Patent application number | Description | Published |
20080241670 | Electrolyte for lithium ion rechargeable battery and lithium rechargeable battery including the same - An electrolyte for a lithium ion rechargeable battery, including a lithium salt, a non-aqueous organic solvent, a dihalogenated ethylene carbonate, and a halogenated ethylene carbonate. The electrolyte may include about 0.01 to about 2 weight % of the dihalogenated ethylene carbonate, and the electrolyte may include about 0.1 to about 10 weight % of the halogenated ethylene carbonate. | 10-02-2008 |
20080241700 | Electrolyte for lithium rechargeable battery and lithium rechargeable battery comprising the same - An electrolyte for the lithium rechargeable battery including non-aqueous organic solvent, fluoroethylene carbonate, and halogen-substituted benzene phenyl ether, and the lithium rechargeable battery comprising the same. The lithium rechargeable battery can improve the overcharging property of the increase of temperature and voltage when overcharging the lithium rechargeable battery. Additionally, the battery capacity retention ratio can be increased. | 10-02-2008 |
20090291370 | ELECTROLYTE FOR LITHIUM ION SECONDARY BATTERY AND LITHIUM ION SECONDARY BATTERY COMPRISING THE SAME - An electrolyte for a lithium ion secondary battery includes a non-aqueous organic solvent; a lithium salt; and a phosphonitrile fluoride trimer as an additive, and a lithium ion secondary battery comprising the same. The thickness increase rate of a lithium ion secondary battery including the electrolyte is reduced even when the battery is kept at a high temperature. Thus, the thermal stability and durability of the battery are prominently improved. The durability of the battery can be further improved by including a vinylene carbonate or ethylene carbonate group compound in the electrolyte. | 11-26-2009 |
20090305145 | ELECTROLYTE FOR LITHIUM ION SECONDARY BATTERY AND LITHIUM ION SECONDARY BATTERY COMPRISING THE SAME - An electrolyte for a lithium ion secondary battery includes a non-aqueous organic solvent; lithium salt; and difluoro oxalato borate and fluoro ethylene carbonate (FEC). The capacity retention property and durability of a lithium ion secondary battery including the electrolyte is excellent even when the battery is left at a high temperature. | 12-10-2009 |
20140205915 | ELECTROLYTE FOR LITHIUM SECONDARY BATTERY AND LITHIUM SECONDARY BATTERY INCLUDING THE SAME - An electrolyte for a lithium secondary battery and a lithium secondary battery including the same are provided. The electrolyte includes a non-aqueous organic solvent, lithium salt, and an additive that is either a dicarboxylic acid anhydride and a halogenated ethylene carbonate or a diglycolic acid anhydride and a halogenated ethylene carbonate. | 07-24-2014 |
20140248542 | ELECTROLYTE FOR LITHIUM ION SECONDARY BATTERY AND LITHIUM ION SECONDARY BATTERY COMPRISING THE SAME - An electrolyte for a lithium ion secondary battery includes a non-aqueous organic solvent; a lithium salt; and a phosphonitrile fluoride trimer as an additive, and a lithium ion secondary battery comprising the same. The thickness increase rate of a lithium ion secondary battery including the electrolyte is reduced even when the battery is kept at a high temperature. Thus, the thermal stability and durability of the battery are prominently improved. The durability of the battery can be further improved by including a vinylene carbonate or ethylene carbonate group compound in the electrolyte. | 09-04-2014 |
Patent application number | Description | Published |
20150206955 | METHODS OF SELECTIVELY GROWING SOURCE/DRAIN REGIONS OF FIN FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING A FIN FIELD EFFECT TRANSISTOR - The inventive concepts provide methods of manufacturing a semiconductor device. The method includes patterning a substrate to form an active pattern, forming a gate pattern intersecting the active pattern, forming a gate spacer on a sidewall of the gate pattern, forming a growth-inhibiting layer covering an upper region of the gate pattern, and forming source/drain electrodes at opposite first and second sides of the gate pattern. | 07-23-2015 |
20150206956 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device includes forming an active pattern protruding from a semiconductor substrate, forming a dummy gate pattern crossing over the active pattern, forming gate spacers on opposite first and second sidewalls of the dummy gate pattern, removing the dummy gate pattern to form a gate region exposing an upper surface and sidewalls of the active pattern between the gate spacers, recessing the upper surface of the active pattern exposed by the gate region to form a channel recess region, forming a channel pattern in the channel recess region by a selective epitaxial growth (SEG) process, and sequentially forming a gate dielectric layer and a gate electrode covering an upper surface and sidewalls of the channel pattern in the gate region. The channel pattern has a lattice constant different from that of the semiconductor substrate. | 07-23-2015 |
20150214370 | Semiconductor Devices and Methods of Fabricating the Same - A semiconductor device includes a substrate provided with an active pattern; a gate structure provided on the active pattern to cross the active pattern; and source/drain regions provided at both sides of the gate structure. The active pattern includes a first region below the gate structure and second regions at both sides of the gate structure. A top surface of each of the second regions is lower than that of the first region. The source/drain regions are provided on the second regions, respectively, and each of the source/drain regions covers partially both sidewalls of each of the second regions. | 07-30-2015 |
20150287711 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device which includes a substrate including a first region and a second region different from the first region, a first active pattern provided on the substrate in the first region, a second active pattern provided on the substrate in the second region, a first gate structure crossing over the first active pattern and a second gate structure crossing over the second active pattern, first source/drain regions disposed on the first active pattern at opposite sides of the first gate structure, second source/drain regions disposed on the second active pattern at opposite sides of the second gate structure, and auxiliary spacers disposed in the first region to cover a lower portion of each of the first source/drain regions. | 10-08-2015 |
20160027902 | METHODS OF FABRICATING A SEMICONDUCTOR DEVICE - Provided is a method of fabricating a semiconductor device. The method includes forming a gate pattern on a semiconductor substrate, injecting amorphization elements into the semiconductor substrate to form an amorphous portion at a side of the gate pattern, removing the amorphous portion to form a recess region, and forming a source/drain pattern in the recess region. When the recess region is formed, an etch rate of the amorphous portion is substantially the same in two different directions (e.g., <111> and any other direction) of the semiconductor substrate. | 01-28-2016 |
20160087104 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - Provided are a semiconductor device and a method of fabricating the same. The device may include an active pattern protruding from a substrate, gate structures crossing the active pattern, and a source/drain region provided between adjacent ones of the gate structures. The source/drain region may include a source/drain epitaxial layer in a recessed region, which is formed in the active pattern between the adjacent ones of the gate structures. Further, an impurity diffusion region may be provided in the active pattern to enclose the source/drain epitaxial layer along inner surfaces of the recessed region. | 03-24-2016 |