Patent application number | Description | Published |
20080197369 | Double flip semiconductor device and method for fabrication - A double flip-chip semiconductor device formed by a double flip fabrication process. Epitaxial layers are grown on a substrate in the normal fashion with the n-type layers grown first and the p-type layers grown subsequently. The chip is flipped a first time and mounted to a sacrificial layer. The original substrate is removed, exposing the n-type layer, and various additional layers and treatments are added to the device. Because the n-type layer is exposed during fabrication, the layer may be processed in various ways including adding a reflective element, texturing the surface or adding microstructures to the layer to improve light extraction. The chip is flipped a second time and mounted to a support element. The sacrificial layer is then removed and additional layers and treatment are added to the device. The finished device features a configuration in which the layers maintain the same orientation with respect to the support element that they had with the original substrate on which they were grown. Processing the n-type layers, rather than the p-type layers as in a single flip process, provides greater design flexibility when selecting features to add to the device. Thus, previously unavailable processes and reflective elements may be utilized, enhancing the external quantum efficiency of the device. | 08-21-2008 |
20080290353 | MICROSCALE OPTOELECTRONIC DEVICE PACKAGES - An optoelectronic device article comprises a substrate containing at least one electrically conductive microvia, at least one emitter diode and at least one ESD diode, optionally formed in situ, disposed in or on the substrate, and an electrically conductive path between the foregoing elements. A reflector cavity may be defined in the substrate for receiving the emitter diode(s), with retention elements on the substrate used to retain a lens material. High flux density and high emitter diode spatial density may be attained. Thermal sensors, radiation sensors, and integral heat spreaders comprising one or more protruding fins may be integrated into the article. | 11-27-2008 |
20090014736 | Coating method utilizing phosphor containment structure and devices fabricated using same - Methods for fabricating a semiconductor devices, and in particular light emitting diodes (LEDS) comprising providing a plurality of semiconductor devices on a substrate and forming a contact on at least some of the semiconductor devices. A containment structure is formed on at least some of the semiconductor devices having a contact with each containment structure defining a deposition area excluding the contact. A coating material is deposited then within the deposition area, with the coating material not covering the contact. A light emitting diode (LED) chip wafer comprising a plurality of LEDs on a substrate wafer with at least some of the LEDs having a contact. A plurality of containment structures are included, each of which is associated with a respective one of the plurality of LEDs. Each of the containment structures at least partially on its respective one of the LEDs and defining a deposition area on its respective one of the LEDs. The deposition area excludes the contact. A coating is included in each of the deposition areas. | 01-15-2009 |
20090050907 | Solid state lighting component - An LED component comprising an array of LED chips mounted on a planar surface of a submount with the LED chips capable of emitting light in response to an electrical signal. The LED chips comprise respective groups emitting at different colors of light, with each of the groups interconnected in a series circuit. A lens is included over the LED chips. Other embodiments can comprise thermal spreading structures included integral to the submount and arranged to dissipate heat from the LED chips. | 02-26-2009 |
20090050908 | Solid state lighting component - An LED component according to the present invention comprising an array of LED chips mounted on a submount with the LED chips capable of emitting light in response to an electrical signal. The array can comprise LED chips emitting at two colors of light wherein the LED component emits light comprising the combination of the two colors of light. A single lens is included over the array of LED chips. The LED chip array can emit light of greater than 800 lumens with a drive current of less than 150 milli-Amps. The LED chip component can also operate at temperatures less than 3000 degrees K. In one embodiment, the LED array is in a substantially circular pattern on the submount. | 02-26-2009 |
