Jifeng
Jifeng Chen, Morgantown, WV US
| Patent application number | Description | Published |
|---|---|---|
| 20090250345 | Microfluidic electroelution devices & processes - A microfluidic device for electroelution with sample collection decoupled from the electrophoretic field can generally comprise a channel having a first fluid pathway in fluid communication with a second fluid pathway, the first fluid pathway can comprise a first port in fluid communication with a second port, and a receptacle intermediate the ports, the second fluid pathway can comprise an inlet in fluid communication with an outlet, the first and second ports can be associated with first and second electrodes, respectively, such that the electrodes can create an electrophoretic field across the receptacle, and the channel can be configured to create a pressure drop from the first fluid pathway towards the second fluid pathway that encourages the electroeluted sample to flow towards the second fluid pathway. | 10-08-2009 |
| 20090250347 | MICROFLUIDIC DEVICES & PROCESSES FOR ELECTROKINETIC TRANSPORT - A microfluidic device for collecting a sample during electrokinetic transport may generally comprise a first channel intersecting a second channel to form a junction; a receptacle in fluid communication with the first channel to receive therein a sample comprising at least one analyte; a pair of electrodes associated with the first channel to create an electrophoretic field effective to electrokinetically transport the at least one analyte, wherein the second channel is substantially field-free of the electrophoretic field; and a first reservoir and a second reservoir in fluid communication with the first channel to create a pressure gradient between the channels effective to transport the at least one analyte from the first channel to the second channel when fluid is present in at least one of the reservoirs and the voltage is substantially simultaneously applied along the first channel. | 10-08-2009 |
Jifeng Chen, Willimantic, CT US
| Patent application number | Description | Published |
|---|---|---|
| 20130345997 | INTEGRATED TIME DEPENDENT DIELECTRIC BREAKDOWN RELIABILITY TESTING - Methods for reliability testing include applying a stress voltage to a device under test (DUT); measuring a leakage current across the DUT; triggering measurement of optical emissions from the DUT based on the timing of the measurement of the leakage current; and correlating measurements of the leakage current with measurements of the optical emissions to determine a time and location of a defect occurrence within the DUT by locating instances of increased noise in the leakage current that correspond in time with instances of increased optical emissions. | 12-26-2013 |
| 20140207396 | INTEGRATED TIME DEPENDENT DIELECTRIC BREAKDOWN RELIABILITY TESTING - Systems for reliability testing include a picometer configured to measure a leakage current across a device under test (DUT); a camera configured to measure optical emissions from the DUT based on a timing of the measurement of the leakage current; and a test system configured to apply a stress voltage to the DUT and to correlate the leakage current with the optical emissions using a processor to determine a time and location of a defect occurrence within the DUT by locating instances of increased noise in the leakage current that correspond in time with instances of increased optical emissions. | 07-24-2014 |
Jifeng Feng, Shanghai CN
| Patent application number | Description | Published |
|---|---|---|
| 20150371792 | ELECTRICAL TRANSFER SWITCH SYSTEM - A system including an automatic transfer switch configured to selectively route power from a first power source or a second power source to a load, comprising a switch configured to be moved between a first position and a second position, a first set of electrical contacts configured to route the power from the first power source when the switch is in the first position, a second set of electrical contacts configured to route the power from the second power source when the switch is in the second position, and a first arc chute housing configured to substantially enclose the first set of electrical contacts when the switch is in the first position. | 12-24-2015 |
Jifeng Gu, Shanghai CN
| Patent application number | Description | Published |
|---|---|---|
| 20160054127 | Short-path fuzzy navigation method - A short-path fuzzy navigation method is provided. The short-path fuzzy navigation method has steps of: a navigation apparatus planning a default path having a plurality of intersections thereon; and the navigation apparatus starting a short-path fuzzy navigation procedure. The short-path fuzzy navigation procedure has steps of: selecting two of the intersections as a starting point and a destination; calculating a plurality of possible paths between the starting point and the destination; for each of the possible paths, determining whether the possible path satisfies predetermined criteria; selecting each possible path which satisfies the predetermined criteria as a candidate path; sending a notice of a driving direction toward each candidate path before reaching the starting point; and terminating the short-path fuzzy navigation procedure when reaching the destination. | 02-25-2016 |
