Patent application number | Description | Published |
20090197140 | FUEL CELL BIPOLAR PLATE, PROCESS FOR PRODUCING THE SAME, AND FUEL CELL INCLUDING THE BIPOLAR PLATE - A fuel cell bipolar plate that while retaining its mechanical strength, has its electrical conductivity enhanced; a process for producing the same; and a fuel cell including the bipolar plate. There is provided a fuel cell bipolar plate comprising laminated molded item formed by a sheet-shaped molding material, wherein the sheet-shaped molding material contains a resin and a carbon material, and wherein the laminated molded item has a laminate structure of, arranged in sequence, surface layer C/inner layer B/central layer A/inner layer B′/surface layer C′, and wherein each of the central layer A, inner layer B, inner layer B′, surface layer C and surface layer C′ consists of a single layer or multilayer of the sheet-shaped molding material, and wherein when the carbon material content of central layer A is referred to as a, the carbon material content of inner layer B as b, the carbon material content of inner layer B′ as b′, the carbon material content of surface layer C as c and the carbon material content of surface layer C′ as c′, there are satisfied the relationships 55≦a≦85, 55≦c≦85, 55≦c′≦85, 10≦a−b≦30, 10≦c−b≦30, 10≦a−b′≦30 and 10≦c′−b′≦30 (the unit of each of a, b, b′, c and c′ is % by volume). | 08-06-2009 |
Patent application number | Description | Published |
20120307739 | SPATIAL MULTIPLEXING WIRELESS TRANSMISSION SYSTEM, SPATIAL MULTIPLEXING WIRELESS TRANSMISSION METHOD AND COMPUTER PROGRAM - A spatial multiplexing wireless transmission system is formed by a base station, and by a plurality of terminal stations that are provided with a plurality of antennas. The base station is provided with an information signal generating portion, a control signal generating portion, a transmission frame generating portion, a multiple beamforming portion, a transmission/reception switching portion, a reception signal processing portion, a propagation environment estimating portion, and an antenna information generating portion. At least one of the terminal stations is provided with a transmission/reception switching portion, a reception signal processing portion, a decoding portion, an antenna information extracting portion, an antenna information generating portion, an transmitting portion, a battery, a remaining battery detecting portion, a transmission request extracting portion, and a propagation environment estimating portion. | 12-06-2012 |
Patent application number | Description | Published |
20090292945 | DISK ARRAY APPARATUS AND METHOD FOR CONTROLLING THE SAME - A disk array apparatus capable of reducing a disk drive fault rate where a time-out failure has occurred. The disk array apparatus includes a plurality of disk drives, and a control unit for performing data input/output processing of the disk drives in response to a data input/output request from a host system. The control unit includes: a memory for storing control information for specifying a failure of at least one of the disk drives, and failure information of the faulty disk drive, a circuit for specifying, from the failure information, the disk drive in which a time-out failure has occurred, and issuing an instruction to retry a control command to the disk drive, and a circuit for outputting a control signal to the faulty disk drive in order to hard reset the disk drive if the disk drive does not recover from the failure. | 11-26-2009 |
20110078379 | STORAGE CONTROL UNIT AND DATA MANAGEMENT METHOD - An I/O processor determines whether or not the amount of dirty data on a cache memory exceeds a threshold value and, if the determination is that this threshold value has been exceeded, writes a portion of the dirty data of the cache memory to a storage device. If a power source monitoring and control unit detects a voltage abnormality of the supplied power, the power monitoring and control unit maintains supply of power using power from a battery, so that a processor receives supply of power from the battery and saves the dirty data stored on the cache memory to a non-volatile memory. | 03-31-2011 |
20110154165 | STORAGE APPARATUS AND DATA TRANSFER METHOD - A storage apparatus includes: a host control unit for sending/receiving data to/from a host server; a drive control unit for sending/receiving the data to/from a storage device; a cache memory for temporarily storing the data sent and received between the host control unit and the drive control unit; a switch for switching between a transfer source and a transfer destination when transferring the data by selecting the transfer source and the transfer destination from among the host control unit, the cache memory, and the drive control unit; and a controller for controlling the host control unit, the drive control unit, and the switch; wherein processing for generating an error check code for the data and error check processing using the error check code are executed by the switch or are distributed among and executed by the host control unit, the drive control unit, the switch, and the controller. | 06-23-2011 |