20090095966 | Multiple conversion material light emitting diode package and method of fabricating same - An emitter package comprising a light emitting diode (LED) emitting light at a wavelength within a wavelength range and a plurality of phosphors. Each of the phosphors absorbs at least some light from the LED and re-emits a different wavelength of light. The package emits a combination of light from the LED and the plurality of phosphors, with the phosphors having excitation characteristics such that the emitter package emits light within a standard deviation of a target color for LEDs emitting at the wavelengths with the wavelength range. A method for fabricating emitter packages comprising fabricating a plurality of LEDs, each of which emits at a wavelength within a range of wavelengths. Each of the LEDs are arranged in a respective package with a plurality of conversion materials so that at least some light from each of the LEDs is absorbed and re-emitted by its corresponding conversion materials. The plurality of conversion materials have excitation characteristics that compensate for different LED emission wavelengths within the LED range of wavelengths such that each of the LED packages emits light within a standard deviation from a target color. | 04-16-2009 |
20090121241 | Wire bond free wafer level LED - A wire-bond free semiconductor device with two electrodes both of which are accessible from the bottom side of the device. The device is fabricated with two electrodes that are electrically connected to the oppositely doped epitaxial layers, each of these electrodes having leads with bottom-side access points. This structure allows the device to be biased with an external voltage/current source, obviating the need for wire-bonds or other such connection mechanisms that must be formed at the packaging level. Thus, features that are traditionally added to the device at the packaging level (e.g., phosphor layers or encapsulants) may be included in the wafer level fabrication process. Additionally, the bottom-side electrodes are thick enough to provide primary structural support to the device, eliminating the need to leave the growth substrate as part of the finished device. | 05-14-2009 |
20090233394 | Led with substrate modifications for enhanced light extraction and method of making same - The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. Etched features, such as truncated pyramids, may be formed on the emitting surface, prior to the RIE process, by cutting into the surface using a saw blade or a masked etching technique. Sidewall cuts may also be made in the emitting surface prior to the RIE process. A light absorbing damaged layer of material associated with saw cutting is removed by the RIE process. The surface morphology created by the RIE process may be emulated using different, various combinations of non-RIE processes such as grit sanding and deposition of a roughened layer of material or particles followed by dry etching. | 09-17-2009 |
20090278156 | MOLDED CHIP FABRICATION METHOD AND APPARATUS - A light emitting diode (LED) is disclosed comprising a plurality of semiconductor layers with a first contact on the bottom surface of the semiconductor layers and a second contact on the top surface of the semiconductor layer. A coating is included that comprises a cured binder and a conversion material that at least partially covers the semiconductor layers, wherein the second contact extends through the coating and is exposed on the same plane as the top surface of the coating. An electrical signal applied to the first and second contacts is conducted through the coating to the semiconductor layers causing the LED to emit light. In other embodiments first and second contacts are accessible from one side of the LED. A coating is included that comprises a cured binder and a conversion material. The coating at least partially covers the semiconductor layers, with the first and second contacts extending through the coating and exposed on the same plane as a surface of the coating. An electrical signal applied to the first and second contacts is conducted through the coating to the semiconductor layers causing the LED to emit light. | 11-12-2009 |
20090283787 | SEMICONDUCTOR LIGHT EMITTING DIODES HAVING REFLECTIVE STRUCTURES AND METHODS OF FABRICATING SAME - Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode contact and/or the cathode contact may further provide a hybrid reflective structure on the first face that is configured to reflect substantially all light that emerges from the first face back into the first face. Related fabrication methods are also described. | 11-19-2009 |
20100140635 | Composite high reflectivity layer - A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises an LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. The composite layer comprises a first layer, and alternating plurality of second and third layers on the first layer, and a reflective layer on the topmost of said plurality of second and third layers. The second and third layers have a different index of refraction, and the first layer is at least three times thicker than the thickest of the second and third layers. For composite layers internal to the LED chip, conductive vias can be included through the composite layer to allow an electrical signal to pass through the composite layer to the LED. | 06-10-2010 |
