Patent application number | Description | Published |
20080259458 | EUV diffractive optical element for semiconductor wafer lithography and method for making same - According to one exemplary embodiment, an EUV (extreme ultraviolet) optical element in a light path between an EUV light source and a semiconductor wafer includes a reflective film having a number of bilayers. The reflective film includes a pattern, where the pattern causes a change in incident EUV light from the EUV light source, thereby controlling illumination at a pupil plane of an EUV projection optic to form a printed field on the semiconductor wafer. The EUV optical element can be utilized in an EUV lithographic process to fabricate a semiconductor die. | 10-23-2008 |
20080292991 | HIGH FIDELITY MULTIPLE RESIST PATTERNING - An integrated circuit fabrication process as described herein employs a double photoresist exposure technique. After creation of a first pattern of photoresist features on a wafer, a second photoresist layer is formed over the first pattern of photoresist features. The second photoresist layer is subjected to a reflow step that softens and relaxes the second photoresist material. This reflow step causes the exposed surface of the second photoresist layer to become substantially planar. Thereafter, the second photoresist layer can be exposed and developed to create a second pattern of photoresist features on the wafer. The planar surface of the second photoresist layer, which results from the reflow step, facilitates the creation of accurate, precise, and “high fidelity” photoresist features from the second photoresist material. | 11-27-2008 |
20090040483 | MULTIPLE EXPOSURE TECHNIQUE USING OPC TO CORRECT DISTORTION - Accurate ultrafine patterns are formed using a multiple exposure technique comprising implementing an OPC procedure to form an exposure reticle to compensate for distortion of an overlying resist pattern caused by an underlying resist pattern. Embodiments include forming a first resist pattern in a first resist layer over a target layer using a first exposure reticle, forming a second exposure reticle by an OPC technique to compensate for distortion of a second resist pattern caused by the underlying first resist pattern, depositing a second resist layer on the first resist pattern, forming the second resist pattern in the second resist layer using the second exposure reticle, the first and second resist patterns constituting a final resist mask, and forming a pattern in the target layer using the final resist mask. | 02-12-2009 |
20100099045 | METHODS FOR PERFORMING PHOTOLITHOGRAPHY USING BARCS HAVING GRADED OPTICAL PROPERTIES - Photolithography methods using BARCs having graded optical properties are provided. In an exemplary embodiment, a photolithography method comprises the steps of depositing a BARC overlying a material to be patterned, the BARC having a refractive index and an absorbance. The BARC is modified such that, after the step of modifying, values of the refractive index and the absorbance are graded from first values at a first surface of the BARC to second values at a second surface of the BARC. The step of modifying is performed after the step of depositing. | 04-22-2010 |
20100311242 | METHODS FOR FABRICATING SEMICONDUCTOR DEVICES - Methods are provided for fabricating a semiconductor device. One method comprises providing a first pattern having a first polygon, the first polygon having a first tonality and having a first side and a second side, the first side adjacent to a second polygon having a second tonality, and the second side adjacent to a third polygon having the second tonality, and forming a second pattern by reversing the tonality of the first pattern. The method further comprises forming a third pattern from the second pattern by converting the second polygon from the first tonality to the second tonality forming a fourth pattern from the second pattern by converting the third polygon from the first tonality to the second tonality forming a fifth pattern by reversing the tonality of the third pattern, and forming a sixth pattern by reversing the tonality of the fourth pattern. | 12-09-2010 |
20110079779 | SHAPE CHARACTERIZATION WITH ELLIPTIC FOURIER DESCRIPTOR FOR CONTACT OR ANY CLOSED STRUCTURES ON THE CHIP - Shapes and orientations of contacts or other closed contours on an integrated circuit are characterized by calculating Elliptic Fourier descriptors. The descriptors are then used for generating design rules for the integrated circuit and for assessing process capability for the manufacturing of the integrated circuit. Monte Carlo simulation can be performed in conjunction with the elliptic Fourier descriptors. | 04-07-2011 |
