Patent application number | Description | Published |
20090000304 | INTEGRATED SUPPORT AND MIXER FOR TURBO MACHINERY - A support and air mixer includes an inner annular member, an outer annular member shaped and positioned such that an annular air gap is formed between the inner annular member and the outer annular member, and a plurality of air mixing members, each air mixing member having a mixing passageway therethrough and each air mixing member having an inner portion connected to the inner annular member, an outer portion connected to the outer annular member, and first and second opposing side portions interconnecting the inner and outer portions and the inner and outer annular members such that the mixing passageway is in fluid communication with the annular air gap. | 01-01-2009 |
20120003084 | FLOW DISCOURAGING SYSTEMS AND GAS TURBINE ENGINES - A flow discouraging system includes a stator assembly, a rotor assembly, and a plurality of fingers. The stator assembly includes one or more stationary components forming a side wall, the side wall including an annular groove defined by an outer axially-extending surface, an inner axially-extending surface, and a radial surface extending between the outer and inner axially-extending surfaces. The rotor assembly is disposed adjacent to and spaced apart from the stator assembly to form a portion of a cavity and includes an annular rim extending at least partially into the annular groove. The plurality of fingers is disposed in the annular groove and extends from the one or more stationary components the annular rim. | 01-05-2012 |
20130004316 | MULTI-PIECE CENTRIFUGAL IMPELLERS AND METHODS FOR THE MANUFACTURE THEREOF - Embodiments of a multi-piece centrifugal impeller are provided, as are embodiments of a method for manufacturing a multi-piece centrifugal impeller. In one embodiment, the centrifugal impeller includes an inducer piece and an exducer piece. The inducer piece includes, in turn, an inducer hub and a plurality of forward blade segments, which extend radially outward from the inducer hub. The exducer piece includes an exducer hub, which is positioned axially adjacent the inducer hub, and a plurality of aft blade segments, which extending outward from the exducer hub. The plurality of aft blade segments interlock with the plurality of forward blade segments to form a plurality of contiguous blade structures, which extend from a forward portion of the inducer hub to an aft portion of the exducer hub. | 01-03-2013 |
20130098061 | GAS TURBINE ENGINE COOLING SYSTEMS HAVING HUB-BLEED IMPELLERS AND METHODS FOR THE PRODUCTION THEREOF - Embodiments of a gas turbine engine cooling system for deployment within a gas turbine engine are provided, as are embodiment of a method for producing a gas turbine engine cooling system. In one embodiment, the gas turbine engine cooling system includes an impeller having a hub, a plurality of hub bleed air passages, and a central bleed air conduit. The plurality of hub bleed air passages each have an inlet formed in an outer circumferential surface of the hub and an outlet formed in an inner circumferential surface of the hub. The central bleed air conduit is fluidly coupled to the outlets of the plurality of hub bleed air passages and is configured to conduct bleed air discharged by the plurality of hub bleed air passages to a section of the gas turbine engine downstream of the impeller to provide cooling air thereto. | 04-25-2013 |
20130272882 | AXIALLY-SPLIT RADIAL TURBINES AND METHODS FOR THE MANUFACTURE THEREOF - Embodiments of an axially-split radial turbine, as are embodiments of a method for manufacturing an axially-split radial turbine. In one embodiment, the method includes the steps of joining a forward bladed ring to a forward disk to produce a forward turbine rotor, fabricating an aft turbine rotor, and disposing the forward turbine rotor and the aft turbine rotor in an axially-abutting, rotationally-fixed relationship to produce the axially-split radial turbine. | 10-17-2013 |
20130280036 | AXIALLY-SPLIT RADIAL TURBINE - An axially-split radial turbine includes a forward rotor section and an aft rotor section being mechanically and abuttingly coupled to one another along an annular interface that resides within a plane generally orthogonal to a rotational axis of the axially-split radial turbine. The axially-split radial turbine can be provided as part of a gas turbine engine. | 10-24-2013 |