20100140637 | Light Emitting Diode with a Dielectric Mirror having a Lateral Configuration - A light emitting diode is disclosed that includes an active structure, a first ohmic contact on the active structure, and a transparent conductive oxide layer on the active structure opposite the first ohmic contact. The transparent conductive oxide layer has a larger footprint than said active structure. A dielectric mirror is positioned on the transparent conductive oxide layer opposite said active structure and a second contact is positioned on the transparent conductive oxide layer opposite the dielectric mirror and separated from the active structure. | 06-10-2010 |
20100224890 | Light emitting diode chip with electrical insulation element - A light emitting diode chip comprising a light emitting diode and a thermally conductive substrate. The light emitting diode is on the substrate with the substrate providing a thermal path from the light emitting diode through the substrate. A mounting pad is also on a substrate and an electrically insulating layer is integral to the substrate. The insulating layer electrically insulates the mounting pad from the light emitting diode. A method for fabricating a light emitting diode chip comprises providing a thermally conductive substrate, forming an electrical insulating layer integral to the substrate and forming a mounting pad on the substrate. A light emitting diode is fabricated and mounted to the substrate, with the light emitting diode electrically insulated from the mounting pad by the electrically insulating layer. | 09-09-2010 |
20100252840 | HIGH VOLTAGE LOW CURRENT SURFACE EMITTING LED - An LED chip comprising a plurality of sub-LEDs on a submount. Electrically conductive and electrically insulating features are included that serially interconnect the sub-LEDs such that an electrical signal applied to the serially interconnected sub-LEDs along the electrically conductive features spreads to the serially interconnected sub-LEDs. A via is included that is arranged to electrically couple one of the sub-LEDs to the submount. The sub-LED can be interconnected by more than one of the conductive features, with each one of the conductive features capable of spreading an electrical signal between the two of the sub-LEDs. | 10-07-2010 |
20100273280 | LED WITH SUBSTRATE MODIFICATIONS FOR ENHANCED LIGHT EXTRACTION AND METHOD OF MAKING SAME - The surface morphology of an LED light emitting surface is changed by applying processes, such as a reactive ion etch (RIE) process to the light emitting surface. In one embodiment, the changed surface morphology takes the form of a moth-eye surface. The surface morphology created by the RIE process may be emulated using different combinations of non-RIE processes such as grit sanding and deposition of a roughened layer of material or particles followed by dry etching. | 10-28-2010 |
20100323465 | MOLDED CHIP FABRICATION METHOD AND APPARATUS - A method and apparatus for coating a plurality of semiconductor devices that is particularly adapted to coating LEDs with a coating material containing conversion particles. One method according to the invention comprises providing a mold with a formation cavity. A plurality of semiconductor devices are mounted within the mold formation cavity and a curable coating material is injected or otherwise introduced into the mold to fill the mold formation cavity and at least partially cover the semiconductor devices. The coating material is cured so that the semiconductor devices are at least partially embedded in the cured coating material. The cured coating material with the embedded semiconductor devices is removed from the formation cavity. The semiconductor devices are separated so that each is at least partially covered by a layer of the cured coating material. One embodiment of an apparatus according to the invention for coating a plurality of semiconductor devices comprises a mold housing having a formation cavity arranged to hold semiconductor devices. The formation cavity is also arranged so that a curable coating material can be injected into and fills the formation cavity to at least partially covering the semiconductor devices. | 12-23-2010 |
20110012143 | SOLID STATE LIGHTING COMPONENT - An LED component comprising an array of LED chips mounted on a planar surface of a submount with the LED chips capable of emitting light in response to an electrical signal. The LED chips comprise respective groups emitting at different colors of light, with each of the groups interconnected in a series circuit. A lens is included over the LED chips. Other embodiments can comprise thermal spreading structures included integral to the submount and arranged to dissipate heat from the LED chips. | 01-20-2011 |
20110049546 | HIGH REFLECTIVITY MIRRORS AND METHOD FOR MAKING SAME - A composite high reflectivity mirror (CHRM) with at least one relatively smooth interior surface interface. The CHRM includes a composite portion, for example dielectric and metal layers, on a base element. At least one of the internal surfaces is polished to achieve a smooth interface. The polish can be performed on the surface of the base element, on various layers of the composite portion, or both. The resulting smooth interface(s) reflect more of the incident light in an intended direction. The CHRMs may be integrated into light emitting diode (LED) devices to increase optical output efficiency. | 03-03-2011 |
