Jin-Joo
Jin Joo Choi, Seoul KR
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20090091395 | Microwave signal generator - The microwave signal generator includes a magnetron generating microwave signal. A filter filters a signal that may be a signal of the intrinsic oscillation frequency band of the magnetron, which is fed-back to the magnetron. | 04-09-2009 |
Jin Joo Kim, Daejeon KR
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20160087216 | POLYCYCLIC COMPOUND AND ORGANIC LIGHT EMITTING DEVICE INCLUDING THE SAME - The present specification provides a polycyclic compound and an organic light emitting device including the same. | 03-24-2016 |
Jin Joo Kim, Uiwang-Si KR
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20160025913 | POLARIZING PLATE AND OPTICAL DISPLAY INCLUDING THE SAME - A polarizing plate includes a polarizer; a first retardation film formed on a lower surface of the polarizer and having an in-plane retardation (Ro) at a wavelength of about 550 nm of about 180 nm to about 220 nm; and a second retardation film formed on a lower surface of the first retardation film and having an in-plane retardation (Ro) at a wavelength of about 550 nm of about 50 nm to about 80 nm. The first and second retardation films have thickness direction retardations (Rth) of opposite signs at a wavelength of about 550 nm. An optical display includes the polarizing plate. | 01-28-2016 |
Jin Joo Park, Seoul KR
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20110155204 | WIRE TYPE THIN FILM SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - Disclosed herein is a wire type thin film solar cell, including: a metal wire which is made of any one selected from the group consisting of aluminum (Al), titanium (Ti), chromium (Cr), molybdenum (Mo) and tungsten (W); an N-type layer which is deposited on a circumference of the metal wire and conducts electrons generated from the metal wire; a P-type layer which is deposited on the N-type layer and emits electrons excited by solar light; and a transparent electrode layer which is deposited on the P-type layer. The wire type thin film solar cell can exhibit high photoelectric conversion efficiency compared to conventional flat-plate type thin film solar cells and can be easily manufactured into a highly-dense solar cell module. | 06-30-2011 |
Jin Joo Park, Busan KR
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20150247051 | PVC-Based Metallopolymer Nanocomposites, and Coating Composition and Coating Film Comprising Same - The present invention relates to a PVC-based metallopolymer nanocomposite. The PVC-based metallopolymer nanocomposite includes a core-forming metal ion, a nucleophilic thiol having three mercapto functional groups, and poly(vinyl chloride) (PVC). The present invention also relates to a metallopolymer nanocomposite surface modified with silica that is prepared by grafting the PVC-based metallopolymer nanocomposite with a silane compound. | 09-03-2015 |
Jin-Joo Chung, Seoul KR
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20110013092 | APPARATUS AND METHOD OF SWITCHING CHANNEL UNDER WIRELESS NETWORK CIRCUMSTANCES - An apparatus and method of switching a channel under wireless network circumstances is provided, which can secure network resources by performing channel switching and channel bonding with an adjacent network if the network resources of the currently participating network are insufficient in performing wireless data communications. The apparatus includes a message analysis unit analyzing at least one received channel information message and confirming whether a channel corresponding to the channel information message and a channel adjacent to the channel are usable, a channel switching unit performing a channel switching with a usable target channel among the channels with reference to whether the confirmed channel and the adjacent channels are usable, in accordance with a result of determining whether network resources of a currently used channel are insufficient, and a channel bonding unit performing a channel bonding between the channel-switched target channel and the adjacent channels. | 01-20-2011 |
Jin-Joo Kim, Incheon KR
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20100328750 | HIGH-SPEED OPTICAL MODULATOR AND METHOD OF MODULATING LIGHT BY USING THE SAME - Provided are a high-speed optical modulator and a method of modulating light by using the same. The optical modulator includes first and second resonance cavities that are sequentially stacked on a transparent substrate, wherein the first and second resonance cavities each include an electric-optical layer. According to the method, first and second voltages having different sizes are simultaneously applied respectively to the first and second resonance cavities, and then for the other configuration of the modulator mutually interchanged voltages are applied. | 12-30-2010 |
20120300038 | PHOTONIC CRYSTAL TYPE LIGHT MODULATOR AND 3D IMAGE ACQUISITION APPARATUS EMPLOYING THE SAME - A photonic crystal type light modulator is provided. The photonic crystal type light modulator includes: a substrate; a first electrode disposed on the substrate; an active layer disposed on the first electrode, where an optical characteristic of the active layer changes according to application of an electric field; a second electrode disposed on the active layer; and a photonic crystal layer disposed on the second electrode and comprising a 2D grating. | 11-29-2012 |
Jin-Joo Kim, Seoul KR
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20100295113 | SEMICONDUCTOR DEVICES COMPRISING A PLURALITY OF GATE STRUCTURES - Semiconductor devices including a plurality of gate structures disposed on a semiconductor substrate are provided. Each of the gate structures includes a tunnel dielectric layer, a floating gate, an inter-gate dielectric layer, a control gate, and a mask layer. Liners cover opposing sidewalls of adjacent floating gates. Spacers are disposed on the liners, the spacers protruding from opposing sidewalls of adjacent ones of the gate structures, and a top of each of the spacers is disposed below a top of a corresponding one of the gate structures. The liners define sidewalls of respective air gaps and the spacers define tops of the respective air gaps. | 11-25-2010 |
20110163367 | Semiconductor Devices Comprising a Plurality of Gate Structures - Semiconductor devices are provided. The semiconductor devices may include a plurality of gate structures disposed on a semiconductor substrate, each of the gate structures including a floating gate, an inter-gate dielectric layer, and a control gate. The semiconductor devices may also include liners on opposing sidewalls of adjacent ones of the gate structures. The liners may define a gap. A first width of the gap may be less than a second width of the gap. | 07-07-2011 |