20110161728 | DISK ARRAY APPARATUS AND METHOD FOR CONTROLLING THE SAME - A disk array apparatus capable of reducing a disk drive fault rate where a time-out failure has occurred. The disk array apparatus includes a plurality of disk drives, and a control unit for performing data input/output processing of the disk drives in response to a data input/output request from a host system. The control unit includes: a memory for storing control information for specifying a failure of at least one of the disk drives, and failure information of the faulty disk drive, a circuit for specifying, from the failure information, the disk drive in which a time-out failure has occurred, and issuing an instruction to retry a control command to the disk drive, and a circuit for outputting a control signal to the faulty disk drive in order to hard reset the disk drive if the disk drive does not recover from the failure. | 06-30-2011 |
20120260034 | DISK ARRAY APPARATUS AND CONTROL METHOD THEREOF - Proposed are a disk array apparatus and a control method thereof which facilitate data processing such as write processing and read processing even if the block sizes handled by a host computer are different. | 10-11-2012 |
Patent application number | Description | Published |
20110097511 | DEPOSITION APPARATUS AND MANUFACTURING METHOD OF THIN FILM DEVICE - [Object] To provide a deposition apparatus | 04-28-2011 |
20110100806 | BIAS SPUTTERING DEVICE - [Object] To provide a bias sputtering device having a self-revolving mechanism capable of reducing generation of foreign substances adhered to film formation surfaces. | 05-05-2011 |
20130081942 | Thin Film Formation Method and Thin Film Formation Apparatus - A thin film formation method is provided, by which needless film formation due to trial film formation is omitted and film formation efficiency can be improved. This invention is a method for sputtering targets to form a film A having an intended film thickness of T | 04-04-2013 |
20130180851 | MAGNETIC FIELD GENERATOR, MAGNETRON CATHODE AND SPATTERING APPARATUS - A magnetic field generator arranged behind a target and for generating a magnetic field on a front surface of the target based on magnetic force lines can include a ring-shaped outer magnetic body having a pole axis in a parallel direction (X-direction) with respect to the target surface, a center magnetic body arranged on an inner side of the outer magnetic body and having a pole axis in a parallel direction (X-direction) with the direction of the pole axis of the outer magnetic body, a yoke plate for supporting the outer magnetic body and the center magnetic body from behind, and a magnetic permeable plate for changing a magnetic field distribution of the front surface of the target. The magnetic permeable plate is arranged so as to be supported by the yoke plate from behind. | 07-18-2013 |
20140205762 | METHOD FOR DEPOSITING FILM AND FILM DEPOSITION SYSTEM - A method for depositing a film includes depositing an oil repellent film having an enhanced abrasion resistance properties and which is suitable for practical use. A film deposition system, wherein a substrate holder having a substrate holding surface for holding a plurality of substrates is provided rotatably to inside a vacuum container, can include an ion source provided to inside the vacuum container to have a configuration and in an arrangement and/or a direction, by which an ion beam can be irradiated only to a partial region of the substrate holding surface. A deposition source can be provided to inside the vacuum container such that a film deposition material of an oil repellent film can be supplied to the whole region of the substrate holding surface. An operation of the ion source can be stopped before starting operation of the deposition source. | 07-24-2014 |
20140205844 | Method for Depositing Silicon Carbide Film - A film deposition method of a silicon carbide thin film having a high transmissivity and high film strength applicable for optical use purposes is provided. The film can be formed safely and efficiently in a short time and on a low heat resistance substrate. The method can include depositing a silicon carbide thin film on a moving substrate by using a film formation apparatus configured such that a reaction process region and film formation process regions are arranged spatially separated from one another in a vacuum container. Silicon targets can be sputtered in one region and carbon targets can be sputtered in another region. Thereby, an interlayer thin film containing silicon and carbon is formed on the substrate. Next, in another region, the interlayer thin film can be exposed to plasma generated in an atmosphere of a mixed gas including inert gas and hydrogen. | 07-24-2014 |
