Patent application number | Description | Published |
20090050352 | SUBSTRATE STRUCTURES FOR FLEXIBLE ELECTRONIC DEVICES AND FABRICATION METHODS THEREOF - The invention provides flexible electronic substrate structures and fabrication methods thereof. The flexible electronic substrate structures include a large scale carrier and a plurality of flexible substrates disposed on the large scale carrier, wherein the flexible substrate includes polymeric material formed by coating. The flexible substrates are patterned polymer materials formed by a coating process, wherein the coating process comprises doctor knife coating, spin coating, or table coating. | 02-26-2009 |
20090267075 | OGANIC THIN FILM TRANSISTOR AND PIXEL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME AND DISPLAY PANEL - A method of manufacturing an organic thin film transistor is described. A patterned insulating layer having an opening therein is formed on a substrate. A gate is formed in the opening of the insulating layer, and a gate insulating layer is formed on the gate. A conductive material layer is formed on the gate insulating layer by a printing process. One of the gate insulating layer and the conductive material layer is hydrophobic or hydrophilic and the other is hydrophilic or hydrophobic, such that the conductive material layer is naturally separated to two sides of the gate insulating layer to form a source and a drain. An active layer is formed on the gate insulating layer between the source and the drain. | 10-29-2009 |
20100084636 | COMPOSITION FOR PHOTOSENSITIVE ORGANIC DIELECTRIC MATERIAL AND APPLICATION THEREOF - A composition for photosensitive dielectric material is provided. The composition includes 4 to 10 percent by weight of a polymer material, 1.5 to 10 percent by weight of a crosslinking agent, 0.32 to 2 percent by weight of a photoacid generator (PAG) and 78 to 94.18 percent by weight of solvent, based on a total weight of the composition. | 04-08-2010 |
20100127270 | THIN FILM TRANSISTOR - A thin film transistor is provided. The thin film transistor includes a gate, at least one inorganic material layer, at least one dielectric layer, a source, a drain and an active layer. The gate is disposed on the substrate. The inorganic material layer covers the gate. The dielectric layer including at least one organic material covers the substrate and has an opening exposing the inorganic material layer on the gate. The source and the drain are disposed on the dielectric layer and a part of the inorganic layer exposed by the opening respectively. A channel region exists between the source and the drain. The active layer is disposed on the channel region. | 05-27-2010 |
20100148654 | SUBSTRATE, FABRICATION METHOD THEREOF AND A DISPLAY USING THE SAME - A substrate board, a fabricating method thereof, and a display using the same are provided. The substrate board includes a substrate having at least a rigid area and at least a flexible area, and at least an electronic component disposed on a surface of the substrate, wherein the rigid area is thicker than the flexible area. A patterned high-extensive material may be additionally disposed on the substrate to improve reliability thereof. The rigid area and the flexible area may be formed by molds or cutters. By using an above structure, the electronic component is less affected when the substrate is under stress, so that good characteristics are maintained. | 06-17-2010 |
20100164369 | APPARATUS OF ORGANIC LIGHT EMITTING DIODE AND PACKAGING METHOD OF THE SAME - A packaging method of an organic light emitting diode (OLED) is described. First, a substrate is provided, and the substrate has the OLED device formed thereon. Thereafter, at least one protection layer is formed on the substrate, so as to cover the peripheral sidewall of the OLED device entirely. The step of forming the protection layer includes forming an organic layer on the substrate, and then forming a metal layer on the organic layer, wherein the metal layer at least covers a sidewall of the OLED device. Afterwards, an oxidation treatment is performed, so as to oxidize a portion of the metal layer. | 07-01-2010 |
20100258346 | PACKAGE OF ENVIRONMENTALLY SENSITIVE ELECTRONIC DEVICE AND FABRICATING METHOD THEREOF - A package of an environmentally sensitive electronic device including a first substrate, a second substrate, an environmentally sensitive electronic device, a plurality of barrier structures, and a fill is provided. The second substrate is disposed above the first substrate. The environmentally sensitive electronic device is disposed on the first substrate and located between the first substrate and the second substrate. The barrier structures are disposed between the first substrate and the second substrate, wherein the barrier structures surround the environmental sensitive electronic device, and the water vapor transmission rate of the barrier structures is less than 10 | 10-14-2010 |
20100308406 | THIN FILM TRANSISTOR - A thin film transistor is provided. The thin film transistor includes a gate, at least an inorganic material layer, at least one dielectric layer, a source, a drain, and an active layer. The active layer is located on the substrate. The source and the drain cover a part of the active layer and a part of the substrate. A channel region exists between the source and the drain. The inorganic material layer is filled into the channel region. The dielectric layer at least including an organic material covers the inorganic material, the source and the drain. The gate is disposed on the dielectric layer. | 12-09-2010 |
20120258573 | FABRICATION METHOD OF SUBSTRATE - A fabricating method of a substrate board is provided. The substrate board includes a substrate having rigid areas and flexible areas, and at least an electronic component disposed on the substrate, wherein each of the rigid areas is thicker than the flexible areas. A patterned high-extensive material may be additionally disposed on the substrate to improve reliability thereof. The rigid areas and the flexible areas may be formed by molds or cutters. By using an above structure, the electronic component is less affected when the substrate is under stress, so that good characteristics are maintained. | 10-11-2012 |