Jifeng Li, Kawasaki JP
| Patent application number | Description | Published |
|---|---|---|
| 20130104008 | Error-Correcting Encoding Apparatus - An apparatus for encoding source data, that includes a first encoder configured to encode the source data to produce first additional data; and a randomizing unit configured to randomize the source data to produce randomized data; and a second encoder configured to encode the randomized data to produce second additional data; and a selector configured to select a number of bits from the first and second additional data to produce first selected data and second selected data, wherein the number of selected bits is selected based upon a data length of an output sequence determined by a transmission frame format, and wherein the data length of the output sequence is variable. | 04-25-2013 |
Jifeng Li, Beijing CN
| Patent application number | Description | Published |
|---|---|---|
| 20140380477 | METHODS AND DEVICES FOR IDENTIFYING TAMPERED WEBPAGE AND INENTIFYING HIJACKED WEB ADDRESS - Disclosed are methods and devices for identifying a tampered webpage and identifying a hijacked web address. The method for identifying a tampered webpage comprises: by simulating a mode of inputting a URL in an address bar of a browser, initiating a request to access a target webpage, and determining obtained page content as the first page content; by simulating a mode of jumping from a link, initiating a request to access the target webpage, and determining obtained page content as the second page content; comparing the first page content with the second page content to obtain a comparison result; and identifying, according to the comparison result, whether the target webpage is a tampered webpage. The present invention can effectively identify whether a target webpage is a tampered webpage, so that an effective means for determining whether a target webpage is tampered is provided to a user and computer services. | 12-25-2014 |
| 20150248520 | Method and Apparatus for Physical-Aware Hold Violation Fixing - The present invention discloses a method for fixing hold time violations in circuits. The method comprises: creating a topology diagram of the circuit with a branch indicating a signal path where the hold time violation occurs in the circuit, and a node on the branch indicating a port of an element where the hold time violation occurs; dividing the circuit into a plurality of regions; and placing a hold time correction element selectively in a region corresponding to the node in the topology diagram to fix the hold time violation thereof, according to a circuit element density of the region corresponding to the node in the topology diagram. With this method there will be no new element in a region whose circuit element density is excessively large, and it is unnecessary to move an element which has been placed in the circuit and an input/output pin thereof. | 09-03-2015 |
Jifeng Liu, Lausanne CH
| Patent application number | Description | Published |
|---|---|---|
| 20110031134 | ELECTROCHEMICAL ANTIOXIDANT SENSORS BASED ON METALLIC OXIDE MODIFIED ELECTRODES FOR THE GENERATION OF HYDROXYL RADICALS AND THE SUBSEQUENT MEASUREMENT OF ANTIOXIDANT ACTIVITIES - The present invention relates to a new antioxidant sensor based on metallic or metallic oxide modified electrode and its associated method for electrochemically generating hydroxyl radicals and their subsequent use for the electrochemical measurement of antioxidant activities based on hydroxyl radical scavenging properties of the tested sample. | 02-10-2011 |
Jifeng Liu, Winchester, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20090130097 | Quinazolinone Compounds and Methods of Use Thereof - The present invention relates to quinazolinone compounds, and methods of preparation of these compounds. The present invention also relates to pharmaceutical compositions comprising the quinazolinone compounds. The present invention provides methods of treating a cell proliferative disorder, such as a cancer, by administering to a subject in need thereof a therapeutically effective amount of a quinazolinone compound of the present invention | 05-21-2009 |
| 20110217300 | Quinazolinone Compounds and Methods of Use Thereof - The present invention relates to quinazolinone compounds, and methods of preparation of these compounds. The present invention also relates to pharmaceutical compositions comprising the quinazolinone compounds. The present invention provides methods of treating a cell proliferative disorder, such as a cancer, by administering to a subject in need thereof a therapeutically effective amount of a quinazolinone compound of the present invention | 09-08-2011 |
