Patent application number | Description | Published |
20080224164 | Light Emitting Device with a Nanocrystalline Silicon Embedded Insulator Film - A light emitting device using a silicon (Si) nanocrystalline Si insulating film is presented with an associated fabrication method. The method provides a doped semiconductor or metal bottom electrode. Using a high density plasma-enhanced chemical vapor deposition (HDPECVD) process, a Si insulator film is deposited overlying the semiconductor electrode, having a thickness in a range of 30 to 200 nanometers (nm). For example, the film may be SiOx, where X is less than 2, Si3Nx, where X is less than 4, or SiCx, where X is less than 1. The Si insulating film is annealed, and as a result, Si nanocrystals are formed in the film. Then, a transparent metal electrode is formed overlying the Si insulator film. An annealed Si nanocrystalline SiOx film has a turn-on voltage of less than 20 volts, as defined with respect to a surface emission power of greater than 0.03 watt per square meter. | 09-18-2008 |
20080305566 | Silicon Nanocrystal Embedded Silicon Oxide Electroluminescence Device with a Mid-Bandgap Transition Layer - A method is provided for forming a silicon (Si) nanocrystal embedded Si oxide electroluminescence (EL) device with a mid-bandgap transition layer. The method provides a highly doped Si bottom electrode, and forms a mid-bandgap electrically insulating dielectric film overlying the electrode. A Si nanocrystal embedded SiOx film layer is formed overlying the mid-bandgap electrically insulating dielectric film, where X is less than 2, and a transparent top electrode overlies the Si nanocrystal embedded SiOx film layer. The bandgap of the mid-bandgap dielectric film is about half that of the bandgap of the Si nanocrystal embedded SiOx film. In one aspect, the Si nanocrystal embedded SiOx film has a bandgap (Eg) of about 10 electronvolts (eV) and mid-bandgap electrically insulating dielectric film has a bandgap of about 5 eV. By dividing the high-energy tunneling processes into two lower energy tunneling steps, potential damage due to high power hot electrons is reduced. | 12-11-2008 |
20090033207 | High Quantum Efficiency Silicon Nanoparticle Embedded SiOxNy Luminescence Device - A method is provided for fabricating a high quantum efficiency silicon (Si) nanoparticle embedded SiO | 02-05-2009 |
20090040599 | Optical Waveguide Amplifier Using High Quantum Efficiency Silicon Nanocrystal Embedded Silicon Oxide - A method is provided for optical amplification using a silicon (Si) nanocrystal embedded silicon oxide (SiOx) waveguide. The method provides a Si nanocrystal embedded SiOx waveguide, where x is less than 2, having a quantum efficiency of greater than 10%. An optical input signal is supplied to the Si nanocrystal embedded SiOx waveguide, having a first power at a first wavelength in the range of 700 to 950 nm. The Si nanocrystal embedded SiOx waveguide is pumped with an optical source having a second power at a second wavelength in a range of 250 to 550 nm. As a result, an optical output signal having a third power is generated, greater than the first power, at the first wavelength. In one aspect, the third power increases in response to the length of the waveguide strip. | 02-12-2009 |
20090058266 | Fabrication of a Semiconductor Nanoparticle Embedded Insulating Film Luminescence Device - A method is provided for fabricating a semiconductor nanoparticle embedded Si insulating film for short wavelength luminescence applications. The method provides a bottom electrode, and deposits a semiconductor nanoparticle embedded Si insulating film, including the element of N, O, or C, overlying the bottom electrode. After annealing, a semiconductor nanoparticle embedded Si insulating film has a peak photoluminescence (PL) at a wavelength in the range of 475 to 750 nanometers. | 03-05-2009 |
20090115311 | Fabrication of a Semiconductor Nanoparticle Embedded Insulating Film Electroluminescence Device - A method is provided for fabricating a semiconductor nanoparticle embedded Si insulating film for electroluminescence (EL) applications. The method provides a bottom electrode, and deposits a semiconductor nanoparticle embedded Si insulating film, including an element selected from a group consisting of N and C, overlying the bottom electrode. After annealing, a semiconductor nanoparticle embedded Si insulating film is formed having an extinction coefficient (k) in a range of 0.01-1.0, as measured at about 632 nanometers (nm), and a current density (J) of greater than 1 Ampere per square centimeter (A/cm | 05-07-2009 |
20100278475 | Light Emitting Device and Planar Waveguide with Single-Sided Periodically Stacked Interface - Light emitting and waveguide devices with single-sided photonic bandgaps are provided. The light emitting device is formed from a heavily doped silicon (Si) bottom electrode, and a Si-containing dielectric layer embedded Si nanoparticles overlying the bottom electrode. A transparent indium tin oxide (ITO) top electrode overlies the Si-containing dielectric layer, and a photonic bandgap (PBG) Bragg reflector underlies the Si bottom electrode. The PBG Bragg reflector includes at least one periodic bi-layer of films with different refractive indexes. The single-sided photonic bandgap planar waveguide interface is formed from a planar waveguide and a PBG Bragg reflector underlying the planar waveguide. | 11-04-2010 |
20110032743 | Colloidal-Processed Silicon Particle Device - Colloidal-processed Si particle devices, device fabrication, and device uses have been presented. The generic device includes a substrate, a first electrode overlying the substrate, a second electrode overlying the substrate, laterally adjacent the first electrode, and separated from the first electrode by a spacing. A colloidal-processed Si particle layer overlies the first electrode, the second electrode, and the spacing between the electrodes. The Si particle layer includes a first plurality of nano-sized Si particles and a second plurality of micro-sized Si particles. | 02-10-2011 |
