
20140103441 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device includes an interlayer insulating film formed on a substrate, the insulating layer including a trench. A gate insulating layer is formed on a bottom surface of the trench and a reaction prevention layer is formed on the gate insulating layer on the bottom surface of the trench. A replacement metal gate structure is formed on the reaction prevention layer of the trench to fill the trench. | 04-17-2014 |
20140167177 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME - A semiconductor device includes a channel layer over an active region, first and second field regions adjacent the active region, and a gate structure over the channel layer and portions of the first and second field regions. The first and second field regions include grooves adjacent respective sidewalls of the channel layer, and bottom surfaces of the grooves are below a bottom surface of the channel layer. | 06-19-2014 |
20140239405 | SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF - A semiconductor device using a high-k dielectric film is provided. The semiconductor device comprises a first gate insulating layer on a substrate and a first barrier layer on the first gate insulating layer, the first barrier layer having a first thickness. A first work function control layer is on the first barrier layer. A second barrier layer is present on the first work function control layer, the second barrier layer having a second thickness that is less than the first thickness. | 08-28-2014 |
20140299939 | Semiconductor Device - Provided are a semiconductor device and a fabricating method of the semiconductor device. The semiconductor device may include an interlayer dielectric film formed on a substrate and including a trench, a gate insulating film formed in the trench, a first work function control film formed on the gate insulating film of the trench along bottom and sidewalls of the trench, a first metal gate pattern formed on the first work function control film of the trench and filling a portion of the trench, and a second metal gate pattern formed on the first metal gate pattern of the trench, the second metal gate pattern different from the first metal gate pattern. | 10-09-2014 |
20140306295 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a substrate including a first region and a second region. The semiconductor device also includes first and second gate laminated bodies respectively formed on the first region and the second region, wherein the first gate laminated body includes a first gate insulating film that is in contact with the substrate and that includes a first high-k dielectric film; a first lower laminated body on the first gate insulating film; and a first upper laminated body on the first lower laminated body. The first lower laminated body includes a titanium nitride film, an aluminum film, and a titanium nitride film, laminated in sequence; and the second gate laminated body includes a second gate insulating film in contact with the substrate and including a second high-k dielectric film. Additionally, a second laminated body is formed on the second gate insulating film. | 10-16-2014 |
20140312387 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a base layer of a group III-V compound, a channel layer disposed on the base layer and including a group IV element, a nitride layer disposed on the channel layer, a gate insulation layer disposed on the nitride layer and a gate electrode disposed on the gate insulation layer. The concentration of nitrogen atoms existing at a first interface between the nitride layer and the gate insulation layer is higher than that existing at a second interface between the nitride layer and the channel layer. | 10-23-2014 |
20140353719 | Semiconductor Devices and Fabricating Methods Thereof - Provided are semiconductor devices and fabricating methods thereof. The semiconductor device includes a field insulating layer formed in a substrate, an interlayer dielectric layer formed on the field insulating layer and including a trench exposing at least a portion of the field insulating layer, a deposition insulating layer formed in the trench to be disposed on the field insulating layer, a gate insulating layer formed the trench to be disposed on the deposition insulating layer, and a metal gate formed the trench on the gate insulating layer. | 12-04-2014 |
20140370672 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - In a method for fabricating a semiconductor device, a first gate electrode and a second gate electrode are provided on a substrate, the first gate electrode and the second gate electrode being formed in a first region and a second region of the substrate, respectively. A conductive buffer layer is formed along sidewalls of the first gate electrode and the second gate electrode and on upper surfaces of the first gate electrode and second gate electrode. A first mask pattern covering the first region of the substrate on the buffer layer is formed. A first impurity region is formed in the substrate at sides of the second gate electrode using the first mask pattern as a mask of an ion implantation process. | 12-18-2014 |
20140370699 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device includes forming an interlayer insulating layer on a substrate, the interlayer insulating layer including a first trench and a second trench, forming a first conductive layer along sidewall surfaces and bottom surface of the first trench and forming a second conductive layer along sidewall surfaces and bottom surface of the second trench, forming a mask pattern on the second conductive layer, the mask pattern filling the second trench and being a bottom anti-reflective coating (BARC), and removing the first conductive layer using the mask pattern. | 12-18-2014 |
20150014780 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region. | 01-15-2015 |
Patent application number | Description | Published |