20140241906 | AUXILIARY POWER UNITS (APUs) AND METHODS AND SYSTEMS FOR ACTIVATION AND DEACTIVATION OF A LOAD COMPRESSOR THEREIN - Auxiliary power units and methods and systems for activation and deactivation of a load compressor therein are provided. Auxiliary power unit includes the load compressor having an impeller, APU engine, coupling member, pre-spinning means, and APU controller. APU engine is adapted to be mechanically engaged to load compressor to drive load compressor to provide pneumatic power and to be disengaged when the need for pneumatic power ceases. Coupling member couples load compressor and APU engine and is configured to be controllably moved between an engaged position in which the APU engine is mechanically engaged with the load compressor, and a disengaged position, in which the APU engine is disengaged from the load compressor. APU controller is operably coupled to load compressor, APU engine, coupling member, and pre-spinning means and adapted to receive and be responsive to rotational speed signals for controlling movement of coupling member between engaged and disengaged positions. | 08-28-2014 |
20140348664 | IMPINGEMENT-COOLED TURBINE ROTOR - An integral turbine includes a forward hub section and an aft hub section. The forward hub section and the aft hub section are metallurgically coupled to one another along an annular interface that resides within a plane generally orthogonal to a rotational axis of the axially-split turbine. The turbine further includes an airfoil blade ring metallurgically coupled to a radial outer surface of the coupled forward and aft hub sections and an impingement cavity formed within an interior portion of the coupled forward and aft hub sections. The impingement cavity includes an interior surface that is positioned proximate to the radial outer surface of the coupled forward and aft hub sections. Further, an impingement cooling air flow impinges against the interior surface of the impingement cavity to provide convective and conductive cooling to the radial outer surface of the coupled forward and aft hub sections. | 11-27-2014 |
20150247409 | AXIALLY-SPLIT RADIAL TURBINES - Embodiments of an axially-split radial turbine, as are embodiments of a method for manufacturing an axially-split radial turbine. In one embodiment, the method includes the steps of joining a forward bladed ring to a forward disk to produce a forward turbine rotor, fabricating an aft turbine rotor, and disposing the forward turbine rotor and the aft turbine rotor in an axially-abutting, rotationally-fixed relationship to produce the axially-split radial turbine. | 09-03-2015 |
20150354379 | DUAL ALLOY TURBINE ROTORS AND METHODS FOR MANUFACTURING THE SAME - Dual alloy turbine rotors and methods for manufacturing the same are provided. The dual alloy turbine rotor comprises an assembled blade ring and a hub bonded to the assembled blade ring. The assembled blade ring comprises a first alloy selected from the group consisting of a single crystal alloy, a directionally solidified alloy, or an equi-axed alloy. The hub comprises a second alloy. The method comprises positioning a hub within a blade ring to define an interface between the hub and the blade ring. The interface is a non-contacting interface or a contacting interface. The interface is enclosed by a pair of diaphragms. The interface is vacuum sealed. The blade ring is bonded to the hub after the vacuum sealing step. | 12-10-2015 |
Patent application number | Description | Published |
20080208583 | METHOD AND APPARATUS FOR BUILDING ASSET BASED NATURAL LANGUAGE CALL ROUTING APPLICATION WITH LIMITED RESOURCES - A method of processing limited natural language data to automatically develop an optimal feature set, bypassing the standard Wizard of OZ (WOZ) approach is provided. The method provides for building natural language understanding models or for processing existing data from other domains, such as the Internet, for domain-specific adaptation through the use of an optimal feature set. Consequently, when the optimal feature set is passed on to any engine, the optimal feature set produces robust models that can be used for natural language call routing. | 08-28-2008 |
20080215618 | Natural Language Interaction with Large Databases - A method includes applying at least one tag to at least one data element stored in a database the tag having at least one associated rule, utilizing the at least one associated rule to generate at least one variant of the data element, and storing the at least one variant in the database. | 09-04-2008 |
20080226058 | SYSTEM AND METHOD FOR EXPEDITED RESOLUTION OF INQUIRIES FOR AN AUTOMATED AGENT - An automated agent system and method includes an action classifier which scores a representation of a portion of a user inquiry based on a knowledge bank. A comparing device compares a running score of the representation to a threshold to determine if enough information has been collected to respond early to the inquiry. An action mechanism provides an early response to the user prior to the user completing the inquiry if the threshold has been exceeded. | 09-18-2008 |
