Patent application number | Description | Published |
20140090598 | ISOTOPICALLY-ENRICHED BORON-CONTAINING COMPOUNDS, AND METHODS OF MAKING AND USING SAME - An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B | 04-03-2014 |
20140301932 | B2F4 MANUFACTURING PROCESS - A reaction system and method for preparing compounds or intermediates from solid reactant materials is provided. In a specific aspect, a reaction system and methods are provided for preparation of boron-containing precursor compounds useful as precursors for ion implantation of boron in substrates. In another specific aspect, a reactor system and methods are provided for manufacture of boron precursors such as B | 10-09-2014 |
20140322903 | ENRICHED SILICON PRECURSOR COMPOSITIONS AND APPARATUS AND PROCESSES FOR UTILIZING SAME - Isotopically enriched silicon precursor compositions are disclosed, as useful in ion implantation to enhance performance of the ion implantation system, in relation to corresponding ion implantation lacking such isotopic enrichment of the silicon precursor composition. The silicon dopant composition includes at least one silicon compound that is isotopically enriched above natural abundance in at least one of | 10-30-2014 |
20140326896 | METHOD AND APPARATUS FOR ENHANCED LIFETIME AND PERFORMANCE OF ION SOURCE IN AN ION IMPLANTATION SYSTEM - An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement. | 11-06-2014 |
20140342538 | ION IMPLANTATION SYSTEM AND METHOD - An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B | 11-20-2014 |
20150228486 | METHOD AND APPARATUS FOR ENHANCED LIFETIME AND PERFORMANCE OF ION SOURCE IN AN ION IMPLANTATION SYSTEM - An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement. | 08-13-2015 |
20150247605 | ANTI-SPIKE PRESSURE MANAGEMENT OF PRESSURE-REGULATED FLUID STORAGE AND DELIVERY VESSELS - A fluid supply package comprising a pressure-regulated fluid storage and dispensing vessel, a valve head adapted for dispensing of fluid from the vessel, and an anti-pressure spike assembly adapted to combat pressure spiking in flow of fluid at inception of fluid dispensing. | 09-03-2015 |
20150308626 | ENDPOINT DETERMINATION FOR CAPILLARY-ASSISTED FLOW CONTROL - Apparatus and method for determining endpoint of a fluid supply vessel in which fluid flow is controlled through a flow passage disposed in an interior volume of the fluid supply vessel with a static flow restricting device and a selectively actuatable valve element upon establishing fluid flow. The endpoint determination can be employed to terminate fluid supply from the fluid supply vessel and/or to switch from a fluid-depleted supply vessel to a fresh vessel for continuity or renewal of fluid supply operation. The apparatus and method are suitable for use with fluid-utilizing apparatus such as ion implanters. | 10-29-2015 |