| 20110301160 | Inhibitors of P38 and Methods of Using the Same - In general, the present invention relates to compounds capable of inhibiting p38 in vivo or in vitro, and methods for treating conditions associated with p38 activity or cytokine activity. | 12-08-2011 |
| 20120252763 | NOVEL GROUP OF STAT3 PATHWAY INHIBITORS AND CANCER STEM CELL PATHWAY INHIBITORS - The present invention relates to the use of a novel class of cancer stem cell pathway (CSCP) inhibitors; to methods of using such compounds to treat refractory, recurrent, or metastatic cancers; to methods of selective killing cancer cells by using such compounds with specific administration regimen; to methods of targeting cancer stem cells by inhibiting Stat3 pathway; to methods of using novel compounds in the treatment of conditions or disorders in a mammal related to aberrant Stat3 pathway activity; and to processes for preparing such compounds and intermediates thereof, and to the pharmaceutical composition of relevant compounds, and to the specific methods of administration of these compounds. | 10-04-2012 |
Jifeng Liu, Hanover, NH US
| Patent application number | Description | Published |
|---|---|---|
| 20120025195 | Confined Lateral Growth of Crystalline Material - In a structure for crystalline material growth, there is provided a lower growth confinement layer and an upper growth confinement layer that is disposed above and vertically separated from the lower growth confinement layer. A lateral growth channel is provided between the upper and lower growth confinement layers, and is characterized by a height that is defined by the vertical separation between the upper and lower growth confinement layers. A growth seed is disposed at a site in the lateral growth channel for initiating crystalline material growth in the channel. A growth channel outlet is included for providing formed crystalline material from the growth channel. With this growth confinement structure, crystalline material can be grown from the growth seed to the lateral growth channel outlet. | 02-02-2012 |
| 20120252192 | METHOD OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON - Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays | 10-04-2012 |
| 20130186455 | METHOD OF FORMING SINGLE-CRYSTAL SEMICONDUCTOR LAYERS AND PHOTOVALTAIC CELL THEREON - A method for forming single crystal or large-crystal-grain thin-film layers deposits a thin-film amorphous, nanocrystalline, microcrystalline, or polycrystalline layer, and laser-heats a seed spot having size on the order of a critical nucleation size of the thin-film layer. The single-crystal seed spot is extended into a single-crystal seed line by laser-heating one or more crystallization zones adjacent to the seed spot and drawing the zone across the thin-film layer. The single-crystal seed line is extended across the thin-film material layer into a single-crystal layer by laser-heating an adjacent linear crystallization zone and drawing the crystallization zone across the thin-film layer. Photovoltaic cells may be formed in or on the single-crystal layer. Tandem photovoltaic devices may be formed using one or several iterations of the method. The method may also be used to form single-crystal semiconductor thin-film transistors, such as for display devices, or to form single-crystal superconductor layers. | 07-25-2013 |
| 20140090686 | METHODS AND APPARATUS FOR CONCENTRATING PHOTOVOLTAICS - Provided in one embodiment is an article, comprising: a substrate comprising silicon; and a plurality of solar cells disposed over the substrate, wherein at least one of the plurality of the solar cells comprises one of: (i) a first semiconductor layer disposed over the substrate, the first layer comprising at least one semiconductor material; and (ii) a first Ge-containing layer disposed over the substrate, the first layer comprising a Ge-containing material, and a second layer disposed over the first layer, the second layer comprising at least one semiconductor material. At least some of the solar cells may comprise semiconductor materials of different bandgap values. | 04-03-2014 |
| 20140254620 | High-Concentration Active Doping in Semiconductors and Semiconductor Devices Produced by Such Doping - In a method of forming a photonic device, a first silicon electrode is formed, and then a germanium active layer is formed on the first silicon electrode while including n-type dopant atoms in the germanium layer, during formation of the layer, to produce a background electrical dopant concentration that is greater than an intrinsic dopant concentration of germanium. A second silicon electrode is then formed on a surface of the germanium active layer. The formed germanium active layer is doped with additional dopant for supporting an electrically-pumped guided mode as a laser gain medium with an electrically-activated n-type electrical dopant concentration that is greater than the background dopant concentration to overcome electrical losses of the photonic device. | 09-11-2014 |