20110089456 | SEMICONDUCTOR LIGHT EMITTING DEVICES WITH APPLIED WAVELENGTH CONVERSION MATERIALS AND METHODS FOR FORMING THE SAME - A semiconductor structure includes an active region configured to emit light upon the application of a voltage thereto, a window layer configured to receive the light emitted by the active region, and a plurality of discrete phosphor-containing regions on the window layer and configured to receive light emitted by the active region and to convert at least a portion of the received light to a different wavelength than a wavelength of light emitted by the active region. Methods of forming a semiconductor structure including an active region configured to emit light and a window layer include forming a plurality of discrete phosphor-containing regions on the window layer. | 04-21-2011 |
20110127568 | LATERAL SEMICONDUCTOR LIGHT EMITTING DIODES HAVING LARGE AREA CONTACTS - Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode and cathode contacts extend on the first face to collectively cover substantially all of the first face. A small gap may be provided between the contacts. | 06-02-2011 |
20110169036 | COMPOSITE HIGH REFLECTIVITY LAYER - A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises an LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. The composite layer comprises a first layer, and alternating plurality of second and third layers on the first layer, and a reflective layer on the topmost of said plurality of second and third layers. The second and third layers have a different index of refraction, and the first layer is at least three times thicker than the thickest of the second and third layers. For composite layers internal to the LED chip, conductive vias can be included through the composite layer to allow an electrical signal to pass through the composite layer to the LED. | 07-14-2011 |
20110169038 | MOLDED CHIP FABRICATION METHOD AND APPARATUS - A method and apparatus for coating a plurality of semiconductor devices that is particularly adapted to coating LEDs with a coating material containing conversion particles. One method according to the invention comprises providing a mold with a formation cavity. A plurality of semiconductor devices are mounted within the mold formation cavity and a curable coating material is injected or otherwise introduced into the mold to fill the mold formation cavity and at least partially cover the semiconductor devices. The coating material is cured so that the semiconductor devices are at least partially embedded in the cured coating material. The cured coating material with the embedded semiconductor devices is removed from the formation cavity. The semiconductor devices are separated so that each is at least partially covered by a layer of the cured coating material. One embodiment of an apparatus according to the invention for coating a plurality of semiconductor devices comprises a mold housing having a formation cavity arranged to hold semiconductor devices. The formation cavity is also arranged so that a curable coating material can be injected into and fills the formation cavity to at least partially covering the semiconductor devices. | 07-14-2011 |
20110187294 | GROUP III NITRIDE BASED LIGHT EMITTING DIODE STRUCTURES WITH MULTIPLE QUANTUM WELL STRUCTURES HAVING VARYING WELL THICKNESSES - A Group III nitride based light emitting diode includes a p-type Group III nitride based semiconductor layer, an n-type Group III nitride based semiconductor layer that forms a P-N junction with the p-type Group III nitride based semiconductor layer, and a Group III nitride based active region on the n-type Group III nitride based semiconductor layer. The active region includes a plurality of sequentially stacked Group III nitride based wells including respective well layers. The plurality of well layers includes a first well layer having a first thickness and a second well layer having a second thickness. The second well layer is between the P-N junction and the first well layer, and the second thickness is greater than the first thickness. | 08-04-2011 |
20110228514 | ENHANCED COLOR RENDERING INDEX EMITTER THROUGH PHOSPHOR SEPARATION - LED packages, and LED lamps and bulbs, are disclosed that are arranged to minimize the CRI and efficiency losses resulting from the overlap of conversion material emission and excitation spectrum. In different devices having conversion materials with this overlap, the present invention arranges the conversion materials to reduce the likelihood that re-emitted light from a first conversion materials will encounter the second conversion material to minimize the risk of re-absorption. In some embodiments this risk is minimized by different arrangements where there is separation between the two phosphors. In some embodiments this separation results less than | 09-22-2011 |