20120252199 | METHODS FOR FABRICATING A PHOTOLITHOGRAPHIC MASK AND FOR FABRICATING A SEMICONDUCTOR INTEGRATED CIRCUIT USING SUCH A MASK - Methods are provided for designing a photolithographic mask and for fabricating a semiconductor IC using such a mask. In accordance with one embodiment a method for fabricating a semiconductor IC includes determining a design target for a region within the IC. An initial mask geometry is determined for the region having a mask opening and a mask bias relative to the design target. A sub-resolution edge ring having a predetermined, fixed spacing to an edge of the mask opening is inserted into the mask geometry and a lithographic mask is generated. A material layer is applied overlying a semiconductor substrate upon which the IC is to be fabricated and a layer of photoresist is applied overlying the material layer. The layer of photoresist is exposed through the lithographic mask and is developed. A process step is then performed on the material layer using the layer of photoresist as a mask. | 10-04-2012 |
20130130161 | PHOTOMASK SETS FOR FABRICATING SEMICONDUCTOR DEVICES - Methods are provided for fabricating a semiconductor device. One method comprises providing a first pattern having a first polygon, the first polygon having a first tonality and having a first side and a second side, the first side adjacent to a second polygon having a second tonality, and the second side adjacent to a third polygon having the second tonality, and forming a second pattern by reversing the tonality of the first pattern. The method further comprises forming a third pattern from the second pattern by converting the second polygon from the first tonality to the second tonality forming a fourth pattern from the second pattern by converting the third polygon from the first tonality to the second tonality forming a fifth pattern by reversing the tonality of the third pattern, and forming a sixth pattern by reversing the tonality of the fourth pattern. | 05-23-2013 |
20130146982 | SEMICONDUCTOR DEVICE WITH TRANSISTOR LOCAL INTERCONNECTS - A semiconductor device is provided for implementing at least one logic element. The semiconductor device includes a semiconductor substrate with a first transistor and a second transistor formed on the semiconductor substrate. Each of the transistors includes a source, a drain, and a gate. A CA layer is electrically connected to at least one of the source or the drain of the first transistor. A CB layer is electrically connected to at least one of the gates of the transistors and the CA layer. | 06-13-2013 |
20130175583 | SEMICONDUCTOR DEVICES HAVING DIELECTRIC CAPS ON CONTACTS AND RELATED FABRICATION METHODS - Fabrication methods for semiconductor device structures are provided. One method for fabricating a semiconductor device structure involves forming a first layer of a first dielectric material overlying a doped region formed in a semiconductor substrate, forming a first conductive contact electrically connected to the doped region within the first layer, forming a dielectric cap on the first conductive contact, forming a second layer of a second dielectric material overlying the dielectric cap and a gate structure overlying the semiconductor substrate, and forming a second conductive contact electrically connected to the gate structure within the second layer. | 07-11-2013 |
20130181289 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate having a diffusion region. A transistor is formed within the diffusion region. A power rail is disposed outside the diffusion region. A contact layer is disposed above the substrate and below the power rail. A via is disposed between the contact layer and the power rail to electrically connect the contact layer to the power rail. The contact layer includes a first length disposed outside the diffusion region and a second length extending from the first length into the diffusion region and electrically connected to the transistor. | 07-18-2013 |
20130244427 | METHODS OF MAKING JOGGED LAYOUT ROUTINGS DOUBLE PATTERNING COMPLIANT - One illustrative method disclosed herein involves creating an overall target pattern that includes an odd-jogged feature with a crossover region that connects first and second line portions, wherein the crossover region has a first dimension in a first direction that is greater than a second dimension that is transverse to the first direction, decomposing the overall target pattern into a first sub-target pattern and a second sub-target pattern, wherein each of the sub-target patterns comprise a line portion and a first portion of the crossover region, and generating first and second sets of mask data corresponding to the first and second sub-target patterns, respectively. | 09-19-2013 |
20130275935 | PROVIDING TIMING-CLOSED FINFET DESIGNS FROM PLANAR DESIGNS - An approach for providing timing-closed FinFET designs from planar designs is disclosed. Embodiments include: receiving one or more planar cells associated with a planar design; generating an initial FinFET design corresponding to the planar design based on the planar cells and a FinFET model; and processing the initial FinFET design to provide a timing-closed FinFET design. Other embodiments include: determining a race condition associated with a path of the initial FinFET design based on a timing analysis of the initial FinFET design; and increasing delay associated with the path to resolve hold violations associated with the race condition, wherein the processing of the initial FinFET design is based on the delay increase. | 10-17-2013 |
