| Patent application number | Description | Published |
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| 20130209875 | ELECTRODE BINDER COMPOSITION, ELECTRODE SLURRY, ELECTRODE, AND ELECTRICAL STORAGE DEVICE - An electrode binder composition is used to produce an electrode used for an electrical storage device, and includes (A) a polymer, (B) a compound represented by the following general formula (1), and (C) a liquid medium, the polymer (A) being fluorine-containing polymer particles or diene polymer particles, and a concentration of the compound (B) in the electrode binder composition being 5 to 500 ppm. | 08-15-2013 |
| 20130216948 | RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN-FORMING METHOD - A radiation-sensitive resin composition for forming a resist film includes a polymer including a first structural unit represented by a formula (1) and a second structural unit represented by a formula (2). The first structural unit and the second structural unit are included in an identical polymer molecule or different polymer molecules. R | 08-22-2013 |
| 20130216951 | RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND COMPOUND - A radiation-sensitive resin composition includes a polymer, an acid generating agent, and an organic solvent. The polymer includes a first structural unit derived from a compound represented by a formula (1), and a second structural unit derived from a compound represented by a formula (2). R | 08-22-2013 |
| 20130216961 | COMPOSITION FOR FORMING UPPER LAYER FILM FOR IMMERSION EXPOSURE, UPPER LAYER FILM FOR IMMERSION EXPOSURE, AND METHOD OF FORMING PHOTORESIST PATTERN - A composition for forming an upper layer film includes a solvent and a resin component including a first resin having a first repeating unit and a second repeating unit. The first repeating unit is a repeating unit represented by a formula (1-1), a repeating unit represented by a formula (1-2), a repeating unit represented by a formula (1-3), or a combination thereof. The second repeating unit is a repeating unit represented by a formula (2-1), a repeating unit represented by a formula (2-2), or both thereof. The composition is to be used for forming the upper layer film in liquid immersion lithography. | 08-22-2013 |
| 20130217850 | COMPOSITION FOR FORMING LIQUID IMMERSION UPPER LAYER FILM, AND POLYMER - An immersion upper layer film-forming composition includes [A] a polymer component that includes a polymer (A1), and [B] a solvent, the polymer (A1) including a structural unit (I) that includes a group represented by the following formula (i). The structural unit (I) is preferably a structural unit (I-1) represented by the following formula (1). The polymer component [A] preferably further includes a structural unit (II-1) represented by the following formula (2), the structural unit (II-1) being included in the polymer (A1) or a polymer other than the polymer (A1). The polymer component [A] preferably further includes a structural unit (III) that includes a carboxyl group, the structural unit (III) being included in the polymer (A1) or a polymer other than the polymer (A1). | 08-22-2013 |
| 20130220930 | CLEANING METHOD OF IMMERSION LIQUID, IMMERSION LIQUID CLEANING COMPOSITION, AND SUBSTRATE - A cleaning method of an immersion liquid includes supplying an immersion liquid on a surface of a cleaning substrate. The immersion liquid is to be used in a liquid immersion lithography apparatus. The cleaning substrate has a substrate and an organic film laminated on a top face side of the substrate. The immersion liquid is allowed to move on the substrate to remove contaminants from the immersion liquid. | 08-29-2013 |
| 20130224661 | PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION - A pattern-forming method includes coating a radiation-sensitive resin composition on a substrate to provide a resist film. The resist film is exposed. The exposed resist film is developed. A developer solution used in developing the exposed resist film includes no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a first polymer and a radiation-sensitive acid generator. The first polymer includes a first structural unit having an acid-labile group and an alicyclic group. The alicyclic group is capable of avoiding dissociation from a molecular chain by an action of an acid. | 08-29-2013 |
| 20130224666 | RESIST PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION - A resist pattern-forming method includes coating a radiation-sensitive resin composition on a substrate to provide a resist film. The resist film is exposed. The exposed resist film is developed using a developer solution including no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a polymer and a radiation-sensitive acid generator. The polymer has a weight average molecular weight in terms of the polystyrene equivalent of greater than 6,000 and includes a first structural unit that includes an acid-labile group. The polymer includes less than 5 mol % or 0 mol % of a second structural unit that includes a hydroxyl group. | 08-29-2013 |
| 20130273476 | PATTERN-FORMING METHOD, RESIST UNDERLAYER FILM, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM - A pattern-forming method includes: (1) a resist underlayer film-forming step of providing a resist underlayer film on an upper face side of a substrate by coating a resist underlayer film-forming composition containing a resin having a phenolic hydroxyl group; (2) a resist pattern-forming step of forming a resist pattern on an upper face side of the resist underlayer film; (3) a pattern-forming step of dry etching at least the resist underlayer film and the substrate, with the aid of the resist pattern as a mask to form a pattern on the substrate; and (4) a resist underlayer film-removing step of removing the resist underlayer film on the substrate with a basic solution, in the order of (1) to (4). | 10-17-2013 |
| 20130299946 | SUBSTRATE TREATING METHOD, STACK AND SEMICONDUCTOR DEVICE - A method that includes, in the sequence set forth, (1) temporarily fixing a substrate onto a support via a temporary fixing material including a central section (A) having two or more layers and a peripheral section (B) with solvent resistance, section (B) being in contact with a peripheral portion of the support on the substrate side and with a peripheral portion of the substrate on the support side, section (A) being in contact with a central portion of the support on the substrate side and with a central portion of the substrate on the support side, the temporary fixing thus resulting in a stack in which section (A) is covered with the support, section (B) and the substrate; (2) processing the substrate and/or transporting the stack; (3) dissolving section (B) with a solvent; and (4) heating the residue of the temporary fixing material and separating the substrate from the support. | 11-14-2013 |
| 20150048046 | METHOD FOR FORMING PATTERN, AND POLYSILOXANE COMPOSITION - A pattern-forming method in which processibility of a silicon-containing film in etching with a fluorine gas and resistance against etching with an oxygen gas can be together improved in a multilayer resist process to form a finer pattern. Provided is a pattern-forming method that includes the steps of (1) providing a silicon-containing film on the upper face side of a substrate to be processed using a polysiloxane composition; (2) forming a resist pattern on the silicon-containing film; (3) dry-etching the silicon-containing film using the resist pattern as a mask to form a silicon-containing pattern; and (4) dry-etching the substrate to be processed using the silicon-containing pattern as a mask to form a pattern, in which the polysiloxane composition includes (A) a polysiloxane containing a fluorine atom, and (B) a crosslinking accelerator. | 02-19-2015 |