20110266560 | WHITE-EMITTING LED CHIPS AND METHOD FOR MAKING SAME - Methods and devices for light emitting diode (LED) chips are provided. In one embodiment of a method, a pre-formed capping wafer is provided, with the capping wafer comprising a conversion material. A wire-bond free LED wafer is fabricated comprising a plurality of LEDs. The capping wafer is bonded to the LED wafer using an adhesive. The LED chips are later singulated upon completion of all final fabrication steps. The capping wafer provides a robust mechanical support for the LED chips during fabrication, which improves the strength of the chips during fabrication. Additionally, the capping wafer may comprise an integrated conversion material, which simplifies the fabrication process. In one possible embodiment for an LED chip wafer, a submount wafer is provided, along with a plurality of LEDs flip-chip mounted on the submount wafer. Additionally, a capping wafer is bonded to the LEDs using an adhesive, and the capping wafer comprises a conversion material. At least some of the light emitted from the LEDs passes through the capping wafer where at least some of the light is converted by the conversion material. | 11-03-2011 |
20110278608 | High Voltage Low Current Surface Emitting LED - A monolithic LED chip is disclosed comprising a plurality of junctions or sub-LEDs (“sub-LEDs”) mounted on a submount. The sub-LEDs are serially interconnected such that the voltage necessary to drive the sub-LEDs is dependent on the number of serially interconnected sub-LEDs and the junction voltage of the sub-LEDs. Methods for fabricating a monolithic LED chip are also disclosed with one method comprising providing a single junction LED on a submount and separating the single junction LED into a plurality of sub-LEDs. The sub-LEDs are then serially interconnected such that the voltage necessary to drive the sub-LEDs is dependent on the number of the serially interconnected sub-LEDs and the junction voltage of the sub-LEDs. | 11-17-2011 |
20120043563 | High Voltage Low Current Surface Emitting Light Emitting Diode - A light emitting diode chip includes a submount, a reflective layer on the submount, an insulating layer on the reflective layer opposite the submount, and a plurality of sub-LEDs on the insulating layer. Each of the sub-LEDs includes a first face adjacent to the submount and a transparent contact on the first face between the sub-LED and the insulating layer and electrical interconnects between adjacent ones of the sub-LEDs. | 02-23-2012 |
20120068594 | Semiconductor Light Emitting Devices with Densely Packed Phosphor Layer at Light Emitting Surface - An LED includes a chip having a light emitting surface, and a coating of phosphor-containing material on the light emitting surface. Phosphor particles are arranged in a densely packed layer within the coating at the light emitting surface, and such that the light emitting surface is in contacting relationship with the phosphor particles. | 03-22-2012 |
20120080688 | ULTRA-THIN OHMIC CONTACTS FOR P-TYPE NITRIDE LIGHT EMITTING DEVICES - A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 Å. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode. | 04-05-2012 |
20120193660 | HORIZONTAL LIGHT EMITTING DIODES INCLUDING PHOSPHOR PARTICLES - Horizontal light emitting diodes include anode and cathode contacts on the same face and a transparent substrate having an oblique sidewall. A conformal phosphor layer having an average equivalent particle diameter d50 of at least about 10 μm is provided on the oblique sidewall. High aspect ratio substrates may be provided. The LED may be directly attached to a submount. | 08-02-2012 |
20120199843 | HIGH REFLECTIVE BOARD OR SUBSTRATE FOR LEDS - Light emitting devices and methods are disclosed that provide improved light output. The devices have an LED mounted to a substrate, board or submount characterized by improved reflectivity, which reduces the absorption of LED light. This increases the amount of light that can emit from the LED device. The LED devices also exhibit improved emission characteristics by having a reflective coating on the submount that is substantially non-yellowing. One embodiment of a light emitting device according to the present invention comprises a submount having a circuit layer. A reflective coating is included between at least some of the elements of the circuit layer. A light emitting diode mounted to the circuit layer, the reflective coating being reflective to the light emitted by the light emitting diode. In some embodiments, the reflective coating comprises a carrier with scattering particles having a different index of refraction than said carrier material. | 08-09-2012 |
20120241781 | SOLID STATE LIGHTING COMPONENT - An LED component comprising an array of LED chips mounted on a planar surface of a submount with the LED chips capable of emitting light in response to an electrical signal. The LED chips comprise respective groups emitting at different colors of light, with each of the groups interconnected in a series circuit. A lens is included over the LED chips. Other embodiments can comprise thermal spreading structures included integral to the submount and arranged to dissipate heat from the LED chips. | 09-27-2012 |