20130292772 | LAYOUT DESIGNS WITH VIA ROUTING STRUCTURES - An approach for providing layout designs with via routing structures is disclosed. Embodiments include: providing a gate structure and a diffusion contact on a substrate; providing a gate contact on the gate structure; providing a metal routing structure that does not overlie a portion of the gate contact, the diffusion contact, or a combination thereof; and providing a via routing structure over the portion and under a part of the metal routing structure to couple the gate contact, the diffusion contact, or a combination thereof to the metal routing structure. | 11-07-2013 |
20130295756 | METHODS OF FORMING CONTACTS FOR SEMICONDUCTOR DEVICES USING A LOCAL INTERCONNECT PROCESSING SCHEME - One method disclosed herein includes forming a plurality of source/drain contacts that are conductively coupled to a source/drain region of a plurality of transistor devices, wherein at least one of the source/drain contacts is a local interconnect structure that spans the isolation region and is conductively coupled to a first source/drain region in a first active region and to a second source/drain region in a second active region, and forming a patterned mask layer that covers the first and second active regions and exposes at least a portion of the local interconnect structure positioned above an isolation region that separates the first and second active regions. The method further includes performing an etching process through the patterned mask layer to remove a portion of the local interconnect structure, thereby defining a recess positioned above a remaining portion of the local interconnect structure, and forming an insulating material in the recess. | 11-07-2013 |
20130298089 | METHOD FOR INCREASING THE ROBUSTNESS OF A DOUBLE PATTERNING ROUTER USED TO MANUFACTURE INTEGRATED CIRCUIT DEVICES - A method for increasing the robustness of a double patterning router used in the manufacture of integrated circuit devices that includes providing a set of original color rules defining an original color rule space, providing a set of integrated circuit designs defining a design space, providing a router processing engine, perturbing the original color rules to define a perturbed color rule space, applying the perturbed color rule space and the design space to the router processing engine to expose double pattern routing odd cycle decomposition errors, and feeding back the exposed decomposition errors to enhance router processing engine development by reconfiguring the router processing engine in accordance with the exposed decomposition errors. | 11-07-2013 |
20140035151 | INTEGRATED CIRCUITS AND METHODS FOR FABRICATING INTEGRATED CIRCUITS USING DOUBLE PATTERNING PROCESSES - Integrated circuits and methods for fabricating integrated circuits are provided. One method includes creating a master pattern layout including first and second adjacent cells. The first adjacent cell has a first border pin with a first routing line. The second adjacent cell has a second border pin with a second routing line. The first and second routing lines overlap to define an edge-edge stitch to couple the first and second border pins. The master pattern layout is decomposed into sub-patterns. | 02-06-2014 |
20140042641 | MIDDLE-OF-THE-LINE CONSTRUCTS USING DIFFUSION CONTACT STRUCTURES - An approach for providing MOL constructs using diffusion contact structures is disclosed. Embodiments include: providing a first diffusion region in a substrate; providing, via a first lithography process, a first diffusion contact structure; providing, via a second lithography process, a second diffusion contact structure; and coupling the first diffusion contact structure to the first diffusion region and the second diffusion contact structure. Embodiments include: providing a second diffusion region in the substrate; providing a diffusion gap region between the first and second diffusion regions; providing the diffusion contact structure over the diffusion gap region; and coupling, via the diffusion contact structure, the first and second diffusion regions. | 02-13-2014 |
20140068543 | METHOD TO ENHANCE DOUBLE PATTERNING ROUTING EFFICIENCY - A method for enabling jogging functionality in circuit designs utilizing DPT without the need for difficult to implement tools such as stitch-aware routing tools is disclosed. Embodiments include: displaying a user interface for generating an IC having a plurality of masks for a single layer; causing, at least in part, a presentation in the user interface of a cell placement of the IC that includes a filler cell; and designating a portion of the filler cell as a routing zone, the routing zone being configured such that routes placed in the routing zone are decomposable with other routes placed outside the filler cell. | 03-06-2014 |
