Patent application number | Description | Published |
20080278891 | Monolithic sensor arrangement and method for controlling a monolithic sensor arrangement - A monolithic sensor arrangement includes a housing, a sensor integrated in the housing, and two or three connecting contacts deployed on the housing so as to provide a contact with the sensor. The housing also includes an integrated digital circuit includes a freely programmable digital processor, a program memory and a data memory, which are used to control and/or process the functionalities and/or the measured data of the sensor. | 11-13-2008 |
20090252210 | CIRCUIT ARRANGEMENT, APPARATUS AND PROCESS FOR THE SERIAL SENDING OF DATA VIA A CONNECTION CONTACT - The invention relates to an integrated circuit arrangement with connection contacts for the serial exchange of data and/or signals with external components and apparatuses and with a control apparatus and/or a serial interface for the clocked receiving of data by means of a signal voltage on such a connection contact, which voltage is modulated between at least one low, one middle and one high voltage state. The control apparatus and/or the interface are designed in such a manner that data is sent in a sending mode via the connection contact in that the switching apparatus, after having received a slope changing in particular from the middle voltage state into in particular the higher or the lower voltage state, pulls the voltage state into the in particular opposite lower or higher voltage state. Furthermore, the invention relates to an apparatus and a process for operating such a circuit arrangement. | 10-08-2009 |
20110234813 | SENSOR MODULE AND METHOD FOR MONITORING THE FUNCTION THEREOF - In a method for monitoring the function of a sensor module, which has a sensor, by means of the sensor a measurement signal for a physical quantity to be determined is generated and applied to an output terminal in an unchanged form or in processed form—after at least one linear signal processing step and/or at least one nonlinear signal processing step are performed. In addition, a test signal is generated whose spectrum lies substantially outside the spectrum of the measurement signal. The test signal is supplied at a place in the sensor from which it reaches the output terminal in unchanged form or in processed form—after the performance of the at least one linear signal processing step—only in the case of a functional sensor. An output signal present at the output terminal is compared with the test signal and a diagnosis signal is generated, which indicates whether the test signal is present at the output terminal. The test signal is filtered out of the output signal and the remaining signal is applied as the measurement signal at a measurement signal output of the sensor module. | 09-29-2011 |
20110291645 | MEASURING APPARATUS FOR THE DETECTION OF A RELATIVE MOVEMENT - A measuring apparatus for detecting a relative movement between at least one magnetic field sensor array integrated into a semiconductor chip and a transmitter for the sensor array is provided. The transmitter and the sensor array are exposed to the magnetic flux of a magnet. The transmitter has teeth that can be moved past the sensor array during the relative movement, or the transmitter has magnet poles that can be moved past the sensor array during the relative movement. The magnetic field sensor includes a differential magnetic field sensor which comprises a first measuring plate and a second measuring plate that are offset in relation to one another in a direction of the relative movement. The magnetic field sensor also includes a sensor element which is designed to measure the absolute magnetic field and comprises a third measuring plate that is arranged between the first measuring plate and the second measuring plate in the direction of the relative movement. | 12-01-2011 |
20110291650 | SEMICONDUCTOR CHIP AND METHOD FOR GENERATING PULSE EDGES, ASSIGNED SYNCHRONOUSLY TO THE MOVEMENT OF A MECHANICAL PART - In a method for generating pulse edges, assigned synchronously to the movement of a mechanical part, a magnetic field is generated. At least two measuring signals phase-shifted to one another for the magnetic field are detected. The magnetic field is changed as a function of the movement of the mechanical part in such a way that the measuring signals are modulated. A first measuring signal is compared with at least one first reference value. A second measuring signal is compared with at least one second reference value and/or the value of the first measuring signal is compared with the value of the second measuring signal. When at least one of these comparisons produces an agreement or the result of the relevant comparison changes its sign, a pulse edge is generated. | 12-01-2011 |
