Patent application number | Description | Published |
20080246110 | STRUCTURE FOR SPANNING GAP IN BODY-BIAS VOLTAGE ROUTING STRUCTURE - Structures for spanning gap in body-bias voltage routing structure. In an embodiment, a structure is comprised of at least one metal wire. | 10-09-2008 |
20090309626 | SYSTEMS AND METHODS FOR ADJUSTING THRESHOLD VOLTAGE - Systems and methods for adjusting threshold voltage. A threshold voltage of a transistor of an integrated circuit is measured. A bias voltage, which when applied to a body well of the transistor corrects a difference between the threshold voltage and a desired threshold voltage for the transistor, is determined. The bias voltage is encoded into non-volatile storage on the integrated circuit. The non-volatile storage can be digital and/or analog. | 12-17-2009 |
20090313591 | METHOD FOR GENERATING A DEEP N-WELL PATTERN FOR AN INTEGRATED CIRCUIT DESIGN - A method for the design and layout for a patterned deep N-well. A tile is specified as a fundamental building block for the deep N-well pattern. The tile comprises a first element on a first layer and may comprise a second element on a second layer. A two dimensional region is covered with an array of contiguous tiles, with the elements on each layer connecting with elements of adjacent tiles to form extended shapes. The array may be converted to a collection of sub-arrays through the removal of tiles. The array or collection of sub-arrays may be merged to produce a first layer pattern and second layer pattern. Design rule checks may be applied to verify the pattern. The first layer shapes and second layer shapes may be edited. The first layer shapes and the second layer shapes may then be combined to produce a deep N-well pattern. | 12-17-2009 |
20090322412 | SYSTEMS AND METHODS FOR ADJUSTING THRESHOLD VOLTAGE - Systems and methods for adjusting threshold voltage. A threshold voltage of a transistor of an integrated circuit is measured. A bias voltage, which when applied to a body well of the transistor corrects a difference between the threshold voltage and a desired threshold voltage for the transistor, is determined. The bias voltage is encoded into non-volatile storage on the integrated circuit. The non-volatile storage can be digital and/or analog. | 12-31-2009 |
20100060306 | FREQUENCY SPECIFIC CLOSED LOOP FEEDBACK CONTROL OF INTEGRATED CIRCUITS - Systems and methods for frequency specific closed loop feedback control of integrated circuits. In one embodiment, a plurality of controllable inputs to an integrated circuit is adjusted to achieve a frequency specific predetermined value of a dynamic operating indicator of the integrated circuit at the desired specific operating frequency. The predetermined value is stored in a data structure within a computer usable media. The data structure comprises a plurality of frequency specific predetermined values for a variety of operating frequencies. An operating condition of an integrated circuit is controlled via closed loop feedback based on dynamic operating indicators of the measured behavior of the integrated circuit. | 03-11-2010 |
20100072575 | LAYOUT PATTERNS FOR DEEP WELL REGION TO FACILITATE ROUTING BODY-BIAS VOLTAGE - Layout patterns for the deep well region to facilitate routing the body-bias voltage in a semiconductor device are provided and described. The layout patterns include a diagonal sub-surface mesh structure, an axial sub-surface mesh structure, a diagonal sub-surface strip structure, and an axial sub-surface strip structure. A particular layout pattern is selected for an area of the semiconductor device according to several factors. | 03-25-2010 |
20100097092 | CLOSED LOOP FEEDBACK CONTROL OF INTEGRATED CIRCUITS - Systems and methods for closed loop feedback control of integrated circuits. In one embodiment, a plurality of controllable inputs to an integrated circuit is adjusted to achieve a predetermined value of a dynamic operating indicator of the integrated circuit. An operating condition of an integrated circuit is controlled via closed loop feedback based on dynamic operating indicators of the integrated circuit's behavior. | 04-22-2010 |
20100159662 | RAISED SOURCE/DRAIN WITH SUPER STEEP RETROGRADE CHANNEL - Systems and methods for raised source/drain with super steep retrograde channel. In accordance with a first embodiment of the present invention, in one embodiment, a semiconductor device comprises a substrate comprising a surface and a gate oxide disposed above the surface comprising a gate oxide thickness. The semiconductor device further comprises a super steep retrograde channel region formed at a depth below the surface. The depth is about ten to thirty times the gate oxide thickness. Embodiments in accordance with one embodiment may provide a more desirable body biasing voltage to threshold voltage characteristic than is available under the conventional art. | 06-24-2010 |
20100321098 | SYSTEMS AND METHODS FOR INTEGRATED CIRCUITS COMPRISING MULTIPLE BODY BIASING DOMAINS - Systems and methods for integrated circuits comprising multiple body biasing domains. In accordance with a first embodiment of the present invention, a semiconductor structure comprises a substrate of first type material. A first closed structure comprising walls of second type material extends from a surface of the substrate to a first depth. A planar deep well of said second type material underlying and coupled to the closed structure extends from the first depth to a second depth. The closed structure and the planar deep well of said second type material form an electrically isolated region of the first type material. A second-type semiconductor device is disposed to receive a first body biasing voltage from the electrically isolated region of the first type material. A well of the second-type material within the electrically isolated region of the first type material is formed and a first-type semiconductor device is disposed to receive a second body biasing voltage from the well of second-type material. | 12-23-2010 |
