Patent application number | Description | Published |
20110255044 | DISPLAY DEVICE AND FABRICATION METHOD OF THE SAME - The embodiment relates to a display device having an improved aperture ratio and capacitance, and a fabrication method of the display device, in which the display device may include a thin film transistor, which includes: an active layer, a gate electrode, a source electrode electrically connected to the active layer, a drain electrode electrically connected to the active layer, and a gate insulating material formed between the active layer and the gate electrode, where the gate insulating material includes a first layer, a second layer and a third layer, where the second layer has a thickness between about 0.1 to about 1.5 times a thickness of the first layer, and where the third layer has a thickness between about 2 to about 12 times the thickness of the second layer. | 10-20-2011 |
20110309362 | Flat panel display apparatus and method of manufacturing the same - A flat panel display apparatus including a gate electrode on a substrate, a first insulating layer and a semiconductor layer sequentially stacked on the gate electrode and including a transparent conductive oxide, a capacitor first electrode extending on a plane on which the gate electrode extends, and a capacitor second electrode extending on a plane on which the semiconductor layer extends and including a material of the semiconductor layer, wherein the first insulating layer is between the capacitor second electrode and the semiconductor layer, source and drain electrodes that are separated by a second insulating layer and are connected to the semiconductor layer and the capacitor second electrode, a third insulating layer covering the source and drain electrodes, and a pixel electrode electrically connected to the source or drain electrode on the third insulating layer and being electrically connected to one of the source electrode and/or the drain electrode. | 12-22-2011 |
20120097940 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A display device according to an exemplary embodiment includes: gate wires, at least one of the gate wires having a first multi-layered structure including a first transparent conductive layer formed on the substrate and a first metal layer formed on the first transparent conductive layer and at least another one of the gate wires having a first single-layered structure formed with the first transparent conductive layer; a semiconductor layer formed on a part of the gate wires; and data wires with at least one of the data wires having a second multi-layered structure including a second transparent conductive layer formed on the semiconductor layer and a second metal layer formed on the second transparent conductive layer and at least another one of the data wires having a second single-layered structure formed with the second transparent conductive layer. | 04-26-2012 |
20120119206 | Oxide Semiconductor Thin Film Transistor, and Method of Manufacturing the Same - An oxide semiconductor thin film transistor includes a gate electrode on a substrate, the gate electrode having a first area, a gate insulation layer on the gate electrode, the gate insulation layer covering the gate electrode, an active layer on the gate insulation layer, the active layer having a second area that is smaller than the first area, a source electrode on the active layer, the source electrode contacting a source region of the active layer, a drain electrode on the active layer, the drain electrode contacting a drain region of the active layer, and a passivation layer covering the active layer, the source electrode, and the drain electrode. | 05-17-2012 |
20120169709 | Gate driving circuit and display device including the same - A gate driving circuit includes a pre-charge unit, a pull-up unit, a first capacitor, and a discharge unit. The pre-charge unit pre-charges a first node in response to a first input signal. The pull-up unit outputs a gate driving signal for driving a gate line to a first clock signal in response to a signal at the first node. The first capacitor is connected between the first node and a first voltage. The discharge unit discharges the first node in response to a second input signal and a second clock signal. | 07-05-2012 |
20120292610 | OXIDE SEMICONDUCTOR DEVICES, METHODS OF MANUFACTURING OXIDE SEMICONDUCTOR DEVICES, DISPLAY DEVICES HAVING OXIDE SEMICONDUCTOR DEVICES, METHODS OF MANUFACTURING DISPLAY DEVICES HAVING OXIDE SEMICONDUCTOR DEVICES - An oxide semiconductor device includes a gate electrode on a substrate, a gate insulation layer on the substrate, the gate insulation layer having a recess structure over the gate electrode, a source electrode on a first portion of the gate insulation layer, a drain electrode on a second portion of the gate insulation layer, and an active pattern on the source electrode and the drain electrode, the active pattern filling the recess structure. | 11-22-2012 |
20140139772 | DISPLAY DEVICE - In an aspect, a display device including: a substrate; a thin film transistor formed on the substrate, and comprising an active layer formed of an oxide semiconductor; a passivation layer formed on the thin film transistor; and a hydrogen blocking layer positioned between the active layer and the passivation layer is provided. | 05-22-2014 |
20140145179 | TFT, METHOD OF MANUFACTURING THE TFT, AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICE INCLUDING THE TFT - A method of manufacturing a thin film transistor (TFT), including forming an oxide semiconductor pattern including a first region, a second region and a third region on a substrate, directly plasma processing the first region and the second region of the oxide semiconductor pattern, forming an insulating layer on the substrate to cover the oxide semiconductor pattern, forming a gate electrode on the insulating layer to overlap the third region, and forming a source electrode and a drain electrode that are insulated from the gate electrode and that contact the first region, the second region being disposed between the first region and the third region. | 05-29-2014 |
20150034913 | ORGANIC LIGHT-EMITTING DIODE (OLED) DISPLAY - An organic light emitting-diode (OLED) display is disclosed. In one aspect, the OLED includes a first substrate, a first electrode provided on the first substrate, a pixel defining layer provided on the first electrode and including a first opening exposing at least a portion of the first electrode, and an organic emission layer provided on the first electrode corresponding to the first opening. The OLED display also includes a second electrode provided on the pixel defining layer and the organic emission layer, a second substrate provided on the second electrode, and a first auxiliary electrode provided below the second substrate facing the second electrode and welded to a portion of the second electrode corresponding to the pixel defining layer. | 02-05-2015 |
20150060783 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - Disclosed is an organic light-emitting display apparatus. The organic light-emitting display apparatus includes a pixel electrode that is connected to at least one thin film transistor, an opposite electrode that is disposed to face the pixel electrode, an organic light emitting layer that is disposed between the pixel electrode and the opposite electrode, and a pad electrode that includes a first pad layer, a second pad layer disposed on the first pad layer, and a third pad layer which is disposed between the first pad layer and the second pad layer and contains a material having a reducibility that is lower than a reducibility of a material contained in the second pad layer. | 03-05-2015 |