20080270135 | METHOD AND SYSTEM FOR USING A STATISTICAL LANGUAGE MODEL AND AN ACTION CLASSIFIER IN PARALLEL WITH GRAMMAR FOR BETTER HANDLING OF OUT-OF-GRAMMAR UTTERANCES - A method (and system) of handling out-of-grammar utterances includes building a statistical language model for a dialog state using, generating sentences and semantic interpretations for the sentences using finite state grammar, building a statistical action classifier, receiving user input, carrying out recognition with the finite state grammar, carrying out recognition with the statistical language model, using the statistical action classifier to find semantic interpretations, comparing an output from the finite state grammar and an output from the statistical language model, deciding which output of the output from the finite state grammar and the output from the statistical language model to keep as a final recognition output, selecting the final recognition output, and outputting the final recognition result, wherein the statistical action classifier, the finite state grammar and the statistical language model are used in conjunction to carry out speech recognition and interpretation. | 10-30-2008 |
20110069822 | AUTOMATIC CREATION OF COMPLEX CONVERSATIONAL NATURAL LANGUAGE CALL ROUTING SYSTEM FOR CALL CENTERS - A call routing system is created by receiving a set of initial target classes and a corresponding set of topic descriptions. Non-overlapping semantic tokens in the set of topic descriptions are identified. A set of clear target classes from the non-overlapping semantic tokens and the initial target classes is identified. Overlapping semantic tokens from the set of topic descriptions are identified. A set of vague classes is identified from the overlapping semantic tokens and the initial target classes. A set of disambiguation dialogues and a set of grammar prompts is generated according to the overlapping and non-overlapping semantic tokens. The call routing system is then created based on the set of clear target classes, the set of vague target classes, and the set of disambiguation dialogues. | 03-24-2011 |
20130339779 | SYSTEMATIC FAILURE REMEDIATION - Aspects of the present invention provide a tool for analyzing and remediating an update-related failure. In an embodiment, a failure state of a computer system that has been arrived at as a result of an update is captured. A semantic diff that includes the difference between the failure state and at least one of an original state or a completion state is then computed. This semantic diff is transformed into a feature vector format. Then the transformed semantic diff is analyzed to determine a remediation for the update. Failure and/or resolution signatures can be constructed using the semantic diff and contextual data, and these signatures can be used in comparison and analysis of failures and resolutions. | 12-19-2013 |
20130339787 | SYSTEMATIC FAILURE REMEDIATION - Aspects of the present invention provide a tool for analyzing and remediating an update-related failure. In an embodiment, a failure state of a computer system that has been arrived at as a result of an update is captured. A semantic diff that includes the difference between the failure state and at least one of an original state or a completion state is then computed. This semantic diff is transformed into a feature vector format. Then the transformed semantic diff is analyzed to determine a remediation for the update. Failure and/or resolution signatures can be constructed using the semantic diff and contextual data, and these signatures can be used in comparison and analysis of failures and resolutions. | 12-19-2013 |
20140095143 | TRANSLITERATION PAIR MATCHING - Feature sequences are extracted, as individual letters separated by spaces, from a digital representation of a proper name in a first language to obtain a first orthographic feature sequence set; and from a digital representation of a proper name in a second language to obtain a second orthographic feature sequence set. The first and second orthographic feature sequence sets (a transliteration pair) are compared to determine a similarity score, based on a similarity model including a plurality of conditional probabilities of known orthographic feature sequences in the first language given known orthographic feature sequences in the second language and a plurality of conditional probabilities of known orthographic feature sequences in the second language given known orthographic feature sequences in the first language. Based on at least one threshold value, it is determined whether the transliteration pair belong to an identical actual proper name. | 04-03-2014 |
