Patent application number | Description | Published |
20100001265 | Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same - The thin film transistor for an organic light emitting diode includes a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern having first source and drain contact holes, a gate electrode on the gate insulating layer, the gate electrode being between the first source and drain contact holes, an interlayer insulating layer covering the gate electrode, having second source and drain contact holes, source and drain electrode in the second source and drain contact holes, insulated from the gate electrode and electrically connected to the crystalline semiconductor pattern by first and second metal patterns in the first source and drain contact holes, respectively, wherein the gate electrode, the first metal pattern in the first source contact hole and the second metal pattern in the first drain contact hole are each made of a same material. | 01-07-2010 |
20100001266 | Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same - A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer on the buffer layer, a gate insulating layer on the semiconductor layer, a gate electrode on the gate insulating layer, an interlayer insulating layer on the entire surface of the substrate having the gate electrode, a first contact hole and a second contact hole, and source and drain electrodes on the interlayer insulating layer, insulated from the gate electrode, and having a portion connected with the semiconductor layer through the first contact hole. An organic light emitting diode display may include the thin film transistor along with a passivation layer on the entire surface of the substrate, and a first electrode, an organic layer, and a second electrode, which are on the passivation layer and electrically connected with the source and drain electrodes. | 01-07-2010 |
20100001287 | Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same - A thin film transistor (TFT), including a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern, the gate insulating layer having two first source/drain contact holes and a semiconductor pattern access hole therein, a gate electrode on the gate insulating layer, the gate electrode being between the two first source/drain contact holes, an interlayer insulating layer covering the gate electrode, the interlayer insulating layer having two second source/drain contact holes therein, and source and drain electrodes on the interlayer insulating layer, each of the source and drain electrodes being insulated from the gate electrode, and having a portion connected to the crystalline semiconductor pattern through the first and second source/drain contact holes. | 01-07-2010 |
20100109013 | Thin film transistor, method of manufacturing the same, and organic light emitting diode display device including the same - A thin film transistor for an organic light emitting diode includes a substrate including a pixel portion and an interconnection portion, a buffer layer on the substrate, a gate electrode and a gate interconnection on the buffer layer, wherein the gate electrode is located at the pixel portion and the gate interconnection is located at the interconnection portion, a gate insulating layer on the substrate, a semiconductor layer on the gate electrode, source and drain electrodes electrically connected to the semiconductor layer, and a metal pattern on the gate interconnection. | 05-06-2010 |
20100163856 | METHOD OF FABRICATING POLYSILICON, THIN FILM TRANSISTOR, METHOD OF FABRICATING THE THIN FILM TRANSISTOR, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR - A thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode (OLED) display device including the thin film transistor, the thin film transistor including: a substrate; a buffer layer formed on the substrate; a first semiconductor layer disposed on the buffer layer; a second semiconductor layer disposed on the first semiconductor layer, which is larger than the first semiconductor layer; a gate electrode insulated from the first semiconductor layer and the second semiconductor layer; a gate insulating layer to insulate the gate electrode from the first semiconductor layer and the second semiconductor layer; source and drain electrodes insulated from the gate electrode and connected to the second semiconductor layer; an insulating layer disposed on the source and drain electrodes, and an organic light emitting diode connected to one of the source and drain electrodes. | 07-01-2010 |
20100224883 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME - A thin film transistor (TFT) and an organic light emitting diode (OLED) display device. The TFT and the OLED display device include a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate electrode insulated from the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, and source and drain electrodes insulated from the gate electrode and partially connected to the semiconductor layer, wherein the semiconductor layer is formed from a polycrystalline silicon layer crystallized by a metal catalyst and the metal catalyst is removed by gettering using an etchant. In addition, the OLED display device includes an insulating layer disposed on the entire surface of the substrate, a first electrode disposed on the insulating layer and electrically connected to one of the source and drain electrodes, an organic layer, and a second electrode. | 09-09-2010 |