20120137777 | Acceleration sensor and/or tilt sensor - Acceleration and/or tilt sensor having a ferromagnetic fluid that is located in a receptacle, and the receptacle constitutes a neutral position for the fluid, and the fluid is permanently magnetized, and a magnetic field detector arrangement is located at the receptacle to detect a displacement of the fluid, wherein a portion of the fluid can be displaced relative to the receptacle from the neutral position to an operating position by an external force while maintaining a continuous surface with the portion of the fluid remaining in the neutral position, and the fluid returns to the neutral position after removal of the external force. | 06-07-2012 |
20120217597 | DEVICE FOR INCREASING THE MAGNETIC FLUX DENSITY - A device for increasing the magnetic flux density includes a semiconductor body and a first magnetic sensor integrated into the semiconductor body, whereby a housing section, which forms a cavity, is arranged above the sensor on the semiconductor surface and the cavity is filled with a ferromagnetic material and the material comprises a liquid. | 08-30-2012 |
20120256283 | INTEGRATED PASSIVE COMPONENT - An integrated passive component having a semiconductor body, arranged on a metal substrate and having a first surface, and a plurality of metal surfaces formed on the surface, and an integrated circuit formed on the surface of the semiconductor body, whereby the integrated circuit is connected by traces to the metal surfaces, and having a dielectric passivation layer formed on the surface, and the metal surfaces are connected to pins by bonding wires, and a first coil former, formed above the dielectric layer, with a winding, whereby the winding has a first connector and a second connector, and whereby the winding is formed as a wire or litz wire and the first connector of the winding is connected to a first metal surface and the second connector to a second metal surface. | 10-11-2012 |
20120280341 | INTEGRATED PASSIVE COMPONENT - An integrated passive component having a semiconductor body, arranged on a metal substrate and having a first surface, and a plurality of metal surfaces formed on the surface, a passivation layer formed on the surface, an integrated circuit formed near the surface of the semiconductor body, whereby the integrated circuit is connected to metal surfaces via traces formed below the passivation layer, a part of the metal surfaces is connected to pins via bonding wires, a first part of a first coil, the part formed in part above the semiconductor body, whereby the first coil with a plurality of turns has a longitudinal axis formed substantially parallel to the surface of the semiconductor body, and a second part of the first coil is formed below the semiconductor body. | 11-08-2012 |
20120280342 | INTEGRATED PASSIVE COMPONENT - An integrated passive component having a semiconductor body, arranged on a metal substrate and having a first surface, and a plurality of metal surfaces formed on the surface, a passivation layer formed on the surface, an integrated circuit formed near the surface of the semiconductor body, whereby the integrated circuit is connected to metal surfaces via traces formed below the passivation layer, a part of the metal surfaces is connected to pins via bonding wires, and a first coil formed above the passivation layer, whereby the first coil with a plurality of turns has a longitudinal axis formed substantially parallel to the surface of the semiconductor body, and in a lower part of the first coil, said part which is formed substantially parallel to the longitudinal axis of the coil on the surface of the semiconductor body, parts of a plurality of turns are formed as sections of traces. | 11-08-2012 |
20130015839 | INTEGRATED CURRENT SENSORAANM FRANKE; JoergAACI FreiburgAACO DEAAGP FRANKE; Joerg Freiburg DE - An integrated current sensor is provided, having a semiconductor body arranged on a metal substrate, having a first surface with a passivation layer embodied on the first surface and a magnetic field concentrator embodied in a flat manner under the semiconductor body, a first Hall-effect sensor embodied under the passivation layer in the semiconductor body, a second Hall-effect sensor embodied under the passivation layer in the semiconductor body, wherein a first conductor is provided embodied on the first surface between the first Hall-effect sensor and the second Hall-effect sensor, and the magnetic field concentrator is embodied under the first Hall-effect sensor and under the second Hall-effect sensor and under the first conductor. | 01-17-2013 |
