Patent application number | Description | Published |
20090273882 | CAPACITOR AND METHOD FOR FABRICATING THE SAME - A capacitor includes a first electrode, a dielectric layer, and a second electrode. The capacitor also includes a buffer layer formed over at least one of an interface between the first electrode and the dielectric layer and an interface between the dielectric layer and the second electrode, wherein the buffer layer includes a compound of a metal element from electrode materials of one of the first and second electrodes and a metal element from materials included in the dielectric layer. | 11-05-2009 |
20100096609 | PHASE CHANGE MEMORY DEVICE HAVING A LAYERED PHASE CHANGE LAYER COMPOSED OF MULTIPLE PHASE CHANGE MATERIALS AND METHOD FOR MANUFACTURING THE SAME - A phase change memory device that has a layered phase change layer composed of multiple phase change materials is presented. The device includes a semiconductor substrate, an interlayer dielectric layer, a high-temperature crystallization phase change, a low-temperature crystallization phase change layer, and an upper electrode. The interlayer dielectric layer formed on the semiconductor substrate and the high-temperature crystallization phase change layer is formed on the interlayer dielectric layer. The low-temperature crystallization phase change layer is formed over the high-temperature crystallization phase change layer. The upper electrode is formed over the low-temperature crystallization phase change layer. An optional diffusion barrier may be interposed between the two phase change layers. | 04-22-2010 |
20110143477 | METHOD OF MANUFACTURING A PHASE CHANGE MEMORY DEVICE USING A CROSS PATTERNING TECHNIQUE - A method of manufacturing a phase change memory device is provided. A first insulating layer having a plurality of metal word lines spaced apart at a constant distance is formed on a semiconductor substrate. A plurality of line structures having a barrier metal layer, a polysilicon layer and a hard mask layer are formed to be overlaid on the plurality of metal word lines. A second insulating layer is formed between the line structures. Cross patterns are formed by etching the hard mask layers and the polysilicon layers of the line structures using mask patterns crossed with the metal word lines. A third insulating layer is buried within spaces between the cross patterns. Self-aligned phase change contact holes are formed and at the same time, diode patterns formed of remnant polysilicon layers are formed by selectively removing the hard mask layers constituting the cross patterns. | 06-16-2011 |
20130280880 | PHASE-CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A phase-change memory device with improved deposition characteristic and a method of fabricating the same are provided. The phase-change memory device includes a semiconductor substrate having a phase-change area, a first material-rich first phase-change layer forming an inner surface of the phase-change area and comprised of a hetero compound of the first material and a second material, and a second phase-change layer formed on a surface of the first phase-change layer to fill the phase-change area. | 10-24-2013 |
20140054752 | SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF - A semiconductor memory device and a fabrication method thereof capable of improving electric contact characteristic between an access device and a lower electrode are provided. The semiconductor memory device includes an access device formed in a pillar shape on a semiconductor substrate, a first conductive layer formed over the access device, a protection layer formed on an edge of the first conductive layer to a predetermined thickness, and a lower electrode connected to the first conductive layer. | 02-27-2014 |
20140242773 | PHASE CHANGE MEMORY DEVICE HAVING SELF-ALIGNED BOTTOM ELECTRODE AND FABRICATION METHOD THEREOF - A semiconductor memory device and a fabrication method thereof capable of improving electric contact characteristic between an access device and a lower electrode are provided. The semiconductor memory device includes an access device formed in a pillar shape on a semiconductor substrate, a first conductive layer formed over the access device, a protection layer formed on an edge of the first conductive layer to a predetermined thickness, and a lower electrode connected to the first conductive layer. | 08-28-2014 |
20140301137 | PHASE-CHANGE MEMORY DEVICE HAVING PHASE-CHANGE REGION DIVIDED INTO MULTI LAYERS AND OPERATING METHOD THEREOF - A phase-change memory device including a multi-level cell and an operation method thereof are provided. The device includes a first phase-change material layer to which a current is provided from a heating electrode, and a second phase-change material layer formed with continuity to the first phase-change material layer and having a different width from the first phase-change material layer, and to which a current is provided from the heating electrode. The second phase-change material layer includes a material having smaller resistivity and a lower crystallization rate than the first phase-change material layer. | 10-09-2014 |
20150132916 | METHOD FOR FABRICATING CAPACITOR - A method for fabricating a capacitor includes: forming a storage node contact plug over a substrate; forming an insulation layer having an opening exposing a surface of the storage node contact plug over the storage contact plug; forming a conductive layer for a storage node over the insulation layer and the exposed surface of the storage node contact plug through two steps performed at different temperatures; performing an isolation process to isolate parts of the conductive layer; and sequentially forming a dielectric layer and a plate electrode over the isolated conductive layer. | 05-14-2015 |