20140077384 | BIT CELL WITH TRIPLE PATTERNED METAL LAYER STRUCTURES - An approach for providing bit cells with triple patterned metal layer structures is disclosed. Embodiments include: providing, via a first patterning process of a metal layer, a first structure that is a first one of a word line structure, a ground line structure, a power line structure, and a bit line structure; providing, via a second patterning process of the metal layer, a second structure that is different from the first structure and that is a second one of the word line structure, the ground line structure, the power line structure, and the bit line structure; and providing, via a third patterning process of the metal layer, a third structure that is different from the first structure and the second structure, and that is a third one of the word line structure, the ground line structure line, the power line structure, and the bit line structure. | 03-20-2014 |
20140097892 | DOUBLE PATTERNING COMPATIBLE COLORLESS M1 ROUTE - A method for enabling functionality in circuit designs utilizing colorless DPT M1 route placement that maintains high routing efficiency and guarantees M1 decomposability of a target pattern and the resulting circuit are disclosed. Embodiments include: determining a boundary abutting first and second cells in an IC; determining a side of a first edge pin in the first cell facing a side of a second edge pin in the second cell; determining a first vertical segment of at least a portion of the side of the first edge pin and a second vertical segment of at least a portion of the side of the second edge pin; designating an area between the first vertical segment and the boundary as a first portion of a routing zone; and designating an area between the second vertical segment and the boundary as a second portion of the routing zone. | 04-10-2014 |
20140131816 | CROSS-COUPLING-BASED DESIGN USING DIFFUSION CONTACT STRUCTURES - An approach for providing cross-coupling-based designs using diffusion contact structures is disclosed. Embodiments include providing first and second gate structures over a substrate; providing a gate cut region across the first gate structure, the second gate structure, or a combination thereof; providing a first gate contact over the first gate structure; providing a second gate contact over the second gate structure; and providing a diffusion contact structure coupling the first gate contact to the second gate contact, the diffusion contact structure having vertices within the gate cut region. | 05-15-2014 |
20140159164 | DOUBLE SIDEWALL IMAGE TRANSFER PROCESS - Methodology enabling a generation of fins having a variable fin pitch less than 40 nm, and the resulting device are disclosed. Embodiments include: forming a hardmask on a substrate; providing first and second mandrels on the hardmask; providing a first spacer on each side of each of the first and second mandrels; removing the first and second mandrels; providing, after removal of the first and second mandrels, a second spacer on each side of each of the first spacers; and removing the first spacers. | 06-12-2014 |
20140258960 | INTEGRATING OPTIMAL PLANAR AND THREE-DIMENSIONAL SEMICONDUCTOR DESIGN LAYOUTS - An approach and apparatus are provided for optimizing and combining different semiconductor technologies into a single graphic data system. Embodiments include generating a planar semiconductor layout design, generating a three-dimensional (e.g., FinFET) semiconductor layout design, and combining the planar design and the FinFET design in a common graphic data system. | 09-11-2014 |
20140264499 | SEMICONDUCTOR DEVICES HAVING DIELECTRIC CAPS ON CONTACTS AND RELATED FABRICATION METHODS - Semiconductor device structures are provided. An exemplary semiconductor device structure includes a substrate of a semiconductor material and a gate structure overlying the substrate. The semiconductor substrate further includes a doped region formed in the substrate proximate the gate structure and a first dielectric material overlying the doped region. The semiconductor substrate also includes a conductive contact formed in the first dielectric material, the conductive contact being electrically connected to the doped region, and a dielectric cap overlying the conductive contact. | 09-18-2014 |
20140273474 | INTERCONNECTION DESIGNS USING SIDEWALL IMAGE TRANSFER (SIT) - Methodology enabling a generation of an interconnection design utilizing an SIT process is disclosed. Embodiments include: providing a hardmask on a substrate; forming a mandrel layer on the hardmask including: first and second vertical portions extending along a vertical direction and separated by a horizontal distance; and a plurality of horizontal portions extending in a horizontal direction, wherein each of the horizontal portions is positioned between the first and second vertical portions and at a different position along the vertical direction; and forming a spacer layer on outer edges of the mandrel layer. | 09-18-2014 |