20130099781 | CURRENT SENSOR AND METHOD FOR DETECTING A CURRENTLESS STATE - A current sensor having a magnetic field sensor, and a variable current source connected to the magnetic field sensor, and a first differential amplifier, connected to the magnetic field sensor, for amplifying a first sensor voltage. A second differential amplifier is provided and the second differential amplifier is connected to the first differential amplifier and to the current source. In the case of the first sensor voltage, a first operating current is present at the magnetic field sensor and in the case of a second sensor voltage, a second operating current is present, whereby the second Hall voltage is smaller than the first sensor voltage and the second operating current is greater than the first operating current. | 04-25-2013 |
20140159178 | MAGNETIC FIELD SENSOR - A magnetic field sensor having a support with a top side and a bottom side, whereby a Hall plate is provided on the top side of the support and the Hall plate comprises a carbon-containing layer. | 06-12-2014 |
20140197820 | MEASURING SYSTEM - A measuring system having a first magnetic field sensor, an encoder, and an evaluation circuit. The first magnetic field sensor and the second magnetic field sensor and the third magnetic field sensor are connected to the encoder. The evaluation circuit has a logic, which is set up to determine the position of the encoder based on a first measurement signal of a first magnetic field sensor and a second measurement signal of a second magnetic field sensor and a third measurement signal of a third magnetic field sensor. | 07-17-2014 |
20140197821 | MEASURING SYSTEM - A measuring system having a first magnetic field sensor, a second magnetic field sensor, a third magnetic field sensor, an encoder, and an evaluation circuit to which the first magnetic field sensor, the second magnetic field sensor, and the third magnetic field sensor are connected. The evaluation circuit is configured to determine the position of the encoder based on a first measurement signal of the first magnetic field sensor and a second measurement signal of the second magnetic field sensor and a third measurement signal of the third magnetic field sensor. | 07-17-2014 |
20140197822 | CIRCUIT AND MEASURING SYSTEM - A measuring system having a first magnetic field sensor, a second magnetic field sensor, an encoder, and an evaluation circuit to which the first magnetic field sensor and the second magnetic field sensor are connected. The evaluation circuit generates a first signal and a second measurement signal. The encoder generates a second magnetic field change with a second periodicity. The evaluation circuit generates a second signal with the second periodicity from the first measurement signal of the first magnetic field sensor and the second measurement signal of the second magnetic field sensor according to an absolute value function. | 07-17-2014 |
20140333298 | MEASURING SYSTEM - A measuring system having a magnetic device for generating a magnetic field and having a magnetic field sensor for detecting a flux density of the magnetic field at least in a first spatial direction, whereby the magnetic field sensor is fixedly positioned relative to the magnetic device. The magnetic device has at least two main poles for generating a main magnetic field and at least two secondary poles for generating a secondary magnetic field. The magnetic field in the magnetic field sensor is formed by superposition of the main magnetic field and the secondary magnetic field. The magnetic field sensor is designed to measure the flux density of the superposition in the first spatial direction, and, in the magnetic field sensor, the secondary magnetic field compensates at least partially the main magnetic field in the first spatial direction. | 11-13-2014 |
20140333299 | MEASURING SYSTEM - A measuring system, having a magnetic device for generating a magnetic field and having a magnetic field sensor with a sensor surface for detecting a flux density of the magnetic field penetrating the sensor surface at least in a first spatial direction, whereby the magnetic field sensor is fixedly positioned relative to the magnetic device. The magnetic device can have at least one permanent magnet and a flux concentrator made of a ferromagnetic material. The permanent magnet has at least two pole surfaces and an outer surface. The flux concentrator can have a smaller dimensions than the outer surface of the permanent magnet. The flux concentrator can be positioned within the outer surface of the permanent magnet and the flux concentrator and the permanent magnet can have a magnetic force closure. | 11-13-2014 |
20140346579 | MAGNETIC FIELD SENSOR DEVICE - A magnetic field sensor device having a semiconductor body, whereby the semiconductor body has a top side and a bottom side, and whereby the semiconductor body has a substrate layer and a passivation layer formed above the substrate on the top side of the semiconductor body, and one or more integrated electronic components are formed in the substrate layer of the semiconductor body, and a Hall plate is provided on the top side of the semiconductor body above the passivation layer, and the Hall plate is formed of a graphene compound. | 11-27-2014 |