20140168124 | METHOD AND APPARATUS FOR CONTROLLING HAPTIC FEEDBACK OF AN INPUT TOOL FOR A MOBILE TERMINAL - An apparatus and method are provided for controlling haptic feedback of an input tool for a mobile terminal. The method includes detecting, by the mobile terminal, a hovering of the input tool over an object displayed on a touch screen display of the mobile terminal; identifying a property of the object; and transmitting, to the input tool, a control signal for haptic feedback corresponding to the property of the object. | 06-19-2014 |
20140198068 | METHOD FOR PROVIDING HAPTIC EFFECT IN PORTABLE TERMINAL, MACHINE-READABLE STORAGE MEDIUM, AND PORTABLE TERMINAL - A portable terminal and a method for providing a haptic effect in the portable terminal are provided. The method includes displaying an application on a touch screen, detecting a touch in a haptic providing region set by a user, and providing a haptic effect corresponding to the haptic providing region in response to the detected touch. | 07-17-2014 |
20140198069 | PORTABLE TERMINAL AND METHOD FOR PROVIDING HAPTIC EFFECT TO INPUT UNIT - A portable terminal and a method for providing a haptic effect to an input unit are provided. The method includes displaying at least one object on a touch screen, detecting a touch input by the input unit with respect to the object displayed on the touch screen, determining a preset mode based on the detected touch input of the input unit, and transmitting a control signal corresponding to a predetermined haptic pattern based on the preset mode to the input unit. | 07-17-2014 |
20140210756 | MOBILE TERMINAL AND METHOD FOR CONTROLLING HAPTIC FEEDBACK - Methods and a mobile terminal for providing visual and haptic feedback are provided. At least one first touch made to an object displayed on a touch screen is detected. The object is transformed and displayed in response to movement of the first touch. At least one second touch made to the displayed object is detected. Visual feedback is displayed on the touch screen in response to the second touch, and haptic feedback corresponding to a predetermined haptic pattern is output using a vibration motor. | 07-31-2014 |
20140210758 | MOBILE TERMINAL FOR GENERATING HAPTIC PATTERN AND METHOD THEREFOR - Provided are a portable terminal that generates a haptic pattern and a method thereof. The method includes displaying a menu on a touch screen, receiving an input for generating a haptic pattern through the displayed menu, detecting, using a sensor module, a haptic input provided through the portable terminal, and generating the haptic pattern based on the provided haptic input. | 07-31-2014 |
20140245139 | APPARATUS AND METHOD FOR PROVIDING HAPTIC FEEDBACK TO INPUT UNIT - Methods and apparatus for providing feedback in a portable apparatus are provided. An object is displayed on a touch screen of the portable apparatus. A first touch, from an input unit, is detected at a position on the touch screen corresponding to the displayed object. The object is selected in response to the first touch. A copy command by which the selected object is copied to a copy target is received from the input unit. A first control command corresponding to haptic feedback determined in response to the received copy command is transmitted from the portable apparatus to the input unit. | 08-28-2014 |
20140285453 | PORTABLE TERMINAL AND METHOD FOR PROVIDING HAPTIC EFFECT - Methods and apparatus are provided for providing a haptic effect by a portable terminal and an input device. A writing application is displayed on a touch screen of the portable terminal. A selection for a type of pen used for writing in the displayed writing application and a selection for a background material on which the writing is performed are received using the selected type of pen. A haptic pattern of the selected type of pen and a haptic pattern of the background material are combined. Haptic feedback is output based on a combined haptic pattern of the selected type of pen and the background material. A control signal having the haptic feedback is received at the input unit that controls a vibration of a vibration device of the input unit. The received control signal is analyzed to control the vibration of the vibration device. | 09-25-2014 |
20140287728 | METHOD AND APPARATUS FOR PROVIDING STATE INFORMATION - Methods and apparatus are provided for providing state information of a digital apparatus. State information for a user of the digital apparatus is determined based on the user's intention to perform communication. The state information is transmitted to a server. A display request for a contact list is received. A screen having a plurality of user items is displayed. Each of the plurality of user items corresponds to a respective one of a plurality of users in the contact list. At least one of the plurality of user items includes identification information of a user corresponding to the at least one of the plurality of user items, state information of the corresponding user that is received from the server, and at least one category indicator representing at least one recommended communication service category determined based on the state information of the corresponding user. | 09-25-2014 |
20140310337 | TERMINAL APPARATUS, SERVER AND METHOD OF CONTROLLING THE SAME - A terminal apparatus provides shared profile information that is selectively received from a server based on a relationship between a first user and a second user, according to whether information of the second user is stored in the terminal apparatus of the first user as local profile information and information of the first user is stored in the terminal apparatus of the second user as the local profile information. Accordingly, a phonebook service for desired profile information is provided only for users in a buddy relationship sharing contact information with each other. | 10-16-2014 |
20140359493 | METHOD, STORAGE MEDIUM, AND ELECTRONIC DEVICE FOR MIRRORING SCREEN DATA - An electronic device and method of mirroring screen data is disclosed. The method includes communicatively coupling with an external display device, mirroring screen data displayed on a display of the electronic device by transmitting the screen data to the external display device for display, and in response to detection of a preset event, removing a subset of the screen data associated with the preset event, so that the subset is not displayed on the external display device. | 12-04-2014 |