20120280263 | COMPOSITE HIGH REFLECTIVITY LAYER - A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED or package to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises a LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. One embodiment of a LED package comprises a LED mounted on a substrate with an encapsulant over said LED and a composite high reflectivity layer arranged to reflect emitted light. The composite layer comprises a plurality of layers such that at least one of said plurality of layers has an index of refraction lower than the encapsulant and a reflective layer on a side of said plurality of layers opposite the LED. In some embodiments, conductive vias are included through the composite layer to allow an electrical signal to pass through the layer to the LED. | 11-08-2012 |
20120298955 | GROUP III NITRIDE BASED LIGHT EMITTING DIODE STRUCTURES WITH A QUANTUM WELL AND SUPERLATTICE, GROUP III NITRIDE BASED QUANTUM WELL STRUCTURES AND GROUP III NITRIDE BASED SUPERLATTICE STRUCTURES - A semiconductor device is provided that includes a Group III nitride based superlattice and a Group III nitride based active region comprising at least one quantum well structure on the superlattice. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of In | 11-29-2012 |
20130003346 | COMPACT HIGH EFFICIENCY REMOTE LED MODULE - Solid state modules and fixtures comprising different combinations and arrangements of a light source, one or more wavelength conversion materials, thermally conductive connection adapters allowing dissipation of heat outside of the module, and a remote power supply unit. This arrangement allows for greater thermal efficiency and reliability while employing solid state lighting and providing emission patterns that are equivalent with ENERGY STAR® standards. Some embodiments additionally place compensation circuits, previously included with power supply units, on the optical element itself, remote from the power supply unit. Various embodiments of the invention may be used to address many of the difficulties associated with utilizing efficient solid state light sources such as LEDs in the fabrication of lamps or bulbs suitable for direct replacement of traditional incandescent bulbs or fixtures using bulbs. | 01-03-2013 |
20130020929 | SOLID STATE LIGHTING DEVICE INCLUDING GREEN SHIFTED RED COMPONENT - A green-shifted red solid state lighting device includes at least one green solid state light emitter arranged to stimulate emissions from at least one red lumiphor, arranged in combination with at least one blue solid state light emitter. Such device may be devoid of any yellow lumiphor arranged to be stimulated by a blue solid state light emitter. A green shifted red plus blue (GSR+B) lighting device exhibits reduced Stokes Shift losses as compared to a blue shifted yellow plus red (BSY+R) lighting device, with comparable color rendering performance and similar efficiency, enhanced color stability over a range of operating temperatures, and enhanced color rendering performance at higher correlated color temperatures. Additional solid state emitters and/or lumiphors may be provided. | 01-24-2013 |
20130082291 | Light Emitting Devices with Low Packaging Factor - A light emitting diode that when encapsulated within an overmolded hemispherical lens has a packaging factor less than 1.2. | 04-04-2013 |
20130178127 | SEMICONDUCTOR LIGHT EMITTING DEVICES WITH DENSELY PACKED PHOSPHOR LAYER AT LIGHT EMITTING SURFACE - An LED includes a chip having a light emitting surface, and a coating of phosphor-containing material on the light emitting surface. Phosphor particles are arranged in a densely packed layer within the coating at the light emitting surface, and such that the light emitting surface is in contacting relationship with the phosphor particles. | 07-11-2013 |
20130277690 | LOW PROFILE LIGHTING MODULE - A low profile lighting module. Devices according to this disclosure can produce a uniform light intensity output profile, limiting the perceived appearance of individual point sources, from direct lighting modules comprising several light emitting diodes. Individual lighting device components are disclosed that can contribute to this uniform profile, including: primary optics, secondary optics, and contoured housing elements. These components can interact with and control emitted light, thus adjusting its pattern. These components can alter the direction of emitted light, providing a more uniform light intensity over a wider range of viewing angle. | 10-24-2013 |
20130341590 | Quantum Dot Narrow-Band Downconverters for High Efficiency LEDs - The present disclosure is directed to LED components, methods and systems using such components, having light emitter devices with emissions tuned to meet CRI and LER goal values at a defined CCT. These emitter devices and methods may use a combination of light emitting diodes and quantum dots to tune the emission to meet these criteria. The quantum dots may incorporate additional features to protect the quantum dots from environmental conditions and improve heat dissipation, such as coatings and thermally conductive features. | 12-26-2013 |
