Jae-Jung
Jae Jung Lee, Seoul KR
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20090166709 | Flash Memory Device and Method of Fabricating the Same - A flash memory device and method of fabricating thereof. In accordance with the method of the invention, a tunnel dielectric layer and an amorphous first conductive layer are formed over a semiconductor substrate. An annealing process to change the amorphous first conductive layer to a crystallized first conductive layer is performed. A second conductive layer is formed on the crystallized first conductive layer. A first etch process to pattern the second conductive layer is performed. A second etch process to remove an oxide layer on the crystallized first conductive layer is performed. A third etch process to pattern the amorphous first conductive layer is performed. | 07-02-2009 |
20130334702 | SEMICONDUCTOR MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE SAME AND METHOD OF MANUFACTURING THE SAME - A semiconductor memory device of the present invention includes a first dielectric layer located on an upper surface of a semiconductor substrate including contact area and a non-contact area, an etching stop layer pattern formed to expose the first dielectric layer in the non-contact area and cover the first dielectric layer in the contact area, a contact hole extended to the semiconductor substrate of the contact area through the etching stop layer pattern and the first dielectric layer, a contact plug located in the contact hole, and a conductive line connected to the contact plug. | 12-19-2013 |
Jae Jung Lee, Busan KR
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20140322506 | COMPOSITE CLOTH SHEET FOR DECORATION - The present invention relates to a composite cloth sheet for decoration comprising a thin film layer on the upper surface of a cloth layer, in whiche a first hot melt film layer is formed between the cloth layer and the thin film layer and a second hot melt film layer is formed at the lower surface of the cloth layer so as to allow the first hot melt film layer and the second hot melt film layer to be fused through holes of the cloth layer, thereby preventing shrinkage even at a high temperature of 250° C. or higher, and implementing an appropriate level of flexibility while improving the adhesive force of a material to be adhered and the cloth layer, or the cloth layer and the thin film layer. | 10-30-2014 |
Jae Jung Park, Yongin-Si KR
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20140338135 | DYEING COMPOSITION - The present invention relates to a dyeing composition. More particularly, the present invention provides a dyeing composition comprising an ether-based nonionic surfactant, an ether-based oil and alcohol. Preferably, the ether-based nonionic surfactant, the ether-based oil and the alcohol have the same number of carbon atoms. The dyeing composition according to the present invention comprises the ether-based nonionic surfactant, the ether-based oil and the alcohol, forms a multi-lamellar liquid crystal structure, allows for ease of material application and maintains excellent color formation, and particularly, mitigates pungent smell, eye irritation and the like. | 11-20-2014 |
20140345065 | FOAM-TYPE HAIR DYE COMPOSITION FOR IMPROVING HAIR SOFTNESS WITHOUT DRIPPING - The present invention relates to a hair dye composition, and more particularly, to a foam-type hair dye composition comprising: a first agent including a dye and an alkaline agent and a second agent including an oxidant; and a nonionic viscosity increasing agent of a PEG-aliphatic acid ester or a PPG-aliphatic acid ester in one or both of the first agent and the second agent, thereby largely improving dyeing properties without dripping after the composition is coated on hair. | 11-27-2014 |
Jae-Jung Hwang, Siheung-Si KR
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20110158635 | FOCAL PLANE SHUTTER AND IMAGING APPARATUS INCLUDING THE SAME - An imaging apparatus includes a focal plane shutter that has a simple mechanical structure, is easily manufactured and controlled, and provides a live view function. The focal plane shutter includes: a front curtain assembly including two or more front curtain links and two or more front curtain blades, wherein bosses are formed at one of the front curtain links and the front curtain blades, holes are formed in the remaining one of the front contain links and the front curtain blades, and the bosses are inserted into the holes; and a rear curtain assembly including two or more rear curtain links and two or more rear curtain blades, wherein bosses are formed at one of the rear curtain links and the rear curtain blades, holes are formed in the remaining one of the rear curtain links and the rear curtain blades, and the bosses are inserted into the holes. | 06-30-2011 |
Jae-Jung Kim, Suwon-Si KR
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20120280330 | SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME - Semiconductor devices including first and second fin active regions protruding vertically from a substrate and integrally formed with the substrate, a gate insulation layer formed on the first and second fin active regions, a first gate metal contacting the gate insulation layer on the first fin active region, and a second gate metal contacting the first gate metal on the first fin active region and contacting the gate insulation layer on the second fin active region. | 11-08-2012 |
20140374840 | SEMICONDUCTOR DEVICES USING MOS TRANSISTORS WITH NONUNIFORM GATE ELECTRODE STRUCTURES AND METHODS OF FABRICATING THE SAME - A semiconductor device includes a substrate and first and second gate electrodes on the substrate. The first gate electrode includes a first gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion and away from the substrate defining a first trench having a first width and a first functional film filling the first trench. The second gate electrode includes a second gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion defining a second trench having a second width different from the first width, a second functional film conforming to the second gate insulation film in the second trench and defining a third trench, and a metal region in the third trench. The first width may be less than the second width. | 12-25-2014 |
20150294873 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - Provided is a method of fabricating a semiconductor device, including forming an interlayered insulating layer having an opening, on a substrate; sequentially forming a first conductive pattern, a barrier pattern, and a second conductive pattern on bottom and side surfaces of the opening; and nitrifying an upper portion of the second conductive pattern to form a metal nitride layer that is spaced apart from the first conductive pattern. | 10-15-2015 |
Jae-Jung Lee, Singapore SG
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20140051109 | NOVEL COMPOUNDS WITH PHOTOLUMINESCENCE PROPERTIES AND APPLICATIONS THEREOF - The present invention relates to compounds of a general formula (I) having photoluminescence properties. The present invention also relates to applications, such as protein imaging tools, involving such compounds. | 02-20-2014 |
Jae-Jung Park, Hwaseong-Si KR
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20150350585 | RAMP SIGNAL CALIBRATION APPARATUS AND METHOD AND IMAGE SENSOR INCLUDING THE RAMP SIGNAL CALIBRATION APPARATUS - Provided are a ramp signal calibration apparatus and method and image sensor including the apparatus. The apparatus includes: an analog-to-digital converter (ADC) including a trimmable transistor having a gain value that varies according to stored data , and configured to receive a ramp signal in a state where the gain value is a first gain value, and to output first and second output signals; a subtractor configured to calculate a difference between the first and second output signals; a digital comparator configured to compare the difference with a reference value and to determine whether a slope of the ramp signal has changed; and a counter configured to change the stored data based on whether the slope of the ramp signal has changed, wherein when the counter changes the data, the first gain value of the trimmable transistor is changed to a second gain value according to the changed data. | 12-03-2015 |