Patent application number | Description | Published |
20080230511 | HALOGEN-FREE AMORPHOUS CARBON MASK ETCH HAVING HIGH SELECTIVITY TO PHOTORESIST - In one embodiment of the present invention, a halogen-free plasma etch processes is used to define a feature in a multi-layered masking stack including an amorphous carbon layer. In a particular embodiment, oxygen (O | 09-25-2008 |
20080286979 | Method of controlling sidewall profile by using intermittent, periodic introduction of cleaning species into the main plasma etching species - A method of removing a silicon-containing hard polymeric material from an opening leading to a recessed feature during the plasma etching of said recessed feature into a carbon-containing layer in a semiconductor substrate. The method comprises the intermittent use of a cleaning step within a continuous etching process, where at least one fluorine-containing cleaning agent species is added to already present etchant species of said continuous etching process for a limited time period, wherein the length of time of each cleaning step ranges from about 5% to about 100% of the time length of an etch step which either precedes or follows said cleaning step. | 11-20-2008 |
20100101729 | PROCESS KIT HAVING REDUCED EROSION SENSITIVITY - Process kits for use in a semiconductor process chambers have been provided herein. In some embodiments, a process kit for a semiconductor process chamber includes a body configured to rest about a periphery of a substrate support and having sidewalls defining an opening corresponding to a central region of the substrate support. A lip extends from the sidewalls of the body into the opening, wherein a portion of an upper surface of the lip is configured to be disposed beneath a substrate during processing. A first distance measured between opposing sidewalls of the body is greater than a width across the upper surface of a substrate to be disposed within the opening by at least about 7.87 mm. | 04-29-2010 |
20130029484 | MAINTAINING MASK INTEGRITY TO FORM OPENINGS IN WAFERS - One or more openings in an organic mask layer deposited on a first insulating layer over a substrate are formed. One or more openings in the first insulating layer are formed through the openings in the organic mask using a first iodine containing gas. An antireflective layer can be deposited on the organic mask layer. One or more openings in the antireflective layer are formed down to the organic mask layer using a second iodine containing gas. The first insulating layer can be deposited on a second insulating layer over the substrate. One or more openings in the second insulating layer can be formed using a third iodine containing gas. | 01-31-2013 |
20130109188 | PLASMA ETCH PROCESSES FOR BORON-DOPED CARBONACEOUS MASK LAYERS | 05-02-2013 |
20130122707 | METHODS OF POLYMERS DEPOSITION FOR FORMING REDUCED CRITICAL DIMENSIONS - Methods of polymer deposition for forming reduced critical dimensions are described. In one embodiment, a substrate is provided into a chamber, the substrate having a patterned layer disposed on an underlying layer formed thereon. The patterned layer includes a plurality of openings, each opening having a sidewall, a bottom, and a critical dimension. A gas mixture is provided into the chamber, the gas mixture having an etching gas and a polymer control gas. The polymer control gas includes a polymerizing fluorocarbon C | 05-16-2013 |
20130122712 | METHOD OF ETCHING HIGH ASPECT RATIO FEATURES IN A DIELECTRIC LAYER - Methods of etching HAR features in a dielectric layer are described. In one embodiment, a substrate is provided into an etch chamber. The substrate has a patterned mask disposed on a dielectric layer formed thereon where the patterned mask has openings. A gas mixture is provided into the etch chamber, the gas mixture includes CO, O | 05-16-2013 |
20130224960 | METHODS FOR ETCHING OXIDE LAYERS USING PROCESS GAS PULSING - Methods for etching an oxide layer disposed on a substrate through a patterned layer defining one or more features to be etched into the oxide layer are provided herein. In some embodiments, a method for etching an oxide layer disposed on a substrate through a patterned layer defining one or more features to be etched into the oxide layer may include: etching the oxide layer through the patterned layer using a process gas comprising a polymer forming gas and an oxygen containing gas to form the one or more features in the oxide layer; and pulsing at least one of the polymer forming gas or the oxygen containing gas for at least a portion of etching the oxide layer to control a dimension of the one or more features. | 08-29-2013 |
20140065824 | MAINTAINING MASK INTEGRITY TO FORM OPENINGS IN WAFERS - One or more openings in an organic mask layer deposited on a first insulating layer over a substrate are formed. One or more openings in the first insulating layer are formed through the openings in the organic mask using a first iodine containing gas. An antireflective layer can be deposited on the organic mask layer. One or more openings in the antireflective layer are formed down to the organic mask layer using a second iodine containing gas. The first insulating layer can be deposited on a second insulating layer over the substrate. One or more openings in the second insulating layer can be formed using a third iodine containing gas. | 03-06-2014 |
20140213059 | BORON-DOPED CARBON-BASED HARDMASK ETCH PROCESSING - Boron-doped carbon-based hardmask etch processing is described. In an example, a method of patterning a film includes etching a boron-doped amorphous carbon layer with a plasma based on a combination of CH | 07-31-2014 |
20140213062 | SILICON DIOXIDE-POLYSILICON MULTI-LAYERED STACK ETCHING WITH PLASMA ETCH CHAMBER EMPLOYING NON-CORROSIVE ETCHANTS - Multilayered stacks having layers of silicon interleaved with layers of a dielectric, such as silicon dioxide, are plasma etched with non-corrosive process gas chemistries. Etching plasmas of fluorine source gases, such as SF | 07-31-2014 |
20140342570 | ETCH PROCESS HAVING ADAPTIVE CONTROL WITH ETCH DEPTH OF PRESSURE AND POWER - The disclosure concerns a plasma-enhanced etch process in which chamber pressure and/or RF power level is ramped throughout the etch process. | 11-20-2014 |
20150041061 | RECURSIVE PUMPING FOR SYMMETRICAL GAS EXHAUST TO CONTROL CRITICAL DIMENSION UNIFORMITY IN PLASMA REACTORS - Embodiments of the present invention provide apparatus and methods for reducing non-uniformity and/or skews during substrate processing. One embodiment of the present invention provides a flow equalizer assembly for disposing between a vacuum port and a processing volume in a processing chamber. The flow equalizing assembly includes a first plate having at least one first opening, and a second plate having two or more second openings. The first and second plates define a flow redistributing volume therebetween, and the at least one first opening and the two or more second openings are staggered. | 02-12-2015 |
20150072530 | METHODS FOR ETCHING MATERIALS USING SYNCHRONIZED RF PULSES - Embodiments of the present invention provide methods for etching a material layer using synchronized RF pulses. In one embodiment, a method includes providing a gas mixture into a processing chamber, applying a first RF source power at a first time point to the processing chamber to form a plasma in the gas mixture, applying a first RF bias power at a second time point to the processing chamber to perform an etching process on the substrate, turning off the first RF bias power at a third time point while continuously maintaining the first RF source power on from the first time point through the second and the third time points, and turning off the first RF source power at a fourth time point while continuously providing the gas mixture to the processing chamber from the first time point through the second, third and fourth time points. | 03-12-2015 |