20100227060 | ATOMIC LAYER DEPOSITION APPARATUS AND METHOD OF FABRICATING ATOMIC LAYER USING THE SAME - An atomic layer deposition apparatus includes a chamber, a vacuum pump to control a pressure in the chamber, a gas supply unit to supply a reaction gas into the chamber, a substrate holder disposed between the vacuum pump and the gas supply unit and having a heater, a mask assembly disposed between the substrate holder and the gas supply unit and having a cooling path to move coolant, and a coolant source to supply the coolant into the cooling path. The mask assembly is positioned a first distance from a substrate, and coolant is supplied into the cooling path of the mask assembly. The substrate is heated using the heater of the substrate holder, a pressure of the chamber is controlled using the vacuum pump, and reaction gasses are sequentially supplied through the gas supply unit. | 09-09-2010 |
20100227443 | METHOD OF FORMING POLYCRYSTALLINE SILICON LAYER - A method of forming a polycrystalline silicon layer includes forming an amorphous silicon layer on a substrate by chemical vapor deposition using a gas including a silicon atom and hydrogen gas, and crystallizing the amorphous silicon layer into a polycrystalline silicon layer using a crystallization-inducing metal. The resultant polycrystalline silicon layer has an improved charge mobility. | 09-09-2010 |
20100227458 | METHOD OF FORMING POLYCRYSTALLINE SILICON LAYER AND ATOMIC LAYER DEPOSITION APPARATUS USED FOR THE SAME - A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer. | 09-09-2010 |
20110037073 | METHODS OF FABRICATING THIN FILM TRANSISTOR AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING THE SAME - A thin film transistor (TFT), an OLED device having the TFT and a method of fabricating the same and a method of fabricating an organic light emitting diode (OLED) display device that includes the TFT. The method of fabricating a TFT includes providing a substrate, forming a buffer layer on the substrate, forming an amorphous silicon layer pattern on the buffer layer, forming a metal layer on an entire surface of the substrate, forming a semiconductor layer by applying an electrical field to the metal layer to crystallize the amorphous silicon layer pattern, forming source and drain electrodes connected to the semiconductor layer by patterning the metal layer, forming a gate insulating layer on the entire surface of the substrate, forming a gate electrode on the gate insulating layer to correspond to the semiconductor layer and forming a protective layer on the entire surface of the substrate. | 02-17-2011 |
20110037074 | Thin film transistor method of fabricating the same, and organic light emitting diode dislplay device having the same - A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer on the buffer layer, source and drain electrodes directly on the semiconductor layer, each of the source and drain electrodes including at least one hole therethrough, a gate insulating layer on the substrate, and a gate electrode on the gate insulating layer and corresponding to the semiconductor layer. | 02-17-2011 |
20110139611 | Apparatus for Fabricating Thin Film Transistor - In an apparatus for fabricating a thin film transistor, amorphous silicon is deposited on a substrate in a first multi-chamber and is crystallized into polycrystalline silicon without using a separate process chamber or multi-chamber, and the substrate deposited with the amorphous silicon is loaded into a second multi-chamber for forming electrodes, thereby making it possible to minimize a characteristic deviation and improve fabrication process efficiency. The apparatus includes a first multi-chamber in which amorphous silicon is deposited on a substrate, a second multi-chamber in which electrodes are formed on the substrate, and a loading/unloading chamber interposed between the first multi-chamber and the second multi-chamber. The loading/unloading chamber includes a substrate holder on a lower side thereof and a power voltage supplier on an upper side thereof. | 06-16-2011 |
20110139767 | AMRPHOUS SILICON CRYSTALLIZATION APPARATUS - Provided is an amorphous silicon (a-Si) crystallization apparatus for crystallizing a-Si into polysilicon (poly-Si), and more particularly, to an a-Si crystallization apparatus for crystallizing a-Si into poly-Si by applying a certain power voltage to a conductive thin film disposed on a substrate including an a-Si layer to generate joule heat, wherein the a-Si formed on the substrate can be crystallized using the same equipment regardless of the size of the substrate. The a-Si crystallization apparatus includes a process chamber, a substrate holder disposed at a lower part of the process chamber, a power voltage application part disposed at an upper part of the process chamber and including a first electrode and a second electrode having a polarity different from the first electrode, and a controller for adjusting a distance between the first and second electrode. | 06-16-2011 |
20110263107 | METHOD OF FORMING POLYCRYSTALLINE SILICON LAYER AND ATOMIC LAYER DEPOSITION APPARATUS USED FOR THE SAME - A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer. | 10-27-2011 |
