Patent application number | Description | Published |
20140217065 | MULTI-STEP METHOD AND APPARATUS FOR ETCHING COMPOUNDS CONTAINING A METAL - A system and method for etching a material, including a compound having a formulation of XYZ, wherein X and Y are one or more metals and Z is selected from one or more Group 13-16 elements, such as carbon, nitrogen, boron, silicon, sulfur, selenium, and tellurium, are disclosed. The method includes a first etch process to form one or more first volatile compounds and a metal-depleted layer and a second etch process to remove at least a portion of the metal-depleted layer. | 08-07-2014 |
20140220247 | METHOD AND SYSTEM FOR TREATMENT OF DEPOSITION REACTOR - A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation. | 08-07-2014 |
20140251953 | METHOD AND SYSTEMS FOR IN-SITU FORMATION OF INTERMEDIATE REACTIVE SPECIES - A system and method for providing intermediate reactive species from a remote plasma unit to a reaction chamber are disclosed. The system includes a pressure control device to control a pressure at the remote plasma unit as intermediate reactive species from the remote plasma unit are provided to the reaction chamber. | 09-11-2014 |
20140251954 | PULSED REMOTE PLASMA METHOD AND SYSTEM - A system and method for providing pulsed excited species from a remote plasma unit to a reaction chamber are disclosed. The system includes a pressure control device to control a pressure at the remote plasma unit as reactive species from the remote plasma unit are pulsed to the reaction chamber. | 09-11-2014 |
20150132212 | METHOD FOR FORMING CONFORMAL CARBON FILMS, STRUCTURES AND DEVICES INCLUDING A CONFORMAL CARBON FILM, AND SYSTEM OF FORMING SAME - Methods of forming carbon films, structures and devices including the carbon films, and systems for forming the carbon films are disclosed. A method includes depositing a metal carbide film using atomic layer deposition (ALD). Metal from the metal carbide film is removed from the metal carbide film to form a carbon film. Because the films are formed using ALD, the films can be relatively conformal and can have relatively uniform thickness over the surface of a substrate. | 05-14-2015 |
20160024656 | SHOWERHEAD ASSEMBLY AND COMPONENTS THEREOF - Showerhead assemblies, gas distribution plates, and systems including the same are disclosed. Exemplary showerhead assemblies include a gas distribution plate. Exemplary gas distribution plates include apertures designed to direct a flow of gas and to reduce stagnation of gas on surfaces of the plates. | 01-28-2016 |
20160051964 | METHOD AND SYSTEM FOR IN SITU FORMATION OF GAS-PHASE COMPOUNDS - A system and method for providing intermediate reactive species to a reaction chamber are disclosed. The system includes an intermediate reactive species formation chamber fluidly coupled to the reaction chamber to provide intermediate reactive species to the reaction chamber. A pressure control device can be used to control an operating pressure of the intermediate reactive species formation chamber, and a heater can be used to heat the intermediate reactive species formation chamber to a desired temperature. | 02-25-2016 |
20160115590 | METHOD AND SYSTEM FOR TREATMENT OF DEPOSITION REACTOR - A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation. | 04-28-2016 |