Patent application number | Description | Published |
20100071769 | FLUORENE DERIVATIVES AND ORGANIC ELECTRONIC DEVICE USING THE SAME - Disclosed is a novel fluorene derivative and an organic electronic device using the same. The organic electronic device has excellent efficiency, driving voltage, and a lifespan. | 03-25-2010 |
20100117064 | ORGANIC METAL COMPLEXES DERIVATIVE AND ORGANIC LIGHT EMITTING DEVICES USING THE SAME - The present invention relates to a novel organic metal complex derivative and to an organic light emitting device comprising the same. | 05-13-2010 |
20100187504 | DIAMINE DERIVATIVES AND ORGANIC ELECTRONIC DEVICE USING THE SAME - The present invention relates to a new diamine derivative, and an organic electronic device using the same. The diamine derivative according to the present invention can serve as a hole injecting, hole transporting, electron injecting, electron transporting, or light emitting material in an organic electronic device including an organic light emitting device. Particularly, it can serve as a light emitting dopant as used alone, in particular, a blue light emitting dopant. The organic electronic device according to the present invention exhibits excellent characteristics in terms of efficiency, drive voltage, life time, and stability. | 07-29-2010 |
20100252817 | New Anthracene Derivatives, Preparation Method Thereof and Organic Light Emitting Diode Using the Same - The present invention provides a novel anthracene derivative, a method for preparing the same, and an organic electronic device using the same. The anthracene derivative according to the invention can function alone as a light emitting host, in particular, as a blue host in an organic electronic device. Further, the anthracene derivative according to the invention can also function as a hole injecting or hole transporting material, an electron injecting or electron transporting material, or a light emitting material in an organic electronic device including a light emitting device. Therefore, the organic electronic device according to the present invention shows excellent characteristics in efficiency, drive voltage and stability. | 10-07-2010 |
20110024725 | ANTHRACENE DERIVATIVES AND ORGANIC ELECTRONIC DEVICE USING THE SAME - The present invention relates to a novel anthracene derivative and an organic electronic device using the same. The organic electronic device according to the present invention shows excellent characteristics in efficiency, driving voltage, and life time. | 02-03-2011 |
20110108826 | ANTHRACENE DERIVATIVE AND AN ORGANIC ELECTRONIC DEVICE USING THE SAME - The present invention relates to a novel anthracene derivative and an organic electronic device using the same. The anthracene derivative can act as a hole injecting, hole transporting, electron injecting and transporting, or light emitting material in an organic light emitting device and an organic electronic device. In particular, the anthracene derivative can act as a light emitting host. The organic electronic device according to the present invention has excellent characteristics in views of efficiency, the driving voltage, and the stability. | 05-12-2011 |
20110127495 | NEW COMPOUND AND ORGANIC LIGHT EMITTING DEVICE USING THE SAME - The present invention provides a novel compound that is capable of largely improving life span, efficiency, electrochemical stability and thermal stability of the organic light emitting device, and an organic light emitting device in which said compound is included in an organic compound layer. | 06-02-2011 |
20110127513 | NOVEL NITROGEN-CONTAINING HETEROCYCLIC COMPOUND AND ORGANIC ELECTRONIC DEVICE USING THE SAME - The present invention provides a novel nitrogen-containing heterocyclic derivative and an organic electronic device using the same. The organic electronic device according to the present invention has excellent properties in terms of efficiency, driving voltage, and a life span. | 06-02-2011 |
20110168992 | NOVEL COMPOUND, METHOD FOR PREPARING SAME AND ORGANIC ELECTRONIC DEVICE USING SAME - The present invention relates to a novel compound, a method for manufacturing the same, and an organic electronic device using the same, and the novel compound according to the present invention may act as a hole injection, hole transport, electron injection and transport, or light emitting material in an organic light emitting device and an organic electronic device, and the device according to the present invention shows excellent properties in terms of efficiency, a driving voltage, and stability. | 07-14-2011 |
20110210318 | MATERIAL FOR ORGANIC ELECTRONIC DEVICE, AND ORGANIC ELECTRONIC DEVICE USING SAME - The present invention provides a novel compound that is capable of largely improving a life time, efficiency, electrochemical stability, and thermal stability of an organic electronic device, and an organic electronic device that comprises an organic material layer comprising the compound. | 09-01-2011 |