| 20140299047 | METHOD OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON - Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays | 10-09-2014 |
| 20140331915 | METHOD OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON - Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays | 11-13-2014 |
| 20140332076 | SYSTEMS AND METHODS USING METAL NANOSTRUCTURES IN SPECTRALLY SELECTIVE ABSORBERS - Solution-processed Ni nanochain-SiO | 11-13-2014 |
| 20150323819 | ELECTRO-OPTIC MODULATORS - Electro-optic modulators are disclosed. An electro-optic modulator includes an optical ring resonator, an optical waveguide, and a cavity of electro-optic material. The waveguide has a first portion positioned adjacent the resonator to create a first coupling region and a second portion positioned adjacent the resonator to create a second coupling region. The cavity of electro-optic material is embedded within the waveguide between the first portion and the second portion. A method of optical modulation includes the steps of receiving light into an optical waveguide, coupling a portion of the light from the waveguide into an optical ring resonator at a first coupling region between the waveguide and the resonator, transmitting the light remaining in the waveguide into a cavity of electro-optic material embedded within the waveguide, and transmitting the light from the cavity to a second coupling region between the waveguide and the resonator. | 11-12-2015 |
| 20160024687 | Confined Lateral Growth of Crystalline Germanium Material - There is provided a substrate with a lower growth confinement layer disposed thereon. An upper growth confinement layer is disposed above and vertically separated from the lower growth confinement layer. A planar lateral growth channel is provided between the upper and lower growth confinement layers with a vertical separation between the layers along the lateral growth channel. A germanium material growth seed of amorphous silicon is disposed at a site adjacent to the lateral growth channel. The upper growth confinement layer and the lower growth confinement layer each prohibits crystalline germanium material nucleation on the upper and lower growth confinement layers during exposure to GeH | 01-28-2016 |
| 20160027950 | Methods Of Low-Temperature Fabrication Of Crystalline Semiconductor Alloy On Amorphous Substrate - Methods are discussed for producing single-crystal shapes on amorphous materials. A first method deposits a layer of Germanium-Tin (GeSn) alloy comprising between three and sixteen atomic-percent tin on material incapable of seeding crystal formation, the layer is photolithographically defined into a shape having a point having radius less than 100 nanometers; and the shape is annealed by heating to a temperature below 450 degrees Celsius. A second method also photolithographically defines a shape on a layer of GeSn, then uses a laser to heat and crystalize seed spot on the shape; and anneals the shape by heating and thereby crystalizing additional GeSn alloy of the shape. In embodiments, the crystalized GeSn serves to seed InGaP and/or InGaAs layers that may serve together with the GeSn as layers of a tandem photovoltaic cell. | 01-28-2016 |
| 20160035916 | Multifunctional Nanostructured Metal-Rich Metal Oxides - A transparent conductive oxide (TCO) material includes a metal-rich metal oxide having an average formula (M1, M2 . . . Mn) | 02-04-2016 |
Jifeng Liu, Beijing CN
| Patent application number | Description | Published |
|---|---|---|
| 20140121888 | METHOD, SERVER AND SYSTEM FOR VEHICLE DIAGNOSIS - A method, a server and a system for vehicle diagnosis are provided. The method for vehicle diagnosis comprises: a diagnosis server remotely receiving a fault code sent by a vehicle-side terminal and recording a sending device identifier; analyzing the received fault code to obtain a fault diagnosis result; pushing the fault diagnosis result to a corresponding vehicle owner according to the sending device identifier. By adopting the above technical solution, the vehicle owner can know fault situation of the vehicle in time without moving the vehicle to a certain maintenance site, and further decide whether to make a repair or maintenance according to the obtained fault situation, which not only reduces the unnecessary time waste but also effectively reduces security hidden trouble and reduces accident occurrence probability. | 05-01-2014 |
Jifeng Qin, Zhuhai Guangdong CN
| Patent application number | Description | Published |
|---|---|---|