20140356601 | Translucent Hard Thin Film - A translucent hard thin film having high transmissivity and film strength is provided. The translucent hard thin film can be composed of a laminated film formed on a substrate surface, wherein the laminated film has a superlattice structure obtained by stacking a plurality of SiO | 12-04-2014 |
Patent application number | Description | Published |
20110111581 | DEPOSITION APPARATUS AND MANUFACTURING METHOD OF THIN FILM DEVICE - [Object] To provide a deposition apparatus | 05-12-2011 |
20110151135 | OPTICAL THIN-FILM DEPOSITION DEVICE AND OPTICAL THIN-FILM FABRICATION METHOD - An optical thin-film vapor deposition apparatus and method are capable of producing an optical thin-film by vapor depositing a vapor deposition substance onto substrates ( | 06-23-2011 |
20110151138 | METHOD FOR DEPOSITING FILM - The method for depositing a film of the present invention comprises the first irradiation step of irradiating particles having energy on a surface of a substrate | 06-23-2011 |
20110151247 | METHOD FOR DEPOSITING FILM AND OIL-REPELLENT SUBSTRATE - The method for depositing a film of the present invention comprises the first film deposition step of depositing a first film | 06-23-2011 |
20110168544 | Manufacturing Method of Optical Filter - [Object]To provide a manufacturing method of an optical filter having favorable film quality by removing a foreign substance adhered onto a surface of a substrate by cleaning before a thin film is formed. | 07-14-2011 |
20110262656 | OPTICAL THIN-FILM VAPOR DEPOSITION APPARATUS AND OPTICAL THIN-FILM PRODUCTION METHOD - A method of vapor depositing a vapor deposition substance onto substrates within a vacuum vessel includes holding the substrates with a dome shaped holder disposed within the vacuum vessel, rotating the dome shaped holder, vapor depositing a substance from a vapor deposition source disposed oppositely to the substrates, supplying ions from an ion source to the substrates, and supplying neutralizing electrons from a neutralizer to the substrates. | 10-27-2011 |
20120105872 | OPTICAL FILM THICKNESS METER AND THIN FILM FORMING APPARATUS PROVIDED WITH OPTICAL FILM THICKNESS METER - An optical film thickness meter capable of measurement of an optical film thickness and spectroscopic characteristics with high accuracy and a thin film forming apparatus provided with the optical film thickness meter are provided. The optical film thickness meter includes a light projector ( | 05-03-2012 |
20130074767 | THIN FILM FORMING APPARATUS - Provided is a thin film forming apparatus for reducing operation time and cost by forming a film only on a specific portion on substrates. A substrate holding mechanism provided in the apparatus includes: substrate holding members holding substrates in a manner that a part of a non-film forming portion of a substrate overlaps the other substrate and a film forming portion is exposed, a support member supporting the substrate holding members, and a rotation member which rotates the support member. The substrate holding members include: holding surfaces holding the substrates and disposed between a film forming source and the substrates, step portions formed between the holding surfaces in a manner that ends of the substrates respectively contact with the step portions, and opening portions formed on the holding surfaces of the portion corresponding to the film forming portion when the ends of the substrates contact with the step portions. | 03-28-2013 |
20140016139 | OPTICAL FILM THICKNESS MEASURING DEVICE AND THIN FILM FORMING APPARATUS USING THE OPTICAL FILM THICKNESS MEASURING DEVICE - An optical film thickness measuring device, enabling direct measurement of a film thickness of a product in real time accurately without a monitor substrate, includes: a projector, a light receiver, inner beam splitters disposed in a base substrate holder to reflect a measurement beam to a base substrate, an inner optical reflector that totally reflects a measurement beam from the closest inner beam splitter, external beam splitters the measurement beam from the inner beam splitters toward the light receiver, and an outer optical reflector that reflects the measurement beam from the optical reflector toward the light receiver. The measurement beam reflected by the inner beam splitters and the inner optical reflector is passed through the base substrate and then reflected by the external beam splitters and the outer optical reflector to be guided to the light receiver, so that the measurement beam is received by the light receiver. | 01-16-2014 |