20110227053 | NOVEL CHRYSENE DERIVATIVES AND ORGANIC ELECTRICAL DEVICE USING THE SAME - The present invention relates to a novel chrysene derivative and an organic electronic device using the same. A chrysene according to the present invention may act as a hole injection, hole transport, electron injection and transport, or light emitting material in an organic light emitting device and an organic electronic device, and in particular, may be used alone as a light emitting host or a dopant. | 09-22-2011 |
20120007069 | NOVEL NITROGEN-CONTAINING HETEROCYCLIC COMPOUND AND ORGANIC ELECTRONIC DEVICE USING THE SAME - The present invention provides a novel nitrogen-containing heterocyclic derivative and an organic electronic device using the same. The organic electronic device according to the present invention has excellent properties in terms of efficiency, driving voltage, and a life span. | 01-12-2012 |
20140183505 | BINAPHTHALENE DERIVATIVES, PREPARATION METHOD THEREOF AND ORGANIC ELECTRONIC DEVICE USING THE SAME - The present invention relates to a new binaphthalene derivative, a preparation method thereof, and an organic electronic device using the same. The binaphthalene derivative according to the present invention can perform functions of hole injection and transportation, electron injection and transportation, or light emission in an organic electronic device including an organic light-emitting device, and the device according to the present invention has excellent characteristics in terms of efficiency, drive voltage and stability, and in particular excellent effects such as a low voltage and a long life time. | 07-03-2014 |
Patent application number | Description | Published |
20110095274 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer. | 04-28-2011 |
20130109119 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME | 05-02-2013 |
20130341614 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer. | 12-26-2013 |
Patent application number | Description | Published |
20110140666 | SECONDARY BATTERY - A secondary battery has charging and discharging functions. The second battery prevents an external connection portion from being separated from a connection terminal due to external shocks. | 06-16-2011 |
20120043819 | POWER STORAGE SYSTEM, METHOD OF CONTROLLING THE SAME, AND COMPUTER READABLE RECORDING MEDIUM STORING A PROGRAM FOR EXECUTING THE METHOD - A power storage system for supplying power to a load by coupling a power generation system, a battery, and a grid, the power storage system includes a battery management system (BMS) for controlling charging and discharging of the battery and a power supply circuit for supplying power to the BMS, wherein the power supply circuit is configured to supply external power to the BMS as an operating power of the BMS in a first state in which the external power is applied, and the power supply circuit is configured to supply power of the battery to the BMS as the operating power of the BMS in a second state in which the external power is not applied. | 02-23-2012 |
20120183813 | BATTERY SYSTEM AND ENERGY STORAGE SYSTEM INCLUDING THE SAME - A battery system including a stably operating battery management unit and an energy storage system including the battery system is disclosed. The battery system includes a battery rack configured to store and provide power, a rack protection circuit configured to selectively connect and disconnect the battery rack to and from the input/output terminal, and a rack battery management system (BMS) configured to communicate with the battery rack and with the rack protection circuit. The rack BMS receives data from the battery rack and generates control signals for the rack protection circuit. In addition, the rack protection circuit includes a current path between the battery rack and the input/output terminal, and the rack BMS is excluded from the current path. | 07-19-2012 |
20120249078 | BATTERY SYSTEM AND ENERGY STORAGE SYSTEM INCLUDING THE SAME - A battery system and an energy storage system including a battery module. The battery system includes at least one battery module that may perform charging and discharging, and a battery management unit that controls the charging and the discharging of the battery module. The battery management unit varies a charge limit value for stopping the charging of the battery module and a discharge limit value for stopping the discharging of the battery module. Accordingly, a lifetime of the battery module is extended. | 10-04-2012 |
