| Patent application number | Description | Published |
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| 20140213007 | INTERNAL ELECTRICAL CONTACT FOR ENCLOSED MEMS DEVICES - A method of fabricating electrical connections in an integrated MEMS device is disclosed. The method comprises forming a MEMS wafer. Forming a MEMS wafer includes forming one cavity in a first semiconductor layer, bonding the first semiconductor layer to a second semiconductor layer with a dielectric layer disposed between the first semiconductor layer and the second semiconductor layer, and etching at least one via through the second semiconductor layer and the dielectric layer and depositing a conductive material on the second semiconductor layer and filling the at least one via. Forming a MEMS wafer also includes patterning and etching the conductive material to form one standoff and depositing a germanium layer on the conductive material, patterning and etching the germanium layer, and patterning and etching the second semiconductor layer to define one MEMS structure. The method also includes bonding the MEMS wafer to a base substrate. | 07-31-2014 |
| 20140264655 | SURFACE ROUGHENING TO REDUCE ADHESION IN AN INTEGRATED MEMS DEVICE - In an integrated MEMS device, moving silicon parts with smooth surfaces can stick together if they come into contact. By roughening at least one smooth surface, the effective area of contact, and therefore surface adhesion energy, is reduced and hence the sticking force is reduced. The roughening of a surface can be provided by etching the smooth surfaces in gas, plasma, or liquid with locally non-uniform etch rate. Various etch chemistries and conditions lead to various surface roughness. | 09-18-2014 |
| 20140349434 | INTERNAL ELECTRICAL CONTACT FOR ENCLOSED MEMS DEVICES - A method of fabricating electrical connections in an integrated MEMS device is disclosed. The method comprises forming a MEMS wafer. Forming a MEMS wafer includes forming one cavity in a first semiconductor layer, bonding the first semiconductor layer to a second semiconductor layer with a dielectric layer disposed between the first semiconductor layer and the second semiconductor layer, and etching at least one via through the second semiconductor layer and the dielectric layer and depositing a conductive material on the second semiconductor layer and filling the at least one via. Forming a MEMS wafer also includes patterning and etching the conductive material to form one standoff and depositing a germanium layer on the conductive material, patterning and etching the germanium layer, and patterning and etching the second semiconductor layer to define one MEMS structure. The method also includes bonding the MEMS wafer to a base substrate. | 11-27-2014 |
| 20150021727 | APPLICATION SPECIFIC INTEGRATED CIRCUIT WITH INTEGRATED MAGNETIC SENSOR - A method and system for a device with a magnetic sensor element and magnetic storage elements is disclosed. The device includes an integrated circuit substrate. At least a magnetic sensor with a magnetic sensor element with a permanent magnet is disposed over the integrated circuit substrate. A plurality of magnetic storage elements, each with at least one permanent magnet is disposed over the integrated circuit substrate. | 01-22-2015 |
| 20150076631 | REDUCTION OF CHIPPING DAMAGE TO MEMS STRUCTURE - A MEMS (microelectromechanical systems) structure comprises a MEMS wafer. A MEMS wafer includes a cap with cavities bonded to a structural layer through a dielectric layer disposed between the cap and the structural layer. Unique configurations of MEMS devices and methods of providing such are set forth which provide for, in part, creating rounded, scalloped or chamfered MEMS profiles by shaping the etch mask photoresist reflow, by using a multi-step deep reactive ion etch (DRIE) with different etch characteristics, or by etching after DRIE. | 03-19-2015 |
| 20150115952 | DEVICE WITH MAGNETIC SENSORS WITH PERMANENT MAGNETS - A device with a magnetic sensor is disclosed. The device includes a substrate with a device layer. A magnetic sensor is formed on the device layer and includes a first permanent magnet. The first permanent magnet has at least one alternating ferromagnetic (FM) layer and antiferromagnetic (AFM) layer, with a buffer layer disposed between the FM layer and the AFM layer. The first permanent magnet is magnetized in a first direction at a temperature higher than a blocking temperature of the AFM layer. A plurality of device pads are coupled to the magnetic sensor. An integrated circuit substrate with a plurality of IC pads, wherein the plurality of device pads are selectively eutectic bonded to the plurality of IC pads at a bonding temperature greater than the blocking temperature of the AFM layer of the first permanent magnet. | 04-30-2015 |
| 20150129991 | CMOS-MEMS INTEGRATED DEVICE INCLUDING MULTIPLE CAVITIES AT DIFFERENT CONTROLLED PRESSURES AND METHODS OF MANUFACTURE - An integrated MEMS device comprises two substrates where the first and second substrates are coupled together and have two enclosures there between. One of the first and second substrates includes an outgassing source layer and an outgassing barrier layer to adjust pressure within the two enclosures. The method includes depositing and patterning an outgassing source layer and a first outgassing barrier layer on the substrate, resulting in two cross-sections. In one of the two cross-sections a top surface of the outgassing source layer is not covered by the outgassing barrier layer and in the other of the two cross-sections the outgassing source layer is encapsulated in the outgassing barrier layer. The method also includes depositing conformally a second outgassing barrier layer and etching the second outgassing barrier layer such that a spacer of the second outgassing barrier layer is left on sidewalls of the outgassing source layer. | 05-14-2015 |
| 20150192646 | MAGNETIC SENSORS WITH PERMANENT MAGNETS MAGNETIZED IN DIFFERENT DIRECTIONS - A method and system for a device with a magnetic sensor is disclosed. The magnetic sensor includes a first permanent magnet and a second permanent magnet. The first permanent magnet and the second permanent magnet have atleast one alternating ferromagnetic (FM) layer and antiferromagnetic (AFM) layer. The first permanent magnet is magnetized in a first direction and the second permanent magnet is magnetized in a second direction which is substantially orthogonal to the first direction. The blocking temperature of the AFM layer of the first permanent magnet is higher than the blocking temperature of the AFM layer of the second permanent magnet. | 07-09-2015 |
| 20150274517 | METHOD TO IMPROVE SURFACE ROUGHNESS AND ELIMINATE SHARP CORNERS ON AN ACTUATOR LAYER OF A MEMS DEVICE - A method for forming an actuator layer of a MEMS device is disclosed. The method comprising etching the actuator layer and annealing the actuator layer after etching to reduce surface roughness of the MEMS device. | 10-01-2015 |
| 20150311178 | CMOS-MEMS INTEGRATION BY SEQUENTIAL BONDING METHOD - Methods for bonding two wafers are disclosed. In one aspect, a first wafer includes an integrated circuit and the second wafer including a MEMS device. The method comprises depositing a bond pad on a metal on the first wafer and sequentially bonding the first wafer to the second wafer utilizing first and second temperatures. The second wafer is bonded to the bond pad at the first temperature and the bond pad and the metal are bonded at the second temperature. In another aspect, a first wafer including an integrated circuit, the second wafer includes a MEMS device. The method comprises depositing a bond pad on a metal on one of the first wafer and the second wafer and bonding the first wafer to the second wafer at a first temperature via a direct bond interface. The method includes bonding the bond pad to the metal at a second temperature. | 10-29-2015 |