20130341634 | LIGHT EMITTING DIODE DIELECTRIC MIRROR - A high efficiency LED chip is disclosed that comprises an active LED structure comprising an active layer between two oppositely doped layers. A first reflective layer can be provided adjacent to one of the oppositely doped layers, with the first layer comprising a material with a different index of refraction than the active LED structure. The difference in IR between the active LED structure and the first reflective layer increases TIR of light at the junction. In some embodiments the first reflective layer can comprise an IR lower than the semiconductor material, increasing the amount of light that can experience TIR. Some embodiments of LED chips according to the present invention can also comprise a second reflective layer or metal layer on and used in conjunction with the first reflective layer such that light passing through the first reflective layer can be reflected by the second reflective layer. | 12-26-2013 |
20130341653 | SOLID STATE LIGHTING COMPONENT - An LED component comprising an array of LED chips mounted on a planar surface of a submount with the LED chips capable of emitting light in response to an electrical signal. The LED chips comprise respective groups emitting at different colors of light, with each of the groups interconnected in a series circuit. A lens is included over the LED chips. Other embodiments can comprise thermal spreading structures included integral to the submount and arranged to dissipate heat from the LED chips. | 12-26-2013 |
20140034987 | COMPOSITE HIGH REFLECTIVITY LAYER - A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises an LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. The composite layer comprises a first layer, and alternating plurality of second and third layers on the first layer, and a reflective layer on the topmost of said plurality of second and third layers. The second and third layers have a different index of refraction, and the first layer is at least three times thicker than the thickest of the second and third layers. For composite layers internal to the LED chip, conductive vias can be included through the composite layer to allow an electrical signal to pass through the composite layer to the LED. | 02-06-2014 |
20140151735 | LATERAL SEMICONDUCTOR LIGHT EMITTING DIODES HAVING LARGE AREA CONTACTS - Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode and cathode contacts extend on the first face to collectively cover substantially all of the first face. A small gap may be provided between the contacts. | 06-05-2014 |
20140151738 | ROUGHENED HIGH REFRACTIVE INDEX LAYER/LED FOR HIGH LIGHT EXTRACTION - A light emitting diode (LED) includes a p-type layer of material, an n-type layer of material and an active layer between the p-type layer and the n-type layer. A roughened layer of transparent material is adjacent one of the p-type layer of material and the n-type layer of material. The roughened layer of transparent material has a refractive index close to or substantially the same as the refractive index of the material adjacent the layer of transparent material, and may be a transparent oxide material or a transparent conducting material. An additional layer of conductive material may be between the roughened layer and the n-type or p-type layer. | 06-05-2014 |
20140161147 | SEMICONDUCTOR LIGHT EMITTING DEVICES WITH DENSELY PACKED PHOSPHOR LAYER AT LIGHT EMITTING SURFACE - An LED includes a chip having a light emitting surface, and a coating of phosphor-containing material on the light emitting surface. The phosphor-containing material comprises at least two quantities of different phosphor particles and are arranged in a densely packed layer within the coating at the light emitting surface. The densely packed layer of phosphor particles does not extend all the way through the coating. | 06-12-2014 |
20140191259 | MOLDED CHIP FABRICATION METHOD AND APPARATUS - A method and apparatus for coating a plurality of semiconductor devices that is particularly adapted to coating LEDs with a coating material containing conversion particles. One method according to the invention comprises providing a mold with a formation cavity. A plurality of semiconductor devices are mounted within the mold formation cavity and a curable coating material is injected or otherwise introduced into the mold to fill the mold formation cavity and at least partially cover the semiconductor devices. The coating material is cured so that the semiconductor devices are at least partially embedded in the cured coating material. The cured coating material with the embedded semiconductor devices is removed from the formation cavity. The semiconductor devices are separated so that each is at least partially covered by a layer of the cured coating material. One embodiment of an apparatus according to the invention for coating a plurality of semiconductor devices comprises a mold housing having a formation cavity arranged to hold semiconductor devices. The formation cavity is also arranged so that a curable coating material can be injected into and fills the formation cavity to at least partially covering the semiconductor devices. | 07-10-2014 |
