Patent application number | Description | Published |
20100230281 | THIN FILM FORMING APPARATUS - Provided are a thin film forming apparatus and a thin film forming method. The thin film forming apparatus comprises a first electrode provided for etching a thin film formed on the substrate, a second electrode provided for forming a plasma in the internal space, a third electrode provided for focusing the plasma, and a control unit controlling a voltage to be applied to the first through third electrodes. | 09-16-2010 |
20110147692 | VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF FORMING THE SAME - Provided are a variable resistance memory device and a method of forming the same. The variable resistance memory device may include a substrate, a plurality of bottom electrodes on the substrate, and a first interlayer insulating layer including a trench formed therein. The trench exposes the bottom electrodes and extends in a first direction. The variable resistance memory device further includes a top electrode provided on the first interlayer insulating layer and extending in a second direction crossing the first direction and a plurality of variable resistance patterns provided in the trench and having sidewalls aligned with a sidewall of the top electrode. | 06-23-2011 |
20110186798 | Phase Changeable Memory Devices and Methods of Forming the Same - Phase changeable memory devices are provided including a mold insulating layer on a substrate, the mold insulating layer defining an opening therein. A phase-change material layer is provided in the opening. The phase-change material includes an upper surface that is below a surface of the mold insulating layer. A first electrode is provided in the opening and on the phase-change material layer. A spacer is provided between a sidewall of the mold insulating layer and the phase-change material layer and the first electrode. The upper surface of the first electrode is coplanar with the surface of the mold insulating layer. Related methods are also provided. | 08-04-2011 |
20130270507 | VARIABLE RESISTANCE MEMORY DEVICES AND METHOD OF FORMING THE SAME - A variable resistance memory device includes a lower electrode on a substrate, a variable resistance pattern on the lower electrode, and an upper electrode on the variable resistance pattern. The upper electrode is in contact with at least a sidewall of the variable resistance pattern. | 10-17-2013 |
20160056376 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a selection element, a lower electrode pattern provided on the selection element to include a horizontal portion and a vertical portion; and a phase-changeable pattern on the lower electrode pattern. The vertical portion may extend from the horizontal portion toward the phase-changeable pattern and have a top surface, whose area is smaller than that of a bottom surface of the phase-changeable pattern. | 02-25-2016 |
Patent application number | Description | Published |
20140262754 | PHYSICAL VAPOR DEPOSITION METHODS AND SYSTEMS TO FORM SEMICONDUCTOR FILMS USING COUNTERBALANCE MAGNETIC FIELD GENERATORS - Embodiments relate generally to semiconductor device fabrication and processes, and more particularly, to systems and methods that implement magnetic field generators configured to generate rotating magnetic fields to facilitate physical vapor deposition (“PVD”). In one embodiment, a system generates a first portion of a magnetic field adjacent a first circumferential portion of a substrate, and can generate a second portion of the magnetic field adjacent to a second circumferential portion of the substrate. The second circumferential portion is disposed at an endpoint of a diameter that passes through an axis of rotation to another endpoint of the diameter at which the first circumferential portion resides. The second peak magnitude can be less than the first peak magnitude. The system rotates the first and second portions of the magnetic fields to decompose a target material to form a plasma adjacent the substrate. The system forms a film upon the substrate | 09-18-2014 |
20140265857 | APPARATUS AND ARRANGEMENTS OF MAGNETIC FIELD GENERATORS TO FACILITATE PHYSICAL VAPOR DEPOSITION TO FORM SEMICONDUCTOR FILMS - Embodiments relate generally to semiconductor device fabrication and processes, and more particularly, to an apparatus and arrangements of magnetic field generators configured to generate rotating magnetic fields to facilitate physical vapor deposition (“PVD”). In one embodiment, a magnetic field generator apparatus can include a rotatable magnetic field and a counterbalance magnetic field generator that rotates about the axis of rotation in opposition to the rotatable magnetic field generator. The rotatable magnetic field generator generates a first magnitude of a magnetic field adjacent to a first circumferential portion of a circular region. The counterbalance magnetic field generator generates a second magnitude of the magnetic field adjacent to a second circumferential portion. The rotatable and counterbalance magnetic field generators can be configured to generate the magnetic field between the first and a second plane along a diameter extending from the first circumferential portion to the second circumferential portion. | 09-18-2014 |
20150311065 | PHYSICAL VAPOR DEPOSITION METHODS AND SYSTEMS TO FORM SEMICONDUCTOR FILMS USING COUNTERBALANCE MAGNETIC FIELD GENERATORS - Embodiments relate generally to semiconductor device fabrication and processes, and more particularly, to systems and methods that implement magnetic field generators configured to generate rotating magnetic fields to facilitate physical vapor deposition (“PVD”). In one embodiment, a system generates a first portion of a magnetic field adjacent a first circumferential portion of a substrate, and can generate a second portion of the magnetic field adjacent to a second circumferential portion of the substrate. The second circumferential portion is disposed at an endpoint of a diameter that passes through an axis of rotation to another endpoint of the diameter at which the first circumferential portion resides. The second peak magnitude can be less than the first peak magnitude. The system rotates the first and second portions of the magnetic fields to decompose a target material to form a plasma adjacent the substrate. The system forms a film upon the substrate. | 10-29-2015 |