20110086478 | SYSTEMS AND METHODS FOR INTEGRATED CIRCUITS COMPRISING MULTIPLE BODY BIASING DOMAINS - Systems and methods for integrated circuits comprising multiple body biasing domains. In accordance with a first embodiment, a semiconductor structure comprises a substrate of first type material. A first closed structure comprising walls of second type material extends from a surface of the substrate to a first depth. A planar deep well of said second type material underlying and coupled to the closed structure extends from the first depth to a second depth. The closed structure and the planar deep well of said second type material form an electrically isolated region of the first type material. A second-type semiconductor device is disposed to receive a first body biasing voltage from the electrically isolated region of the first type material. A well of the second-type material within the electrically isolated region of the first type material is formed and a first-type semiconductor device is disposed to receive a second body biasing voltage from the well of second-type material. | 04-14-2011 |
20110219245 | ADAPTIVE POWER CONTROL - A method and system of adaptive power control. Characteristics of a specific integrated circuit are used to adaptively control power of the integrated circuit. | 09-08-2011 |
20110221029 | BALANCED ADAPTIVE BODY BIAS CONTROL - Systems and methods of balanced adaptive body bias control. In accordance with a first embodiment of the present invention, a method of balanced adaptive body bias control comprises determining a desirable dynamic condition for circuitry of an integrated circuit. A first dynamic indicator corresponding to the desirable dynamic condition is accessed. Second and third dynamic indicators of the integrated circuit are accessed. A first body biasing voltage is adjusted by an increment so as to change the first dynamic indicator in the direction of the desirable dynamic condition. A second body biasing voltage is adjusted based on a relationship between the second dynamic indicator and the third dynamic indicator. | 09-15-2011 |
20110258590 | SOFTWARE CONTROLLED TRANSISTOR BODY BIAS - Software controlled transistor body bias. A target frequency is accessed. Using software, transistor body-biasing values are determined for the target frequency in order to enhance a characteristic of a circuit. The bodies of the transistors are biased based on the body-biasing values, wherein the characteristic is enhanced. | 10-20-2011 |
20110296208 | DYNAMIC CHIP CONTROL - Methods and systems for operating a semiconductor device (e.g., a microprocessor) are described. The microprocessor is initially operated at a voltage and frequency that would be within operating limits at any device temperature. Using models that relate device temperature, operating limits and power consumption with voltage and frequency, the amount of supply voltage and a new operating frequency can be selected. The models are periodically consulted thereafter to continue adjusting the supply voltage and operating frequency, so that the microprocessor is caused to operate at very close to its capacity, in particular in those instances when, for example, processor-intensive instructions are being executed. | 12-01-2011 |
20110300681 | RAISED SOURCE/DRAIN WITH SUPER STEEP RETROGRADE CHANNEL - Systems and methods for raised source/drain with super steep retrograde channel are described. In accordance with a first embodiment, a semiconductor device comprises a substrate comprising a surface and a gate oxide disposed above the surface comprising a gate oxide thickness. The semiconductor device further comprises a super steep retrograde channel region formed at a depth below the surface. The depth is about ten to thirty times the gate oxide thickness. Embodiments may provide a more desirable body biasing voltage to threshold voltage characteristic than is available under the conventional art. | 12-08-2011 |
20120001651 | FREQUENCY SPECIFIC CLOSED LOOP FEEDBACK CONTROL OF INTEGRATED CIRCUITS - Systems and methods for frequency specific closed loop feedback control of integrated circuits. In one embodiment, a plurality of controllable inputs to an integrated circuit is adjusted to achieve a frequency specific predetermined value of a dynamic operating indicator of the integrated circuit at the desired specific operating frequency. The predetermined value is stored in a data structure within a computer usable media. The data structure comprises a plurality of frequency specific predetermined values for a variety of operating frequencies. | 01-05-2012 |
20120281483 | SYSTEMS AND METHODS FOR ADJUSTING THRESHOLD VOLTAGE - Systems and methods for adjusting threshold voltage. A threshold voltage of a transistor of an integrated circuit is measured. A bias voltage, which when applied to a body well of the transistor corrects a difference between the threshold voltage and a desired threshold voltage for the transistor, is determined. The bias voltage is encoded into non-volatile storage on the integrated circuit. The non-volatile storage can be digital and/or analog. | 11-08-2012 |
20120319721 | CLOSED LOOP FEEDBACK CONTROL OF INTEGRATED CIRCUITS - Systems and methods for closed loop feedback control of integrated circuits. In one embodiment, a plurality of controllable inputs to an integrated circuit is adjusted to achieve a predetermined value of a dynamic operating indicator of the integrated circuit. An operating condition of an integrated circuit is controlled via closed loop feedback based on dynamic operating indicators of the integrated circuit's behavior. | 12-20-2012 |
20140033160 | SOFTWARE CONTROLLED TRANSISTOR BODY BIAS - Software controlled transistor body bias. A target frequency is accessed. Using software, transistor body-biasing values are determined for the target frequency in order to enhance a characteristic of a circuit. The bodies of the transistors are biased based on the body-biasing values, wherein the characteristic is enhanced. | 01-30-2014 |
20140084968 | FREQUENCY SPECIFIC CLOSED LOOP FEEDBACK CONTROL OF INTEGRATED CIRCUITS - Systems and methods for frequency specific closed loop feedback control of integrated circuits. In one embodiment, a plurality of controllable inputs to an integrated circuit is adjusted to achieve a frequency specific predetermined value of a dynamic operating indicator of the integrated circuit at the desired specific operating frequency. The predetermined value is stored in a data structure within a computer usable media. The data structure comprises a plurality of frequency specific predetermined values for a variety of operating frequencies. An operating condition of an integrated circuit is controlled via closed loop feedback based on dynamic operating indicators of the measured behavior of the integrated circuit. | 03-27-2014 |
20140131833 | BODY-BIAS VOLTAGE ROUTING STRUCTURES - Body-bias voltage routing structures. In an embodiment, doped well structures distribute body biasing voltages to a plurality of body biasing wells of an integrated circuit. | 05-15-2014 |