| 20140292472 | Electric Device - An electric device includes an electric element having an element terminal and a conductive spring being deflected. The spring is electrically coupled to the element terminal by a fusible joint. A switch includes a first monitor terminal and a second monitor terminal. The state of the switch is changeable between a first connection state, where the first monitor terminal and the second monitor terminal are electrically coupled, and a second connection state, where the first monitor terminal and the second monitor terminal are electrically decoupled. When the joint fuses, the spring relaxes, thereby decoupling the spring and the element terminal and changing the state of the switch. | 10-02-2014 |
Jifeng Tan, Beijing CN
| Patent application number | Description | Published |
|---|---|---|
| 20150362779 | Liquid Crystal Display Device and Its Manufacturing Method - The present invention relates to the field of display technology, provides a liquid crystal display device and its manufacturing method. The liquid crystal display device includes a liquid crystal layer, a color film layer and a polarizer arranged at one side of the liquid crystal layer, and a reflective layer arranged at the other side of the liquid crystal layer. The color film layer includes a plurality of pixels consisting of red, green and blue subpixels. The liquid crystal display device further includes a compensating module which includes a compensating unit corresponding to the plurality of subpixels, the compensating unit is configured to adjust phase difference offset of light rays of the corresponding subpixels when the light rays pass through the compensating unit, so that a phase difference between the light rays passing through the corresponding subpixels in a normally-black mode and/or a normally-white mode is within a predetermined range. | 12-17-2015 |
Jifeng Wang, Fushun, Liaoning CN
| Patent application number | Description | Published |
|---|---|---|
| 20150306579 | A HYDROTREATING CATALYST, PRODUCTION AND USE THEREOF - This invention relates to a hydrotreating catalyst suitable for heavy distillate oil hydrodesulfurization, production and use thereof. The present hydrotreating catalyst exhibits significantly improved heavy distillate oil (deep) hydrodesulfurization activity. | 10-29-2015 |
Jifeng Zhang, Yuyao CN
| Patent application number | Description | Published |
|---|---|---|
| 20150267902 | Portable lighting device - A portable lighting device includes a light housing having a housing body defining a receiving cavity, a light source supported in the receiving cavity of the housing body, and a direction adjusting arrangement which is rotatably mounted with the housing body in such a manner that a projecting direction of the light source is capable of being adjusted by means of a relative movement between the housing body and the direction adjusting arrangement. | 09-24-2015 |
Jifeng Zhou, Shenzhen CN
| Patent application number | Description | Published |
|---|---|---|
| 20140113140 | COATED COBALT POWDER AND PREPARATION METHOD THEREOF - Provided are a coated cobalt powder and a preparation method thereof, the coated cobalt powder consisting of cobalt powder, and paraffin wax, polyethylene glycol or polyethylene coated on the outer surface of the cobalt powder. Using the coated cobalt powder to replace traditional cobalt powder as the raw material for preparing hard alloys, the dusts generated during production can be reduced, and the environment in a production shop can be improved; simultaneously, the paraffin wax, the polyethylene glycol or the polyethylene coated on the surface of the cobalt powder can effectively prevent the cobalt powder from being oxidized by the oxygen or water vapor in the air, thus improving the quality of the cobalt powder. The preparation process of the coated cobalt powder is free from contamination and the coated cobalt powder is suitable for industrialized production. | 04-24-2014 |
Jifeng Zhu, Hubei CN
| Patent application number | Description | Published |
|---|---|---|
| 20160043058 | SEMICONDUCTOR COOLING STRUCTURE AND METHOD IN A MIXED BONDING PROCESS - The invention provides a semiconductor cooling structure and method in a mixed bonding process, and comprises: providing two wafers which require to be treated by a mixed bonding process, each of the wafers being provided with several metallic device structure layers therein; a heat dissipation layer is set in at least one of the wafer, the heat dissipation layer is arranged in the free area above at least one of the metallic device structure layers, and the heat dissipation layer connects to the adjacent metallic device structure layer which is adjacent to and below the heat dissipation layer; wherein material of each of the heat dissipation layers is good conductors of heat. The invention can make heat generated during bonding process transfer and distribute evenly. | 02-11-2016 |
| 20160093663 | PREPARATION PROCESS OF IMAGE SENSORS - The invention relates to the field of semiconductor, more particularly, to a preparation process of image sensors, comprising: Step S | 03-31-2016 |