20140351176 | ACTIVE LEARNING ON STATISTICAL SERVER NAME EXTRACTION FROM INFORMATION TECHNOLOGY (IT) SERVICE TICKETS - Access is obtained to a plurality of information technology services problem tickets. At least a first subset of the tickets include free text tickets with server names embedded in unstructured text fields. The server names are extracted from the first subset of the tickets via a statistical machine learning technique. Using the extracted server names, those of the first subset of the tickets from which the server names have been extracted are linked to corresponding server entries in a configuration information database to facilitate resolution of problems associated with the first subset of the tickets from which the server names have been extracted; and/or at least one of the extracted server names is identified as missing from a list of known server names. | 11-27-2014 |
Patent application number | Description | Published |
20120135273 | Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) Magnetic Tunnel Junctions - A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation process. A Co | 05-31-2012 |
20120205758 | Magnetic element with improved out-of-plane anisotropy for spintronic applications - A magnetic element is disclosed wherein first and second interfaces of a free layer with a Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to lower switching current or increase thermal stability in a magnetic tunnel junction (MTJ). In a MTJ with a bottom spin valve configuration where the Hk enhancing layer is an oxide, the capping layer contacting the Hk enhancing layer is selected to have a free energy of oxide formation substantially greater than that of the oxide. The free layer may be a single layer or composite comprised of an Fe rich alloy such as Co | 08-16-2012 |
20120280336 | Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications - A magnetic element is disclosed that has a composite free layer with a FM1/moment diluting/FM2 configuration wherein FM1 and FM2 are magnetic layers made of one or more of Co, Fe, Ni, and B and the moment diluting layer is used to reduce the perpendicular demagnetizing field. As a result, lower resistance x area product and higher thermal stability are realized when perpendicular surface anisotropy dominates shape anisotropy to give a magnetization perpendicular to the planes of the FM1, FM2 layers. The moment diluting layer may be a non-magnetic metal like Ta or a CoFe alloy with a doped non-magnetic metal. A perpendicular Hk enhancing layer interfaces with the FM2 layer and may be an oxide to increase the perpendicular anisotropy field in the FM2 layer. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device. | 11-08-2012 |
20120286382 | Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications - A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni) | 11-15-2012 |
20120299134 | Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications - A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X) | 11-29-2012 |
20130221459 | Engineered Magnetic Layer with Improved Perpendicular Anisotropy using Glassing Agents for Spintronic Applications - A magnetic element is disclosed wherein first and second interfaces of a free layer with a perpendicular Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to increase thermal stability in a magnetic tunnel junction (MTJ). The free layer may be a single layer or a composite and is comprised of one or more glassing agents that have a first concentration in a middle portion thereof and a second concentration less than the first concentration in regions near first and second interfaces. As a result, a CoFeB free layer, for example, selectively crystallizes along first and second interfaces but maintains an amorphous character in a middle region containing a glass agent providing the annealing temperature is less than the crystallization temperature of the middle region. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device. | 08-29-2013 |
20130221460 | Engineered Magnetic Layer with Improved Perpendicular Anisotropy using Glassing Agents for Spintronic Applications - A magnetic element in a spintronic device or serving as a propagation medium in a domain wall motion device is disclosed wherein first and second interfaces of a free layer with a perpendicular Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to increase thermal stability in a magnetic tunnel junction. The free layer may be a single layer or a composite and is comprised of a glassing agent that has a first concentration in a middle portion thereof and a second concentration less than the first concentration in regions near first and second interfaces. A CoFeB free layer selectively crystallizes along first and second interfaces but maintains an amorphous character in a middle region containing a glass agent providing the annealing temperature is less than the crystallization temperature of the middle region. | 08-29-2013 |
20130224521 | High Thermal Stability Reference Structure with Out-of-Plane Aniotropy for Magnetic Device Applications - Enhanced Hc and Hk in addition to higher thermal stability to 400° C. are achieved in magnetic devices by adding dusting layers on top and bottom surfaces of a spacer in a synthetic antiferromagnetic (SAF) structure to give a RL1/DL1/spacer/DL2/RL2 reference layer configuration where RL1 and RL2 layers exhibit perpendicular magnetic anisotropy (PMA), the spacer induces antiferromagnetic coupling between RL1 and RL2, and DL1 and DL2 are dusting layers that enhance PMA. RL1 and RL2 layers are selected from laminates such as (Ni/Co)n, L1 | 08-29-2013 |