20140282345 | VIA INSERTION IN INTEGRATED CIRCUIT (IC) DESIGNS - A method and apparatus for insertion of a via improving a manufacturability of a resulting device while ensuring compliance with DRC rules are disclosed. Embodiments include: determining a layer of a substrate of an IC design having a first via and a plurality of routes, the plurality of routes extending horizontally on the substrate and placed on one of a plurality of equally spaced vertical positions; comparing a region of the layer extending vertically between a first set of the plurality of routes and extending horizontally between a second set of the plurality of the routes with one or more threshold values, the region being adjacent to the first via and being separated from the plurality of routes; and inserting a second via based on the comparison. | 09-18-2014 |
20140327146 | METHODS FOR IMPROVING DOUBLE PATTERNING ROUTE EFFICIENCY - A design methodology for routing for an integrated circuit is disclosed. The method includes placement of cells having double diffusion breaks, which create an extended intercell region. Metal layer prohibit zones are defined to prohibit any M1 structures in the prohibit zones. Metal layer allow zones are placed adjacent to outer metal lines, and jogs are formed in the metal layer allow zones. Vias and viabars may then be applied on the jogs. | 11-06-2014 |
20140327153 | STANDARD CELL CONNECTION FOR CIRCUIT ROUTING - Embodiments described herein provide approaches for improving a standard cell connection for circuit routing. Specifically, provided is an IC device having a plurality of cells, a first metal layer (M | 11-06-2014 |
20140339610 | FINFET DEVICE AND METHOD OF FABRICATION - Embodiments of the present invention provide a novel method and structure for forming finFET structures that comprise standard cells. An H-shaped cut mask is used to reduce the number of fins that need to be removed, hence increasing the fin efficiency. | 11-20-2014 |
20140353765 | DOUBLE SIDEWALL IMAGE TRANSFER PROCESS - Methodology enabling a generation of fins having a variable fin pitch less than 40 nm, and the resulting device are disclosed. Embodiments include: forming a hardmask on a substrate; providing first and second mandrels on the hardmask; providing a first spacer on each side of each of the first and second mandrels; removing the first and second mandrels; providing, after removal of the first and second mandrels, a second spacer on each side of each of the first spacers; and removing the first spacers. | 12-04-2014 |
20140353842 | WIDE PIN FOR IMPROVED CIRCUIT ROUTING - Embodiments described herein provide approaches for improved circuit routing using a wide-edge pin. Specifically, provided is an integrated circuit (IC) device comprising a standard cell having a first metal layer (M1) pin coupled to a second metal layer (M2) wire at a via. The M1 pin has a width greater than a width of the via sufficient to satisfy an enclosure rule for the via, while the M1 pin extends vertically past the via a distance substantially equal to or greater than zero. This layout increases the number of available pin access points within the standard cell and thus improves routing efficiency and chip size. | 12-04-2014 |
20150028489 | METHOD FOR OFF-GRID ROUTING STRUCTURES UTILIZING SELF ALIGNED DOUBLE PATTERNING (SADP) TECHNOLOGY - A method for efficient off-track routing and the resulting device are disclosed. Embodiments include: providing a hardmask on a substrate; providing a plurality of first mandrels on the hardmask; providing a first spacer on each side of each of the first mandrels; providing a plurality of first non-mandrel regions of the substrate being separated from the first mandrels and between two of the first spacers, each of the first mandrels, first non-mandrel regions, and first spacers having a width equal to a distance; and providing a second mandrel having a width of at least twice the distance and being separated from one of the first non-mandrel regions by a second spacer. | 01-29-2015 |
20150067633 | COLOR-INSENSITIVE RULES FOR ROUTING STRUCTURES - Methodologies and an apparatus enabling a generation of color undeterminable polygons in IC designs are disclosed. Embodiments include: determining a plurality of first routes extending horizontally in an IC design, each of the plurality of first routes being placed on one of a plurality of equally spaced vertical positions of the IC design; determining whether a second route overlaps one of the vertical positions of the plurality of equally spaced vertical positions; and selecting a design rule for the second route based on the determination of whether the second route overlaps. | 03-05-2015 |
