| Patent application number | Description | Published |
|---|
| 20120000528 | METHOD OF FABRICATING A SOLAR CELL WITH A TUNNEL DIELECTRIC LAYER - Methods of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described. | 01-05-2012 |
| 20120073650 | METHOD OF FABRICATING AN EMITTER REGION OF A SOLAR CELL - Methods of fabricating emitter regions of solar cells are described. Methods of forming layers on substrates of solar cells, and the resulting solar cells, are also described. | 03-29-2012 |
| 20120138135 | METHOD OF FORMING CONTACTS FOR A BACK-CONTACT SOLAR CELL - Methods of forming contacts for back-contact solar cells are described. In one embodiment, a method includes forming a thin dielectric layer on a substrate, forming a polysilicon layer on the thin dielectric layer, forming and patterning a solid-state p-type dopant source on the polysilicon layer, forming an n-type dopant source layer over exposed regions of the polysilicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped polysilicon regions among a plurality of p-type doped polysilicon regions. | 06-07-2012 |
| 20130078758 | METHOD OF FABRICATING A SOLAR CELL WITH A TUNNEL DIELECTRIC LAYER - Methods of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described. | 03-28-2013 |
| 20130291940 | METHOD OF FORMING CONTACTS FOR A BACK-CONTACT SOLAR CELL - Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions. | 11-07-2013 |
| 20140134788 | METHOD OF FABRICATING A SOLAR CELL WITH A TUNNEL DIELECTRIC LAYER - Method of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described. | 05-15-2014 |
| 20140295607 | METHOD OF FORMING CONTACTS FOR A BACK-CONTACT SOLAR CELL - Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions. | 10-02-2014 |
| 20150263200 | METHOD OF FABRICATING A SOLAR CELL WITH A TUNNEL DIELECTRIC LAYER - Methods of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described. | 09-17-2015 |