20130230741 | High Thermal Stability Free Layer with High Out-of-Plane Anisotropy for Magnetic Device Applications - A CoFeB or CoFeNiB magnetic layer wherein the boron content is 25 to 40 atomic % and with a thickness <20 Angstroms is used to achieve high perpendicular magnetic anisotropy and enhanced thermal stability in magnetic devices. A dusting layer made of Co, Ni, Fe or alloy thereof is added to top and bottom surfaces of the CoFeB layer to increase magnetoresistance as well as improve Hc and Hk. Another embodiment includes a non-magnetic metal insertion in the CoFeB free layer. The CoFeB layer with elevated B content may be incorporated as a free layer, dipole layer, or reference layer in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. Thermal stability is increased such that substantial Hk is retained after annealing to at least 400° C. for 1 hour. Ku enhancement is achieved and the retention time of a memory cell for STT-MRAM designs is increased. | 09-05-2013 |
20130240963 | STT-MRAM Reference Layer Having Substantially Reduced Stray Field and Consisting of a Single Magnetic Domain - An STT MTJ cell is formed with a magnetic anisotropy of its free and reference layers that is perpendicular to their planes of formation. The reference layer of the cell is an SAF multilayered structure with a single magnetic domain to enhance the bi-stability of the magnetoresistive states of the cell. The free layer of the cell is etched back laterally from the reference layer, so that the fringing stray field of the reference layer is no more than 15% of the coercivity of the free layer and has minimal effect on the free layer. | 09-19-2013 |
20130264665 | Reduction of Capping Layer Resistance Area Product for Magnetic Device Applications - A ferromagnetic layer is capped with a metallic oxide (or nitride) layer that provides a perpendicular-to-plane magnetic anisotropy to the layer. The surface of the ferromagnetic layer is treated with a plasma to prevent diffusion of oxygen (or nitrogen) into the layer interior. An exemplary metallic oxide layer is formed as a layer of metallic Mg that is plasma treated to reduce its grain size and enhance the diffusivity of oxygen into its interior. Then the plasma treated Mg layer is naturally oxidized and, optionally, is again plasma treated to reduce its thickness and remove the oxygen rich upper surface. | 10-10-2013 |
20130270523 | Free Layer with High Thermal Stability for Magnetic Device Applications by Insertion of a Boron Dusting Layer - A boron or boron containing dusting layer such as CoB or FeB is formed along one or both of top and bottom surfaces of a free layer at interfaces with a tunnel barrier layer and capping layer to improve thermal stability while maintaining other magnetic properties of a MTJ stack. Each dusting layer has a thickness from 0.2 to 20 Angstroms and may be used as deposited, or at temperatures up to 400° C. or higher, or following a subsequent anneal at 400° C. or higher. The free layer may be a single layer of CoFe, Co, CoFeB or CoFeNiB, or may include a non-magnetic insertion layer. The resulting MTJ is suitable for STT-MRAM memory elements or spintronic devices. Perpendicular magnetic anisotropy is maintained in the free layer at temperatures up to 400° C. or higher. Ku enhancement is achieved and the retention time of a memory cell for STT-MRAM designs is increased. | 10-17-2013 |
20130307101 | Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications - A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X) | 11-21-2013 |
20130309784 | Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications - A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X) | 11-21-2013 |
20130334629 | MTJ Element for STT MRAM - An all (111) MTJ stack is disclosed in which there are no transitions between different crystalline orientations when going from layer to layer. This is accomplished by providing strongly (111)-textured layers immediately below the MgO tunnel barrier to induce a (111) orientation therein. | 12-19-2013 |
20140015079 | Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications - A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni) | 01-16-2014 |
20140017820 | Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications - A method for forming a MTJ in a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni) | 01-16-2014 |
