Patent application number | Description | Published |
20120107502 | Bisamineazaallylic Ligands And Their Use In Atomic Layer Deposition Methods - Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising bisamineazaallylic ligands are provided. Also provided are bisamineazaallylic ligands useful in the methods of the invention and metal coordination complexes comprising these ligands. | 05-03-2012 |
20120108062 | Nitrogen-Containing Ligands And Their Use In Atomic Layer Deposition Methods - Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands. | 05-03-2012 |
20120202357 | In Situ Vapor Phase Surface Activation Of SiO2 - Methods for preparing a substrate for a subsequent film formation process are described. Methods for preparing a substrate for a subsequent film formation process, without immersion in an aqueous solution, are also described. A process is described that includes disposing a substrate into a process chamber, the substrate having a thermal oxide surface with substantially no reactive surface terminations. The thermal oxide surface is exposed to a partial pressure of water above the saturated vapor pressure at a temperature of the substrate to convert the dense thermal oxide with substantially no reactive surface terminations to a surface with hydroxyl surface terminations. This can occur in the presence of a Lewis base such as ammonia. | 08-09-2012 |
20120231164 | Precursors and Methods for the Atomic Layer Deposition of Manganese - Methods and precursors are provided for deposition of elemental manganese films on surfaces using metal coordination complexes comprising an eta-3-bound monoanionic four-electron donor ligands selected from amidinate, mixed ene-amido and allyl, or eta-2 bound amidinate ligand. The ligands are selected from amidinate, ene-amido, and allyl. | 09-13-2012 |
20120270409 | Methods For Manufacturing High Dielectric Constant Films - Provided are methods for depositing a cerium doped hafnium containing high-k dielectric film on a substrate. The reagents of specific methods include hafnium tetrachloride, an organometallic complex of cerium and water. | 10-25-2012 |
20130059077 | Method of Atomic Layer Deposition Using Metal Precursors - Methods for deposition of metal films consisting essentially of Co, Mn, Ru or a lanthanide on surfaces using metal coordination complexes are provided. The precursors used in the process include a 2-methylimine pyrrolyl ligand and/or N,N′-diisopropylformamidinato ligand. The precursors may also contain cyclopentadienyl, pentamethylcyclopentadienyl or pyrrolyl groups. | 03-07-2013 |
20130071580 | Activated Silicon Precursors For Low Temperature Deposition - Provided are processes for the low temperature deposition of silicon-containing films using activated SiH-containing precursors. The SiH-containing precursors may have reactive functionality such as halogen or cyano moieties. Described are processes in which halogenated or cyanated silanes are used to deposit SiN films. Plasma processing conditions can be used to adjust the carbon, hydrogen and/or nitrogen content of the films. | 03-21-2013 |
20130078454 | Metal-Aluminum Alloy Films From Metal Amidinate Precursors And Aluminum Precursors - Described are methods for deposition of metal-aluminum films using metal amidinate precursors and aluminum precursors. Such metal-aluminum films can include metal aluminum carbide, metal aluminum nitride and metal aluminum carbonitride films. The aluminum precursors may be alkyl aluminum precursors or amine alanes. | 03-28-2013 |
20130078455 | Metal-Aluminum Alloy Films From Metal PCAI Precursors And Aluminum Precursors - Described are methods for deposition of metal-aluminum films using metal PCAI precursors and aluminum precursors. Such metal-aluminum films can include metal aluminum carbide, metal aluminum nitride and metal aluminum carbonitride films. The aluminum precursors may be alkyl aluminum precursors or amine alanes. | 03-28-2013 |
20130115383 | DEPOSITION OF METAL FILMS USING ALANE-BASED PRECURSORS - Provided are methods of depositing pure metal and aluminum alloy metal films. Certain methods comprises contacting a substrate surface with first and second precursors, the first precursor comprising an aluminum precursor selected from dimethylaluminum hydride, alane coordinated to an amine, and a compound having a structure represented by: | 05-09-2013 |
20130157475 | Film Deposition Using Tantalum Precursors - Provided are methods of depositing tantalum-containing films via atomic layer deposition and/or chemical vapor deposition. The method comprises exposing a substrate surface to flows of a first precursor comprising TaCl | 06-20-2013 |
20130236657 | Precursors And Methods For The Selective Deposition Of Cobalt And Manganese On Metal Surfaces - Provided are metal coordination complexes comprising a pyrrole or imidazole-based ligands and cobalt or manganese. Also provided are methods for the selective deposition of cobalt and/or manganese films on metal surfaces using these metal coordination complexes comprising a pyrrole or imidazole-based ligand. | 09-12-2013 |
20130267709 | Bisamineazaallylic Ligands And Their Use In Atomic Layer Deposition Methods - Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising bisamineazaallylic ligands are provided. Also provided are bisamineazaallylic ligands useful in the methods of the invention and metal coordination complexes comprising these ligands. | 10-10-2013 |
20140017408 | Deposition Of N-Metal Films Comprising Aluminum Alloys - Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl | 01-16-2014 |
20140065842 | Methods And Apparatus For Forming Tantalum Silicate Layers On Germanium Or III-V Semiconductor Devices - Described are apparatus and methods for forming tantalum silicate layers on germanium or III-V materials. Such tantalum silicate layers may have Si/(Ta+Si) atomic ratios from about 0.01 to about 0.15. The tantalum silicate layers may be formed by atomic layer deposition of silicon oxide and tantalum oxide, followed by interdiffusion of the silicon oxide and tantalum oxide layers. | 03-06-2014 |
20140102365 | Nitrogen-Containing Ligands And Their Use In Atomic Layer Deposition Methods - Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands. | 04-17-2014 |
20140112824 | Deposition Of Films Comprising Aluminum Alloys With High Aluminum Content - Provided are films comprising aluminum, carbon and a metal, wherein the aluminum is present in an amount greater than about 16% by elemental content and less than about 50% carbon. Also provided are methods of depositing the same. | 04-24-2014 |
20140255606 | Methods For Depositing Films Comprising Cobalt And Cobalt Nitrides - Described are cobalt-containing films, as well as methods for providing the cobalt-containing films. Certain methods pertain to exposing a substrate surface to a precursor and a co-reactant to provide a cobalt-containing film, the first precursor having a structure represented by: | 09-11-2014 |
20140273492 | Methods Of Etching Films Comprising Transition Metals - Provided are methods for etching films comprising transition metals. Certain methods involve activating a substrate surface comprising at least one transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to heat, a plasma, an oxidizing environment, or a halide transfer agent to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent. Certain other methods provide selective etching from a multi-layer substrate comprising two or more of a layer of Co, a layer of Cu and a layer of Ni. | 09-18-2014 |
20140363575 | Methods for the Deposition Of Manganese-Containing Films Using Diazabutadiene-Based Precursors - Methods and precursors are provided for deposition of films comprising manganese on surfaces using metal coordination complexes comprising a diazabutadiene-based ligand. Certain methods comprise exposing a substrate surface to a manganese precursor, and exposing the substrate surface to a tertiary amine. | 12-11-2014 |