20120313656 | ELECTRONIC CIRCUIT MODULE AND METHOD OF MAKING THE SAME - An electronic circuit module and a method of manufacturing the electronic circuit module are disclosed. In one embodiment, the electronic circuit module includes i) a substrate on which a circuit is formed, ii) a plurality of electrical devices electrically connected to the circuit and iii) a first molding unit coated on the substrate to cover at least the electrical devices. The module further includes i) a test terminal unit comprising a plurality of test wires and configured to inspect the circuit, wherein each of the test wires comprises a first end electrically connected to the circuit and a second end exposed from the first molding unit, and wherein the second ends of the test wires form an inspection unit and are adjacent to each other on the substrate and ii) a second molding unit coated on the substrate to cover the second ends of the test wires. | 12-13-2012 |
Patent application number | Description | Published |
20080268653 | METHOD OF FORMING HIGH DIELECTRIC FILM USING ATOMIC LAYER DEPOSITION AND METHOD OF MANUFACTURING CAPACITOR HAVING THE HIGH DIELECTRIC FILM - A method of forming a high dielectric film using atomic layer deposition (ALD), and a method of manufacturing a capacitor having the high dielectric film, include supplying a precursor containing a metal element to a semiconductor substrate and purging a reactor; supplying an oxidizer and purging the reactor; and supplying a reaction source containing nitrogen and purging the reactor. | 10-30-2008 |
20090050210 | Methods for Operating Liquid Chemical Delivery Systems Having Recycling Elements - Liquid chemical delivery systems are provided which include a liquid chemical storage canister, a pressurized gas source that feeds a pressurized gas into the storage canister, a vaporizer that may be used to vaporize the liquid chemical supplied from the storage canister, a delivery line that connects the storage canister to the vaporizer, a liquid mass flow controller that controls the flow rate of the liquid chemical through the delivery line, a reaction chamber that is connected to the vaporizer, and a liquid chemical recycling element that collects at least some of the chemical flowing through the system during periods when the liquid chemical delivery system is isolated from the reaction chamber. | 02-26-2009 |
20100196592 | METHODS OF FABRICATING CAPACITORS INCLUDING LOW-TEMPERATURE CAPPING LAYERS - In a method of fabricating a capacitor, a lower electrode is formed, and a dielectric layer is formed on the lower electrode. An upper electrode is foamed on the dielectric layer opposite the lower electrode. A low-temperature capping layer is formed on the upper electrode at a temperature of less than about 300° C. Related devices and fabrication methods are also discussed. | 08-05-2010 |
20100200950 | Semiconductor device having dielectric layer with improved electrical characteristics and associated methods - A semiconductor device having a dielectric layer with improved electrical characteristics and associated methods, the semiconductor device including a lower metal layer, a dielectric layer, and an upper metal layer sequentially disposed on a semiconductor substrate and an insertion layer disposed between the dielectric layer and at least one of the lower metal layer and the upper metal layer, wherein the dielectric layer includes a metal oxide film and the insertion layer includes a metallic material film. | 08-12-2010 |
20110095397 | Semiconductor Structures Including Dielectric Layers and Capacitors Including Semiconductor Structures - Semiconductor structures including a first conductive layer; a dielectric layer on the first conductive layer; a second conductive layer on the dielectric layer; and a crystallized seed layer in at least one of a first portion between the first conductive layer and the dielectric layer and a second portion between the dielectric layer and the second conductive layer. Related capacitors and methods are also provided herein. | 04-28-2011 |
20110102968 | MULTILAYER STRUCTURE, CAPACITOR INCLUDING THE MULTILAYER STRUCTURE AND METHOD OF FORMING THE SAME - In a multilayer structure and a method of forming the same, a conductive layer including a metal nitride and a dielectric layer positioned on a surface of the conductive layer and having a high dielectric constant. The metal nitride comprises one of niobium, vanadium and compositions thereof. Thus, the EOT and leakage current of the multilayer structure may be sufficiently improved. | 05-05-2011 |
20110136317 | Semiconductor device, method of fabricating the same, and semicondutor module, electronic circuit board, and electronic system including the device - Example embodiments relate to a semiconductor device including an oxide dielectric layer and a non-oxide dielectric layer, a method of fabricating the device, and a semiconductor module, an electronic circuit board, and an electronic system including the device. The semiconductor device may include a lower electrode, an oxide dielectric layer disposed on the lower electrode, a non-oxide dielectric layer disposed on the oxide dielectric layer, and an upper electrode disposed on the non-oxide dielectric layer. | 06-09-2011 |