20140035074 | Multilayers Having Reduced Perpendicular Demagnetizing Field Using Moment Dilution for Spintronic Applications - A magnetic element is disclosed that has a composite free layer with a FM1/moment diluting/FM2 configuration wherein FM1 and FM2 are magnetic layers made of one or more of Co, Fe, Ni, and B and the moment diluting layer is used to reduce the perpendicular demagnetizing field. As a result, lower resistance x area product and higher thermal stability are realized when perpendicular surface anisotropy dominates shape anisotropy to give a magnetization perpendicular to the planes of the FM1, FM2 layers. The moment diluting layer may be a non-magnetic metal like Ta or a CoFe alloy with a doped non-magnetic metal. A perpendicular Hk enhancing layer interfaces with the FM2 layer and may be an oxide to increase the perpendicular anisotropy field in the FM2 layer. A method for forming the magnetic element is also provided. | 02-06-2014 |
20140070341 | Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure with Perpendicular Magnetic Anisotropy for STT-MRAM - A synthetic antiferromagnetic (SAF) structure for a spintronic device is disclosed and has an AP2/antiferromagnetic (AF) coupling/CoFeB configuration. The SAF structure is thinned to reduce the fringing (Ho) field while maintaining high coercivity. The AP2 reference layer has intrinsic perpendicular magnetic anisotropy (PMA) and induces PMA in a thin CoFeB layer through AF coupling. In one embodiment, AF coupling is improved by inserting a Co dusting layer on top and bottom surfaces of a Ru AF coupling layer. When AP2 is (Co/Ni) | 03-13-2014 |
20140077318 | Storage Element for STT MRAM Applications - An improved PMA STT MTJ storage element, and a method for forming it, are described. By inserting a suitable oxide layer between the storage and cap layers, improved PMA properties are obtained, increasing the potential for a larger Eb/kT thermal factor as well as a larger MR. Another important advantage is better compatibility with high processing temperatures, potentially facilitating integration with CMOS. | 03-20-2014 |
20140103469 | Seed Layer for Multilayer Magnetic Materials - A magnetic element is disclosed wherein a composite seed layer such as TaN/Mg enhances perpendicular magnetic anisotropy (PMA) in an overlying magnetic layer that may be a reference layer, free layer, or dipole layer. The first seed layer is selected from one or more of Ta, Zr, Nb, TaN, ZrN, NbN, and Ru. The second seed layer is selected from one or more of Mg, Sr, Ti, Al, V, Hf, B, and Si. A growth promoting layer made of NiCr or an alloy thereof may be inserted between the seed layer and magnetic layer. The magnetic element has thermal stability to at least 400° C. | 04-17-2014 |
20140119105 | Adaptive Reference Scheme for Magnetic Memory Applications - A structure and method is described for an adaptive reference used in reading magnetic tunneling memory cells. A collection of magnetic tunneling memory cells are used to form a reference circuit and are coupled in parallel between circuit ground and a reference input to a sense amplifier. Each of the magnetic memory cells used to form the reference circuit are programmed to a magnetic parallel state or a magnetic anti-parallel state, wherein each different state produces a different resistance. By varying the number of parallel states in comparison to the anti-parallel states, where each of the two sates produce a different resistance, the value of the reference circuit resistance can be adjusted to adapt to the resistance characteristics of a magnetic memory data cell to produce a more reliable read of the data programmed into the magnetic memory data cell. | 05-01-2014 |
20140145792 | Free Layer with Out-of-Plane Anisotropy for Magnetic Device Applications - Synthetic antiferromagnetic (SAF) and synthetic ferrimagnetic (SyF) free layer structures are disclosed that reduce Ho (for a SAF free layer), increase perpendicular magnetic anisotropy (PMA), and provide higher thermal stability up to at least 400° C. The SAF and SyF structures have a FL1/DL1/spacer/DL2/FL2 configuration wherein FL1 and FL2 are free layers with PMA, the coupling layer induces antiferromagnetic or ferrimagnetic coupling between FL1 and FL2 depending on thickness, and DL1 and DL2 are dusting layers that enhance the coupling between FL1 and FL2. The SAF free layer may be used with a SAF reference layer in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. Furthermore, a dual SAF structure is described that may provide further advantages in terms of Ho, PMA, and thermal stability. | 05-29-2014 |
20140217529 | Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications - A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X) | 08-07-2014 |
20140217530 | Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications - A MTJ for a spintronic device that is a domain wall motion device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X) | 08-07-2014 |
20140217531 | Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications - A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X) | 08-07-2014 |