20140199493 | FILM FORMATION METHOD AND FILM FORMATION APPARATUS - Provided is a film formation apparatus with which an anti-fouling film having high usability and antiwear performance may be formed efficiently. According to a film formation apparatus ( | 07-17-2014 |
20150284842 | THIN FILM FORMATION APPARATUS, SPUTTERING CATHODE, AND METHOD OF FORMING THIN FILM - Provided are a thin film formation apparatus, a sputtering cathode, and a method of forming thin film, capable of forming a multilayer optical film at a high film deposition rate on a large-sized substrate. The thin film formation apparatus forms a thin film of a metal compound on a substrate in a vacuum chamber by sputtering. The vacuum chamber is provided in its inside with targets composed of metal or a conductive metal compound, and an active species source for generating an active species of a reactive gas. The active species source is provided with gas sources for supplying the reactive gas, and an energy source for supplying energy into the vacuum chamber to excite the reactive gas to a plasma state. The energy source is provided between itself and the vacuum chamber with a dielectric window for supplying the energy into the vacuum chamber. | 10-08-2015 |
Patent application number | Description | Published |
20110303973 | SEMICONDUCTOR DEVICE AND PRODUCTION METHOD - The semiconductor device according to the present invention is an nMOS SGT and is composed of a first n+ type silicon layer, a first gate electrode containing metal and a second n+ type silicon layer arranged on the surface of a first columnar silicon layer positioned vertically on a first planar silicon layer. Furthermore, a first insulating film is positioned between the first gate electrode and the first planar silicon layer, and a second insulating film is positioned on the top surface of the first gate electrode. In addition, the first gate electrode containing metal is surrounded by the first n+ type silicon layer, the second n+ type silicon layer, the first insulating film and the second insulating film. | 12-15-2011 |
20110303985 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR - The semiconductor device includes: a columnar silicon layer on the planar silicon layer; a first n+ type silicon layer formed in a bottom area of the columnar silicon layer; a second n+ type silicon layer formed in an upper region of the columnar silicon layer; a gate insulating film formed in a perimeter of a channel region between the first and second n+ type silicon layers; a gate electrode formed in a perimeter of the gate insulating film, and having a first metal-silicon compound layer; an insulating film formed between the gate electrode and the planar silicon layer, an insulating film sidewall formed in an upper sidewall of the columnar silicon layer; a second metal-silicon compound layer formed in the planar silicon layer; and an electric contact formed on the second n+ type silicon layer. | 12-15-2011 |
20130252413 | SURROUND GATE CMOS SEMICONDUCTOR DEVICE - The semiconductor device includes: a columnar silicon layer on the planar silicon layer; a first n+ type silicon layer formed in a bottom area of the columnar silicon layer; a second n+ type silicon layer formed in an upper region of the columnar silicon layer; a gate insulating film formed in a perimeter of a channel region between the first and second n+ type silicon layers; a gate electrode formed in a perimeter of the gate insulating film, and having a first metal-silicon compound layer; an insulating film formed between the gate electrode and the planar silicon layer, an insulating film sidewall formed in an upper sidewall of the columnar silicon layer; a second metal-silicon compound layer formed in the planar silicon layer; and an electric contact formed on the second n+ type silicon layer. | 09-26-2013 |
20150357428 | SURROUNDING GATE TRANSISTOR (SGT) STRUCTURE - The semiconductor device according to the present invention is an nMOS SGT and is composed of a first n+ type silicon layer, a first gate electrode containing metal and a second n+ type silicon layer arranged on the surface of a first columnar silicon layer positioned vertically on a first planar silicon layer. Furthermore, a first insulating film is positioned between the first gate electrode and the first planar silicon layer, and a second insulating film is positioned on the top surface of the first gate electrode. In addition, the first gate electrode containing metal is surrounded by the first n+ type silicon layer, the second n+ type silicon layer, the first insulating film and the second insulating film. | 12-10-2015 |