20110151639 | SEMICONDUCTOR DEVICE, METHOD OF FABRICATING THE SAME, SEMICONDUCTOR MODULE, ELECTRONIC CIRCUIT BOARD, AND ELECTRONIC SYSTEM INCLUDING THE DEVICE - Provided are a semiconductor device, a method of fabricating the same, and a semiconductor module, an electronic circuit board, and an electronic system including the device. The semiconductor device includes a lower electrode, a rutile state lower vanadium dioxide layer on the lower electrode, a rutile state titanium oxide on the lower vanadium dioxide layer, and an upper electrode on the titanium oxide layer. | 06-23-2011 |
20120094022 | METHOD OF FORMING METAL THIN FILM - Provided is a method of forming a metal thin film which can reduce leakage current while improving electric properties by improving step coverage of a device. The method of forming a metal thin film includes supplying a metal precursor including chlorine, purging byproducts produced after the supplying of the metal precursor by injecting a purge gas, supplying a reactant to allow the reactant and the metal precursor to react with each other to form a thin film layer, and purging the byproducts produced after the reaction by injecting a purge gas, wherein before the supplying of the metal precursor, the method further includes supplying a reactant to be adsorbed on a treated product. | 04-19-2012 |
20120178254 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING DIELECTRIC LAYER WITH IMPROVED ELECTRICAL CHARACTERISTICS - A semiconductor device having a dielectric layer with improved electrical characteristics and associated methods, the semiconductor device including a lower metal layer, a dielectric layer, and an upper metal layer sequentially disposed on a semiconductor substrate and an insertion layer disposed between the dielectric layer and at least one of the lower metal layer and the upper metal layer, wherein the dielectric layer includes a metal oxide film and the insertion layer includes a metallic material film. | 07-12-2012 |
20120225548 | METHODS OF FORMING DIELECTRIC LAYERS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME - To form a dielectric layer, an organometallic precursor is adsorbed on a substrate loaded into a process chamber. The organometallic precursor includes a central metal and ligands bound to the central metal. An inactive oxidant is provided onto the substrate. The inactive oxidant is reactive with the organometallic precursor. An active oxidant is also provided onto the substrate. The active oxidant has a higher reactivity than that of the inactive oxidant. | 09-06-2012 |
20130244445 | Method of Fabricating Semiconductor Device - Methods of fabricating a semiconductor device include forming a deposited film on a semiconductor substrate in a process chamber by repeatedly forming unit layers on the semiconductor substrate. The unit layer is formed by forming a preliminary unit layer on the semiconductor substrate by supplying a process material including a precursor material and film-control material into the process chamber, purging the process chamber, forming a unit layer from the preliminary unit layer, and again purging the process chamber. The precursor material includes a central atom and a ligand bonded to the central atom, and the film-control material includes a hydride of the ligand. | 09-19-2013 |
20150031186 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING DIELECTRIC LAYER WITH IMPROVED ELECTRICAL CHARACTERISTICS - A semiconductor device having a dielectric layer with improved electrical characteristics and associated methods, the semiconductor device including a lower metal layer, a dielectric layer, and an upper metal layer sequentially disposed on a semiconductor substrate and an insertion layer disposed between the dielectric layer and at least one of the lower metal layer and the upper metal layer, wherein the dielectric layer includes a metal oxide film and the insertion layer includes a metallic material film. | 01-29-2015 |
20150091133 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - In a semiconductor device and in methods of formation thereof, a semiconductor device comprises a substrate, a lower electrode on the substrate, and a dielectric layer on the lower electrode. An adhesion layer is positioned on the dielectric layer and an upper electrode is positioned on the adhesion layer. The adhesion layer contacts the dielectric layer and the upper electrode, and comprises a conductive material. | 04-02-2015 |