Patent application number | Description | Published |
20090014061 | GaInNAsSb solar cells grown by molecular beam epitaxy - A high efficiency triple-junction solar cell and method of manufacture therefor is provided wherein junctions are formed between different types of III-V semiconductor alloy materials, one alloy of which contains a combination of an effective amount of antimony (Sb) with gallium (Ga), indium (In), nitrogen (N, the nitride component) and arsenic (As) to form the dilute nitride semiconductor layer GaInNAsSb which has particularly favorable characteristics in a solar cell. In particular, the bandgap and lattice matching promote efficient solar energy conversion. | 01-15-2009 |
20090016666 | SILICON-BASED GE/SIGE OPTICAL INTERCONNECTS - SiGe quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the Γ point of the first Brillouin zone) are provided. Quantum well structures that satisfy this condition have “Kane-like” bands at and near k=0 which can provide physical effects useful for various device applications, especially optical modulators. In the Si | 01-15-2009 |
20120006390 | Nano-wire solar cell or detector - Solar cells or photodetectors having one or more single-crystal shell layers conformally deposited on Ge nano-wires are provided. This approach can provide higher efficiency and/or reduced material cost compared to conventional planar approaches for multi-junction solar cells having the same thickness of active solar absorption materials. Shell layers deposited on the Ge nano-wires and including pn junctions can be grown such that they end up with single-crystal faceted tips, which can significantly improve optical collection efficiency and can improve the electron collection efficiency because of the high crystal quality. | 01-12-2012 |
20120286389 | Method of design and growth of single-crystal 3D nanostructured solar cell or detector - Photovoltaic devices conformally deposited on a nano-structured substrate having hills and valleys have corresponding hills and valleys in the device layers. We have found that disposing an insulator in the valleys of the device layers such that the top electrode of the device is insulated from the device layer valleys provides beneficial results. In particular, this insulator prevents electrical shorts that otherwise tend to occur in such devices. | 11-15-2012 |
20130136392 | Vertically coupled wavelength tunable photo-detector/optoelectronic devices and systems - A system concept is provided for optical and/or optoelectronic integration that is based on coupling two or more waveguide detectors that are tunable to the same optical waveguide. This common optical waveguide can be regarded as an optical bus. The detectors each have two waveguide ends that are coupled to the optical bus, and light in the detectors that is not absorbed can propagate from the waveguide detectors to the optical bus. A preferred approach for implementing such coupling of detectors to the optical bus is the use of 3-D waveguide tapers between the detectors and the optical bus. Tuning the detectors in such a configuration can provide numerous useful functions. | 05-30-2013 |
20140041717 | Ultra thin film nanostructured solar cell - Improved solar cells are provided by nano-structuring the solar cell active region to provide high optical absorption in a thin structure, thereby simultaneously providing high optical absorption and high carrier collection efficiency. Double-sided nano-structuring is considered, where both surfaces of the active region are nano-structured. In cases where the active region is disposed on a substrate, nano-voids are present between the substrate and the active region, as opposed to the active region being conformally disposed on the substrate. The presence of such nano-voids advantageously increases both optical and electrical confinement in the active region. | 02-13-2014 |
20140042606 | Low Loss Nano-aperture - Low loss optical apertures are provided. A silicon intermediate layer sandwiched between a metal aperture layer and a dielectric layer has been found to offer a good combination of low optical loss combined with superior mechanical properties. | 02-13-2014 |
20140044144 | Vertical Cavity Surface Emitting Laser Nanoscope for Near-field Applications - A vertical cavity surface emitting laser (VCSEL) nanoscope is provided. The VCSEL nanoscope combines a VCSEL with a nano-scale aperture using a support member to separate the aperture from the VCSEL emission face. The resulting device is a useful near-field probe with a wide variety of applications. | 02-13-2014 |
20140239324 | GERMANIUM ELECTROLUMINESCENCE DEVICE AND FABRICATION METHOD OF THE SAME - This invention provides a germanium electroluminescence device and a fabricating method of the same for using germanium of an indirect bandgap semiconductor without modifying a bandgap as a light-emitting layer which emits a 1550 nm-wavelength light and enabling to use not only as infrared LEDs itself but also as light sources for optical communication systems. | 08-28-2014 |
20150047702 | Method of design and growth of single-crystal 3D nanostructured solar cell or detector - Photovoltaic devices conformally deposited on a nano-structured substrate having hills and valleys have corresponding hills and valleys in the device layers. We have found that disposing an insulator in the valleys of the device layers such that the top electrode of the device is insulated from the device layer valleys provides beneficial results. In particular, this insulator prevents electrical shorts that otherwise tend to occur in such devices. | 02-19-2015 |