20150113484 | METHODS OF GENERATING CIRCUIT LAYOUTS THAT ARE TO BE MANUFACTURED USING SADP ROUTING TECHNIQUES - One method disclosed herein involves, among other things, generating a set of mandrel mask rules, block mask rules and a virtual, software-based non-mandrel-metal mask. The method also includes creating a set of virtual non-mandrel mask rules that is a replica of the mandrel mask rules, generating a set of metal routing design rules based upon the mandrel mask rules, the block mask rules and the virtual non-mandrel mask rules, generating the circuit routing layout based upon the metal routing design rules, decomposing the circuit routing layout into a mandrel mask pattern and a block mask pattern, generating a first set of mask data corresponding to the mandrel mask pattern, and generating a second set of mask data corresponding to the block mask pattern. | 04-23-2015 |
20150187702 | MIDDLE-OF-THE-LINE CONSTRUCTS USING DIFFUSION CONTACT STRUCTURES - An approach for providing MOL constructs using diffusion contact structures is disclosed. Embodiments include: providing a first diffusion region in a substrate; providing, via a first lithography process, a first diffusion contact structure; providing, via a second lithography process, a second diffusion contact structure; and coupling the first diffusion contact structure to the first diffusion region and the second diffusion contact structure. Embodiments include: providing a second diffusion region in the substrate; providing a diffusion gap region between the first and second diffusion regions; providing the diffusion contact structure over the diffusion gap region; and coupling, via the diffusion contact structure, the first and second diffusion regions. | 07-02-2015 |
20150213184 | METHOD AND APPARATUS FOR MODIFIED CELL ARCHITECTURE AND THE RESULTING DEVICE - A methodology for a modified cell architecture and the resulting devices are disclosed. Embodiments may include determining a first vertical track spacing for a plurality of first routes for an integrated circuit (IC) design, each of the plurality of first routes having a first width, determining a second vertical track spacing for a second route for the IC design, the second route having a second width, and designating a cell vertical dimension for the IC design based on the first and second vertical track spacings. | 07-30-2015 |
20150220676 | COLOR-INSENSITIVE RULES FOR ROUTING STRUCTURES - Methodologies and an apparatus enabling a generation of color undeterminable polygons in IC designs are disclosed. Embodiments include: determining a plurality of first routes extending horizontally in an IC design, each of the plurality of first routes being placed on one of a plurality of equally spaced vertical positions of the IC design; determining whether a second route overlaps one of the vertical positions of the plurality of equally spaced vertical positions; and selecting a design rule for the second route based on the determination of whether the second route overlaps. | 08-06-2015 |
20150243515 | METHODS OF PATTERNING LINE-TYPE FEATURES USING A MULTIPLE PATTERNING PROCESS THAT ENABLES THE USE OF TIGHTER CONTACT ENCLOSURE SPACING RULES - A method involving identifying a pattern for an overall target cut mask to be used in patterning line-type features that includes a target non-rectangular opening feature having an inner, concave corner, decomposing the overall target cut mask pattern into first and second sub-target patterns, wherein the first sub-target pattern comprises a first rectangular-shaped opening feature corresponding to a first portion, but not all, of the target non-rectangular opening feature and the second sub-target pattern comprises a second rectangular-shaped opening feature corresponding to a second portion, but not all, of the target non-rectangular opening feature, the first and second openings overlapping adjacent the inner, concave corner, and generating first and second sets of mask data corresponding to the first and second sub-target patterns, wherein at least one of the first and second sets of mask data is generated based upon an identified contact-to-end-of-cut-line spacing rule. | 08-27-2015 |
20150286764 | METHODS OF GENERATING CIRCUIT LAYOUTS USING SELF-ALLIGNED DOUBLE PATTERNING (SADP) TECHNIQUES - At least one method disclosed herein involves creating an overall pattern layout for an integrated circuit that is to be manufactured using a self-aligned double patterning (SADP) process, forming a first metal feature having a first width on a first track of a metal layer using the SADP process, forming a second metal feature having a second width on a second track of the metal layer. The second track is adjacent to the first track. The method also includes forming an electrical connection between the first metal feature and the second metal feature to provide an effectively single metal pattern having a third width that is the sum of the first and second widths, rendering the first and second features decomposable using the SADP process; and decomposing e overall pattern layout with the first and second metal features into a mandrel mask pattern and a block mask pattern. | 10-08-2015 |