20110294267 | METHOD OF FABRICATING THIN FILM TRANSISTOR - A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer on the buffer layer, a gate insulating layer on the semiconductor layer, a gate electrode on the gate insulating layer, an interlayer insulating layer on the entire surface of the substrate having the gate electrode, a first contact hole and a second contact hole, and source and drain electrodes on the interlayer insulating layer, insulated from the gate electrode, and having a portion connected with the semiconductor layer through the first contact hole. An organic light emitting diode display may include the thin film transistor along with a passivation layer on the entire surface of the substrate, and a first electrode, an organic layer, and a second electrode, which are on the passivation layer and electrically connected with the source and drain electrodes. | 12-01-2011 |
20110300675 | Method of fabricating thin film transistor - The thin film transistor for an organic light emitting diode includes a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern having first source and drain contact holes, a gate electrode on the gate insulating layer, the gate electrode being between the first source and drain contact holes, an interlayer insulating layer covering the gate electrode, having second source and drain contact holes, source and drain electrode in the second source and drain contact holes, insulated from the gate electrode and electrically connected to the crystalline semiconductor pattern by first and second metal patterns in the first source and drain contact holes, respectively, wherein the gate electrode, the first metal pattern in the first source contact hole and the second metal pattern in the first drain contact hole are each made of a same material. | 12-08-2011 |
20120097966 | Thin Film Transistor, Organic Light Emitting Diode (OLED) Display Including the Same, and Manufacturing Methods of Them - The present invention relates generally to a thin film transistor, an organic light emitting diode (OLED) display including the same, and manufacturing methods of them. The thin film transistor comprises: a substrate; a gate electrode disposed on the substrate; a gate insulating layer disposed on the gate electrode; a semiconductor layer disposed on the gate insulating layer; an inter layer dielectric disposed on the entire surface of the substrate; and source and drain electrodes disposed on the inter layer dielectric and connected to the semiconductor layer, and in which the gate electrode is disposed so as to correspond to the entire surface of the semiconductor layer, and a manufacturing method thereof. The organic light emitting diode (OLED) display comprises the elements of the thin film transistor described above, and also includes an insulating film disposed on the entire surface of the substrate, and a first electrode, an organic layer, and a second electrode disposed on the insulating film, the first electrode being electrically connected to any one of the source and drain electrodes, and the gate electrode is disposed so as to correspond to the entire surface of the semiconductor layer. | 04-26-2012 |
20120171823 | METHOD OF FABRICATING THIN FILM TRANSISTOR - A thin film transistor (TFT), including a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern, the gate insulating layer having two first source/drain contact holes and a semiconductor pattern access hole therein, a gate electrode on the gate insulating layer, the gate electrode being between the two first source/drain contact holes, an interlayer insulating layer covering the gate electrode, the interlayer insulating layer having two second source/drain contact holes therein, and source and drain electrodes on the interlayer insulating layer, each of the source and drain electrodes being insulated from the gate electrode, and having a portion connected to the crystalline semiconductor pattern through the first and second source/drain contact holes. | 07-05-2012 |
20120184074 | METHOD OF MANUFACTURING THIN FILM TRANSISTOR - A thin film transistor for an organic light emitting diode includes a substrate including a pixel portion and an interconnection portion, a buffer layer on the substrate, a gate electrode and a gate interconnection on the buffer layer, wherein the gate electrode is located at the pixel portion and the gate interconnection is located at the interconnection portion, a gate insulating layer on the substrate, a semiconductor layer on the gate electrode, source and drain electrodes electrically connected to the semiconductor layer, and a metal pattern on the gate interconnection. | 07-19-2012 |
20140363936 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME - A thin film transistor (TFT) and an organic light emitting diode (OLED) display device. The TFT and the OLED display device include a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate electrode insulated from the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, and source and drain electrodes insulated from the gate electrode and partially connected to the semiconductor layer, wherein the semiconductor layer is formed from a polycrystalline silicon layer crystallized by a metal catalyst and the metal catalyst is removed by gettering using an etchant. In addition, the OLED display device includes an insulating layer disposed on the entire surface of the substrate, a first electrode disposed on the insulating layer and electrically connected to one of the source and drain electrodes, an organic layer, and a second electrode. | 12-11-2014 |