20140306302 | Fully Compensated Synthetic Antiferromagnet for Spintronics Applications - A synthetic antiferromagnet serving as a reference layer for a magnetic tunnel junction is a laminate with a plurality of “x+1” magnetic sub-layers and “x” non-magnetic spacers arranged in an alternating fashion, with a magnetic sub-layer at the top and bottom of the laminated stack. Each spacer has a top and bottom surfaces that interface with adjoining magnetic sub-layers generating antiferromagnetic coupling between the adjoining sub-layers. Perpendicular magnetic anisotropy is induced in each magnetic sub-layer through an interface with a spacer. Thus the dipole field exerted on a free layer is substantially reduced compared with that produced by a conventional synthetic antiferromagnetic reference layer. Magnetic sub-layers are preferably Co while Ru, Rh, or Ir may serve as non-magnetic spacers. | 10-16-2014 |
20140347918 | MRAM Write Pulses to Dissipate Intermediate State Domains - A write method for a STT-RAM MTJ is disclosed that substantially reduces the bit error rate caused by intermediate domain states generated during write pulses. The method includes a plurality of “n” write periods or pulses and “n−1” domain dissipation periods where a domain dissipation period separates successive write periods. During each pulse, a write current is applied in a first direction across the MTJ and during each domain dissipation period, a second current with a magnitude equal to or less than the read current is applied in an opposite direction across the MTJ. Alternatively, no current is applied during one or more domain dissipation periods. Each domain dissipation period has a duration of 1 to 10 ns that is equal to or greater than the precession period of free layer magnetization in the absence of spin torque transfer current. | 11-27-2014 |
20150041935 | High Thermal Stability Reference Structure with Out-of-Plane Anisotropy for Magnetic Device Applications - Enhanced Hc and Hk in addition to higher thermal stability up to at least 400° C. are achieved in magnetic devices by adding dusting layers on top and bottom surfaces of a spacer in a synthetic antiferromagnetic (SAF) structure to give a RL1/DL1/spacer/DL2/RL2 reference layer configuration where RL1 and RL2 layers exhibit perpendicular magnetic anisotropy (PMA), the spacer induces antiferromagnetic coupling between RL1 and RL2, and DL1 and DL2 are dusting layers that enhance PMA. Dusting layers are deposited at room temperature to 400° C. RL1 and RL2 layers are selected from laminates such as (Ni/Co)n, L1 | 02-12-2015 |
20150056368 | High Thermal Stability Reference Structure with Out-of-Plane Anisotropy for Magnetic Device Applications - Enhanced Hc and Hk in addition to higher thermal stability to 400° C. are achieved in magnetic devices by adding dusting layers on top and bottom surfaces of a spacer in a synthetic antiferromagnetic (SAF) structure to give a RL1/DL1/spacer/DL2/RL2 reference layer configuration where RL1 and RL2 layers exhibit perpendicular magnetic anisotropy (PMA), the spacer induces antiferromagnetic coupling between RL1 and RL2, and DL1 and DL2 are dusting layers that enhance PMA. Dusting layers are deposited at room temperature to 400° C. RL1 and RL2 layers are selected from laminates such as (Ni/Co)n, L1 | 02-26-2015 |
20150061055 | Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications - A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni) | 03-05-2015 |
20150061056 | Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications - A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni) | 03-05-2015 |
20150061057 | Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications - A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni) | 03-05-2015 |
20150061058 | Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications - A MTJ for a domain wall motion device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni) | 03-05-2015 |
20160042779 | Free Layer with Out-of-Plane Anisotropy for Magnetic Device Applications - Synthetic antiferromagnetic (SAF) and synthetic ferrimagnetic (SyF) free layer structures are disclosed that reduce Ho (for a SAF free layer), increase perpendicular magnetic anisotropy (PMA), and provide higher thermal stability up to at least 400° C. The SAF and SyF structures have a FL1/DL1/spacer/DL2/FL2 configuration wherein FL1 and FL2 are free layers with PMA, the coupling layer induces antiferromagnetic or ferrimagnetic coupling between FL1 and FL2 depending on thickness, and DL1 and DL2 are dusting layers that enhance the coupling between FL1 and FL2. The SAF free layer may be used with a SAF reference layer in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. Furthermore, a dual SAF structure is described that may provide further advantages in terms of Ho, PMA, and thermal stability. | 02-11-2016 |