20150287636 | TRANSISTOR CONTACTS SELF-ALIGNED IN TWO DIMENSIONS - Embodiments of the present invention provide an improved semiconductor structure and methods of fabrication that provide transistor contacts that are self-aligned in two dimensions. Two different capping layers are used, each being comprised of a different material. The two capping layers are selectively etchable to each other. One capping layer is used for gate coverage while the other capping layer is used for source/drain coverage. Selective etch processes open the desired gates and source/drains, while block masks are used to cover elements that are not part of the connection scheme. A metallization line (layer) is deposited, making contact with the open elements to provide electrical connectivity between them. | 10-08-2015 |
20150311122 | FORMING GATE TIE BETWEEN ABUTTING CELLS AND RESULTING DEVICE - Methods for forming abutting FinFET cells with a single dummy gate and continuous fins, and the resulting devices, are disclosed. Embodiments may include forming one or more continuous fins on a substrate, forming gates perpendicular to and over the one or more continuous fins to form a first FinFET cell and a second FinFET cell, and forming source and drain contact lines parallel to and between the gates, wherein a source contact line of the first FinFET cell is adjacent to a drain contact line of the second FinFET cell, and the source contact line and the drain contact line are on opposite sides of a gate. | 10-29-2015 |
20150331988 | WIDE PIN FOR IMPROVED CIRCUIT ROUTING - Embodiments described herein provide approaches for improved circuit routing using a wide-edge pin. Specifically, provided is an integrated circuit (IC) device comprising a standard cell having a first metal layer (M1) pin coupled to a second metal layer (M2) wire at a via. The M1 pin has a width greater than a width of the via sufficient to satisfy an enclosure rule for the via, while the M1 pin extends vertically past the via a distance substantially equal to or greater than zero. This layout increases the number of available pin access points within the standard cell and thus improves routing efficiency and chip size. | 11-19-2015 |
20150339428 | MASK-AWARE ROUTING AND RESULTING DEVICE - Methods for routing a metal routing layer based on mask design rules and the resulting devices are disclosed. Embodiments may include laying-out continuous metal lines in a semiconductor design layout, and routing, by a processor, a metal routing layer using the continuous metal lines according to placement of cut or block masks based on cut or block mask design rules. | 11-26-2015 |
Patent application number | Description | Published |
20100140685 | Nonvolatile Memory Devices - Nonvolatile memory devices and methods of manufacturing nonvolatile memory devices are provided. The method includes patterning a bulk substrate to form an active pillar; forming a charge storage layer on a side surface of active pillar; and forming a plurality of gates connected to the active pillar, the charge storage layer being disposed between the active pillar and the gates. Before depositing a gate, a bulk substrate is etched using a dry etching to form a vertical active pillar which is in a single body with a semiconductor substrate. | 06-10-2010 |
20100213521 | Semiconductor devices and methods of forming semiconductor devices - A semiconductor device includes a back bias dielectric including a negative fixed charge, a gate electrode overlapping the back bias dielectric, a semiconductor layer disposed between the gate electrode and the back bias dielectric, and a gate dielectric disposed between the semiconductor layer and the gate electrode, wherein the negative fixed charge accumulates holes at a surface of the semiconductor layer facing the back bias dielectric. | 08-26-2010 |
20100213524 | Semiconductor memory device and method of manufacturing the same - A semiconductor memory device includes a plurality of active pillars protruding from a semiconductor substrate, a first gate electrode disposed on at least one sidewall of the active pillar, a first gate insulating layer being disposed between the active pillar and the first gate electrode, a second gate electrode disposed on at least one sidewall of the active pillar over the first gate electrode, a second gate insulating layer being disposed between the active pillar and the second gate electrode, first and second body regions in the active pillar adjacent to respective first and second respective electrodes, and first through third source/drain regions in the active pillar arranged alternately with the first and second body regions. | 08-26-2010 |
20100224923 | Semiconductor memory device and method of manufacturing the same - Provided are a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device may include a plurality of active pillars projecting from a semiconductor substrate, a gate pattern disposed on at least a portion of each of the active pillars with a gate insulator interposed therebetween, and a conductive line disposed on each of the active pillars and below the corresponding gate pattern, the conductive line may be insulated from the semiconductor substrate and the gate pattern, wherein each of the active pillars may include a drain region above the corresponding gate pattern, a body region adjacent to the corresponding gate pattern, and a source region that is in contact with the conductive line below the gate pattern. | 09-09-2010 |