20140203320 | COMPOSITE HIGH REFLECTIVITY LAYER - A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises an LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. The composite layer comprises a first layer, and alternating plurality of second and third layers on the first layer, and a reflective layer on the topmost of said plurality of second and third layers. The second and third layers have a different index of refraction, and the first layer is at least three times thicker than the thickest of the second and third layers. For composite layers internal to the LED chip, conductive vias can be included through the composite layer to allow an electrical signal to pass through the composite layer to the LED. | 07-24-2014 |
20140211476 | Optical Waveguide and Lamp Including Same - An optical waveguide includes a body of optically transmissive material having a width substantially greater than an overall thickness thereof and including a first side, a second side opposite the first side, a central bore extending between the first and second sides and adapted to receive a light emitting diode, and extraction features on the second side. A light diverter extends into the central bore for diverting light into and generally along the width of the body of material. The extraction features direct light out of the first side and wherein at least one extraction feature has an extraction surface dimension transverse to the thickness that is between about 5% and about 75% the overall thickness of the body of material. | 07-31-2014 |
20140211495 | Optical Waveguide and Luminaire Incorporating Same - An optical waveguide includes a body of optically transmissive material having a width substantially greater than an overall thickness thereof. The body of material has a first side, a second side opposite the first side, and a plurality of interior bores extending between the first and second sides each adapted to receive a light emitting diode. Extraction features are disposed on the second side and the extraction features direct light out of at least the first side and at least one extraction feature forms a taper disposed at an outer portion of the body. | 07-31-2014 |
20140211508 | OPTICAL WAVEGUIDE AND LUMINAIRE INCORPORATING SAME - An optical waveguide includes a body of optically transmissive material having a width substantially greater than an overall thickness thereof. The body of material has a first side, a second side opposite the first side, and a plurality of interior bores extending between the first and second sides each adapted to receive a light emitting diode. Extraction features are disposed on the second side and the extraction features direct light out of at least the first side and at least one extraction feature forms a taper disposed at an outer portion of the body. | 07-31-2014 |
20140217443 | CHIP WITH INTEGRATED PHOSPHOR - This disclosure relates to light emitting devices and methods of manufacture thereof, including side and/or multi-surface light emitting devices. Embodiments according to the present disclosure include the use of a functional layer, which can comprise a stand-off distance with one or more portions of the light emitter to improve the functional layer's stability during further device processing. The functional layer can further comprise winged portions allowing for the coating of the lower side portions of the light emitter to further interact with emitted light and a reflective layer coating on the functional layer to further improve light extraction and light emission uniformity. Methods of manufacture including methods utilizing virtual wafer structures are also disclosed. | 08-07-2014 |
20140367713 | MULTI-LAYER CONVERSION MATERIAL FOR DOWN CONVERSION IN SOLID STATE LIGHTING - Light emitting diodes are disclosed that utilize multiple conversion materials in the conversion process in order to achieve the desired emission color point. Different embodiments of the present invention can comprise different phosphor types in separate layers on, above or around one or a plurality of LED chips to achieve the desired light conversion. The LEDs can then emit a desired combination of light from the LED chips and conversion material. In some embodiments, conversion materials can be applied as layers of different phosphor types in order of longest emission wavelength phosphor first, followed by shorter emission phosphors in sequence as opposed to applying in a homogeneously mixed phosphor converter. The conversion material layers can be applied as a blanket over the LED chips and the area surrounding the chip, such as the surface of a submount holding the LED chips. | 12-18-2014 |