20110074808 | Full Color Gamut Display Using Multicolor Pixel Elements - A display device is provided that includes a plurality of pixels, where each pixel includes a single subpixel. In a first aspect, a single subpixel is able to sequentially generate a plurality of (e.g., at least three) primary colors. As a result of the single subpixel, the display is able to supply a gamut of colors including at least 3 primaries colors. For example, the sequential generation of the 3 primary colors may involve operating the subpixel in a time division multiplex (TDM) mode, and a primary combination color is supplied in response to the subpixel generating 2 primary colors in respective TDM subframes. When the pixel includes at least two neighboring subpixels, the pixel may additionally be operated in a spatial division multiple (SDM) mode or in the TDM mode. | 03-31-2011 |
20110109821 | Plasmonic Device Tuned using Liquid Crystal Molecule Dipole Control - A plasmonic display device is provided with liquid crystal dipole molecule control. The device is made from a first set of electrodes including at least one electrically conductive top electrode and at least one electrically conductive bottom electrode capable of generating a first electric field in a first direction. A second set of electrodes, including an electrically conductive right electrode and an electrically conductive left electrode, is capable of generating a second electric field in a second first direction. A dielectric layer overlies the bottom electrode, made from a liquid crystal material with molecules having dipoles responsive to an electric field. A plasmonic layer, including a plurality of discrete plasmonic particles, is interposed between the first and second set of electrodes and in contact with the dielectric layer. In one aspect, the plasmonic layer is embedded in the dielectric layer. | 05-12-2011 |
20120274231 | Colloidal Silicon Quantum Dot Visible Spectrum Light-Emitting Diode - A method is provided for fabricating a colloidal silicon quantum dot (SiQD) visible spectrum light-emitting diode (LED). The method begins with a transparent first electrode, and a hole-injection layer is formed overlying the first electrode. A hole-transport layer is formed overlying the hole-injection layer, and a SiQD layer overlies the hole-transport layer, where each SiQD has a diameter of less than about 6 nanometers (nm). An electron-transport layer is formed overlying the SiQD layer, and a second electrode is formed overlying the electron-transport layer. | 11-01-2012 |
20130314943 | Waveguide with Controlled Light Collimation - A method is provided for controlling the collimation of light from a backlight top surface. A backlight device includes a first waveguide and a transparent top film overlying the first waveguide top surface. A plurality of bubble structures is formed in the top film bottom surface, having a refractive index less than a first waveguide medium. A plurality of lenses overlies the top film top surface, where each lens is aligned overlying a corresponding gap (W) between bubble structures. The method forms a maximum angle (α) of light propagation through the first waveguide medium. In response to the values W and H (bubble structure height), light, having the maximum angle (α) of light propagation, is reflected off the bubble structure sides, through total internal reflection, into the top film. The method collimates in a vertical direction, orthogonal to the horizontal direction, light exiting the top film through the lenses. | 11-28-2013 |
20130315534 | ULTRA-THIN WAVEGUIDE WITH CONTROLLED LIGHT EXTRACTION - A system and method are provided for using bubble structures to control the extraction of light from a waveguide top surface. The method determines a maximum angle (α) of light propagation through a waveguide medium relative to a first horizontal direction parallel to a waveguide top surface. A plurality of bubble structures is provided having a refractive index less than the waveguide medium. The bubble structures have a base, and sides formed at an acute angle upwards with respect to the base. The bubble structure bases are separated by gap (W), have a height (H), and have a top separated from a waveguide top surface by a space (h). The method varies the gap (W), the height (H), and the space (h). In response, the intensity of light extraction at even the maximum angle (α) of light propagation, can be controlled from the waveguide top surface. | 11-28-2013 |
20130317784 | Method for the Design of Uniform Waveguide Light Extraction - A system and method are provided for designing a waveguide with uniform light extraction. Due to the complex nature of the calculations required, the method may be enabled as a set of software instructions, stored as a sequence of steps in a non-transitory memory for execution by a processor. The method accepts parameters for a waveguide panel, light sources, and light extraction features associated with the waveguide panel. Also accepted as an input are target light extraction goals. The method divides the waveguide panel into n subpanels, where n is an integer greater than 1. For each subpanel, waveguide propagation restrictions are defined. The light extraction features are modeled for each subpanel in response to the target extraction goals, and the waveguide, panel is designed using the light extraction features modeled for each subpanel. | 11-28-2013 |
20140251850 | Systems and Apparatus for Container Conversion - Aspects of the present invention relate to systems, methods and apparatus for container conversion. | 09-11-2014 |