20120009747 | Methods of Manufacturing Nonvolatile Memory Devices - Nonvolatile memory devices and methods of manufacturing nonvolatile memory devices are provided. The method includes patterning a bulk substrate to form an active pillar; forming a charge storage layer on a side surface of active pillar; and forming a plurality of gates connected to the active pillar, the charge storage layer being disposed between the active pillar and the gates. Before depositing a gate, a bulk substrate is etched using a dry etching to form a vertical active pillar which is in a single body with a semiconductor substrate. | 01-12-2012 |
20130221447 | FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME - Provided are field effect transistors and methods of fabricating the same. The transistor may include a substrate with an active pattern, the active pattern having a top surface and two sidewalls, a gate electrode proximal to the top surface and the sidewalls of the active pattern and crossing the active pattern, a gate spacer covering a sidewall of the gate electrode, a gate dielectric pattern at a bottom surface of the gate electrode, a source electrode on the active pattern at one side of the gate electrode, a drain electrode on the active pattern at another side of the gate electrode, and silicide patterns on surfaces of the source and drain electrodes, respectively. The gate dielectric pattern includes at least one high-k layer and the gate spacer has a dielectric constant that is smaller than that of the gate dielectric pattern. | 08-29-2013 |
20130224936 | METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE - Methods of manufacturing a semiconductor device are provided. The method includes constructing and arranging a semiconductor substrate to include a first active region and a second active region and forming mold patterns on the semiconductor substrate. The mold patterns have openings that expose a top surface of the semiconductor substrate. A plurality of first semiconductor fins are formed in openings at the first active region and a plurality of second semiconductor fins in openings at the second active region and selectively recessing top surfaces of the mold patterns. A recessed depth of the mold patterns on the first active region is different than a recessed depth of the mold patterns on the second active region. A gate electrode is formed over the first and second semiconductor fins. A distance between a first semiconductor fin of the plurality of first semiconductor fins and a second semiconductor fin of the plurality of second semiconductor fins adjacent the first semiconductor fin is greater than a distance between two or more first semiconductor fins of the plurality of first semiconductor fins that are adjacent each other. | 08-29-2013 |
20130244392 | METHOD OF FABRICATING FIN-FIELD EFFECT TRANSISTORS (FINFETS) HAVING DIFFERENT FIN WIDTHS - Provided are methods of forming field effect transistors. The method includes preparing a substrate with a first region and a second region, forming fin portions on the first and second regions, each of the fin portions protruding from the substrate and having a first width, forming a first mask pattern to expose the fin portions on the first region and cover the fin portions on the second region, and changing widths of the fin portions provided on the first region. | 09-19-2013 |
20150162437 | Method of Fabricating FIN-Field Effect Transistors (FINFETS) Having Different FIN Widths - Provided are methods of forming field effect transistors. The method includes preparing a substrate with a first region and a second region, forming fin portions on the first and second regions, each of the fin portions protruding from the substrate and having a first width, forming a first mask pattern to expose the fin portions on the first region and cover the fin portions on the second region, and changing widths of the fin portions provided on the first region. | 06-11-2015 |
20150279960 | FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME - Provided are field effect transistors and methods of fabricating the same. The transistor may include a substrate with an active pattern, the active pattern having a top surface and two sidewalls, a gate electrode proximal to the top surface and the sidewalls of the active pattern and crossing the active pattern, a gate spacer covering a sidewall of the gate electrode, a gate dielectric pattern at a bottom surface of the gate electrode, a source electrode on the active pattern at one side of the gate electrode, a drain electrode on the active pattern at another side of the gate electrode, and silicide patterns on surfaces of the source and drain electrodes, respectively. The gate dielectric pattern includes at least one high-k layer and the gate spacer has a dielectric constant that is smaller than that of the gate dielectric pattern. | 10-01-2015 |